JPS60100673A - Formation of wiring pattern by masked vapor deposition - Google Patents

Formation of wiring pattern by masked vapor deposition

Info

Publication number
JPS60100673A
JPS60100673A JP20695383A JP20695383A JPS60100673A JP S60100673 A JPS60100673 A JP S60100673A JP 20695383 A JP20695383 A JP 20695383A JP 20695383 A JP20695383 A JP 20695383A JP S60100673 A JPS60100673 A JP S60100673A
Authority
JP
Japan
Prior art keywords
wiring pattern
vapor deposition
substrate
pattern
mesh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20695383A
Other languages
Japanese (ja)
Other versions
JPS6338421B2 (en
Inventor
Takashi Kondo
隆 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP20695383A priority Critical patent/JPS60100673A/en
Publication of JPS60100673A publication Critical patent/JPS60100673A/en
Publication of JPS6338421B2 publication Critical patent/JPS6338421B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C21/00Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
    • B05C21/005Masking devices
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143Masks therefor

Abstract

PURPOSE:To enable formation of a pattern having excellent accuracy in the stage of forming a wiring pattern on the surface of a substrate by masked vapor deposition by using a magnetic material to constitute either of a mesh for forming a metallic mask or a foil layer on which the wiring pattern is formed. CONSTITUTION:A metallic mask 1 consisting of a mesh 2 and a foil layer 3 formed of Ni or stainless steel on which a wiring pattern is formed is adhered to a substrate 4 for vapor deposition in a vacuum chamber 6 in the stage of forming the wiring pattern by masked vapor deposition on said substrate. At least one of the mesh 2 or the foil layer 3 is constituted of a magnetic material and is strongly attracted to the substrate 4 by a magnet 5. Since a material 8 to be deposited by evaporation is deposited in this state to the substrate, the material 8 is prevented from spreading to the spacing between the layer 3 and the material 4 and the pattern having high accuracy is formed.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、マスク蒸着による配線パターンの形成方法
に関し、詳しくは特定のメタルマスクを用いて所要の基
板上に、所望の薄膜パターンゲ形成するようにしたマス
ク蒸着による配線パターンの形成方法に関するものであ
る。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a method for forming a wiring pattern by mask vapor deposition, and more specifically, a method for forming a desired thin film pattern on a desired substrate using a specific metal mask. The present invention relates to a method of forming a wiring pattern by mask vapor deposition.

〔従来技術〕[Prior art]

従来、この種の薄膜パターンの形成方法としては、所定
の回路1f!−崩するパターンケ得るために、複数枚の
マスクを重ねる必要かあり、マスクの枚数が多数必要で
あったり、重ね合せ精度が悪(、あまり精度の高いパタ
ーンを形成することができなかった(@開昭58−67
044号公報参照)。
Conventionally, as a method for forming this type of thin film pattern, a predetermined circuit 1f! - In order to obtain a broken pattern, it was necessary to overlap multiple masks, which required a large number of masks, and the overlay accuracy was poor (or it was not possible to form a highly accurate pattern (@ Kaisho 58-67
(See Publication No. 044).

〔発明の概要〕[Summary of the invention]

この発明は、上記のような従来のものの欠点を除去する
ためになされたもので、基体部になるメツシュ部にメッ
キ等の手段でパターンを形成した箔/1′=lケ一体構
造で作ったメタルマスクにすることにより、比較的複雑
な配線パターンン一枚のマスクで蒸着し、配線パターン
ン形成することを目的としている。
This invention was made in order to eliminate the drawbacks of the conventional products as described above, and it is made of a foil/1'=l integral structure in which a pattern is formed on the mesh part, which becomes the base part, by means such as plating. By using a metal mask, the purpose is to vapor-deposit and form a relatively complicated wiring pattern using a single mask.

