JPS60110471A - Thermal recording head - Google Patents

Thermal recording head

Info

Publication number
JPS60110471A
JPS60110471A JP58220023A JP22002383A JPS60110471A JP S60110471 A JPS60110471 A JP S60110471A JP 58220023 A JP58220023 A JP 58220023A JP 22002383 A JP22002383 A JP 22002383A JP S60110471 A JPS60110471 A JP S60110471A
Authority
JP
Japan
Prior art keywords
wire
bonding
wiring
ball
head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58220023A
Other languages
Japanese (ja)
Other versions
JPH055670B2 (en
Inventor
Shigeru Sato
滋 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP58220023A priority Critical patent/JPS60110471A/en
Publication of JPS60110471A publication Critical patent/JPS60110471A/en
Publication of JPH055670B2 publication Critical patent/JPH055670B2/ja
Granted legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
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    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
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    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494Connecting portions
    • H01L2224/4943Connecting portions the connecting portions being staggered
    • H01L2224/49431Connecting portions the connecting portions being staggered on the semiconductor or solid-state body
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    • H01L2224/732Location after the connecting process
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    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
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    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
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    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To perform bonding operations with high accuracy, good reliability, and good productivity at low cost by connecting plural places to be electrically connected with each other by aluminum ball bonding. CONSTITUTION:An aluminium wire 36 is thrust through the central part of a capillary 37 and its lower end 36a is shaped into a ball form in advance. The capillary 37 is lowered downwards 38 to press it on a pad 34 while heated for connection and then moved on the wire 35. The wire 36 in crushed by the lower end edge 37a to clamp the wire, and when the wire 36 is moved to the direction of arrow 39, the wire end 36b is cut off the connected to the upside of the wire 35. Since the lower end 36a of the aluminum wire is shaped into a ball form, the moving direction of the capillary 37 in the following bonding position after connected to the upside of the pad 34 can be arbitrarily selected.

Description

【発明の詳細な説明】 1、産業上の利用分野 本発明は感熱記録ヘッドに関するものである。[Detailed description of the invention] 1. Industrial application field The present invention relates to a thermal recording head.

2、従来技術 感熱記録ヘッド(以下、単にヘッドと略す。)は、被記
録紙又は感熱紙等の被記録体に対して直接的に若しくは
インクフィルムを介して当接された状態で、記録用の電
気信号によって発熱部がドツト状に選択加熱され、これ
によって被記録体に画像等を記録できるように構成され
ている。
2. Prior art Thermal recording heads (hereinafter simply referred to as heads) are used for recording while in contact with a recording medium such as recording paper or thermal paper, either directly or via an ink film. The heating section is selectively heated in a dot-like manner by an electric signal, and thereby an image or the like can be recorded on a recording medium.

従来のヘッドでは一般に、基板上に発熱体層を設け、こ
の上に多数の対向電極を形成して発熱部を構成しておプ
、その(信号)[極に対し基板外に配した集積回路(以
下、ICと称する。)部から目的とする画像パターンに
対応した信号を与えるようにしている。
In conventional heads, a heating layer is generally provided on a substrate, and a number of opposing electrodes are formed on this layer to form a heating section. (hereinafter referred to as IC) section provides a signal corresponding to a target image pattern.

こうしたヘッドとしては、例えば特開昭56−7898
5号、57−8177号、57−8178号、57−8
179号、57−8180号、57−43883号、5
7−43884号、57−107866号、57−10
7867号、57−107868−W、57−1824
61号、57−185170号、57−203571号
、57−203572号、等各公報に開示されたものが
ある。
As such a head, for example, Japanese Patent Application Laid-Open No. 56-7898
No. 5, No. 57-8177, No. 57-8178, No. 57-8
No. 179, No. 57-8180, No. 57-43883, 5
No. 7-43884, No. 57-107866, 57-10
No. 7867, 57-107868-W, 57-1824
There are those disclosed in various publications such as No. 61, No. 57-185170, No. 57-203571, and No. 57-203572.

ヘッドには、ダイオードマトリックス方式(以下、DM
方式と称する)と、ダイレクトドライブ方式(以下、D
D方式と称する)との2棟類の駆動方式が知られている
。いずれの方式でも、発熱体構成要素(ドツト)の数は
例えばB4サイズの記録では2048個と非常に多く、
これらの構成要素に対し同数のダイオード(1)M方式
)又は工Cチップ(DD方式)を接続することが必要と
される。この場合、それらの電気的接続個所(例えばダ
イオード又はICチップの実装部分、発熱部と隣接した
回路素子との間)の数は発熱体構成要素数の数倍にも及
んでいる。しかも、各発熱体構成要素の大きさは、分解
能の面から8本/mmとすれば12F1mピッチで11
00pの幅となシ、極めて微細なものとなる。従って、
こうした微細な構成要素に対する電気的接続は、高精度
であること、及び高信頼性、経済性を保持することが要
求される。
The head uses a diode matrix method (hereinafter referred to as DM).
method) and direct drive method (hereinafter referred to as D
Two types of drive systems are known, called the D system. In either method, the number of heating element components (dots) is extremely large, for example 2048 for B4 size recording.
It is necessary to connect the same number of diodes (1) (M type) or C chips (DD type) to these components. In this case, the number of electrical connection points (for example, the mounting portion of a diode or an IC chip, between a heat generating part and an adjacent circuit element) is several times greater than the number of heat generating elements. Furthermore, if the size of each heating element component is 8 pieces/mm from the viewpoint of resolution, then the size of each heating element component is 12F/1m pitch and 11 pieces.
With a width of 00p, it becomes extremely fine. Therefore,
Electrical connections to such minute components are required to be highly accurate, reliable, and economical.

従来から知られている電気的接続方式には次の3つがあ
る。
There are three conventionally known electrical connection methods:

(1)、Auのボールボンディング (2)、フィルムキャリア (3)、Atのウェッジボンディング しかしながら、これらの接続方式はいずれも次の如き欠
点を有している。
(1) Au ball bonding (2) Film carrier (3) At wedge bonding However, all of these connection methods have the following drawbacks.

まずAuのボールボンディングでは、Auの価格が高く
て経済性が悪いことに加えて、ダイオードやICチップ
のポンディングパッドがAtからなっているためにボン
ディング個所はAu −At接合となり、この接合は温
度上昇時に合金化してもろくなり、破壊し易く々って断
線を生じ易い。
First, in Au ball bonding, in addition to the high price of Au and poor economic efficiency, the bonding pads of diodes and IC chips are made of At, so the bonding location is an Au-At junction, and this junction is When the temperature rises, it becomes alloyed, becomes brittle, and easily breaks, resulting in wire breakage.

