JPS5827329A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPS5827329A
JPS5827329A JP56124737A JP12473781A JPS5827329A JP S5827329 A JPS5827329 A JP S5827329A JP 56124737 A JP56124737 A JP 56124737A JP 12473781 A JP12473781 A JP 12473781A JP S5827329 A JPS5827329 A JP S5827329A
Authority
JP
Japan
Prior art keywords
wire
electrode
bonding
spark
bonding method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56124737A
Other languages
Japanese (ja)
Inventor
Hiromichi Sawatani
沢谷　博道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56124737A priority Critical patent/JPS5827329A/en
Publication of JPS5827329A publication Critical patent/JPS5827329A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable aluminum wire to perform ball bonding by producing a spark between one electrode formed by a wire within a capipllary and the other electrode, forming a molten ball at the end of said wire. CONSTITUTION:A spark is produced between the leading end 1a of the wire 1 and the electrode base 3 by applying a high voltage between the electrode base 3 and the wire 1. The leading end 1a of the wire 1 is then fused to form a molten ball. The capillary 2 holding the wire 1 is then moved to the lead frame 5, where the external conductive element of the frame 5 is wired to the electrode of the semiconductor pellet 6.

Description

【発明の詳細な説明】 不発に！Ａハワイヤーボンデイング方法に関するもので
、特にアルミワイヤーのポールボンディングに有利なワ
イヤーボンディング方法に圓するものでめる。[Detailed description of the invention] Misfire! This article relates to A-wire bonding methods, and is particularly concerned with wire bonding methods that are advantageous for aluminum wire pole bonding.

ポールホンディングは従来から金−のワイヤーボンティ
ングで実施されている。ポールボンディングはキャピラ
リー内に一過させた金縁先端に酸水素炎を当てて、金締
先ｊｌｌｌＫｉ１ｍボールを形成し、これをチップ上の
アルミ−に押し°りけて両者を接着し、さらに同様にし
て金縁の他端をリード−に接着させるものでるる。この
方法は殆んど酸化の虞れのない金線ワイヤーに実施され
ているに過ぎず、アルミワイヤーでは実施されていない
。それは、アルミワイヤーは酸化され易く、十分な不活
性雰囲気中においても酸水素炎を当てた場合には醸化な
阻止することができないからでるる。Pole bonding has traditionally been performed using gold wire bonding. For pole bonding, oxyhydrogen flame is applied to the tip of the gold edge that has passed inside the capillary to form a ball at the tip of the metal, which is then pushed onto the aluminum on the chip to bond them together, and then the same process is performed. The other end of the metal rim is then glued to the lead. This method has only been applied to gold wire, which has little risk of oxidation, and has not been applied to aluminum wire. This is because aluminum wire is easily oxidized and cannot be prevented from oxidizing when exposed to oxyhydrogen flame even in a sufficiently inert atmosphere.

本発明では、アルミワイヤーでもポールボンディングを
可能としたワイヤーボンディングを提供するもので、そ
の特徴とするところは、キャビツリー内に挿通させｔワ
イヤーを一方の電極とし、該ワイヤーと他の電極との間
にスパークを発生させ、それによってワイヤー先端に１
１１１１４ボールを形成させるようにしたことにある。The present invention provides wire bonding that enables pole bonding even with aluminum wire.The feature is that the T wire is inserted into the cavity tree and used as one electrode, and the wire is connected to the other electrode. A spark is generated between the ends of the wire, thereby causing a
The reason is that 11,114 balls are formed.

以下図面に示した実施例を参照しながら本発明を説明す
る。第１図は本発明の方法を実施する丸めの装置を概念
的に示したものである。図において、１はアルミまたは
シリコン入りアルミワイヤー、２はキャピラリ、３は電
極台、４はアルゴン、水素等の不活性ガスまたは環元ガ
ス供給器で参る。The present invention will be described below with reference to embodiments shown in the drawings. FIG. 1 conceptually shows a rounding device implementing the method of the invention. In the figure, 1 is aluminum or silicon-containing aluminum wire, 2 is a capillary, 3 is an electrode stand, and 4 is an inert gas such as argon or hydrogen or a ring gas supply device.

