JPS60102641A - Vapor deposited selenium film improved in electrophotographic characteristics and its manufacture - Google Patents

Vapor deposited selenium film improved in electrophotographic characteristics and its manufacture

Info

Publication number
JPS60102641A
JPS60102641A JP20997683A JP20997683A JPS60102641A JP S60102641 A JPS60102641 A JP S60102641A JP 20997683 A JP20997683 A JP 20997683A JP 20997683 A JP20997683 A JP 20997683A JP S60102641 A JPS60102641 A JP S60102641A
Authority
JP
Japan
Prior art keywords
selenium
content
deposited film
vapor
chlorine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20997683A
Other languages
Japanese (ja)
Inventor
Osamu Oda
修 小田
Arata Onozuka
小野塚 新
Akio Koyama
小山 彰夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP20997683A priority Critical patent/JPS60102641A/en
Publication of JPS60102641A publication Critical patent/JPS60102641A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To enhance dark resistance characteristics of a photosensitive body made of Se by lowering the content of C in the Se source so as to reduce said content in the deposited film to a specified value or less in the vapor deposition process. CONSTITUTION:The Cl content in a Se deposited film can be lowered by using the source of Se reduced in said content in the vapor deposition process. As the method for reducing the Cl content in the Se source, the vacuum evaporation of Se under high vacuum, reduced pressure distillation of Se in an atm. of high- purity H2, sufficient washing of Se with pure water after production of Se reduced with SO2, etc. are used. As a result, deterioration of dark resistance characteristics of the Se photosensitive body can be prevented by lowering the Cl content of the Se vapor deposited film to <=3ppm.

Description

【発明の詳細な説明】 本発明は、電子写真感光体用セレン蒸着膜及びその製造
方法に関するものであり、特には純セレン蒸着膜中の塩
素含有量を3ppm以下に低減したことを特徴とするも
のである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a selenium vapor-deposited film for electrophotographic photoreceptors and a method for producing the same, and in particular is characterized in that the chlorine content in the pure selenium vapor-deposited film is reduced to 3 ppm or less. It is something.

電子写真法は物質の光導電性と静電気現象を利用した写
真法であり、幾つかの方式が確立されているが、そのう
ちセレン蒸着膜を電子写真感光体として使用し転写によ
って電子写真を得る方式をゼロックス法と呼んでいる。
Electrophotography is a photographic method that utilizes the photoconductivity of substances and electrostatic phenomena, and several methods have been established.Among them, one method uses a selenium vapor-deposited film as an electrophotographic photoreceptor and obtains an electrophotograph by transfer. is called the Xerox method.

ゼロックス法は下記の工程から成っている: (al帯電;金属基板上に暗抵抗の高い無定形セレンを
蒸着した感光板の表面を帯電させる。
The Xerox method consists of the following steps: (Al charging: The surface of a photosensitive plate on which amorphous selenium with high dark resistance is deposited on a metal substrate is charged.

(bl露光(焼付);光像で露光すると光の照射を受け
た部分のセレンは電気抵抗が下がり、表面の帯電電荷は
金属基板へ逃げ、感光板上の残存電荷密度は露光量に応
じて差を生じ、セレン面上に原画と同形の静電潜像がで
きる。
(BL exposure (printing): When exposed with a light image, the electrical resistance of selenium in the irradiated area decreases, the surface charge escapes to the metal substrate, and the residual charge density on the photosensitive plate changes depending on the amount of exposure. A difference occurs, and an electrostatic latent image with the same shape as the original image is formed on the selenium surface.

(C)現像;上記感光板表面に炭素微粉を樹脂で被覆し
たトナーとガラス小球からなるキャリアの混合粉をふり
かけることによって潜像部にトナーが付着し、潜像は可
視像となる。
(C) Development: By sprinkling the surface of the photosensitive plate with a mixed powder of a toner made of fine carbon powder coated with a resin and a carrier consisting of glass beads, the toner adheres to the latent image area, and the latent image becomes a visible image.

fdl転写;現像を終えた上記感光板表面に遍当な紙を
載せ、背面からコロナ放電を行なわせると、感光板上の
トナーは紙に吸引され、トナー粉像は紙に転写される。
fdl transfer: When a sheet of paper is evenly placed on the surface of the photosensitive plate after development and a corona discharge is caused from the back side, the toner on the photosensitive plate is attracted to the paper and the toner powder image is transferred to the paper.

tel定着;転写を終えたら紙をはがし、赤外線ヒータ
で加熱してトナーの樹脂を紙に溶着させる。
tel fixing: After the transfer is completed, the paper is peeled off and heated with an infrared heater to fuse the toner resin to the paper.

