JPS60106202A - Monolithic microwave integrated circuit - Google Patents

Abstract

PURPOSE:To reduce factors such as a discontinuous part which deteriorates high frequency characteristics by forming a semiconductor element and a transmission line on a semiconductor substrate in a plane, further >=1 dielectric layers and arranging a transmission line, and coupling those lines with a semiconductor element. CONSTITUTION:The input signal of an input port 31 is applied to a gate electrode 19 through a microstrip line 4, through hole 27, and coplanar line 25. The conversion from the line 4 to the line 25 is performed through the through hole 27, but the conversion is attained through the through hole having a diameter nearly as large as line width because the dielectric layers 2 and 3 are thin, and the characteristic deterioration of an FET13 due to the conversion is ignored, so that this circuit is applicable to a high frequency band. Further, electrodes 14, 19, and 21 of the FET13 are on the same plane and connected easily. Therefore, a short circuit need not be inserted between a semiconductor projection part and a dielectric layer to eliminate characteristic deterioration due to a discontinuous part.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to monolink microwave integrated circuits including semiconductor devices.

<Prior art> As shown in FIG. 1, a conventional monolithic microwave integrated circuit has dielectric layers 2 and 3 arranged side by side on a semiconductor substrate 1, and high-frequency signals are transmitted only on these dielectric layers 2 and 3. The ground conductors 6, 7 of these dielectric layers 2, 3 are connected to the ground conductors 8 of the semiconductor substrate 1 (opposite to the formation m1 of the dielectric layers 2, 3), in which the microstrip lines 4, 5 are arranged. A semiconductor element (a field effect transistor in FIG. 1) 13 is connected to the conductors 11 and 12 on the side surface, forming microstrip lines 5 and 6 between the dielectric layers 2 and 3. Therefore, between the dielectric layers 2 and 30, a protrusion 1a is formed where the semiconductor substrate 1 is as high as the thickness of the dielectric layers 2 and 3, and an electric field is generated on the protrusion 1a. An effect transistor 13 is formed. Field effect transistor (hereinafter FET)
A short circuit plate 15 is provided between the protrusion 1a of the semiconductor substrate 1 and the dielectric layer 2.3 in order to ground the source electrode 14 of the semiconductor substrate 1 (denoted as ) 13,
16 is inserted and connected to the short circuit plate 15° 16, and the protrusion 1
Ground conductor films 17 and 18 are formed on the surface of a to surround the FET 13 from both sides, and the ground conductor films 17 and 18
A source electrode 14 is connected to.

The gate electrode 19 of the FET 13 is connected to the microstrip line 4 on the input side and to the microstrip line 5 of the drain electrode (the electrode 21 is the output bone).

The connection portion between the microstrive line 4 and the gate electrode 19 constitutes a coplanar line 22 with the ground conductor films 17 and 18. Microstrip lines 23 and 24 connected to microstrip lines 4 and 5 form a matching stub.

In this way, in the conventional monolink microwave integrated circuit, the shorting plate 15 is placed between the semiconductor protrusion 1a and the dielectric layers 2 and 3.
, 16, which complicates the manufacturing process for manufacturing a monolink microwave integrated circuit and increases the cost of this circuit. Well, the human signal from microstrip line 4 is coplanar line 2.
However, the performance of FET 13, such as the efficiency as an amplifier, such as I and frequency, is There was also the problem that the characteristics deteriorated.

<Summary of the Invention> An object of the present invention is to provide a monolithic integrated circuit that is easy to manufacture.

According to this invention, a semiconductor element is formed on a semiconductor substrate, and a first transmission line is provided on the semiconductor substrate on the same surface as the element. Further, a dielectric layer is formed on the semiconductor substrate including the first transmission line, and a second transmission line coupled to the first transmission line is formed on the dielectric layer.

<Embodiment> FIG. 2 shows an example of a monolithic microwave integrated circuit according to the present invention, in which parts corresponding to those in FIG. 1 are given the same reference numerals. A # conductor element (FET in this example) 13 is formed on one surface of the semiconductor substrate 1, and a transmission line connected to the FET 13 is formed on the semiconductor substrate 1 on the same surface as that on which the FET 13 is formed. In this example, the ground conductor film 6 is formed on the formation surface of the FET 13 except on the FET 13,
The ground conductor film 6 is connected to the ground conductor 8 of the semiconductor substrate 1 through connection conductors 11 and 12 on both sides. Gate electrodes 19. on both sides of the FET 13. Coplanar lines 25 and 26, each having one end connected to the north electrode 21, are formed on the ground conductor film 6. Dielectric layers 2 and 3 are formed on the semiconductor substrate 1, including the coplanar lines 25 and 26, respectively, and microstrip lines 4 and 5 are formed on the dielectric layers 2 and 3, respectively. One end of the microstrive line 4.degree. 5 is connected to the other end of the coplanar lines 25, 26 through through poles 27, 28, respectively. Each other end of the microstrip lines 4 and 5 is connected to an input boat 31. They are connected to output ports 32, respectively.

The human input signal from the input capo) 31 is transmitted through the microstrip line 4. Through pole 27. It is applied to the gate electrode 19 via a coplanar line 25. Microstrip line 4
The conversion from a coplanar line 25 to a coplanar line 25 is carried out through a through hole 27, but since the J width of the dielectric layer 2°3 is helpful, the conversion can be made with a through hole having a diameter about the width of the line, and the discontinuous component can be made sufficiently small. can. Therefore, the characteristic deterioration of PET 13 due to this conversion section is lH! (The electrodes 14, 19, and 21 of the FET 13 are in the same plane as the coplanar lines 25 and 26. Connection is easily made.