〔発明の実施例〕[Embodiments of the invention]

餓1図は、この発明の一実施例ケ示す断面図で、1はメ
タルマスクを示し、メツシュ2と配線パターンが形成さ
れた箔層2からなっている。4は被蒸着物で、メタルマ
スク1に設けられた配線パターンが正確にバターニング
されるようにメタルマスク1に密着して載架されて〜・
る。
Figure 1 is a cross-sectional view showing one embodiment of the present invention, and 1 indicates a metal mask, which is composed of a mesh 2 and a foil layer 2 on which a wiring pattern is formed. Reference numeral 4 denotes an object to be deposited, which is mounted in close contact with the metal mask 1 so that the wiring pattern provided on the metal mask 1 can be patterned accurately.
Ru.

ここで、メタルマスク1はステンレス製のメツシュや銅
製のメツシュ上に電鋳等によりニッケル箔を付与し、配
線パターンを形成する。配線パターンは電鋳と同時に形
成することもできるし、全面電鋳路ン付与してから、写
真製版等の手段でパターニングすることも可能である。
Here, for the metal mask 1, a wiring pattern is formed by applying nickel foil on a stainless steel mesh or a copper mesh by electroforming or the like. The wiring pattern can be formed at the same time as electroforming, or it can be patterned by means such as photolithography after electroforming is applied to the entire surface.

前記メタルマスク1のメツシュ21 または配線パター
ンが形成された箔層3の少な(ともいずれか一方か磁性
体であることがこの発明の一つの要件で、後述するマグ
ネツ)[よる吸引力による被蒸着物4との密着を確保し
蒸着物8が箔層3と被蒸着物4の間に廻り込むのビ防止
するのに重要である。
The mesh 21 of the metal mask 1 or the foil layer 3 on which the wiring pattern is formed is small (one of the requirements of this invention is that either one is made of a magnetic material, which will be described later). This is important to ensure close contact with the object 4 and to prevent the vapor deposited material 8 from getting around between the foil layer 3 and the object 4 to be vapor deposited.

第2図は第1図の部分平面図ン示し、31は前記箔層3
に形成されたパターンの一部を示し、メンシュ2を貫通
して飛来した蒸着物8が被蒸着物4に選択的に付着する
ために箔層3の所定部分の箔が除去されているあき部分
を示す。
FIG. 2 shows a partial plan view of FIG. 1, and 31 is the foil layer 3.
This shows a part of the pattern formed in the above, and shows an open area where a predetermined portion of the foil of the foil layer 3 is removed in order for the vapor deposit 8 that has passed through the mensch 2 to selectively adhere to the object 4 to be vapor deposited. shows.

ここで、メツシュとパターンは望ましくは斜交している
ことであり、出来ろ限り回路パターンを設計する段階で
配慮することで、正確かつ精密なパターンケ被蒸溜物4
に蒸着することができる。
Here, it is preferable that the mesh and the pattern intersect diagonally, and by taking this into account as much as possible at the stage of designing the circuit pattern, it is possible to create an accurate and precise pattern.
can be vapor-deposited.

もちろん、メツシュ2と平行したパターンがあっても何
ら支障はない。
Of course, there is no problem even if there is a pattern parallel to mesh 2.

第3図は実際に蒸着にて、配線パターンを形成している
ところを模式的に示したもので、6は蒸着チャンバ、5
はマグネット、Tはホルダ、8は蒸着物を示す。
Fig. 3 schematically shows how a wiring pattern is actually formed by vapor deposition, and 6 is a vapor deposition chamber;
indicates a magnet, T indicates a holder, and 8 indicates a deposit.

ここでは、マグネット5はメタルマスク1が均等に被蒸
着物4に密着できるように、複数個の小片を所定位置に
配しているが、ソート状のマグネットやあるいは適当な
電磁石にすることは可能である。また、マグネットの強
さは被蒸着物4を貫通して少な(ともメタルマスク1ケ
吸引し、被蒸着物4に密着する程度でよい。Tは前記被
蒸着物4等を保持し、通常は自公転が可能な構造を有す
るホルダで、複数個の被蒸着物4を保持できる。
Here, the magnet 5 has a plurality of small pieces arranged at predetermined positions so that the metal mask 1 can evenly adhere to the object to be deposited 4, but it is also possible to use a sorted magnet or a suitable electromagnet. It is. In addition, the strength of the magnet is small enough to penetrate the object 4 to be evaporated (it is enough to attract one metal mask and stick closely to the object 4 to be evaporated. T holds the object 4, etc. to be evaporated, and usually The holder has a structure that allows rotation and revolution, and can hold a plurality of objects 4 to be deposited.

