JPS60117801A - Mic oscillator - Google Patents

Mic oscillator

Info

Publication number
JPS60117801A
JPS60117801A JP22505783A JP22505783A JPS60117801A JP S60117801 A JPS60117801 A JP S60117801A JP 22505783 A JP22505783 A JP 22505783A JP 22505783 A JP22505783 A JP 22505783A JP S60117801 A JPS60117801 A JP S60117801A
Authority
JP
Japan
Prior art keywords
stem
hole
airtight
dielectric resonator
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22505783A
Other languages
Japanese (ja)
Inventor
Hiroyuki Hachitsuka
弘之 八塚
Masayoshi Aikawa
正義 相川
Hirotsugu Ogawa
博世 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Nippon Telegraph and Telephone Corp filed Critical Fujitsu Ltd
Priority to JP22505783A priority Critical patent/JPS60117801A/en
Publication of JPS60117801A publication Critical patent/JPS60117801A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1864Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator
    • H03B5/187Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device
    • H03B5/1876Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/01Varying the frequency of the oscillations by manual means
    • H03B2201/014Varying the frequency of the oscillations by manual means the means being associated with an element comprising distributed inductances and capacitances
    • H03B2201/017Varying the frequency of the oscillations by manual means the means being associated with an element comprising distributed inductances and capacitances the element being a dielectric resonator

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

PURPOSE:To facilitate easy control of resonance frequency regardless of an airtight sealing structure by storing a dielectric resonator into a hole drilled nearly at the center of a stem along with a slot line connected to a microstrip line provided on the rear side of the stem and at the same time providing a resonance frequency control mechanism at the side surface of the stem. CONSTITUTION:A dielectric resonator 4 is attached within a store hole 111 for dielectric resonator. Then an airtight terminal 8 and a bias terminal 17 are inserted into an airtight terminal hole 112 and a bias terminal hole 114 respectively and sealed airtight. Then a frequency control screw 13 is driven into a frequency control screw hole 113 corresponding to the resonator 4. Under such conditions, a ceramic substrate 2 containing a microstrip 3 and a dielectric substance consisting of a slot line 15 formed on the rear side of the line 3 is adhered airtight to a prescribed position of a stem 11. Then the frequency is controlled to a prescribed level by the screw 13, and the hole 111 of the stem 11 is closed with a cover 16.

Description

【発明の詳細な説明】 fa) 発明の技術分野 本発明は、マイクロ波通信機器の構成に使用されるMI
C発振器に係り、とくに誘電体共振器をステム内に収容
し、共振周波数の調整を容易に行えるようにしたMTC
発振器に関するものである。
Detailed Description of the Invention fa) Technical Field of the Invention The present invention relates to an MI
Related to C oscillators, in particular, MTC that houses a dielectric resonator in the stem and allows easy adjustment of the resonant frequency.
It concerns oscillators.

(bl 技術の背景 MICは通常セラミック基板上に電子回路を構成するマ
イクロストリップラインと、これにトランジスタ等の能
動部品とを組合せて、増幅1発振。
(bl Technology background) MICs typically combine a microstrip line that forms an electronic circuit on a ceramic substrate with active components such as transistors to generate a single amplified oscillation.

変復調等の機能を持たせるが、マイクロ化のためにトラ
ンジスタ等が半導体チップのまま組みこまれる場合、こ
れ等を収容するパッケージは覆板を以て密封されなけれ
ばならず、密封後は外部より手を加えることは不可能な
ので外部より所期の特性が容易に行えるようなMIC発
振器の開発が強く要望されている。
Functions such as modulation and demodulation are provided, but when transistors, etc. are incorporated as semiconductor chips due to miniaturization, the package containing them must be sealed with a cover plate, and after being sealed, it cannot be accessed from the outside. Therefore, there is a strong demand for the development of a MIC oscillator that can easily achieve the desired characteristics externally.