しかも、Auは重くて振動の影響を受け易い。Moreover, Au is heavy and easily affected by vibration.

また、フィルムキャリアの場合、テープの製作費が高く
、シかもヘッドの如く高精度に多数の接続を行なう製品
では接続の自動化を行なうことが困難である。
Furthermore, in the case of film carriers, the manufacturing cost of the tape is high, and it is difficult to automate the connections in products such as film heads that make a large number of connections with high precision.

また、AAのウェッジボンディングは、第1のボンディ
ングの終了後に次の第2のボンディング位置へAtワイ
ヤを導ひくときに、第1のボンディングの方向をそのま
ま保持して第2のボンディングを行なわねばならないか
ら、第2のボンディング位置が制限される。このため、
ボンディングの自由度が低く、生産性はAuのボールボ
ンディングよりも悪くなる。これに加えて、A4ワイヤ
を押し潰してボンディングするためにボンディング位置
でのワイヤ径(厚み)が細くなり、強度が低下して断線
を生じ易く、かつ上記したボンディング位置の制限によ
シ、オートボンダーとボンディングステージとを相対的
に回転させなければ所望の接続を行なえないため位置精
度が悪い。
Furthermore, in AA wedge bonding, when the At wire is guided to the next second bonding position after the first bonding is completed, the second bonding must be performed while maintaining the direction of the first bonding. , the second bonding position is limited. For this reason,
The degree of freedom of bonding is low, and the productivity is worse than that of Au ball bonding. In addition, since the A4 wire is crushed and bonded, the wire diameter (thickness) at the bonding position becomes thinner, the strength decreases, and wire breaks easily occur. Positional accuracy is poor because the desired connection cannot be made unless the bonder and bonding stage are rotated relative to each other.

このように、従来のボンディング方式はいずれも、ヘッ
ドの如き多数でかつ微細な接続個所のある製品における
接続には不適当である。
As described above, all conventional bonding methods are unsuitable for connecting products such as heads that have a large number of fine connection points.

3、発明の目的 本発明の目的は、高精度にして信頼性及び生産性良く、
低コストにボンディングが可能なヘッド構造を提供する
ことにある。
3. Purpose of the invention The purpose of the present invention is to achieve high precision, reliability, and productivity.
An object of the present invention is to provide a head structure that allows bonding at low cost.

4、発明の構成 即ち、本発明は、発熱部と、この発熱部を駆動する集積
回路部(IC部)とを有する感熱記録ヘッドにおいて、
互いに電気的に接続されるべき複数の個所がアルミニウ
ムのボールボンディングによって接続されていることを
特徴とする感熱記録ヘッドに係るものである。
4. Structure of the Invention That is, the present invention provides a thermal recording head having a heat generating section and an integrated circuit section (IC section) for driving the heat generating section.
The present invention relates to a thermal recording head characterized in that a plurality of points to be electrically connected to each other are connected by aluminum ball bonding.

5、実施例 以下、本発明を実施例について詳細に説明する。5. Examples Hereinafter, the present invention will be described in detail with reference to examples.

まず第1図につき、DN方式のヘッド200基本的回路
構成を説明する。これによれば、発熱部2の各構成要素
(抵抗で示しである)Rは例えば32ブロツクに分けら
れ、各ブロックには逆流防止ダイオードDが64個ずつ
接続され、各ブロック毎にドライブ回路(図示せず)に
よシ群制御が行なわれる。構成要素Rの他端側は夫々、
64本の信号ラインから記録信号Sinが選択的に印加
され、この信号に対応して上記ブロックにドライブ信号
が入った場合に、構成要素■(がジュール熱によりドツ
ト状に発熱することになる。
First, the basic circuit configuration of a DN type head 200 will be explained with reference to FIG. According to this, each component R (represented by a resistor) of the heat generating part 2 is divided into, for example, 32 blocks, each block is connected with 64 backflow prevention diodes D, and each block has a drive circuit ( (not shown) performs group control. The other end side of the component R is
When a recording signal Sin is selectively applied from 64 signal lines and a drive signal is applied to the block in response to this signal, the component (2) generates heat in a dot shape due to Joule heat.

ここで、第1図に一点鎖線26で示したラインは、各ダ
イオードDと要素Rとが電気的に接続される個所を示し
、この接続個所数は2048個所にも及ぶ。本実施例に
よれば、これらの多数の接続を第2図〜第4図に示すk
tのボールボンディングで行々っている。
Here, the line shown by the dashed-dotted line 26 in FIG. 1 indicates the location where each diode D and the element R are electrically connected, and the number of these connection locations reaches 2048 locations. According to the present embodiment, these many connections are connected as shown in FIGS. 2 to 4.
I am using T ball bonding.

即ち、各ダイオードDは、基体(例えばアルミニウム)
1上に固定されたプリント基板5にマウントされたIC
チップ27に形成されていて、Si基板28に公知の半
導体技術で拡散形成されたP型ウェル29及びN+型領
領域30の接合ダイオードからなっている。ICチップ
27は簡略化して示されておシ、表面側にはS i02
からなるパツシベーシヨン層31が形成され、この膜に
設けた貫通孔にAt電極32が被着され、更に絶縁膜3
3を介して電極32に接続されたAtポンディングパッ
ド34が被着されている。プリント基板5上には、IC
チップ27に隣接して発熱部2へ導ひかれるA7配線3
5が各ダイオードDに対応し−て設けられている。そし
て、上記のダイオードDのAtポンディングパッド34
と上記At配線35とは、同じAt製のワイヤ36によ
って互いに電気的に接続されるが、この接続がボールボ
ンディング方式で行なわれていることに注目すべきであ
る。
That is, each diode D has a substrate (e.g. aluminum)
IC mounted on a printed circuit board 5 fixed on 1
It is formed on the chip 27 and consists of a junction diode of a P type well 29 and an N + type region 30 which are diffused into a Si substrate 28 using known semiconductor technology. The IC chip 27 is shown in a simplified manner, with Si02 on the front side.
A passivation layer 31 consisting of
An At bonding pad 34 connected to the electrode 32 via 3 is deposited. On the printed circuit board 5, an IC
A7 wiring 3 adjacent to the chip 27 and led to the heat generating part 2
5 is provided corresponding to each diode D. And the At bonding pad 34 of the diode D mentioned above.
and the At wiring 35 are electrically connected to each other by the same wire 36 made of At, but it should be noted that this connection is made by a ball bonding method.