8は電子ビーム等の加熱源(図示せず)により加熱さね
、蒸発された微量子からなる蒸着物を示し、適当な速度
で飛びメタルマスク1のパターンを貫通して被蒸着物4
に蒸着され、所望の配線パターンが形成される。
Reference numeral 8 indicates a deposit made of minute particles heated and evaporated by a heating source such as an electron beam (not shown), which flies at an appropriate speed and penetrates the pattern of the metal mask 1 to form the deposited material 4.
A desired wiring pattern is formed.

なお、蒸着物8は被蒸着物4との密着度等を確保するた
め、クロム、銅等多層金属が望ましい。
Note that the deposit 8 is preferably made of a multilayer metal such as chromium or copper in order to ensure the degree of adhesion with the deposit 4.

また、配線パターンが形成された箔層3はメツシュ2に
より影になる部分を防ぐために必要な間l!Iを得るた
め少々(とも0.5μm以上の厚さが必要である。なお
、上限については特に制限を設けろものではないが、メ
タルマスク1の製造上等からの制約がある。
Further, the foil layer 3 on which the wiring pattern is formed is kept for a required period of time l! to prevent the mesh 2 from shading the area. In order to obtain I, a thickness of 0.5 μm or more is required. Although there is no particular limit to the upper limit, there are restrictions from the manufacturing of the metal mask 1 and the like.

なお、上記実施例ではメタルマスク1に金属素地のまま
適用したが、洗浄効果を向上させるために金等のメッキ
をコートすることが有効である。
In the above embodiment, the metal mask 1 was applied as a metal base, but it is effective to coat it with gold or other plating to improve the cleaning effect.

さらに、メタルマスク1の表裏を逆にして蒸着しても支
障のない場合は、その表裏の選択は自由にできることは
言うまでもない。
Furthermore, if there is no problem even if the metal mask 1 is deposited with the front and back sides reversed, it goes without saying that the front and back sides can be freely selected.

〔発明の効果〕〔Effect of the invention〕

以上のようにこの発明は、メタルマスクを磁性体で構成
したので、基板に密着させることができ、そのためメタ
ルマスク1枚で正確、かつ、精密な配線パターンYセラ
ミック等の絶縁基板上に形成することができる。加えて
安価で、かつ、迅速に回路基板を提供することができる
利点がある。
As described above, in this invention, since the metal mask is made of a magnetic material, it can be brought into close contact with the substrate, and therefore, accurate and precise wiring patterns can be formed on an insulating substrate such as ceramic with a single metal mask. be able to. In addition, there is an advantage that circuit boards can be provided quickly and at low cost.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はメタルマスクの断面図、第2図はメタルマスク
の部分平面図、第3図は蒸着の状態を示す概略図である
。 図中、1はメタルマスク、2はメツシュ、3は配線パタ
ーンが形成された箔層、4は被蒸着物、5はマグネット
、6は蒸着チャンバ、Tはホルダ、8は蒸着物、31は
所望の配線パターンを形成するための箔層の一部に設け
たあき部分である。 なお、必中の同一符号は同一または相当部分を示す。 代理人 大岩増雄 (外2名)
FIG. 1 is a sectional view of the metal mask, FIG. 2 is a partial plan view of the metal mask, and FIG. 3 is a schematic diagram showing the state of vapor deposition. In the figure, 1 is a metal mask, 2 is a mesh, 3 is a foil layer on which a wiring pattern is formed, 4 is an object to be deposited, 5 is a magnet, 6 is a deposition chamber, T is a holder, 8 is a deposition material, and 31 is a desired This is an opening provided in a part of the foil layer for forming a wiring pattern. Note that the same symbols that must be in the middle indicate the same or equivalent parts. Agent Masuo Oiwa (2 others)