(C) 従来技術と問題点 第1図は従来のMIC発振器を説明するための側断面図
で、金属たとえば黄銅等からなるステJ、■上に、マイ
クロストリップライン3を形成してなる誘導体たとえば
セラミック基板2を接着し、該セラミック基板2上に誘
電体共振器4およびトランジスタ7を配設したるのち、
周波数調整ねし6を具備してなる誘電体共振器筺体5を
付設し、前記マイクロストリップライン3の出力端部に
気密出力端子8を取着したるのち、前記周波数調整ねし
6により共振周波数を入念に調整して覆板9でもって気
密封止を行なっている。ところがこのように気密封止を
行うと、経年変化により周波数に誤差を生ずると再調整
が不可能であるという問題点があった。
(C) Prior Art and Problems Figure 1 is a side sectional view for explaining a conventional MIC oscillator. After bonding the ceramic substrate 2 and arranging the dielectric resonator 4 and the transistor 7 on the ceramic substrate 2,
After attaching a dielectric resonator housing 5 equipped with a frequency adjustment screw 6 and attaching an airtight output terminal 8 to the output end of the microstrip line 3, the resonant frequency is adjusted by the frequency adjustment screw 6. The cover plate 9 is carefully adjusted to achieve airtight sealing. However, when this airtight sealing is performed, there is a problem in that readjustment is impossible if an error occurs in the frequency due to aging.

(d] 発明の目的 本発明は、−ヒ記従来の問題点に鑑み、誘電体共振器を
ステム内に収容し、気密封止に関係なく共振周波数IM
整が容易に行なえるようにしたMIC発振器を提供する
ことを目的とするものである。
(d) Purpose of the Invention In view of the conventional problems described in
It is an object of the present invention to provide a MIC oscillator that can be easily tuned.

(Ql 発明の構成 前述の目的を達成するために本発明は、ステム上にマイ
クロストリップラインを形成してなる誘電体基板を接着
し、該誘電体基板上に誘電体共振器を配設してなるMI
C発振器において、前記ステムのほぼ中央部に前記誘電
体共振器を収容する孔を設は該誘電体共振器を収容し、
該孔部に対応する前記誘電体基板の裏面に前記マイクロ
ストリップラインに結合するスロットラインを設けると
ともに、前記ステムの側面に共振周波数調整機構を設け
たこと、によって達成される。
(Ql) Structure of the Invention In order to achieve the above-mentioned object, the present invention includes bonding a dielectric substrate on which a microstrip line is formed on a stem, and arranging a dielectric resonator on the dielectric substrate. Naru MI
In the C oscillator, a hole for accommodating the dielectric resonator is provided substantially in the center of the stem, and the hole for accommodating the dielectric resonator is provided;
This is achieved by providing a slot line coupled to the microstrip line on the back surface of the dielectric substrate corresponding to the hole, and providing a resonant frequency adjustment mechanism on the side surface of the stem.

(fl 発明の実施例 以下図面を参照しながら本発明に係るMIC発振器の実
施例について詳細に説明する。
Embodiments of the Invention Hereinafter, embodiments of the MIC oscillator according to the present invention will be described in detail with reference to the drawings.

第2図は、本発明の一実施例を説明するだめのtelは
側断面図2(b)は背面図で、第1図と同等の部分につ
いては同一符号を((jしている。
FIG. 2 is a side sectional view for explaining an embodiment of the present invention. FIG. 2(b) is a rear view, and the same parts as in FIG. 1 are designated by the same reference numerals ((j).

金属たとえば黄銅からなるステム11に誘電体共振器4
を収容する誘電体共振器収容孔111と。
A dielectric resonator 4 is mounted on a stem 11 made of metal such as brass.
and a dielectric resonator housing hole 111 that accommodates the.