The input signal amplified by the FET 13 is sent to the cononner line 26. Through hole 28. It is obtained from the output port 32 via the microstrip line 5.

In this manner, with this configuration, there is no need to insert a shorting plate between the semiconductor protrusion and the dielectric layer, and there is no characteristic deterioration due to the discontinuous portion. Also, the coplanar line 25°26 is FET 1
3 can be made at the same time in the manufacturing process,
It has the advantage that it can be manufactured at a cost comparable to that of a single FET element.

<Other Embodiments> FIG. 3 shows another embodiment of the present invention, in which parts corresponding to those in FIG. 2 are given the same reference numerals. In this example, a semiconductor element and a barrier diode (
(hereinafter referred to as SBD) 30 and 40 are formed. The slot line 33 is still on the ground conductor film 6, but the 5BD30, 40
One end is formed close to both names of SBD 30
, 40, slot lines 34, 35 extend in the opposite direction to the slot lines 33, and are formed on the ground conductor film 6. , 35 have the same length, and the other ends are connected by a slot line 36. The other end of the slot line 33 is connected to an open slot cavity 37. The conductor films on both sides of one end of the slot line 33 are extended and connected to the cathode 38° anode 39 of the SBDs 30 and 40, respectively, and the anodes 41 . The cathodes 42 are connected to the slot lines 34 and 3, respectively.
It is extended and connected to the inner conductor film of 5. Slots) Lx Road 33. A dielectric layer 2 is formed on the semiconductor substrate 1 including the slot cavity 37, and a dielectric layer 3 is formed on the semiconductor substrate 1 including the slot a-way 34, 35° 36. The microstrip lines 4 and 5 formed on the dielectric layers 2 and 3, respectively, when viewed from the direction perpendicular to the plate surfaces of the dielectric layers 2 and 3,
One end is perpendicular to the slot F mA paths 33 and 36, respectively, and is connected to the ground conductor film 6 through the through holes 27 and 28.
connected to. microstrip line 5) IJ
It is connected to a DC bias application terminal 45 through a prong conductor 43 .

The input signal from the input port 31 is transmitted to the microstrip line 4. The 0 slot empty $i37 which is converted and coupled to the slot line 33 through the through hole 27 provides an open condition,
The conversion efficiency from the microstrip line 4 to the slot line 33 is improved. SBD on slot line 33
Two 30 and 40 are connected in series, and SBD
By turning 30 and 40 ON and OFF, the input signal is propagated to the slot line 34- or 35. The SBD ON-OFF signal is applied from the terminal 45 through the spur conductor 43. SBD 30 is ON.

When 5BD40 is OFF, the signal component is sent to slot line 3.
5, is converted and coupled to the microstrip line 5 through the through hole 28, and an output is obtained from the boat 32. Conversely, when 5BD30 and 0FFXSBD40 are ON, an output is obtained via the slot line 34, and the signal phase is reversed from the previous case, resulting in a two-phase phase modulated wave.

In this way, semiconductor elements 30° 40,
By forming transmission lines 33, 34, and 35, further forming thin dielectric layers 2 and 3, and arranging transmission lines 4 and 5 on these dielectric layers 2 and 3, the 2
There is an advantage that a phase modulator can be configured. Furthermore, since there are no discontinuities that cause parasitic elements, there is an advantage that a phase modulator that can operate in a high frequency band can be realized. Furthermore, since the area in which the two SBDs 30 and 40 are formed can be made very narrow, there is an advantage that variations in semiconductor elements can be reduced and circuits with good reproducibility can be manufactured.

The dielectric layer formed on the semiconductor substrate may have a multilayer structure. Microstrip lines are also used as transmission lines formed on semiconductor substrates or dielectric layers.

A slot line, a coplanar line, or a combination of these lines may be used.

Effect> As explained above, according to the present invention, a semiconductor element and a transmission line are formed on a semiconductor substrate almost on the same plane, and one or more dielectric layers are further formed, and transmission lines are formed on this dielectric layer. Because the lines are arranged and these lines and semiconductor elements are combined to form a monolithic microwave integrated circuit, factors such as discontinuities that degrade the high frequency characteristics of the circuit can be reduced to a small extent. By applying the manufacturing process of semiconductor elements such as FETs, it is possible to reduce the cost of circuits, and it is also possible to significantly reduce the size and reproducibility of circuits that have previously had problems with miniaturization and reproducibility. This has the advantage of improving sexual performance.

[Brief explanation of the drawing]

FIG. 1 is a perspective view showing a conventional monolift microwave integrated circuit, and FIGS. 2 and 3 are perspective views showing one embodiment of the present invention, respectively. 1. Semiconductor substrate, 2, 3. Dielectric layer, 4, 5 microstrip line, 6. Ground 4) Body film, 13. Field effect transistor (FET), 14. Source electrode, 19
...Gate electrode, 21...Drain electrode 1.25.2
6... Coplanar line, 27, 28... Through hole, 31... Input port, 32... Output boat, 37. Slot cavity, 33-36... Slot line, 30, 40...・Schottky barrier diode (SB
D). Patent applicant: Representative of Nippon Telegraph and Telephone Public Corporation: Takuo Kusano 1 time 2 times

Claims (1)

[Claims] (1) A semiconductor element is formed on one surface of a semiconductor substrate, and a first transmission line connected to the semiconductor element is formed on the semiconductor substrate on substantially the same surface as the surface on which the semiconductor element is formed;
A monolink microwave in which a dielectric layer including the first transmission line is formed on the semiconductor substrate, and a second transmission line coupled to the first transmission line is formed on the electric shield layer. integrated circuit.