このボンディング方式によれば、Atワイヤ36の一端
側は予めボール状に形成されていて、このボール部分3
6aを上記パッド34上に加熱下で押し付けることによ
ってパッド34に対し電気的(更には機械的)に結合せ
しめられる。従って、コノホンディング部分は同じ八t
Nのボール部分36a とパッド34との接合からなる
ために、両者は充分に一体化して強力に結合し合い、破
壊に充二分に耐える構造となる。まだ、Atワイヤ3・
6の他端側36bFiAt配線35上にウェッジボンデ
ィングと同様の構造で結合せしめられるが、両者は共に
A4製であるためにAuとAtの様々もろい合金化が生
じず、結合強度は充分である。但、ば、実用上充分に破
壊に耐えると共に、上記一端側36 aがボールボンデ
ィングでパッド34と接続されているためにワイヤ36
全体としての結合強度は強力なものとなっている。これ
に反し、従来のAtウェッジボンディングを第3図に適
用した場合、AAワイヤの両端部が共にウェッジボンデ
ィングでパッド34及び配線35に接続されることにな
るから、本例によるボンディング構造に比べて強度的に
ずっと弱くなる。々お、ワイヤ36として例えばAA−
8i(99:1)製のものを使用するワイヤ自体の強度
を大きくできる。
According to this bonding method, one end side of the At wire 36 is previously formed into a ball shape, and this ball portion 3
By pressing 6a onto the pad 34 under heat, it is electrically (and mechanically) coupled to the pad 34. Therefore, the conohonding part is the same 8t
Since the N ball portion 36a and the pad 34 are joined together, the two are sufficiently integrated and strongly bonded to each other, resulting in a structure that is sufficiently resistant to breakage. Still, At wire 3.
It is bonded to the FiAt wiring 35 on the other end side 36b of 6 in a structure similar to wedge bonding, but since both are made of A4, various brittle alloys of Au and At do not occur, and the bonding strength is sufficient. However, since the wire 36 is sufficiently resistant to breakage in practical use and the one end side 36a is connected to the pad 34 by ball bonding, the wire 36
The overall bond strength is strong. On the other hand, when the conventional At wedge bonding is applied to the structure shown in FIG. 3, both ends of the AA wire are connected to the pad 34 and the wiring 35 by wedge bonding. It becomes much weaker in strength. For example, the wire 36 is AA-
The strength of the wire itself made of 8i (99:1) can be increased.

また、本例による上記のAtボールボンディング方式は
、軽量のAtワイヤ36を使用するものであるから、振
動に強くガっておシ、これも破壊が生じない一因である
。しかも、コストが非常に安いので経済的にも有利であ
る。
Further, since the above-mentioned At ball bonding method according to this example uses the lightweight At wire 36, it is strongly resistant to vibration, which is also one of the reasons why no breakage occurs. Furthermore, since the cost is very low, it is economically advantageous.

更に、Atワイヤ36によるポールボンディングである
から、ダイオードDと配線35との間をオートボンダー
によって高精度でかつ自動的に接続することができる。
Furthermore, since pole bonding is performed using the At wire 36, the diode D and the wiring 35 can be automatically connected with high precision by an autobonder.

なお、上記の配線35は、セラミックス等の抵抗体板3
上に対応した個数設けられた発熱体層(例えば窒化メン
タル膜)8(第1図のRに相当)上に導びかれ、対向し
たAt配線に(第1図のSinの印加されるライン)と
の間に流れる電流で発熱体層8を選択的に発熱させる構
造となっている。
Note that the above wiring 35 is connected to the resistor plate 3 made of ceramic or the like.
The heat generating layer (for example, nitride mental film) 8 (corresponding to R in FIG. 1), which is provided in a corresponding number on the top, is guided to the opposing At wiring (the line where Sin is applied in FIG. 1). The structure is such that the heating element layer 8 selectively generates heat by a current flowing between the two.

第4図には、本例によるボンディングの状況が示されて
いる。キャピラリー37の中心部には公知のウェッジボ
ンディングの場合と同様にAtワイヤ36が通されるが
、その下端部36aは公知の放電又は水素トーチによる
加熱で溶融せしめられて予めボール状に形成される。そ
して、キャピラリー37を下方38へ下げ、加熱下にパ
ッド34上に押し付けてボール状にパッド34と接続セ
ージめた後、キャピラリー37を配a35上に移動ぜせ
、その下端エツジ37aでワイヤ36を押し潰した後、
ワイヤをクランプし、矢印39方向へ移動させると、ワ
イヤ端36bが切断され、配線35上に結合せしめられ
る。
FIG. 4 shows the bonding situation according to this example. An At wire 36 is passed through the center of the capillary 37 as in the case of known wedge bonding, but its lower end 36a is melted by known discharge or heating with a hydrogen torch and formed into a ball shape in advance. . Then, the capillary 37 is lowered downward 38 and pressed onto the pad 34 under heating to form a ball-like connection with the pad 34.Then, the capillary 37 is moved onto the arrangement a35, and the wire 36 is connected with its lower edge 37a. After crushing
When the wire is clamped and moved in the direction of arrow 39, wire end 36b is cut and bonded onto wiring 35.

この人tボールボンディングによれば、キャピラリー3
7下に露出したAAクワイヤ下端36aを予めボール状
にしているので、パッド34上への接続後、次のボンデ
ィング位置のキャピラリー37の移動方向はボール部分
36aの全周において任意に選択できる。従って、図示
した配線35の如くパッド34に対し一定の方向で対応
している第2のボンディング位置へのキャピラリー37
の移動は、配線35の位置が仮にずれていても常に実現
可能であり、ボンディング方向の自由度及びボンディン
グの位置精度を高くする仁とができる。
According to this person t-ball bonding, capillary 3
Since the lower end 36a of the AA choir exposed below the capillary 37 is made into a ball shape in advance, the moving direction of the capillary 37 at the next bonding position after connection onto the pad 34 can be arbitrarily selected around the entire circumference of the ball portion 36a. Therefore, the capillary 37 is connected to a second bonding position corresponding to the pad 34 in a fixed direction as shown in the wiring 35.
This movement can always be realized even if the position of the wiring 35 is shifted, and it is possible to increase the degree of freedom in the bonding direction and the accuracy of the bonding position.

こうして、ダイオードDと発熱部構成要素との間におけ
る2000〜3000個所にも及ぶ接続個所を高精度に
して信頼性良く、低コストに接続することができ、接続
の歩留シもAtウェッジボンディングの不良率(4〜5
本/1000本)及びAuボールボンディングの不良率
(1〜2本/ 100027.)に比べ1本以下/10
00本の不良率に向上さぜることか可能である。
In this way, as many as 2,000 to 3,000 connection points between the diode D and the heat generating component can be connected with high accuracy, reliability, and low cost, and the connection yield is also lower than that of At wedge bonding. Defective rate (4~5
less than 1 piece/10 compared to Au ball bonding (1~2 pieces/100027.)
It is possible to improve the defective rate to 0.00 pieces.