気密出力端字種通孔1121周波数ねし孔113および
バイアス端子挿通孔114を穿設し、前記誘電体共振器
収容孔111内に低誘電率たとえば石英等からなるスペ
ーサ12を介して前記誘電体共振器4を取着し、さらに
気密端子8を気密端子挿通孔112に、バイアス端子1
7をバイアス端子挿通孔114にそれぞれ挿入して気密
封止し、前記誘電体共振器4に対応する周波数調整ねし
孔113にロソクナソI□ 14を具備してなる周波数
調整ねじ13を螺入した状態で、前記ステJ211の所
定位置にマイクロストリップライン3および該マイクロ
ストリップライン3の裏面にスロットライン15を形成
した誘電体からなるたとえばセラミック基板2を気密接
着する。そして該マイクロストリップライン3側に能動
素子たとえばトランジスタ7を複数個搭載して回路を形
成して、前記マイクロストリップライン3の端部をステ
ム11に気密挿入してなる気密出力端子8に接続したる
のち覆板17をステム11に接着気密封止する。
An airtight output end type through hole 1121, a frequency through hole 113, and a bias terminal insertion hole 114 are formed, and the dielectric material is inserted into the dielectric resonator housing hole 111 through a spacer 12 made of a material having a low dielectric constant, such as quartz. The resonator 4 is attached, and the airtight terminal 8 is inserted into the airtight terminal insertion hole 112, and the bias terminal 1 is inserted into the airtight terminal insertion hole 112.
7 were respectively inserted into the bias terminal insertion holes 114 and hermetically sealed, and the frequency adjustment screws 13 comprising a rotor I□ 14 were screwed into the frequency adjustment screw holes 113 corresponding to the dielectric resonators 4. In this state, a microstrip line 3 and, for example, a ceramic substrate 2 made of a dielectric material with a slot line 15 formed on the back surface of the microstrip line 3 are hermetically bonded to a predetermined position of the step J211. A plurality of active elements such as transistors 7 are mounted on the microstrip line 3 side to form a circuit, and the end of the microstrip line 3 is connected to an airtight output terminal 8 formed by airtightly inserting the end of the microstrip line 3 into the stem 11. Afterwards, the cover plate 17 is hermetically sealed to the stem 11 by adhesive.

そして誘電体共振器4に対応する周波数#周整ねし13
により所定の共振周波数に調整後、蓋16で前記ステム
11に穿設した誘電体共振器収容孔111を閉じるよう
になっている。第3図は第2図のA−A’断面図で、誘
電体共振器4と、セラミック基板2の両面に配設したマ
イクロストリップライン3とスロットライン15との関
係を示したものである。
And the frequency #circumference adjustment 13 corresponding to the dielectric resonator 4
After adjusting the resonant frequency to a predetermined value, the dielectric resonator housing hole 111 formed in the stem 11 is closed with a lid 16. FIG. 3 is a sectional view taken along the line AA' in FIG. 2, showing the relationship between the dielectric resonator 4, the microstrip line 3 and the slot line 15 disposed on both sides of the ceramic substrate 2.

第4図および第5図は磁界結合を説明するだめの側面図
であり、19は磁極、20は磁界を示す。
FIGS. 4 and 5 are side views for explaining magnetic field coupling, with reference numeral 19 indicating a magnetic pole and 20 indicating a magnetic field.

