JPS60106217A - Surface wave filter - Google Patents
Surface wave filterInfo
- Publication number
- JPS60106217A JPS60106217A JP21435083A JP21435083A JPS60106217A JP S60106217 A JPS60106217 A JP S60106217A JP 21435083 A JP21435083 A JP 21435083A JP 21435083 A JP21435083 A JP 21435083A JP S60106217 A JPS60106217 A JP S60106217A
- Authority
- JP
- Japan
- Prior art keywords
- comb
- film
- dielectric material
- wave filter
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003989 dielectric material Substances 0.000 claims abstract description 14
- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 6
- 230000005284 excitation Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 210000001520 comb Anatomy 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はテレビジョン受像機やビデオテープレコーダの
VIP回路に用いられる表面波フィルタに関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a surface wave filter used in VIP circuits of television receivers and video tape recorders.
従来例の構成とその問題点
従来、この種の表面波フィルタは第1図、第2図に示す
ように、基板1としてのガラス上に正負1組よりなるく
し形電極2,3及び2J32Lを複数対配置しく図では
2対)、その上にZnOをスパッタリング蒸着して形成
した圧電膜4を配置し、 2さらにその上にアルミニウ
ムの導電膜5,5aを配置して弾性表面波励振用電極を
構成してなるものであった。Conventional Structure and Problems Conventionally, this type of surface acoustic wave filter, as shown in Figs. A piezoelectric film 4 formed by sputtering and depositing ZnO is placed on top of the piezoelectric film 4, and conductive films 5 and 5a made of aluminum are placed on top of the piezoelectric film 4 to form a surface acoustic wave excitation electrode. It was composed of
しかしながら、上記の構成ではくし形電極におけろくし
間隔が10数ミクロンであるのに対し、くし形電極と導
電膜との間隔が数ミクロンのため。However, in the above configuration, the comb spacing in the comb-shaped electrodes is about 10 microns, whereas the spacing between the comb-shaped electrodes and the conductive film is several microns.
くし形電極と導電膜間で静電気による短絡不良が発生す
る場合があった。また、表面波フィルタの入出力インピ
ーダンスは、くし形電極の形状及びそのくし間の表面抵
抗によって決定されるが、半導体であるZnO層の圧電
膜がその上に形成されることから入出力インピーダンス
が低く、しかも不安定であるため、回路とのマツチング
が悪いという問題点を有していた。There were cases in which short-circuit failures occurred between the comb-shaped electrodes and the conductive film due to static electricity. In addition, the input/output impedance of a surface wave filter is determined by the shape of the comb-shaped electrodes and the surface resistance between the combs, but since a piezoelectric film of a semiconductor ZnO layer is formed on it, the input/output impedance is determined by the shape of the comb-shaped electrodes and the surface resistance between the combs. Since it is low and unstable, it has the problem of poor matching with the circuit.
発明の目的
本発明は上記のような従来の欠点を除去し、静電気耐圧
が強く、品質の安定した表面波フィルタを提供しようと
するものである。OBJECTS OF THE INVENTION The present invention aims to eliminate the above-mentioned conventional drawbacks and provide a surface acoustic wave filter with strong static electricity resistance and stable quality.
発明の構成
この目的全達成するために本発明においては、基板上の
くし形電極の上に誘電物質膜を配置し、その上に圧電膜
を配置し、さらにその上に導電膜を配置した弾性表面波
励振用電極を具備してなるものである。Structure of the Invention In order to achieve all of these objects, the present invention utilizes an elastic material in which a dielectric material film is disposed on comb-shaped electrodes on a substrate, a piezoelectric film is disposed on top of the dielectric material film, and a conductive film is further disposed on top of the dielectric material film. It is equipped with an electrode for surface wave excitation.
実施例の説明
以下、本発明の一実施例について第3図と共に従来ψ1
」と同一箇所には同一番号を付して説明する。DESCRIPTION OF EMBODIMENTS Hereinafter, an embodiment of the present invention will be described with reference to FIG.
”, and the same parts are given the same numbers and explained.
第3図に示すように本発明では、基板1上に正負1組よ
りなる複数対のくし形電極2,3及び2a。As shown in FIG. 3, in the present invention, a plurality of pairs of comb-shaped electrodes 2, 3, and 2a, each consisting of positive and negative pairs, are provided on a substrate 1.
