JPS63210264A - Formation of film - Google Patents
Formation of filmInfo
- Publication number
- JPS63210264A JPS63210264A JP4378087A JP4378087A JPS63210264A JP S63210264 A JPS63210264 A JP S63210264A JP 4378087 A JP4378087 A JP 4378087A JP 4378087 A JP4378087 A JP 4378087A JP S63210264 A JPS63210264 A JP S63210264A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mask
- film
- magnetic
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims description 22
- 239000000696 magnetic material Substances 0.000 claims description 10
- 239000010408 film Substances 0.000 abstract description 31
- 230000005291 magnetic effect Effects 0.000 abstract description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000005240 physical vapour deposition Methods 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005422 blasting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
- B05C21/005—Masking devices
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
この発明は成膜方法に関し、さらに詳細にいえば、ＩＣ
用のモジュール基板や、ＰＡＧ基板等の半導体回路や、
絶縁被覆層を形成するための成膜方法に関する。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a film forming method, and more specifically, to an IC film forming method.
module boards, semiconductor circuits such as PAG boards,
The present invention relates to a film forming method for forming an insulating coating layer.
〈従来の技術〉
従来より、上記成膜方法として大別して以下の３種類が
採用されている。すなわち、スクリーン印刷法、エツチ
ング法、およびマスク被覆法である。<Prior Art> Conventionally, the following three types of film forming methods have been broadly classified as employed. namely, screen printing, etching, and mask coating.
スクリーン印刷法は、２５０μω以下のピッチの微細な
パターンの形成に適しておらず、またその製造方法上、
成膜材料が限定される。エツチング法は精度が高く、薄
膜のパターンニングにも適しているが工程数が多く、コ
スト高となる一方、基板および膜への損傷、汚染が生じ
て信頼性が低下することがある。The screen printing method is not suitable for forming fine patterns with a pitch of 250 μω or less, and due to its manufacturing method,
Film forming materials are limited. Although the etching method has high precision and is suitable for patterning thin films, it requires a large number of steps and is expensive, while damage and contamination to the substrate and film may occur, reducing reliability.
一方、マスク被覆法は、工程数が少なく、基板や膜への
損傷汚染が少なく、マスクと基板との密着性が確保され
れば、１００μＤ程度のピッチを得ることができるので
、ＩＣ用のモジュール基板、ＰＧＡ基板や汎用の部分被
覆リードフレーム等への成膜にあたって、広く採用され
ている。On the other hand, the mask coating method requires fewer steps, causes less damage and contamination to the substrate and film, and if the adhesion between the mask and the substrate is ensured, it is possible to obtain a pitch of about 100 μD, so it is suitable for IC modules. It is widely used for film formation on substrates, PGA substrates, general-purpose partially covered lead frames, etc.
マスク成膜法は、基板面をマスクで被覆するだけなので
、マスクを基板に密着させる必要がある。In the mask film forming method, the substrate surface is simply covered with a mask, so it is necessary to bring the mask into close contact with the substrate.
そのために、マスクを基板」二に単に載置したり、クリ
ップや錘等で機械的に固定したりすることも考えられる
が、密着度が弱かったり、密着部分にむらが生じたりし
て不都合が生じる。そのために、従来より、基板の背面
に磁石を当てて、磁力により基板を通してマスクを吸引
し、マスクを基板に均一にむらなく密着させるようにす
ることが試みられている。To this end, it is conceivable to simply place the mask on the substrate or to mechanically fix it with clips or weights, but this may be inconvenient because the adhesion may be weak or the adhesion may be uneven. arise. To this end, conventional attempts have been made to apply a magnet to the back surface of the substrate and use the magnetic force to attract the mask through the substrate, thereby bringing the mask into close contact with the substrate uniformly and evenly.
〈発明が解決しようとする問題点〉
ところが、上記の磁石を利用した成膜方法では、基板の
背面に磁石を配置するため、磁石用の余分なスペースが
広く必要となる。また、基板のセット時に磁石と基板と
の位置合わせが必要である等、そのセットに手間を要し
、量産性が悪いものであった。<Problems to be Solved by the Invention> However, in the above film forming method using magnets, since the magnets are arranged on the back side of the substrate, a large extra space is required for the magnets. Further, when setting the board, it is necessary to align the magnet and the board, which requires time and effort, and is not suitable for mass production.
