JPS60100665A - Apparatus for producing thin film - Google Patents

Abstract

PURPOSE:To form a thin film having good quality in the stage of forming the thin film by a vapor deposition method on a substrate by disposing shutters on a flying passage for particles for forming the thin film to restrict heat radiation, incidence of spatters, etc. and making only the evaporating particles incident the substrate. CONSTITUTION:A thin film is formed on a substrate by a vapor deposition method such as a vacuum deposition method or sputtering method. A vapor source 3 consisting of a crucible 5 contg. a base metal 4 for evaporation is put into a vacuum vessel 1 and a substrate 7 to be formed thereon with the thin film is disposed above said source. Shutters 9, 10 which can be rotated by revolving shafts 11, 12 are disposed at a prescribed space between the source 3 and the substrate 7. The shutters 9, 10 are opened and closed at the specified relation maintained with the flying speed of the evaporating particles in the stage of forming the thin film by making the evaporating particles released from the base metal 4 of the source 3 incident to the surface of the substrate 7, by which only the evaporating particles are passed through the shutters and the thin film having good quality is formed while the heat radiation of high energy and the incidence of the spatters are prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a thin film manufacturing apparatus capable of manufacturing all thin films of good quality in thin film manufacturing using a vapor phase deposition method.

[Prior art]

There is a conventionally used thin film manufacturing apparatus of this type that utilizes a vacuum evaporation method. This device produces thin films by vaporizing a base material using methods such as electrical heating or electron beam heating, and then attaching and depositing all of the vaporized base material's atoms or molecules onto a substrate placed opposite the base material. There is something to do. However, in this case, the evaporation matrix is usually

Because it is heated to a high temperature of several hundred degrees Celsius or more, it has drawbacks such as thermal damage to the substrate due to the heat radiation, and droplets emitted from the evaporation source that collide with the substrate surface and damage the thin film. Ta.

Another typical thin film manufacturing device is one using sputtering. In this method, atoms or molecules of the base material are caused to sputter and evaporate by colliding high-speed particles with the base material, and a thin film is formed on the substrate facing the sputtering. However, in this device, the base material is normally sputtered by the action of ions in plasma generated by low-pressure gas discharge, so high-energy particles such as ions and electrons are also incident on the substrate surface. It had the disadvantage of damaging the thin film.

[Object and structure of the invention]

The present invention has been made in order to solve all of the above drawbacks, and its purpose is to prevent heat radiation onto the substrate surface.
It is an object of the present invention to provide a thin film manufacturing apparatus capable of manufacturing a high-quality thin film by suppressing the incidence of droplets or high-energy particles and allowing only evaporated particles to be incident on a substrate surface.

In order to achieve such an object, the present invention provides a thin film manufacturing apparatus using a vapor deposition method such as a vacuum evaporation method or a sputtering method. A shutter mechanism is provided at at least two positions, and by opening and closing the shutter mechanism while maintaining a constant relationship with the flight speed of the evaporated particles, only the evaporated particles are allowed to pass onto the substrate surface. Embodiments of the present invention will be described in detail below based on the drawings.

〔Example〕

FIG. 1 is a schematic diagram showing an embodiment of a thin film manufacturing apparatus according to the present invention, and shows a case using a vacuum evaporation method. In the figure, 1 is a vacuum container, 2 is an exhaust port connected to an exhaust system for evacuating the inside of the vacuum container 1, and 3 is a crucible 4 placed at a predetermined location in the vacuum container 1, and a crucible placed inside the crucible 4. This evaporation source 3 heats the evaporation base material 5 by the usual resistance heating method or electron beam heating method to form an evaporation source on the atoms or molecules of the base material. It is meant to evaporate. Further, 6 is a substrate support placed facing the evaporation source 3, T is a substrate supported by this support 6, and 8 is placed between the evaporation source 3 and the substrate T at a predetermined interval. The shutter mechanism consists of two shutter plates 9 and 10, which are supported by rotating shafts 11 and 12, respectively, and are connected to an external rotating device (
(not shown), the rotational shafts 11 and 12' are biased in both directions of the arrows 42 shown in the figure, thereby corresponding to the flight speed of the evaporated particles from the respective shutter plates s and io'i evaporation sources 3. It opens and closes alternately.

Therefore, in order to fully operate the apparatus of the above embodiment, first, the evaporation base material 5 in the crucible 4 is heated by the usual resistance heating method or electron beam heating method, and the base material is evaporated from the evaporation source 3. Next, in this state, the shack plates 9 and 10 are opened and closed at set times as typically shown in FIG.

Then, the shirt shirt plate 9 is synchronized with the start of the cycle As at time t.

It opens at time t1 and closes at time t1. Then, the shirt shirt plate 10 performs all opening and closing operations, opening at time t2 and closing at time t3, and the same operation is performed in synchronization with each start of such operation cycle A2. Therefore, when all the opening and closing operations of the shirt flap plates are performed, the flight velocity V of the evaporated particles that can pass through the shirt flap plates 9 and 10 and reach the surface of the substrate 1 from the evaporation source 3 is expressed by the following relational expression. Here, L is the distance between the shirt flap plate 9 and the shirt flap plate 10. However, for example, in the normal vacuum evaporation method, the flight speed of evaporated particles is 100
〜1000m/sec, so L=20cm″t
In the case of 6, if (h-tl)'fi- is set to less than about 0.2 m5ec, the evaporated particles will pass through both the shutter plates 9 and 10 and reach the surface of the substrate 1.