(g+ 発明のリノ果 以上の説明から明らかなように、本発明に係るMIC発
振器によれば、従来の誘電体を密14シた中で配置した
構造にくらべて共振周波数の調整が密封後に行えるので
、周波数gllII整作業能重作業能率に寄与するとと
もに、製品の品質向上が期待でき安価となる利点がある
(g+ Effects of the Invention) As is clear from the above explanation, the MIC oscillator according to the present invention allows the resonance frequency to be adjusted after being sealed, compared to the conventional structure in which dielectric materials are placed in a tightly packed enclosure. Therefore, it contributes to the frequency gllII adjustment work efficiency and the work efficiency, and there is an advantage that the quality of the product can be expected to be improved and the cost can be reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のMIC発振器を説明するだめの側面図、
第2図は本発明に係るMIC発振器の一実施例を説明す
るための(alは側…i面図、 (tlH;l:背面図
、第3図は誘電体共振器の結合部1析面図、第4図およ
び第5図は磁界結合を説明するための側面図である。 図において、lおよび11はステム、2はセラミック基
板、3はマイクロストリップライン、4は誘電体共振器
、5は誘電体共振器筐体、6および13は周波数調整ね
じ17はトランジスタ、))は気密出力端子、9および
17は覆板、12はスヘ−−’)、14 ハロツクナノ
l−,1’5ハスロットライン、16は蓋、18はバイ
アス端子、19は磁極、20は磁界、111は誘電体共
振器収容孔。 +12は気密出力端子1Φ通孔、113は周波数調整ね
し孔、114はバイアス☆(11子挿i1!I孔をそれ
ぞれ示す。 茅 I 口 第2図 茅4−I21 茅5 図
Figure 1 is a side view of a conventional MIC oscillator.
FIG. 2 is a diagram for explaining an embodiment of the MIC oscillator according to the present invention. 4 and 5 are side views for explaining magnetic field coupling. In the figures, l and 11 are stems, 2 is a ceramic substrate, 3 is a microstrip line, 4 is a dielectric resonator, and 5 is a stem. 6 and 13 are the dielectric resonator housing, 6 and 13 are the frequency adjustment screws 17 are the transistors, )) are the airtight output terminals, 9 and 17 are the cover plates, 12 is the shield, 16 is a lid, 18 is a bias terminal, 19 is a magnetic pole, 20 is a magnetic field, and 111 is a dielectric resonator housing hole. +12 is the airtight output terminal 1Φ through hole, 113 is the frequency adjustment screw hole, 114 is the bias ☆ (11 child insertion i1!I hole, respectively.)

Claims (1)

【特許請求の範囲】[Claims] ステム上にマイクロストリップラインを形成してなる誘
電体基板を接着し、該誘電体基板上に誘電体共振器を配
設してなるMIC発振器において、前記ステムのほぼ中
央部に前記誘電体共振器を収ストリップラインに結合す
るスロットラインを設りるとともに、前記ステムの側面
に共振周波数關整機構を設りたことを特徴とするMIC
発振器。
In the MIC oscillator, a dielectric substrate having a microstrip line formed thereon is bonded to the stem, and a dielectric resonator is disposed on the dielectric substrate. A MIC characterized in that a slot line is provided for coupling the signal to the collecting strip line, and a resonant frequency adjusting mechanism is provided on the side surface of the stem.
oscillator.
JP22505783A 1983-11-29 1983-11-29 Mic oscillator Pending JPS60117801A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22505783A JPS60117801A (en) 1983-11-29 1983-11-29 Mic oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22505783A JPS60117801A (en) 1983-11-29 1983-11-29 Mic oscillator

Publications (1)

Publication Number Publication Date
JPS60117801A true JPS60117801A (en) 1985-06-25

Family

ID=16823361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22505783A Pending JPS60117801A (en) 1983-11-29 1983-11-29 Mic oscillator

Country Status (1)

Country Link
JP (1) JPS60117801A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0245890A2 (en) * 1986-05-14 1987-11-19 Siemens Telecomunicazioni S.P.A. Microstrip transmission line for coupling to a dielectric resonator
WO2002071594A1 (en) * 2001-03-07 2002-09-12 Hitachi, Ltd. Miniature oscillation device and method for manufacturing the same
KR100513709B1 (en) * 1999-03-31 2005-09-07 삼성전자주식회사 Cavity resonator for reducing the phase noise of a MMIC VCO
KR100552658B1 (en) * 1999-03-31 2006-02-17 삼성전자주식회사 Cavity resonator for reducing a phase noise of a voltage controlled oscillator

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0245890A2 (en) * 1986-05-14 1987-11-19 Siemens Telecomunicazioni S.P.A. Microstrip transmission line for coupling to a dielectric resonator
KR100513709B1 (en) * 1999-03-31 2005-09-07 삼성전자주식회사 Cavity resonator for reducing the phase noise of a MMIC VCO
KR100552658B1 (en) * 1999-03-31 2006-02-17 삼성전자주식회사 Cavity resonator for reducing a phase noise of a voltage controlled oscillator
WO2002071594A1 (en) * 2001-03-07 2002-09-12 Hitachi, Ltd. Miniature oscillation device and method for manufacturing the same

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