〈発明の目的〉
この発明は」二足の問題点に鑑みてなされたものであり
、基板背面に磁石を付加することなくマスクを基板に密
着させることができ、ひいては量産性を向上させること
ができる成膜方法を提供することを目的としている。<Purpose of the Invention> This invention was made in view of the two problems, and it is possible to bring the mask into close contact with the substrate without adding a magnet to the back surface of the substrate, thereby improving mass productivity. The purpose of this research is to provide a film-forming method that can achieve this goal.
〈問題点を解決するための手段〉
上記の目的を達成するためのこの発明の成膜方法は、着
磁されたマスクを基板に磁気吸着させた状態で成膜する
ものである。<Means for Solving the Problems> In order to achieve the above object, the film forming method of the present invention forms a film while a magnetized mask is magnetically attracted to a substrate.
上記基板については、磁性体製のものを用いてもよく、
また背面に薄肉の磁性体を積層した非磁性体製のものを
用いてもよい。Regarding the above-mentioned substrate, one made of magnetic material may be used,
Alternatively, a non-magnetic material with a thin magnetic material laminated on the back surface may be used.
〈作用〉
以上の成膜方法であれば、マスクの磁気吸着力によって
、基板背面に磁石を配置することなく、基板とマスクと
を密着させることができる。<Function> With the above film-forming method, the substrate and mask can be brought into close contact with each other by the magnetic adsorption force of the mask without placing a magnet on the back surface of the substrate.
基板に磁性体製のものを用いる場合であれば、マスクは
基板に直接吸着する。If the substrate is made of a magnetic material, the mask is directly attracted to the substrate.
基板に非磁性体製のものを用いる場合であれば、マスク
は、基板を介して、基板の背面に積層されている磁性体
を磁気吸引することによって基板と密着することができ
る。If the substrate is made of a non-magnetic material, the mask can be brought into close contact with the substrate by magnetically attracting the magnetic material laminated on the back surface of the substrate through the substrate.
〈実施例〉 以下、実施例を示す添付図面によって詳細に説明する。<Example> Hereinafter, embodiments will be described in detail with reference to the accompanying drawings showing examples.
第１図は、この発明の成膜方法を実施する真空蒸着装置
（１）を示す概略図であり、真空槽（２）の中において
、蒸着物質（４）を入れた加熱容器（３）と、マスク（
６）で被覆された絶縁性の基板（５）とが対向配置され
ている。基板（５）の裏面には薄肉の磁性体板（７）が
積層されている。FIG. 1 is a schematic diagram showing a vacuum evaporation apparatus (1) for carrying out the film forming method of the present invention, in which a heating container (3) containing a vapor deposition substance (4) and a vacuum chamber (2) are shown. ,mask(
An insulating substrate (5) coated with 6) is placed opposite to the insulating substrate (5). A thin magnetic plate (7) is laminated on the back surface of the substrate (5).
基板（５）は、アルミナ、石英等の非磁性材料からなる
ものである。マスク（６）は、Ｆｅ、 Ｃｏ、ＮＬ等の
強磁性材料またはこれらの合金からなり、着磁されてい
る。磁性体板（７）も、Ｆｅ ｓ Ｃｏ −、ＮＬ等の
強磁性材料またはこれらの合金からなるものであり、マ
スク（６）との吸着性を持たせるために設けたものであ
る。The substrate (5) is made of a nonmagnetic material such as alumina or quartz. The mask (6) is made of a ferromagnetic material such as Fe, Co, NL, or an alloy thereof, and is magnetized. The magnetic plate (7) is also made of a ferromagnetic material such as FesCo-, NL, or an alloy thereof, and is provided to have adsorption properties with the mask (6).
マスク（６）の磁化方向は任意であり、何れかの方向に
一様に磁化されていてもよく、いくつかの方向に分割し
て磁化されていてもよい。The magnetization direction of the mask (6) is arbitrary, and it may be uniformly magnetized in any direction, or may be magnetized divided into several directions.
上記の基板（５）を用いた真空蒸着装置（１）で成膜す
ると、マスク（６）が磁性体板（７）を吸引することに
よって、基板（５）とむらなく密着するようになり、高
精度の蒸着パターンを得ることができる。When a film is formed using the vacuum evaporation apparatus (1) using the above-mentioned substrate (5), the mask (6) attracts the magnetic plate (7) so that it comes into close contact with the substrate (5) evenly. A highly accurate deposition pattern can be obtained.