このことは、次の実験事実にょシ確認された。This was confirmed by the following experimental facts.

第2図及び第3図において、各部を次の如くに形成した
In FIGS. 2 and 3, each part was formed as follows.

A、aパッド34:1+5+厚、1.00X100/1
77!Atパツド34の数=1ブロック当シロ4個At
ワイヤ36 m AA+IXS+、25pmφボンディ
ング個所: 4096個所(Atワイヤ本数で2048
本) ボンディング条件: Atバッド34上ヘノ抑圧: 400mN(= ユ゛−
トン) Atバッド34上への抑圧時間:30m5ec超音波振
幅:0.7pm(周波数60 Kl−Jz )ボール部
分36a:Arガス中、容量放電(capacitor
 discharge )法により形成 配線35:At薄膜(又はPct−Ag薄膜)配線35
(又は12):1100p幅、125pmピッチ 結果は以下の通シであシ、従来のボンディング方式と比
較して示した。
A, a pad 34:1+5+thickness, 1.00X100/1
77! Number of At pads 34 = 4 pieces per block
Wire 36 m AA+IXS+, 25 pmφ Bonding locations: 4096 locations (2048 At wires)
Bonding conditions: Atbud 34 top heno suppression: 400mN (= Yu-
) Suppression time on the At pad 34: 30 m5ec Ultrasonic amplitude: 0.7 pm (frequency 60 Kl-Jz) Ball portion 36a: Capacitive discharge (capacitor) in Ar gas
Wiring 35 formed by the discharge method: At thin film (or Pct-Ag thin film) wiring 35
(or 12): 1100p width, 125pm pitch The results are shown below in comparison with the conventional bonding method.

ボンディング速度:0.2sec以下/ワイヤ1本(従
来のAAウェッジボ ンディングでは約0.5sec /ワイヤ1本) 歩留り:不良率1本以下/2000本 (従来のAtウェッジボンディング では4〜5本/1000本) 完全自動化:Auボールボンディングとほぼ同様の装置
で実現可能 信頼性:耐熱、熱サイクル試験(耐熱試験は250℃で
1000hrで、熱サイクル試験は一50℃から250
℃まで1000cyc l eで、いずれも各2000
本をチェックし、接続抵抗変化と、引張強 度を調べた。)でAuボールボンデ ィングやAtウェッジボンディング より良好 次に、本発明の第2の実施例を第5図〜第7図につき述
べる。
Bonding speed: 0.2 sec or less/1 wire (about 0.5 sec/1 wire in conventional AA wedge bonding) Yield: 1 or less defective wire/2000 wires (4 to 5 wires/1000 in conventional At wedge bonding) Full automation: Can be achieved with almost the same equipment as Au ball bonding Reliability: Heat resistance, thermal cycle test (Heat resistance test is 250℃ for 1000 hours, thermal cycle test is from -50℃ to 250℃)
1000 cycles up to ℃, 2000 cycles each
I checked the book and examined the change in connection resistance and tensile strength. ) is better than Au ball bonding or At wedge bonding.Next, a second embodiment of the present invention will be described with reference to FIGS. 5 to 7.

この例のヘッド20はDD方式であって、共通の基体(
例えばアルミニウム基板)1上に、発熱部2を設けた抵
抗体板(例えばアルミナ等のセラミックス板)3と、多
数(例えば64個)のICチップ4を固定したプリント
基板(例えばガラス拳エポキシ又はセラミックス板)5
とが一定の間隙6を置いて対向して固定されている。I
Cチップ4と発熱部2との電気的接続は、上記間隙6上
にてプリント基板5と抵抗体板3との間に架は渡された
フィルムキャリアテープ7によって行なわれている。
The head 20 in this example is of the DD type, and has a common base (
For example, an aluminum substrate) 1 has a resistor plate (for example, a ceramic plate made of alumina, etc.) 3 on which a heat generating part 2 is provided, and a printed circuit board (for example, a glass fist epoxy or ceramic plate) on which a large number (for example, 64) of IC chips 4 are fixed. board) 5
are fixed facing each other with a certain gap 6 between them. I
Electrical connection between the C-chip 4 and the heat generating section 2 is made by a film carrier tape 7 which is stretched between the printed circuit board 5 and the resistor plate 3 above the gap 6.

この接続方式を詳述すると、発熱部2は、抵抗体板3上
に被着された発熱体(例えば窒化タンタル)層8上に形
成されている例えばアルミニウム環の共通の接地電極9
と、同発熱体層8上において接地電極9の長さ方向に多
数本(B4サイズでは8本/耐)配列せしめられている
例えばアルミニウム環の信号電極10との各対向部分1
1によって形成されている。一方、ICチップ4は一定
個数毎に、30で示した分離ラインで互いに接合された
別々のプリント基板5上にマウントされ、そのAt製ポ
ンディングパッド40と、プリント基板5上に所定パタ
ーンに設けられた例えばアルミニウム環の配線12との
間がAtのワイヤ13によって上述したと同様のボール
ボンディングによりボンディングされている。なお、上
記の各配線パターンは簡略図示され、かつ他の配線部分
は図示省略されている。また、発熱体層8は発熱部2に
のみ設けられてよい。
To explain this connection method in detail, the heat generating part 2 is connected to a common ground electrode 9 made of, for example, an aluminum ring, which is formed on a heat generating body (for example, tantalum nitride) layer 8 deposited on the resistor plate 3.
and each facing portion 1 of the signal electrode 10 made of, for example, an aluminum ring, which is arranged in the length direction of the ground electrode 9 on the heating element layer 8 in large numbers (8 pieces/proof in B4 size).
It is formed by 1. On the other hand, the IC chips 4 are mounted in fixed numbers on separate printed circuit boards 5 that are bonded to each other at the separation line 30, and the At bonding pads 40 and the IC chips 4 are mounted in a predetermined pattern on the printed circuit board 5. The At wire 13 is bonded to the wire 12 made of, for example, an aluminum ring by the same ball bonding as described above. Note that each of the above-mentioned wiring patterns is illustrated in a simplified manner, and other wiring portions are omitted from the illustration. Further, the heat generating layer 8 may be provided only in the heat generating section 2.

フィルムキャリアテープ7は、例えばポリイミド基板1
4上に、上記信号電極1o及び配線12に対応した本数
(例えば64本)の例えば銅箔製のリード15が接着さ
れたものからなっている。
The film carrier tape 7 is, for example, a polyimide substrate 1.
A number of leads 15 (for example, 64 leads) corresponding to the signal electrodes 1o and wiring lines 12 (for example, 64 leads) made of, for example, copper foil are bonded onto the lead wires 4.