以上の各工程を実施することにより原画の複写画像(電
子写真)が得られるが、複写された像の鮮明さ或いは原
画に対する再現性は感光体セレンの性能に大きく依存す
る。感光体の性能の判定には、(イ)一定出力のコロナ
放電により与えられる帯電電荷量を表すコロナ帯電特性
、(ロ)コロナ放電により帯電された感光体を暗所に保
持する間に失われる荷電量と関係する暗減衰特性、P→
暗中で保持された荷電量が露光によって消失する速度を
表す帯電圧露光減衰特性、に)感光体を露光させた後零
まで消失せずに残る電位を表す残留電位等が考慮される
が、なかでも暗減衰特性は電位の暗減衰が大きい場合に
は感光体としての使用が不可能となり、改善を強くめら
れるものの一つである。
By carrying out each of the above steps, a copied image (electrophotography) of the original image is obtained, but the sharpness of the copied image or the reproducibility with respect to the original image largely depends on the performance of the selenium photoreceptor. To judge the performance of a photoreceptor, (a) corona charging characteristics that represent the amount of charge given by corona discharge with a constant output, and (b) the amount of charge lost while the photoreceptor charged by corona discharge is kept in a dark place. Dark decay characteristic related to charge amount, P→
The charge voltage exposure attenuation characteristic, which shows the speed at which the amount of charge held in the dark disappears due to exposure to light, and the residual potential, which shows the potential that remains without disappearing to zero after exposing the photoreceptor to light, are taken into consideration. However, if the dark decay of the potential is large, it becomes impossible to use it as a photoreceptor, so it is one of the characteristics that needs to be improved.

複写機用感光体としてのセレンは、特定の不純物がごく
微量存在してもその特性に顕著な影響を受ける可能性が
ある。−例として、Fe含有量が2ppmを越えると、
蓄積残留電位が増加し、ゴースト現象が生じるため、F
e含有量は2m)pm以下にすべきであるとの報告が為
されている(特開昭5F)−67752号)。
When selenium is used as a photoreceptor for copying machines, even the presence of a very small amount of certain impurities can significantly affect its properties. - For example, if the Fe content exceeds 2 ppm,
F
It has been reported that the e content should be 2m)pm or less (Japanese Patent Application Laid-open No. 5F-67752).

ところで、セレンの電子写真特性を改善する方策として
、ハロゲン(塩素、臭素、ヨウ素)を添加することが有
効であると定説化されており、幾つかの文献や特許公開
公報にセレン系合金にノ・ロゲンを添加することにより
特性の向上に効果的であるとの報告が為されている。(
例えば、特開昭57−53753.55−124569
.56−149046等多数)。
By the way, it is well-established that adding halogens (chlorine, bromine, iodine) is effective as a measure to improve the electrophotographic properties of selenium, and several documents and patent publications state that addition of halogens to selenium-based alloys is effective. - It has been reported that adding rogens is effective in improving properties. (
For example, JP 57-53753.55-124569
.. 56-149046 and many others).

しかしながら、これらは純セレンを対象として微量の塩
素の影響について研究したものでなく、本発明者等が純
セレンについての塩素の影響な調べた結果、これまでの
定説とは逆に塩素を含有するセレンでは特性、特に暗減
衰特性が著しく悪化することが判明した。セレンの電子
写真特性の向上にとってハロゲンの添加が有効であると
信じてきた斯界での一般的概念と反して、これは全く予
想外のことであった。
However, these studies did not investigate the effects of trace amounts of chlorine on pure selenium, and as a result of the inventors' investigation into the effects of chlorine on pure selenium, they found that it contains chlorine, contrary to the conventional wisdom. It was found that selenium significantly deteriorates the properties, especially the dark decay properties. This was completely unexpected, contrary to the general concept in the field that the addition of halogen was believed to be effective in improving the electrophotographic properties of selenium.

