JPS60115218A - 分子ビームエピタキシャル成長装置 - Google Patents

分子ビームエピタキシャル成長装置

Info

Publication number
JPS60115218A
JPS60115218A JP58222929A JP22292983A JPS60115218A JP S60115218 A JPS60115218 A JP S60115218A JP 58222929 A JP58222929 A JP 58222929A JP 22292983 A JP22292983 A JP 22292983A JP S60115218 A JPS60115218 A JP S60115218A
Authority
JP
Japan
Prior art keywords
cell
thin film
molecular beam
forming apparatus
source cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58222929A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0232781B2 (Direct
Inventor
Shunichi Murakami
俊一 村上
Tetsuo Ishida
哲夫 石田
Sumio Sakai
酒井　純朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp, Anelva Corp filed Critical Canon Anelva Corp
Priority to JP58222929A priority Critical patent/JPS60115218A/ja
Publication of JPS60115218A publication Critical patent/JPS60115218A/ja
Publication of JPH0232781B2 publication Critical patent/JPH0232781B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/22—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP58222929A 1983-11-26 1983-11-26 分子ビームエピタキシャル成長装置 Granted JPS60115218A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58222929A JPS60115218A (ja) 1983-11-26 1983-11-26 分子ビームエピタキシャル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58222929A JPS60115218A (ja) 1983-11-26 1983-11-26 分子ビームエピタキシャル成長装置

Publications (2)

Publication Number Publication Date
JPS60115218A true JPS60115218A (ja) 1985-06-21
JPH0232781B2 JPH0232781B2 (Direct) 1990-07-23

Family

ID=16790072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58222929A Granted JPS60115218A (ja) 1983-11-26 1983-11-26 分子ビームエピタキシャル成長装置

Country Status (1)

Country Link
JP (1) JPS60115218A (Direct)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236112A (ja) * 1985-04-12 1986-10-21 Hitachi Ltd 分子線源
JPS61251116A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 分子線結晶成長装置用分子線源

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08117472A (ja) * 1994-10-21 1996-05-14 Hirose Mfg Co Ltd 全回転かまの外かま

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812233A (ja) * 1981-06-15 1983-01-24 松下電工株式会社 ラツチングリレ−駆動回路

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812233A (ja) * 1981-06-15 1983-01-24 松下電工株式会社 ラツチングリレ−駆動回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236112A (ja) * 1985-04-12 1986-10-21 Hitachi Ltd 分子線源
JPS61251116A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 分子線結晶成長装置用分子線源

Also Published As

Publication number Publication date
JPH0232781B2 (Direct) 1990-07-23

Similar Documents

Publication Publication Date Title
JP4175665B2 (ja) 単一坩堝とかかる坩堝を利用した流出（エフュージョン）源
US5976263A (en) Sources used in molecular beam epitaxy
JPH11504613A (ja) 単体るつぼ
JPS60115218A (ja) 分子ビームエピタキシャル成長装置
JPS60115219A (ja) 薄膜形成装置用蒸発源セル
JPS60137896A (ja) 分子線源用ルツボ
JP2771215B2 (ja) 分子線源用るつぼおよびそれを用いた分子線エピタキシャル成長膜の形成方法
JP3534866B2 (ja) 気相成長方法
JPS6063918A (ja) 分子線源用セル
JPS60225421A (ja) 分子線エピタキシ−用蒸発源ルツボ
JP2772533B2 (ja) 薄膜成長方法
JPH0345953Y2 (Direct)
JPS63282190A (ja) 分子線結晶成長装置
JPH01319673A (ja) レーザビームスパッタ法
JPH06122590A (ja) 分子線源セルと分子線結晶成長装置
JPS62190719A (ja) 分子線エピタキシヤル成長装置
JPH08296043A (ja) 通過式スパッタリング装置
JPS63282189A (ja) 分子線エピタキシャル成長装置
JPH0426586A (ja) 分子線結晶成長用基板ホルダ
JPS6150326A (ja) 半導体結晶成長装置
JPH0413769B2 (Direct)
JPH02243758A (ja) 真空装置
JPH0139205B2 (Direct)
JPH01138193A (ja) 分子線エピタキシャル成長装置
JPH0395923A (ja) 分子線結晶成長装置