これらのリード15と信号電極10及び配1i1112
との接続はいわゆるビームリード方式で行なってよく、
リード15の両端部を予め幾分張出させておき、ここを
熱圧着して接続を行なうことができる。
These leads 15, signal electrodes 10 and wiring 1i1112
The connection may be made by the so-called beam lead method,
Connection can be made by making both ends of the lead 15 slightly overhang in advance and then thermocompression bonding them.

なお、上記した各電極又は配線の形成、ICチップのマ
ウント及びワイヤボンディングは、公知の半導体装技術
によって行なえるので、それらの詳細な説明は省略する
。また、図示省略したが、第3図において抵抗体板3上
には更に、5in2膜及び酸化タンタル膜(耐摩耗被膜
)が順次被着される。
Note that the formation of the above-mentioned electrodes or wiring, mounting of the IC chip, and wire bonding can be performed using known semiconductor device technology, so detailed explanation thereof will be omitted. Although not shown, a 5in2 film and a tantalum oxide film (wear-resistant coating) are further sequentially deposited on the resistor plate 3 in FIG.

上記の如くに構成されたヘッドにおいては、ICチップ
4のパッド40に対しAtワイヤ13のボール状部分が
ボールボンディング方式で結合され、かつ他端部は配線
12に対しウェッジボンディングで結合されている。こ
のようなボンディング方式では、ICチップ4の各ポン
ディングパッドに対しAtボールボンディングが採用さ
れているので、既述した如くAtボール部分があらゆる
方向において第2のボンディング位置に対し等価であシ
、配線12に対し位置的な制約を受けることなくボンデ
ィングが可能となる。従ってAtワイヤによるボンディ
ングを高精度に行なうことができると共に、キャピラリ
ーとプリント基板とを相対的に回転させなくてもキャピ
ラリーのみを所定方向へ動かすだけでボンディングが可
能である。
In the head configured as described above, the ball-shaped portion of the At wire 13 is bonded to the pad 40 of the IC chip 4 by ball bonding, and the other end is bonded to the wiring 12 by wedge bonding. . In such a bonding method, since At ball bonding is adopted for each bonding pad of the IC chip 4, the At ball portion is equivalent to the second bonding position in all directions as described above. Bonding can be performed without positional restrictions on the wiring 12. Therefore, bonding using At wires can be performed with high precision, and bonding can be performed simply by moving only the capillary in a predetermined direction without rotating the capillary and the printed circuit board relative to each other.

第8図は、本発明の他の実施例を示すものである。FIG. 8 shows another embodiment of the invention.

この例では、上記のフィルムキャリアテープ7に代えて
、両配線12−10の接続KAtワイヤ16によるワイ
ヤボンディングを適用している。
In this example, instead of the film carrier tape 7 described above, wire bonding is applied using a KAt wire 16 connecting both wirings 12-10.

仁の接続は、既述したAtボールボンディング方式によ
って行なっている。これは、ICチップ4と配線12と
をAtボールボンディングで接続することと併用してよ
い。
The connection between the two ends is performed by the At ball bonding method described above. This may be used in combination with connecting the IC chip 4 and the wiring 12 by At ball bonding.

なお、第6図においてテープ7上にリード15を形成す
る代りに通常の配線を形成し、これらを上記配線12.
10とAtボールボンディングすることも可能である。
In FIG. 6, instead of forming the leads 15 on the tape 7, ordinary wiring is formed and these are connected to the wiring 12.
10 and At ball bonding is also possible.

また、第8図では、 ICチップ4は、上記したように
ワイヤボンディングで配線12と接続する以外にも、フ
リップチップ方法がなく、接続の信頼性がよシ向上する
Further, in FIG. 8, the IC chip 4 is connected to the wiring 12 by wire bonding as described above, but there is no flip-chip method, and the reliability of the connection is further improved.

第9図は、更に他の実施例を示すものである。FIG. 9 shows yet another embodiment.

この例によれば、上述した例とは異なって、発熱部2と
IC部とを共通の基体21の表、裏に夫々設けている。
According to this example, unlike the above-mentioned example, the heat generating section 2 and the IC section are provided on the front and back sides of a common base 21, respectively.

このためには、基体21の端部にスルーホール17を形
成し、公知のスルーホールメッキ技術等によってAt配
線10を基体21の表側から裏側にまで延設し、との延
設部分を上述した配線12に置き換えて使用することが
できる。
For this purpose, a through hole 17 is formed at the end of the base 21, and the At wiring 10 is extended from the front side to the back side of the base 21 using a known through hole plating technique, etc., and the extension portion is as described above. It can be used in place of the wiring 12.

このようにすれば、ヘッドを更にコンパクト化できると
同時に、発熱部とIC部との接続にワイヤボンディング
やフィルムキャリアテープが不要となるから、信頼性が
更に向上する。但、発熱部20発熱がIC部へ影響しな
いように、基体21を!サンドイッチ構造とし、中間層
として一点鎖線で示す如き断熱層(例えばセラミックス
)18を設けるのが望ましい。
In this way, the head can be made more compact, and at the same time, wire bonding and film carrier tape are not necessary for connecting the heat generating part and the IC part, so reliability is further improved. However, the base 21 should be carefully fixed so that the heat generated by the heat generating part 20 does not affect the IC part! It is preferable to adopt a sandwich structure and provide a heat insulating layer (eg, ceramic) 18 as shown by a dashed line as an intermediate layer.

なお、第9図において、スルーホール17を介しての接
続以外にも、配線10を基体21の側端面上で表から裏
へと延設しても差支えない。
In addition, in FIG. 9, in addition to the connection through the through hole 17, the wiring 10 may be extended from the front to the back on the side end surface of the base 21.

なお、上述した各側によるヘッドはいずれも、発熱部2
と共にICチップ4を共通の支持体である基体上に設け
ているので、ヘッド構成が著しく簡略化若しくはコンパ
クトなものとなる。との場合、特にIC部は、ICチッ
プ4のマウント及び配線へのワイヤボンディングで実装
されるが、作動時にICチップ4から発生する熱は下地
の基板5(更には1)を通して放散されるから、ICの
熱破壊を効果的に防止できる。また、プリント基板5は
発熱部2側の抵抗体板3に対し上記間隙6を置いて分離
して対向配置されているので、発熱部2で生じた熱はプ
リント基板5側へ殆んど伝達されることはなく、この点
でもIC部を有効に保護することができる。
Incidentally, all of the above-mentioned heads on each side have a heating part 2.
At the same time, since the IC chip 4 is provided on the base which is a common support, the head structure can be significantly simplified or compacted. In this case, the IC part in particular is mounted by mounting the IC chip 4 and wire bonding to the wiring, but the heat generated from the IC chip 4 during operation is dissipated through the underlying substrate 5 (and even 1). , heat damage to the IC can be effectively prevented. In addition, since the printed circuit board 5 is arranged to face the resistor plate 3 on the side of the heat generating section 2, separated by the above-mentioned gap 6, most of the heat generated in the heat generating section 2 is transferred to the printed circuit board 5 side. In this respect as well, the IC section can be effectively protected.