Claims (2)

【特許請求の範囲】[Claims] (1) メタルマスクを使用して、蒸着法により基板上
に配線パターンを形成する方法にお(・て、前記メタル
マスクを磁性体で構成し、このメタルマスクシマグイ・
ットによって前記基板上に密Nさせて蒸着することを特
徴とするマスク蒸Nによる配線パターンの形成方法。
(1) In a method of forming a wiring pattern on a substrate by vapor deposition using a metal mask, the metal mask is made of a magnetic material, and the metal mask is
A method for forming a wiring pattern using mask evaporation, characterized in that N is vapor-deposited on the substrate in a dense manner by using a mask vapor deposition method.
(2) メタルマスクは、メツシュと実質的なパターン
が形成さハた箔の二層からなり、前記箔が所定の厚さを
有し、かつ、前記メツシュと箔のうち少なくとも一万が
磁性体であることを特徴とする特許請求の範囲第(11
項記載のマスク蒸着1c 、J−る配線パターンの形成
方法。
(2) The metal mask consists of two layers: a mesh and a foil on which a substantial pattern is formed, the foil has a predetermined thickness, and at least 10,000 of the mesh and the foil are made of magnetic material. Claim No. (11) characterized in that
Mask vapor deposition 1c, J-ru wiring pattern formation method as described in 1.
JP20695383A 1983-11-02 1983-11-02 Formation of wiring pattern by masked vapor deposition Granted JPS60100673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20695383A JPS60100673A (en) 1983-11-02 1983-11-02 Formation of wiring pattern by masked vapor deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20695383A JPS60100673A (en) 1983-11-02 1983-11-02 Formation of wiring pattern by masked vapor deposition

Publications (2)

Publication Number Publication Date
JPS60100673A true JPS60100673A (en) 1985-06-04
JPS6338421B2 JPS6338421B2 (en) 1988-07-29

Family

ID=16531750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20695383A Granted JPS60100673A (en) 1983-11-02 1983-11-02 Formation of wiring pattern by masked vapor deposition

Country Status (1)

Country Link
JP (1) JPS60100673A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63206465A (en) * 1987-02-20 1988-08-25 Fujitsu Ltd Production of conductor pattern
FR2648156A1 (en) * 1989-06-07 1990-12-14 Ppg Industries Inc APPARATUS AND METHOD FOR CATHODICALLY SPRAYING A COATING ON A SUBSTRATE
EP0484560A1 (en) * 1990-05-28 1992-05-13 Nagoya Oilchemical Co., Ltd. Masking material
JPH1050478A (en) * 1996-04-19 1998-02-20 Toray Ind Inc Organic field emission element and manufacture thereof
JP2003060219A (en) * 2001-06-04 2003-02-28 Fuji Electric Corp Res & Dev Ltd Thin film solar cell and manufacturing method therefor
JP2008047585A (en) * 2006-08-11 2008-02-28 Brother Ind Ltd Method of manufacturing wiring board and mask

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63206465A (en) * 1987-02-20 1988-08-25 Fujitsu Ltd Production of conductor pattern
FR2648156A1 (en) * 1989-06-07 1990-12-14 Ppg Industries Inc APPARATUS AND METHOD FOR CATHODICALLY SPRAYING A COATING ON A SUBSTRATE
EP0484560A1 (en) * 1990-05-28 1992-05-13 Nagoya Oilchemical Co., Ltd. Masking material
JPH1050478A (en) * 1996-04-19 1998-02-20 Toray Ind Inc Organic field emission element and manufacture thereof
JP2003060219A (en) * 2001-06-04 2003-02-28 Fuji Electric Corp Res & Dev Ltd Thin film solar cell and manufacturing method therefor
JP2008047585A (en) * 2006-08-11 2008-02-28 Brother Ind Ltd Method of manufacturing wiring board and mask

Also Published As

Publication number Publication date
JPS6338421B2 (en) 1988-07-29

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