3aを配置し、その上に誘電物質膜6を配置し、さらに
その上に圧電膜4を設け、そしてその上に導電膜5,5
aを配置した弾性表面波励振用電極を具備して構成され
ている。3a, a dielectric film 6 is placed thereon, a piezoelectric film 4 is placed thereon, and conductive films 5, 5 are placed thereon.
The device is equipped with a surface acoustic wave excitation electrode arranged with a.
第4図は本発明において誘電物質膜6の厚みを変えた場
合の静電気耐圧の様子を示してお!ll1%静電気耐圧
は誘電物質膜6の厚みに比例して大きくなる傾向が見ら
れる。FIG. 4 shows the electrostatic breakdown voltage when the thickness of the dielectric material film 6 is changed in the present invention! It can be seen that the ll1% static electricity breakdown voltage tends to increase in proportion to the thickness of the dielectric material film 6.
発明の効果
以上のように構成された本発明によれば、くし形電極と
導電膜との間に絶縁体としての誘電物質膜が層となり介
在しているため、静電気耐圧が誘電物質膜の厚さにほぼ
比例して高くなる傾向が見られ、特に誘電物質膜の厚さ
を0・1μ以上とした時にはその効果が顕著で、従来の
100V前後の静電気耐圧を約200Vとすることがで
きる。また、くし形電極は絶縁体としての基板及び誘電
物質膜によって封入された状態となるので、入出力イン
ピーダンスが高くなり、しかも電気的に安定したものと
なり、回路とのマツチングがよいものとなる。Effects of the Invention According to the present invention configured as described above, since a layer of dielectric material as an insulator is interposed between the comb-shaped electrode and the conductive film, the electrostatic breakdown voltage depends on the thickness of the dielectric material film. There is a tendency for the voltage to increase almost in proportion to the voltage, and this effect is particularly noticeable when the thickness of the dielectric material film is 0.1 μm or more, and the electrostatic withstand voltage can be reduced from the conventional 100V to approximately 200V. Furthermore, since the comb-shaped electrodes are encapsulated by the substrate as an insulator and the dielectric film, the input/output impedance is high, and the electrodes are electrically stable and are well matched with the circuit.
第1図は従来例における表面波フィルタの上面より見た
構成図、第2図は第1図のA−B線の断面図、第3図は
本発明による表面波フィルタの一実施例を示す断面図、
第4図は本発明フィルタにおける誘電物質膜の厚さと静
電気耐圧との関係を示す図である。
1・・・・・・基板、2・3,2a・3a・・・・・・
くし形電極、4・・・・・・圧電膜、6・5a・・・・
・・導電膜、6・・・・・・誘電物質膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図
第4図
→誘量物質膜Fig. 1 is a configuration diagram of a conventional surface wave filter seen from above, Fig. 2 is a sectional view taken along line A-B in Fig. 1, and Fig. 3 shows an embodiment of a surface wave filter according to the present invention. cross section,
FIG. 4 is a diagram showing the relationship between the thickness of the dielectric material film and the electrostatic breakdown voltage in the filter of the present invention. 1... Board, 2, 3, 2a, 3a...
Comb-shaped electrode, 4...Piezoelectric film, 6, 5a...
...Conductive film, 6...Dielectric material film. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 4 → Dielectric material film
Claims (2)
置し、その上に誘電物質膜を配置し、さらにその上に圧
電膜を配置し、さらにその上に導電膜を配置した弾性表
面波励振用電極を具備し゛ たことを特徴とする表面波
フィルタ。(1) Elasticity in which multiple pairs of comb-shaped electrodes (positive and negative) are placed on a substrate, a dielectric film is placed on top of the pairs, a piezoelectric film is placed on top of that, and a conductive film is placed on top of that. A surface wave filter characterized by comprising a surface wave excitation electrode.
の範囲第1項記載の表面波フィルタ。(2) The surface acoustic wave filter according to claim 1, wherein the dielectric material film has a thickness of 0.1 μm or more.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21435083A JPS60106217A (en) | 1983-11-14 | 1983-11-14 | Surface wave filter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21435083A JPS60106217A (en) | 1983-11-14 | 1983-11-14 | Surface wave filter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60106217A true JPS60106217A (en) | 1985-06-11 |
Family
ID=16654310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21435083A Pending JPS60106217A (en) | 1983-11-14 | 1983-11-14 | Surface wave filter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60106217A (en) |
-
1983
- 1983-11-14 JP JP21435083A patent/JPS60106217A/en active Pending
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