基板（５）の厚さが例えば２ｎ＋＋ｎの場合、マスク（
６）が基板（５）と密着するためには、約５００エルス
テツド以上の保磁力を有している必要がある。なお、磁
性体板（７）自体の厚さは１［ｌｌ１ｌ以下であれば充
分であり、従来例の磁石より遥かに薄いものでよい。If the thickness of the substrate (5) is, for example, 2n++n, the mask (
6) must have a coercive force of approximately 500 oersted or more in order to be in close contact with the substrate (5). Note that it is sufficient that the thickness of the magnetic plate (7) itself is 1[ll1l or less, and may be much thinner than the conventional magnet.
さらに、マスク（６）とともに、磁性体板（７）を着磁
してもよい。この場合、マスク（６）に必要な保磁力は
、上記の場合より若干低下していてもよい。Furthermore, the magnetic plate (7) may be magnetized together with the mask (6). In this case, the coercive force required for the mask (6) may be slightly lower than in the above case.
磁性体板（７）は単一の板に限らず、吸着性を確保でき
れば、複数の板を張り合わせたものや、部分的に穴開は
加工、溝加工がなされているものでもよい。さらには、
第２図に示すように、基板としての非磁性体のセラミッ
ク絶縁膜（５１）の裏側に、磁性体としてのコバール製
等のり−ドピン（７Ｉ）を接続したものであってもよい
。The magnetic plate (7) is not limited to a single plate, but may be a plurality of plates laminated together or partially drilled or grooved as long as adsorption properties can be ensured. Furthermore,
As shown in FIG. 2, a glued pin (7I) made of Kovar or the like as a magnetic material may be connected to the back side of a non-magnetic ceramic insulating film (51) as a substrate.
上記の各実施例では、基板として非磁性体のものを用い
たが、磁性体の基板にも適用可能であり、この場合は、
第３図に示すように、マスク（６２）を直接基板（５２
）に吸着させて成膜する。この方法によれば、マスク（
６２）が基板（５２）に直接吸着するので、マスク（６
２）の保磁力は、約２００エルステツド程度でよい。In each of the above embodiments, a non-magnetic substrate was used, but it can also be applied to a magnetic substrate; in this case,
As shown in FIG. 3, the mask (62) is directly attached to the substrate (52).
) to form a film. According to this method, the mask (
62) is directly adsorbed to the substrate (52), so the mask (62)
The coercive force of 2) may be about 200 oersted.
なお、この発明は上記の実施例に限定されるものではな
く、例えば成膜方法として、真空蒸着法以外に、イオン
ブレーティング法、スパッタリング法その他の物理的蒸
着法を採用してもよく、このほか電気的、化学的に成膜
するめっき法を採用してもよい。ただ、基板自体を例え
ば６００℃以上に加熱すると、基板の保磁力の低下が著
しいので、成膜中基板は６００℃以下に保つことが好ま
しい。Note that the present invention is not limited to the above-mentioned embodiments, and for example, as a film forming method, in addition to the vacuum evaporation method, an ion blasting method, a sputtering method, or other physical vapor deposition method may be adopted. In addition, a plating method that forms a film electrically or chemically may be used. However, if the substrate itself is heated to, for example, 600° C. or higher, the coercive force of the substrate will drop significantly, so it is preferable to keep the substrate at 600° C. or lower during film formation.
その他この発明の要旨を変更しない範囲内において、種
々の変更を施すことが可能である。Various other changes can be made without departing from the gist of the invention.
く試験例〉
この発明の試験例として、２０μｍのアルミナ基板の裏
から、０ 、２５ ｍｍ厚のＦａ−４２％Ｎし板を積層
し、幅１００卯間隔１００μωの周期的格子を５０本有
する、０．１ｍｍ厚の約５０００エルステツドに着磁し
たＮしマスクを基板に配置して、八〇の真空蒸着を試み
た。真第４図は実測膜厚分布を示すグラフ。Test Example> As a test example of the present invention, Fa-42%N plates with a thickness of 0 and 25 mm were laminated from the back of a 20 μm alumina substrate, and 50 periodic gratings with a width of 100 μm and an interval of 100 μω were formed. A 0.1 mm thick N mask magnetized to about 5000 oersted was placed on the substrate, and vacuum evaporation of 80 times was attempted. Figure 4 is a graph showing the actually measured film thickness distribution.