プリント基板5と抵抗体板3とが上記のように分離して
設けることの他の利点としては、そのように構成するこ
とによって抵抗体板3自体の幅を狭くできる(即ち小幅
で長尺状の抵抗体板にできる)から、発熱体層8を例え
ばスパッタ法で形成する際に抵抗体板3をスパッタ装置
内へ装入し易く、また一度に処理される抵抗体板の個数
も増やせるために量産性が向上することになる。
Another advantage of arranging the printed circuit board 5 and the resistor plate 3 separately as described above is that by configuring them in this way, the width of the resistor plate 3 itself can be narrowed (i.e., it can be made narrow and elongated). ), it is easy to load the resistor plate 3 into the sputtering device when forming the heating element layer 8 by sputtering, for example, and the number of resistor plates processed at one time can be increased. This will improve mass productivity.

また、ICチップ4をマウントするプリント基板5は、
上述した如く、ICチップの一定個数毎に別々に設けら
れているので、ICチップのワイヤボンディングとの関
連で顕著な効果がある。一般に知られているように、全
自動化されたワイヤボンディング時の歩留りは、ボンデ
ィング位置のずれ等の要因から0.998(99,8%
)であるとされ、ワイヤ数(n)に応じて(0,998
)n になるものとされている。従って仮に、上記とは
異なって1枚のみのプリント基板上に多数のICチップ
をマウントしたとき、例えばワイヤの総本数を、300
0本とすれば歩留は(o、 99 B )18000キ
0.0025となることがある。これに対し、本実施例
のようにプリント基板5を幾つかに分けると、プリント
基板上のICチップ数(従ってワイヤ本数)を減らせる
から、各プリント基板5上のICチップ数に応じたワイ
ヤ数を各プリント基板につき例えば500本にでき、こ
のためにワイヤボンディングの歩留は各プリント基板に
ついて夫々(0,998)560キ0.3675となる
。従って、本実施例のようにプリント基板を複数(例え
ば6枚)に分けることによって、歩留が大幅に向上する
ことになる。
Moreover, the printed circuit board 5 on which the IC chip 4 is mounted is
As described above, since they are provided separately for each fixed number of IC chips, there is a significant effect in connection with wire bonding of IC chips. As is generally known, the yield rate during fully automated wire bonding is 0.998 (99.8%) due to factors such as deviations in the bonding position.
), and depending on the number of wires (n), (0,998
)n. Therefore, unlike the above, if a large number of IC chips are mounted on only one printed circuit board, for example, the total number of wires is 300.
If it is set to 0, the yield may be (o, 99 B) 18000 x 0.0025. On the other hand, if the printed circuit board 5 is divided into several parts as in this embodiment, the number of IC chips (and therefore the number of wires) on the printed circuit board can be reduced. The number can be, for example, 500 for each printed circuit board, so that the wire bonding yield is (0,998)560 x 0.3675 for each printed circuit board. Therefore, by dividing the printed circuit board into a plurality of parts (for example, six boards) as in this embodiment, the yield can be significantly improved.

ICチップ4は各プリント基板5毎にマウントされ、ワ
イヤボンディングされた後に、各プリント基板5が基体
1上に接着等で固定されるが、この際、基体1には必ず
と言ってよい程反りがあシ、その表面は全体として平担
ではない。このため、仮に、1枚のみのプリント基板を
基体1上に固定した場合、両者の密着性が悪く、接着不
良が生じ易い。しかし、本実施例によれば、プリント基
板を分割し、個々に基体1上に固定できるので、上記に
比べて基体1の表面性の影響を緩和し、個々のプリント
基板5の基体1に対する密着性は良くなり、接着強度が
向上する。
The IC chip 4 is mounted on each printed circuit board 5, and after wire bonding, each printed circuit board 5 is fixed onto the base 1 by adhesive or the like, but at this time, the base 1 is almost always warped. The surface is not flat as a whole. For this reason, if only one printed circuit board is fixed onto the base 1, the adhesion between the two will be poor and poor adhesion will likely occur. However, according to this embodiment, since the printed circuit board can be divided and individually fixed onto the base 1, the influence of the surface properties of the base 1 can be alleviated compared to the above, and the individual printed circuit boards 5 can be tightly attached to the base 1. The adhesive properties are improved and the adhesive strength is improved.

なお、本実施例において、上記の如くに位置調整された
プリント基板5上の各配線12と、発熱部2側の信号電
極配線10との間が、フィルムキャリアテープ7のリー
ド15によってビームリード方式で電気的(及び機械的
)に接接される場合、ICチップ4の複数個(例えば2
個)当たり1枚のテープ7が夫々使用されている。1個
のICチップ4に対し1枚のテープ7を使用してもよい
が、上記のように複数のICチップ当91枚のテープ7
を使用すれば、ヘッド全体としてのフィルムキャリアテ
ープの使用枚数を減らせ、この分かなシのコストダウン
を図れることになる。但、いずれの場合も、フィルムキ
ャリアテープ7を用い、ICチップ4を別のプリント基
板5上にマウントすると、テープ上には配線としてのC
u1J−ド15のみを所定パターンに設けるだけでよく
、そのパターは簡略化できる。第8図の例では、フィル
ムキャリアテープを用いていないのでコストダウンが可
能である。しかも、ICチップ4をすべてプリント基板
5側に配し、これを配線12、リード15、配線10を
介して発熱部2に接続すれは、ICチップの実装密度を
高めることができ、テープ7では配線本数に応じた数の
リードを公知のメタライジング技術で容易かつ正確に形
成することができる。
In this embodiment, a beam lead method is used to connect each wiring 12 on the printed circuit board 5 whose position has been adjusted as described above and the signal electrode wiring 10 on the side of the heat generating part 2 using the leads 15 of the film carrier tape 7. If the IC chips 4 are electrically (and mechanically) connected to
One piece of tape 7 is used for each piece. One piece of tape 7 may be used for one IC chip 4, but as described above, 91 pieces of tape 7 may be used for each plurality of IC chips.
By using this, the number of film carrier tapes used for the entire head can be reduced, and the cost of this component can be reduced. However, in either case, when the IC chip 4 is mounted on another printed circuit board 5 using the film carrier tape 7, the C as wiring is placed on the tape.
It is sufficient to provide only the u1J-dos 15 in a predetermined pattern, and the putter can be simplified. In the example shown in FIG. 8, cost reduction is possible because no film carrier tape is used. Moreover, by arranging all the IC chips 4 on the printed circuit board 5 side and connecting them to the heat generating part 2 via the wiring 12, leads 15, and wiring 10, it is possible to increase the mounting density of the IC chips. The number of leads corresponding to the number of wires can be easily and accurately formed using a known metallizing technique.

