JPS60120568A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPS60120568A
JPS60120568A JP58226847A JP22684783A JPS60120568A JP S60120568 A JPS60120568 A JP S60120568A JP 58226847 A JP58226847 A JP 58226847A JP 22684783 A JP22684783 A JP 22684783A JP S60120568 A JPS60120568 A JP S60120568A
Authority
JP
Japan
Prior art keywords
film
silicide
layer
impurity
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58226847A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0564469B2 (enrdf_load_stackoverflow
Inventor
Katsutada Horiuchi
勝忠 堀内
Akira Kikuchi
菊地　彰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58226847A priority Critical patent/JPS60120568A/ja
Publication of JPS60120568A publication Critical patent/JPS60120568A/ja
Publication of JPH0564469B2 publication Critical patent/JPH0564469B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
JP58226847A 1983-12-02 1983-12-02 半導体装置及びその製造方法 Granted JPS60120568A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58226847A JPS60120568A (ja) 1983-12-02 1983-12-02 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58226847A JPS60120568A (ja) 1983-12-02 1983-12-02 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS60120568A true JPS60120568A (ja) 1985-06-28
JPH0564469B2 JPH0564469B2 (enrdf_load_stackoverflow) 1993-09-14

Family

ID=16851493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58226847A Granted JPS60120568A (ja) 1983-12-02 1983-12-02 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS60120568A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0244760A (ja) * 1988-06-20 1990-02-14 American Teleph & Telegr Co <Att> 浅い接合を有するデバイス
US6137134A (en) * 1997-05-28 2000-10-24 Nec Corporation Semiconductor memory device
KR100765618B1 (ko) 2006-07-21 2007-10-09 동부일렉트로닉스 주식회사 반도체 소자의 살리사이드 형성 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0244760A (ja) * 1988-06-20 1990-02-14 American Teleph & Telegr Co <Att> 浅い接合を有するデバイス
US6137134A (en) * 1997-05-28 2000-10-24 Nec Corporation Semiconductor memory device
KR100765618B1 (ko) 2006-07-21 2007-10-09 동부일렉트로닉스 주식회사 반도체 소자의 살리사이드 형성 방법

Also Published As

Publication number Publication date
JPH0564469B2 (enrdf_load_stackoverflow) 1993-09-14

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