空度は９．ＯＸ １Ｏ−６Ｔｏｒｒｓ基板温度は１５０
℃、成膜速度５０八／ｓｅｃで膜厚的３μｍを得た。成
膜中、マスクが剥離することもなく、良好なＡＱ膜パタ
ーンを形成することができた。第４図は、形成された膜
厚を実測し、膜厚分布として表わしたグラフであり、Ａ
Ｑ膜パターンのピッチが目標値の１００μｍ前後に納ま
っているので、この発明が実用に適していることが分か
る。The degree of vacancy is 9. OX 1O-6 Torrs substrate temperature is 150
A film thickness of 3 μm was obtained at a temperature of 50° C. and a film formation rate of 508/sec. During film formation, the mask did not peel off, and a good AQ film pattern could be formed. FIG. 4 is a graph showing the actual measurement of the formed film thickness and the film thickness distribution.
Since the pitch of the Q film pattern is within the target value of approximately 100 μm, it can be seen that this invention is suitable for practical use.
〈発明の効果〉
以上のようにこの発明によれば、基板の裏側に別に磁石
を設けることなく、マスクおよび基板を互いに均一にむ
らなく密着することができるのでで、基板と磁石との位
置合わせが不要となり、量産性に優れた成膜を行うこと
ができるという特有の効果を奏する。<Effects of the Invention> As described above, according to the present invention, the mask and the substrate can be brought into close contact with each other uniformly and evenly without providing a separate magnet on the back side of the substrate. This has the unique effect of making it possible to form films with excellent mass productivity.
第１図は成膜方法を実施する蒸着装置を示す概略図、
第２図、第３図はそれぞれ基板の一例を示す側面図、
（５）・・・基板、（６）・・・マスク、（７）・・・
磁性体特許出願人 住友電気工業株式会社
第１図
第２図 第３図FIG. 1 is a schematic diagram showing a vapor deposition apparatus for carrying out a film forming method, FIGS. 2 and 3 are side views each showing an example of a substrate, (5)...Substrate, (6)...Mask, (7)...
Magnetic substance patent applicant Sumitomo Electric Industries, Ltd. Figure 1 Figure 2 Figure 3
Claims (1)
外の基板面に成膜する成膜方法において、着磁されたマ
スクを基板に磁気吸着させた状態で成膜することを特徴
とする成膜方法。 ２、基板として、背面に薄肉の磁性体を積層した非磁性
体製のものを用いる上記特許請求の範囲第１項記載の成
膜方法。 ３、基板として、磁性体製のものを用いる上記特許請求
の範囲第１項記載の成膜方法。[Claims] 1. In a film forming method in which a film is formed on a substrate surface other than the mask-covered portion with a mask covering the substrate, the film is formed while a magnetized mask is magnetically attracted to the substrate. A film forming method characterized by the following. 2. The film forming method according to claim 1, in which the substrate is made of a non-magnetic material with a thin magnetic material laminated on the back surface. 3. The film forming method according to claim 1, in which the substrate is made of a magnetic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4378087A JPS63210264A (en) | 1987-02-25 | 1987-02-25 | Formation of film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4378087A JPS63210264A (en) | 1987-02-25 | 1987-02-25 | Formation of film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63210264A true JPS63210264A (en) | 1988-08-31 |
Family
ID=12673269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4378087A Pending JPS63210264A (en) | 1987-02-25 | 1987-02-25 | Formation of film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63210264A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03106356U (en) * | 1990-02-14 | 1991-11-01 | ||
| US20120052205A1 (en) * | 2010-08-24 | 2012-03-01 | Hon Hai Precision Industry Co., Ltd. | Coating method for forming pattern on workpiece |
| CN106269401A (en) * | 2016-09-30 | 2017-01-04 | 四川建筑职业技术学院 | A kind of flooring wood paint application device being difficult to reveal |
-
1987
- 1987-02-25 JP JP4378087A patent/JPS63210264A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03106356U (en) * | 1990-02-14 | 1991-11-01 | ||
| US20120052205A1 (en) * | 2010-08-24 | 2012-03-01 | Hon Hai Precision Industry Co., Ltd. | Coating method for forming pattern on workpiece |
| US8535508B2 (en) * | 2010-08-24 | 2013-09-17 | Hon Hai Precision Industry Co., Ltd. | Coating method for forming pattern on workpiece |
| CN106269401A (en) * | 2016-09-30 | 2017-01-04 | 四川建筑职业技术学院 | A kind of flooring wood paint application device being difficult to reveal |
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| JPH01290757A (en) | Mask for vapor deposition |