本発明はこうした予想外の発見に基くものであり、セレ
ン中の塩素含有量を極力低減せしめ、セレンの電子写真
特性の改善を計らんとするものである。本発明者等の精
緻な実験検討の結果、セレン中の塩素含有量は5ppm
以下にすべきことがわかった。セレン蒸着膜の暗減衰特
性は塩素添加量が増加するにつれ増大し、3ppmを越
えると表面電位は20夕(以上減衰する。
The present invention is based on this unexpected discovery, and aims to improve the electrophotographic properties of selenium by reducing the chlorine content in selenium as much as possible. As a result of detailed experimental studies by the inventors, the chlorine content in selenium was 5 ppm.
I found out what to do below. The dark decay characteristic of the selenium deposited film increases as the amount of chlorine added increases, and when the amount exceeds 3 ppm, the surface potential decays by more than 20 min.

斯くして、本発明は、3ppm以下の塩素含有量を有す
る電子写真感光体用セレン蒸着膜を提供する。また、本
発明は、電子写真感光体用のセレン蒸着膜な製造するに
際し、原料セレン中の塩素含有量を蒸着膜中の塩素含有
量が3ppm以下になるよう低減し、該原料セレンを真
空蒸着することな特徴とする電子写真感光体用セレン蒸
着膜の製造方法をも提供する。
Thus, the present invention provides a selenium deposited film for electrophotographic photoreceptors having a chlorine content of 3 ppm or less. Furthermore, when producing a selenium vapor deposited film for an electrophotographic photoreceptor, the chlorine content in the raw material selenium is reduced to 3 ppm or less, and the raw material selenium is vacuum vapor deposited. The present invention also provides a method for producing a selenium vapor deposited film for an electrophotographic photoreceptor, which has unique characteristics.

以下、本発明について具体的に説明する。The present invention will be specifically explained below.

前述した通り、通説的には塩素を添加することにより残
留電位を減少させることができ、特性向上が計かれると
云われていたが、本発明者等が高純度化したセレン(重
金属成分は検出下限以下、硫黄(0,21)I)m、塩
素(0,04ppm、臭素<o、oo6ppm、ヨウ素
(0,02ppm)を用いて塩素添加を行った実験結果
では、前述した通りの特性劣化を起こすことが判明した
As mentioned above, it is generally believed that the residual potential can be reduced by adding chlorine and the characteristics can be improved. Experimental results in which chlorine was added using sulfur (0,21)I)m, chlorine (0,04 ppm, bromine <o, oo6 ppm, and iodine (0,02 ppm) below the lower limit showed that the characteristics deteriorated as described above. It turned out to be happening.

添付グラフは、後に実験例で示す実験過程を用いて塩素
添加量と2秒経過後の表面電位との関係を得たものであ
る。グラフから明らかなように、2秒後の表面電位の暗
減衰特性を考察すると、(1)塩素含有量が0.lpp
m以下ではほとんど電位の減衰が認められず、(2)塩
素含有量が0.1〜3ppmであれば電位は約20%以
下で減衰し、そして(3)塩素含有量が3ppmを超え
ると電位の暗減衰が著しいことが判る。通常の複写機用
感光体としては、電位の暗減衰が大きい場合には感光体
としての使用が不可能となり、従って塩素含有ゴーを3
ppm以下に低減しておくことがセレン感光体にとって
非常に重要である。
The attached graph shows the relationship between the amount of chlorine added and the surface potential after 2 seconds, using the experimental process shown later in the experimental example. As is clear from the graph, considering the dark decay characteristics of the surface potential after 2 seconds, (1) the chlorine content is 0. lpp
(2) If the chlorine content is 0.1 to 3 ppm, the potential will attenuate by about 20% or less, and (3) If the chlorine content exceeds 3 ppm, the potential will decrease. It can be seen that the dark decay of is significant. If the dark decay of the potential is large, it becomes impossible to use a photoconductor for a normal copying machine, so chlorine-containing go
It is very important for selenium photoreceptors to reduce the content to ppm or less.

セレン蒸着膜中の塩素含有量の低減は、セレン含有量の
低減された原料セレンを用いて真空蒸着を行うことによ
り達成され、原料セレン中の塩素含有量の低減法として
は、(11高真空下におけるセレンの真空蒸留、(2)
高純度水嵩中での減圧蒸留、(3)SO2還元セレン製
造後のセレンの純水による充分なる洗浄等の方法が有効
である。蒸着膜セレンを真空蒸着する際の条件は特に限
定されるものではなく、通常実施されている条件で十分
である。
Reduction of the chlorine content in the selenium vapor-deposited film is achieved by performing vacuum evaporation using raw material selenium with reduced selenium content. Vacuum distillation of selenium under (2)
Methods such as distillation under reduced pressure in a volume of high-purity water and (3) thorough washing of selenium with pure water after producing SO2-reduced selenium are effective. The conditions for vacuum-depositing the vapor-deposited selenium film are not particularly limited, and commonly used conditions are sufficient.