本発明は、このような装置における電極台３とワイヤー
１との間に高電圧を印加し、ワイヤー１の先へ１ａとｔ
極台３にスパークを発生させ、ワイヤー１の先端１ａを
溶融して、そこに′Ｉ＃融ボールを形成する。そして、
該ワイヤー１を保持するキャピラリ２をリードフレーム
５（第２図）まで移動させ、該リードフレーム５の外部
電極と牛４体ベレット６０！極とを結線する。In the present invention, a high voltage is applied between the electrode stand 3 and the wire 1 in such a device, and 1a and t are applied to the tip of the wire 1.
A spark is generated in the pole base 3 to melt the tip 1a of the wire 1 and form an 'I# molten ball there. and,
The capillary 2 holding the wire 1 is moved to the lead frame 5 (FIG. 2), and the external electrode of the lead frame 5 is connected to the four-cow pellet 60! Connect to the pole.

このように本発明では、ボンディングワイヤーの先端に
溶融ボールを形成させるに当り、酸水素炎を使用しない
ので、酸化される虞れがなく、したがってアルミまたは
シリコン入りアルミワイヤーをホンディングワイヤーと
したポールボンディングが可能となり、轡轡≠リードフ
レーム表面をニッケル全面メッキまたはニッケル部分メ
ッキとすることも可能でめり、極めて安価となる。In this way, in the present invention, an oxyhydrogen flame is not used to form a molten ball at the tip of the bonding wire, so there is no risk of oxidation, and therefore a bonding wire made of aluminum or silicon-containing aluminum wire can be used as a bonding wire. Bonding is possible, and the surface of the lead frame can be fully plated with nickel or partially plated with nickel, making it extremely inexpensive.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の方法な実施するための概念的な装置、
第２図は本発明方法の説明図である。 １・・・ボンディングワイヤー ２・・・キャピラリ ３・・・電極台 ４・・・不活性カス等の供給器 （７３１７）代理人　弁理士　　則　近　憲　佑（はか
１名）FIG. 1 shows a conceptual apparatus for carrying out the method of the invention;
FIG. 2 is an explanatory diagram of the method of the present invention. 1... Bonding wire 2... Capillary 3... Electrode stand 4... Supply device for inert scum, etc. (7317) Agent: Patent attorney Noriyuki Chika (1 person)

Claims (1)

【特許請求の範囲】[Claims] キャビツリー内に挿通させたワイヤーを一方の電極とし
、該ワイヤーと他に配設した電極間にスパークを発生さ
せ、咳スパークによってワイヤーに浴−ボール形成し、
それによってポールボンディングを行なわせることを特
徴とするワイヤーボンディング方法。A wire inserted into the cavity tree is used as one electrode, a spark is generated between the wire and another electrode arranged, and the cough spark forms a bath-ball on the wire,
A wire bonding method characterized by performing pole bonding thereby.
JP56124737A 1981-08-11 1981-08-11 Wire bonding method Pending JPS5827329A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56124737A JPS5827329A (en) 1981-08-11 1981-08-11 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56124737A JPS5827329A (en) 1981-08-11 1981-08-11 Wire bonding method

Publications (1)

Publication Number Publication Date
JPS5827329A true JPS5827329A (en) 1983-02-18

Family

ID=14892861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56124737A Pending JPS5827329A (en) 1981-08-11 1981-08-11 Wire bonding method

Country Status (1)

Country Link
JP (1) JPS5827329A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60110471A (en) * 1983-11-21 1985-06-15 Konishiroku Photo Ind Co Ltd Thermal recording head
US4754900A (en) * 1986-03-12 1988-07-05 Microelectronics And Computer Technology Corporation Method of and apparatus for dispensing a controlled amount of a liquid metal
US5152450A (en) * 1987-01-26 1992-10-06 Hitachi, Ltd. Wire-bonding method, wire-bonding apparatus,and semiconductor device produced by the wire-bonding method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60110471A (en) * 1983-11-21 1985-06-15 Konishiroku Photo Ind Co Ltd Thermal recording head
JPH055670B2 (en) * 1983-11-21 1993-01-22 Konishiroku Photo Ind
US4754900A (en) * 1986-03-12 1988-07-05 Microelectronics And Computer Technology Corporation Method of and apparatus for dispensing a controlled amount of a liquid metal
US5152450A (en) * 1987-01-26 1992-10-06 Hitachi, Ltd. Wire-bonding method, wire-bonding apparatus,and semiconductor device produced by the wire-bonding method

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