次に、上述した各実施例によるヘッド、例えば第5図〜
第7図に示したヘッドを使用した感熱記録方法及びその
装置を説明する。
Next, the head according to each of the above-mentioned embodiments, for example, FIGS.
A thermal recording method and apparatus using the head shown in FIG. 7 will be explained.

第10図の例によれば、第5図〜第7図に示したヘッド
20をインクフィルム41を介して被記録紙33に当接
させた感熱転写タイプの感熱記録装置59において、ケ
ース53内に感熱記録のだめの各種装置が組込まれてい
る。
According to the example of FIG. 10, in a thermal transfer type thermal recording device 59 in which the head 20 shown in FIGS. 5 to 7 is brought into contact with the recording paper 33 via the ink film 41, Various types of heat-sensitive recording devices are incorporated.

被記録紙63は、例えばカセット64内に折畳み状態で
収能され、ローラー55を経て熱転写部56へ、送られ
、転写後は矢印Aの如く装置外へ排紙される。インクフ
ィルム41は、供給ロール42から、ガイドローラ43
、駆動ローラー44を経て熱転写部56へ送られ、更に
駆動ローラー45から巻取りローラー46に巻取られる
。なお、インクフィルム41は、例えば供給ロール42
とガイドローラー43との間で、熱溶融性インク(図示
せず)が塗布されるように構成されている。
The recording paper 63 is stored in a folded state in a cassette 64, for example, and is sent to a thermal transfer section 56 via a roller 55. After being transferred, the paper is discharged out of the apparatus as shown by arrow A. The ink film 41 is transferred from the supply roll 42 to the guide roller 43.
, and is sent to a thermal transfer section 56 via a drive roller 44, and then wound up from a drive roller 45 to a winding roller 46. Note that the ink film 41 is, for example, a supply roll 42.
The structure is such that hot-melt ink (not shown) is applied between the guide roller 43 and the guide roller 43 .

インクフィルム41の移動経路中において、駆動ローラ
−440手前位置に熱溶融性インクを塗布したインクフ
ィルム41を検出するだめの7オトセンサ(例えば赤外
光センサ)47が配されている。まだ被記録紙63の検
出用として、圧接ローラー48の手前位置にフォトセン
サ(例えば赤外光センサ)49が配されている。
In the movement path of the ink film 41, a seven-dimensional sensor (for example, an infrared light sensor) 47 for detecting the ink film 41 coated with heat-melting ink is arranged at a position in front of the drive roller 440. A photosensor (for example, an infrared light sensor) 49 is disposed in front of the pressure roller 48 to detect the recording paper 63.

熱転写部56には、上述したヘッド20とプラテンロー
ラー54との組が設けられている。また、被記録紙33
及びインクフィルム41を挾着するための圧接ローラー
48が配されている。
The thermal transfer section 56 is provided with a combination of the above-described head 20 and platen roller 54. In addition, the recording paper 33
A pressure roller 48 for clamping the ink film 41 is also provided.

なお、図面中の矢印Bは、圧接駆動機構を有することを
示している。
Note that arrow B in the drawings indicates that a pressure contact drive mechanism is provided.

こうした感熱記録装置59において注目すべきことは、
第11図に拡大図示する如くにプラテンローラー54と
ヘッド20との間に被記録紙63とインクフィルム41
とを発熱部2の位置で挾着して記録を行なう(即ち、イ
ンクフィルム4]上の熱溶融性インク50を選択的に加
熱、溶融せしめて被記録紙63上に記録パターン50′
を形成する)際に、上述した如きヘッド構成に基いて発
熱部2を図中のへ□ラド左端側に設けることができるこ
とから、記録直後に被記録紙63をヘッド20外へ取出
せることである。この結果、記録後、寸もない時間内に
被記録紙63上の記録パターン50′を目視することが
でき、椿めて都合がよい。これに反し、従来のヘッドの
ように、発熱部がヘッドの中間位置にある場合には、発
熱部とヘッド端部との間には本実施例のヘッドに比較(
−てかなりの距離があるため、その分だけ記録直後に被
記録紙が出てくるまでに時間を要し、使用者にとって扱
いすらいという問題が生じる。
What should be noted about such a thermal recording device 59 is that
As shown in an enlarged view in FIG. 11, a recording paper 63 and an ink film 41 are placed between the platen roller 54 and the head 20.
The heat-melting ink 50 on the ink film 4 is selectively heated and melted to form a recording pattern 50' on the recording paper 63.
Since the heat generating part 2 can be provided on the left side of the head 20 in the figure based on the head configuration as described above, the recording paper 63 can be taken out of the head 20 immediately after recording. be. As a result, the recorded pattern 50' on the recording paper 63 can be visually observed within a very short time after recording, which is very convenient. On the other hand, when the heat generating part is located in the middle of the head as in the conventional head, there is a gap between the heat generating part and the end of the head (compared to the head of this embodiment).
- Since there is a considerable distance between the recording paper and the recording paper, it takes time for the recording paper to come out immediately after recording, which creates a problem for the user in handling the recording paper.

第12図には、感熱紙を用いる感熱記録装置59を示し
、これによれば、ケース53内にて感熱紙61が供給ロ
ール62から送出され、ヘッド20と(23) プラテンローラー74との間で挾着されてヘッド20に
よる加熱で選択的に発色せしめられる。そして、この感
熱紙は画像が色パターンとして記録された状態で搬送ロ
ーラー65及び66間から排出される。
FIG. 12 shows a thermal recording device 59 using thermal paper. According to this, thermal paper 61 is fed out from a supply roll 62 in a case 53, and passes between the head 20 and the (23) platen roller 74. and is selectively colored by heating with the head 20. The thermal paper is then discharged from between the transport rollers 65 and 66 with the image recorded as a color pattern.

以上、本発明を例示したが、上述の例は本発明の技術的
思想に基いて更に変形が可能である。
Although the present invention has been illustrated above, the above-mentioned example can be further modified based on the technical idea of the present invention.

例えば、発熱部及びIC部の配置や形状、層構成、材料
、電気的接続方式等は種々変更してよい。
For example, the arrangement, shape, layer structure, material, electrical connection method, etc. of the heat generating part and the IC part may be changed in various ways.