例えば、セレン蒸着膜を支持する基板としてはアルミニ
ウム、鋼等の金属あるいは金属化された紙あるいはプラ
スチック等の材料が用いられる。
For example, a metal such as aluminum or steel, or a material such as metallized paper or plastic is used as the substrate that supports the selenium-deposited film.

また、蒸着源温度は250°C〜350℃、基板温度は
55℃〜70℃、真空度はIG−”Torr〜1O−6
Torr、蒸着時間は60分間〜130分間なる範囲で
適宜、好適な条件を選択して実施しう実験例 セレンの電子写真特性に及ぼす塩素の影響を明らかにす
る為に、下表に示す精製した高純度セレンにSeCla
を一定量添加してアンプル中に真空封入してドーピング
し、特性評価を行った。
In addition, the evaporation source temperature is 250°C to 350°C, the substrate temperature is 55°C to 70°C, and the degree of vacuum is IG-”Torr to 1O-6.
Torr, vapor deposition time is from 60 minutes to 130 minutes, and the experiment is carried out by selecting appropriate conditions.Experimental ExampleIn order to clarify the influence of chlorine on the electrophotographic properties of selenium, purified selenium as shown in the table below was used. SeCla for high purity selenium
A certain amount of was added and vacuum sealed in an ampoule for doping, and the characteristics were evaluated.

上記混合物を抵抗加熱により55aX55■の鏡面仕上
げアルミニウム基板上へ蒸着した。
The above mixture was deposited onto a 55a x 55mm mirror finished aluminum substrate by resistance heating.

蒸着条件は次のとおりである。The deposition conditions are as follows.

蒸着源温度270℃ 基板温度60℃ 真空度2X10’[”orr 蒸着時間60分間 以上の条件によりアルミニウム基板上へ形成したセレン
蒸着膜の厚さはいずれも50μmであった。
The thickness of the selenium vapor deposited film formed on the aluminum substrate under the following conditions: evaporation source temperature: 270° C., substrate temperature: 60° C., vacuum degree: 2×10′[”orr, evaporation time: 60 minutes or more] was 50 μm.

こうして得られたセレン蒸着膜について静電試験装置に
より下記条件にてその光電特性(表面電位)を調べた。
The photoelectric properties (surface potential) of the selenium vapor-deposited film thus obtained were examined using an electrostatic tester under the following conditions.

コロナ放電電圧5KV 暗減衰時間2秒間 除電照度及び時間20000ルクス、2秒間繰り返し数
5θ回 以上の測定結果を表わしたのが添伺グラフである。
The attached graph shows the measurement results of a corona discharge voltage of 5 KV, a dark decay time of 2 seconds, a static elimination illuminance of 20,000 lux, and a repetition rate of 5θ times or more for 2 seconds.

前記の通り、塩素添加量、が3ppmを越えると表面電
位は2秒後に20X以上低下することが判る。
As mentioned above, it can be seen that when the amount of chlorine added exceeds 3 ppm, the surface potential decreases by more than 20X after 2 seconds.

以上説明したように、本発明によれば、従来の通念とは
逆に、セレン蒸着膜中の塩素含有量を低減することKよ
り特にその暗減衰特性が向上されたものである。塩素含
有量を低減することは、もし塩素が添加されるならセレ
ン中にトラップが形成されるため特性の劣化を起こしや
すいという事実から、感光体としてのセレン特性一般の
安定化につながる点でも好都合である。
As explained above, according to the present invention, contrary to the conventional wisdom, the dark decay characteristics are particularly improved by reducing the chlorine content in the selenium-deposited film. Reducing the chlorine content is also advantageous in that it leads to stabilization of the general properties of selenium as a photoreceptor, since if chlorine is added, traps are formed in the selenium and the properties tend to deteriorate. It is.

【図面の簡単な説明】[Brief explanation of drawings]

図面は暗減衰特性に及ぼす塩素添加量の影響を示すグラ
フである。
The figure is a graph showing the influence of the amount of chlorine added on dark decay characteristics.

