JPS60101986A - 半導体レ−ザ装置 - Google Patents

半導体レ−ザ装置

Info

Publication number
JPS60101986A
JPS60101986A JP58208233A JP20823383A JPS60101986A JP S60101986 A JPS60101986 A JP S60101986A JP 58208233 A JP58208233 A JP 58208233A JP 20823383 A JP20823383 A JP 20823383A JP S60101986 A JPS60101986 A JP S60101986A
Authority
JP
Japan
Prior art keywords
semiconductor laser
type
laser device
light
ridges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58208233A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0430759B2 (enExample
Inventor
Yuichi Shimizu
裕一 清水
Takeshi Hamada
健 浜田
Masahiro Kume
雅博 粂
Kunio Ito
国雄 伊藤
Masaru Wada
優 和田
Fumiko Tajiri
田尻　文子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58208233A priority Critical patent/JPS60101986A/ja
Publication of JPS60101986A publication Critical patent/JPS60101986A/ja
Publication of JPH0430759B2 publication Critical patent/JPH0430759B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP58208233A 1983-11-08 1983-11-08 半導体レ−ザ装置 Granted JPS60101986A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58208233A JPS60101986A (ja) 1983-11-08 1983-11-08 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58208233A JPS60101986A (ja) 1983-11-08 1983-11-08 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS60101986A true JPS60101986A (ja) 1985-06-06
JPH0430759B2 JPH0430759B2 (enExample) 1992-05-22

Family

ID=16552853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58208233A Granted JPS60101986A (ja) 1983-11-08 1983-11-08 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS60101986A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254990A (ja) * 1985-09-04 1987-03-10 Hitachi Ltd 半導体レ−ザ素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254990A (ja) * 1985-09-04 1987-03-10 Hitachi Ltd 半導体レ−ザ素子

Also Published As

Publication number Publication date
JPH0430759B2 (enExample) 1992-05-22

Similar Documents

Publication Publication Date Title
CA1298645C (en) Super-luminescent diode
JPS59144193A (ja) 半導体レ−ザ
CA1295404C (en) Super-luminescent diode
US4792200A (en) Array of coupled optical waveguides
US5396511A (en) Semiconductor laser apparatus with curved waveguide
JPS60101986A (ja) 半導体レ−ザ装置
US4764937A (en) Semiconductor laser array device
US4764936A (en) Semiconductor laser array device
JP2846668B2 (ja) ブロードエリアレーザ
US4122410A (en) Lateral mode control in semiconductor lasers
JPH0223038B2 (enExample)
JPH0430760B2 (enExample)
JP2526934B2 (ja) 光増幅器
JPH0278291A (ja) 半導体レーザ素子
JPH0661583A (ja) 半導体レーザ
JPS6017984A (ja) 半導体レ−ザ装置
JPS60130185A (ja) 半導体レ−ザ装置
JPS60130186A (ja) 半導体レ−ザ装置
JPH05206567A (ja) 半導体レーザ
JPH01140787A (ja) 半導体レーザ素子
JPS59152686A (ja) 半導体レ−ザ素子
JPS62281389A (ja) 半導体レ−ザ
JPS6392076A (ja) 半導体レ−ザ
JPH02178987A (ja) 半導体レーザ素子
JPS63288086A (ja) 半導体レ−ザ