JPS60115093A - メモリセル及びアレイ - Google Patents
メモリセル及びアレイInfo
- Publication number
- JPS60115093A JPS60115093A JP59236003A JP23600384A JPS60115093A JP S60115093 A JPS60115093 A JP S60115093A JP 59236003 A JP59236003 A JP 59236003A JP 23600384 A JP23600384 A JP 23600384A JP S60115093 A JPS60115093 A JP S60115093A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- emitter
- array
- transistors
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F5/00—Methods or arrangements for data conversion without changing the order or content of the data handled
- G06F5/06—Methods or arrangements for data conversion without changing the order or content of the data handled for changing the speed of data flow, i.e. speed regularising or timing, e.g. delay lines, FIFO buffers; over- or underrun control therefor
- G06F5/08—Methods or arrangements for data conversion without changing the order or content of the data handled for changing the speed of data flow, i.e. speed regularising or timing, e.g. delay lines, FIFO buffers; over- or underrun control therefor having a sequence of storage locations, the intermediate ones not being accessible for either enqueue or dequeue operations, e.g. using a shift register
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/551,736 US4574367A (en) | 1983-11-10 | 1983-11-10 | Memory cell and array |
| US551736 | 1983-11-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60115093A true JPS60115093A (ja) | 1985-06-21 |
| JPH0430678B2 JPH0430678B2 (https=) | 1992-05-22 |
Family
ID=24202465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59236003A Granted JPS60115093A (ja) | 1983-11-10 | 1984-11-10 | メモリセル及びアレイ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4574367A (https=) |
| EP (1) | EP0142266B1 (https=) |
| JP (1) | JPS60115093A (https=) |
| DE (2) | DE3486261T2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4922411A (en) * | 1988-12-27 | 1990-05-01 | Atmel Corporation | Memory cell circuit with supplemental current |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3487376A (en) * | 1965-12-29 | 1969-12-30 | Honeywell Inc | Plural emitter semiconductive storage device |
| US3764825A (en) | 1972-01-10 | 1973-10-09 | R Stewart | Active element memory |
| SU752490A1 (ru) * | 1976-06-03 | 1980-07-30 | Предприятие П/Я В-8466 | Трехтактный регистр сдвига |
| US4151609A (en) * | 1977-10-11 | 1979-04-24 | Monolithic Memories, Inc. | First in first out (FIFO) memory |
| JPS5564685A (en) * | 1978-11-07 | 1980-05-15 | Fujitsu Ltd | Semiconductor memory unit |
-
1983
- 1983-11-10 US US06/551,736 patent/US4574367A/en not_active Expired - Lifetime
-
1984
- 1984-10-10 DE DE84306928T patent/DE3486261T2/de not_active Expired - Fee Related
- 1984-10-10 EP EP84306928A patent/EP0142266B1/en not_active Expired - Lifetime
- 1984-10-10 DE DE198484306928T patent/DE142266T1/de active Pending
- 1984-11-10 JP JP59236003A patent/JPS60115093A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE142266T1 (de) | 1986-03-20 |
| DE3486261T2 (de) | 1994-04-28 |
| US4574367A (en) | 1986-03-04 |
| EP0142266B1 (en) | 1993-12-29 |
| EP0142266A2 (en) | 1985-05-22 |
| DE3486261D1 (de) | 1994-02-10 |
| EP0142266A3 (en) | 1987-07-01 |
| JPH0430678B2 (https=) | 1992-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3275996A (en) | Driver-sense circuit arrangement | |
| US4125877A (en) | Dual port random access memory storage cell | |
| US3953839A (en) | Bit circuitry for enhance-deplete ram | |
| CA1058320A (en) | Scr memory cell | |
| US4193127A (en) | Simultaneous read/write cell | |
| US3919566A (en) | Sense-write circuit for bipolar integrated circuit ram | |
| US3638039A (en) | Operation of field-effect transistor circuits having substantial distributed capacitance | |
| US4764899A (en) | Writing speed in multi-port static rams | |
| US4858183A (en) | ECL high speed semiconductor memory and method of accessing stored information therein | |
| US3551900A (en) | Information storage and decoder system | |
| US3886531A (en) | Schottky loaded emitter coupled memory cell for random access memory | |
| US4035784A (en) | Asymmetrical memory cell arrangement | |
| JPS5817595A (ja) | Ram二重ワ−ド線回復回路 | |
| US3629612A (en) | Operation of field-effect transistor circuit having substantial distributed capacitance | |
| EP0357749B1 (en) | Bipolar ram with no write recovery time | |
| JPS6331879B2 (https=) | ||
| JPS60115093A (ja) | メモリセル及びアレイ | |
| US4627034A (en) | Memory cell power scavenging apparatus and method | |
| JPS58147882A (ja) | 半導体記憶装置のワ−ド線放電回路 | |
| US4592023A (en) | Latch for storing a data bit and a store incorporating said latch | |
| US3441912A (en) | Feedback current switch memory cell | |
| EP0023408B1 (en) | Semiconductor memory device including integrated injection logic memory cells | |
| US3540005A (en) | Diode coupled read and write circuits for flip-flop memory | |
| US3573756A (en) | Associative memory circuitry | |
| GB2172761A (en) | Sense amplifier for semiconductor ram |