Claims (1)

【特許請求の範囲】 1)3ppm以下の塩素含有量を有する電子写真感光体
用セレン蒸着膜。 2)電子写真感光体用のセレン蒸着膜を製造するに際し
、原料セレン中の塩素含有量を蒸着膜中の塩素含有量が
3ppm以下になるよう低減し、該原料セレンな真空蒸
着することを特徴とする電子写真感光体用セレン蒸着膜
の製造方法。 3)原料セレン中の塩素含有量の低減が(イ)高真空下
におけるセレンの真空蒸留、(ロ)高純度水素中での減
圧蒸留或いは(/−1so2遺元セレン製造後のセレン
の純水による充分なる洗浄により実施される特許請求の
範囲第2項記載の方法。
[Claims] 1) A selenium vapor-deposited film for an electrophotographic photoreceptor having a chlorine content of 3 ppm or less. 2) When producing a selenium vapor-deposited film for an electrophotographic photoreceptor, the chlorine content in the raw material selenium is reduced to 3 ppm or less, and the raw material selenium is vacuum-deposited. A method for producing a selenium vapor deposited film for an electrophotographic photoreceptor. 3) The reduction of the chlorine content in the raw material selenium can be achieved by (a) vacuum distillation of selenium under high vacuum, (b) vacuum distillation in high purity hydrogen, or (/-1so2 selenium pure water after producing the original selenium). The method according to claim 2, which is carried out by thorough washing with.
JP20997683A 1983-11-10 1983-11-10 Vapor deposited selenium film improved in electrophotographic characteristics and its manufacture Pending JPS60102641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20997683A JPS60102641A (en) 1983-11-10 1983-11-10 Vapor deposited selenium film improved in electrophotographic characteristics and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20997683A JPS60102641A (en) 1983-11-10 1983-11-10 Vapor deposited selenium film improved in electrophotographic characteristics and its manufacture

Publications (1)

Publication Number Publication Date
JPS60102641A true JPS60102641A (en) 1985-06-06

Family

ID=16581795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20997683A Pending JPS60102641A (en) 1983-11-10 1983-11-10 Vapor deposited selenium film improved in electrophotographic characteristics and its manufacture

Country Status (1)

Country Link
JP (1) JPS60102641A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007263679A (en) * 2006-03-28 2007-10-11 Yokogawa Electric Corp Vibration detection device, pressure detection device, vibration detection method, and pressure detection method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007263679A (en) * 2006-03-28 2007-10-11 Yokogawa Electric Corp Vibration detection device, pressure detection device, vibration detection method, and pressure detection method

Similar Documents

Publication Publication Date Title
US4286035A (en) Halogen doped selenium-tellurium alloy electrophotographic photoconductor
JPS5913021B2 (en) Composite photoreceptor material
US3498835A (en) Method for making xerographic plates
JPS60102641A (en) Vapor deposited selenium film improved in electrophotographic characteristics and its manufacture
US4585621A (en) Vapor-deposited film of selenium or selenium alloy for electrophotography
US4370399A (en) Equisensitive ambipolar indium doped selenium containing electrophotographic materials, plates and method
US4615964A (en) Vapor-deposited film of selenium as photoreceptor for electrophotography and process for producing the same
JPS59126539A (en) Selenium vapor-deposited film used for electrophotographic sensitive body and its manufacture
JPS60252353A (en) Electrophotographic sensitive senlenium and selenium photosensitive film and its manufacture
US3816116A (en) N-type photosensitive member for electrophotography
JPS59223436A (en) Photosensitive body of selenium-tellurium alloy
JPS61132956A (en) Electrophotographic sensitive body
JPS60102644A (en) Vapor deposited selenium film for use in electrophotographic sensitive body and its manufacture
JPH0683091A (en) Electrophotographic sensitive body and manufacture thereof
JPS61156133A (en) Electrophotographic sensitive body
JPS61156135A (en) Electrophotographic sensitive body
JPS58150960A (en) Photoconductive material
JPS60252357A (en) Electrophotographic sensitive selenium and selenium photosensitive film and its manufacture
JPS60252358A (en) Electrophotographic sensitive selenium and selenium photosensitive film and its manufacture
JPH0239787B2 (en)
JPS6064357A (en) Electrophotographic sensitive body made of selenium
JPS58187942A (en) Photoconductive member
JPS58134643A (en) Photoconductive member
JPS58137844A (en) Photoconductive material
JPS58171041A (en) Photoconductive material