上述のプリント基板はヘッド全長に亘って1枚のみ使用
してよいし、また発熱部とICとは単一の基体に対し直
接設けることもできる。また、上述のAtボールボンデ
ィングが適用される個所は、上述した位置に限定される
ことばなく、ヘッドにおける他の電気的接続個所にも適
用可能である。
Only one printed circuit board may be used over the entire length of the head, and the heat generating section and IC may be directly provided on a single base. Furthermore, the locations to which the above-described At ball bonding is applied are not limited to the above-mentioned locations, and can also be applied to other electrical connection locations in the head.

6 発明の作用効果 本発明は上述した如く、Atのボールボンディングによ
多接続するようにしたので、コストダウンを図れると共
に、At−At間の強力な結合が得られかつ断線のしに
くい信頼性の高いボンディング(24) と、第2のボンディング位置へはあらゆる方向であるこ
とによる高精度で自由度のあるボンディングとが可能と
なる。
6. Effects of the Invention As described above, the present invention allows multiple connections to be made by At ball bonding, thereby reducing costs, providing a strong connection between At and At, and providing reliability that prevents disconnection. It is possible to perform bonding (24) with a high degree of accuracy and a high degree of freedom in bonding since the second bonding position can be reached in any direction.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明の実施例を示すものであって、第1図は感
熱記録ヘッドの等価回路図、第2図はこのヘッドの一部
分の拡大平面図、第3図は第2図のX−X線拡大断面図
、第4図はAtボールボンディングの状況を示す断面図
、 第5図は他の感熱記録ヘッドの一部分の平面図、 第6図は第5図のY−X線拡大断面図、第7図は第5図
のZ−Z線拡大断面図、第8図、第9図は更に他の感熱
記録ヘッドの各断面図、 第10図は感熱転写記録装置全体の概略断面図、 第11図は第10図の要部拡大図、 第12図は感熱紙を用いる感熱記録装置全体の概略断面
図 である。 なお、図面に示された符号において、 1.21*s**110・基体 2・・・・・・・・・・・発熱部 3・・・・・・・・・・・抵抗体板 4.27・・・・・・・ICチップ 5・・・・・・・・・・・プリント基板8、 R・・・
・・・・・発熱体層 10、 12 、35 壷 ・ ・ At 配線13.
16.36 ・・・Atワイヤ 2.0・・拳・・・・−・書ヘッド 34.40 ・e・・・争Atパッド 35 B −e * * −e −−−ボール状部分3
7・・・・・・・・會・キャピラリーD ・・・・・・
・・・・ダイオード である。 代理人 弁理士 逢 坂 宏(他1名)(27) C)
The drawings show an embodiment of the present invention, in which FIG. 1 is an equivalent circuit diagram of a thermal recording head, FIG. 2 is an enlarged plan view of a portion of this head, and FIG. 3 is taken along line X-X in FIG. 4 is a sectional view showing the state of At ball bonding; FIG. 5 is a plan view of a portion of another thermal recording head; FIG. 6 is an enlarged sectional view taken along the Y-X line of FIG. 5; 7 is an enlarged sectional view taken along the Z-Z line in FIG. 5, FIGS. 8 and 9 are sectional views of other thermal recording heads, FIG. 10 is a schematic sectional view of the entire thermal transfer recording device, FIG. 11 is an enlarged view of the main part of FIG. 10, and FIG. 12 is a schematic sectional view of the entire thermal recording apparatus using thermal paper. In addition, in the symbols shown in the drawings, 1.21*s**110・Base 2・・・・・・・・・・ Heat generating part 3・・・・・・・・・・・・Resistor plate 4 .27...IC chip 5...Printed circuit board 8, R...
...Heating element layer 10, 12, 35 pot... At wiring 13.
16.36 ...At wire 2.0...Fist...--Written head 34.40 -e...At pad 35 B -e * * -e ---Ball-shaped part 3
7...... Meeting/Capillary D...
...It is a diode. Agent: Patent attorney Hiroshi Aisaka (1 other person) (27) C)

Claims (1)

【特許請求の範囲】[Claims] 1、発熱部と、この発熱部を駆動する集積回路部とを有
する感熱記録ヘッドにおいて、互いに電気的に接続され
るべき複数の個所がアルミニウムのポールボンディング
によって接続されていることを特徴とする感熱記録ヘッ
ド。
1. A thermal recording head having a heat generating section and an integrated circuit section for driving the heat generating section, characterized in that a plurality of points to be electrically connected to each other are connected by aluminum pole bonding. recording head.
JP58220023A 1983-11-21 1983-11-21 Thermal recording head Granted JPS60110471A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58220023A JPS60110471A (en) 1983-11-21 1983-11-21 Thermal recording head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58220023A JPS60110471A (en) 1983-11-21 1983-11-21 Thermal recording head

Publications (2)

Publication Number Publication Date
JPS60110471A true JPS60110471A (en) 1985-06-15
JPH055670B2 JPH055670B2 (en) 1993-01-22

Family

ID=16744719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58220023A Granted JPS60110471A (en) 1983-11-21 1983-11-21 Thermal recording head

Country Status (1)

Country Link
JP (1) JPS60110471A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS578177A (en) * 1980-06-17 1982-01-16 Matsushita Electric Ind Co Ltd Thermal head
JPS5764944A (en) * 1980-10-08 1982-04-20 Hitachi Ltd Forming and bonding methods for ball of metallic wire
JPS57116665A (en) * 1981-01-14 1982-07-20 Nippon Telegr & Teleph Corp <Ntt> Thermal head incorporated in driving circuit
JPS5819953A (en) * 1981-07-29 1983-02-05 Nec Corp Microprogram controlling system
JPS5827329A (en) * 1981-08-11 1983-02-18 Toshiba Corp Wire bonding method
JPS5832427A (en) * 1981-08-03 1983-02-25 テキサス・インスツルメンツ・インコ−ポレイテツド Device and method for forming aluminum ball for ball bonding

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS578177A (en) * 1980-06-17 1982-01-16 Matsushita Electric Ind Co Ltd Thermal head
JPS5764944A (en) * 1980-10-08 1982-04-20 Hitachi Ltd Forming and bonding methods for ball of metallic wire
JPS57116665A (en) * 1981-01-14 1982-07-20 Nippon Telegr & Teleph Corp <Ntt> Thermal head incorporated in driving circuit
JPS5819953A (en) * 1981-07-29 1983-02-05 Nec Corp Microprogram controlling system
JPS5832427A (en) * 1981-08-03 1983-02-25 テキサス・インスツルメンツ・インコ−ポレイテツド Device and method for forming aluminum ball for ball bonding
JPS5827329A (en) * 1981-08-11 1983-02-18 Toshiba Corp Wire bonding method

Also Published As

Publication number Publication date
JPH055670B2 (en) 1993-01-22

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