FIG. 3 is a schematic configuration diagram showing another embodiment of the present invention.
The difference from FIG. 1 is that a shutter mechanism consisting of three rotary shutters 15, 16 and 17 connected at equal intervals f'' on the rotation axis 14 of the morph 13 is located between the evaporation source 3 and the substrate 7. In this case, on the circumference of each of the rotating shutters 15 to 170, as shown in FIG.
Shielding portions 181 to 183 and slit portions 191 to 193 are provided alternately at an angle of .
and slit portion 19. , 193 are displaced by 45° from each other.

The intermediate rotary shutter 16 has a shielding portion 182.
The slit portion 192 is displaced by 22.5° with respect to each rotating shutter 15°1γ, and each rotating shutter 15
~1γ is designed to repeat opening and closing four times. Therefore, the evaporated particles flow from the slit portion 191 of the lower rotary shutter 15 to the slit portion 192 of the intermediate rotary shutter 16.
During the time it takes to reach the slit part 193 of the upper rotating shack 1γ, that is, L/v (where L is the distance between each rotating shutter 15 to 17, and ■ is the flight speed of the evaporated particles), the rotating shaft 14 Motor 13 rotates 1/4 rotation.
If the rotation speed is set, the evaporated particles will pass through each rotating shutter 15.
It is possible to reach the surface of the substrate 7 without being obstructed by any of the tracing sections 181 to 183 of .about.17.

FIG. 5 is a schematic configuration diagram showing still another embodiment of the present invention, in which a rotating body 20 connected to the rotating shaft 14 of a motor 13 and having a spiral slit on the side surface is used as a shutter mechanism to connect the evaporation source 3 and the substrate. A specific example of this is shown in Figure 6. In FIG. 6, the rotating body 20 is attached to the side surface of the cylinder 21 at a constant angle of inclination and at a constant interval. A spiral slit is formed by two adjacent fins 22. 23 is formed. As shown in FIG. 6(b), the length tL of the slit groove 23 in the rotational axis direction and the inclination angle of the slit groove 23 with respect to the rotational axis direction are θ99 radius 'r r + unit time. The rotational speed of the rotating body (i:N) is the time required for an evaporated particle with a flight speed V to fly a distance along the rotational axis direction, that is, L/v, when the slit groove 23 is If it moves by Lta++θ in the circumferential direction, the slit groove 2
The evaporated particles incident on one end of slit #2 are not blocked by the slit wall, that is, the fin 22, on the way.
3ffi can be passed. Note that the reference numeral 30 in FIG. 6(b) indicates the moving direction of the fin 22.

The flight speed V of the evaporated particles and the rotation speed R of the rotating body 20 are shown below.
I will explain the relationship with That is, the pitch P of the spiral slit grooves 23 of the rotating body 20 is given by: on the other hand,
During the time L/v, the slit groove 23 moves on the circumference of the rotating body 20 by a distance of 2πr·1·−(3) ■. Therefore, the condition under which the evaporated particles can pass through the entire slit groove 23 is given by 2πr-R.-=Lb+nθ (4) (4). The above equation (4) can be changed to a simpler equation by using equation (2). That is, the following equation finally gives the relationship between the rotational speed of the rotating body 200 and the flight speed of the evaporated particles passing through the spiral slit groove 23.

As specifically explained in each of the embodiments above, the present invention makes it possible to make only evaporated particles with a desired flight speed (kinetic energy) incident on the entire substrate surface using a shutter with a simple configuration. .

This completely prevents light emitted from the evaporation source and radiant heat from entering the substrate surface. Further, if the present invention is applied to a sputtering method, it is possible to completely prevent high-energy ions, electrons, neutral particles, etc., which were conventionally considered harmful to film formation, from entering the substrate. Furthermore, the present invention can not only prevent light and high-velocity particles from entering the substrate, but also allow droplets of the evaporated base material having a macroscopic shape (flight speed is usually less than a few m/'S e e) to fly over the substrate surface. It has the effect of completely preventing any incident on the body.

〔Effect of the invention〕

As explained above, according to the thin film manufacturing apparatus of the present invention,
Lighting the substrate surface, which was considered difficult in the past.

It is possible to completely suppress the incidence of heat, high-velocity particles, and base material splashes. Therefore, when a thin film of a photosensitive material is formed using the apparatus of the present invention, the deposited film is not exposed to the light emitted from the evaporation source, so that a photosensitive thin film with high photosensitivity can be formed. Furthermore, by using the apparatus of the present invention, it is possible to form a film on a substrate coated with a material that is easily damaged by heat, such as an organic resist, without deteriorating it. It's effective in doing so. Furthermore, Y
If the apparatus of the present invention is applied to the formation of thin films of optical materials such as 2O3 and At203, the occurrence of lattice defects in deposited films caused by irradiation with light and high-speed particles can be suppressed, and optical thin films of good quality can be obtained. There are other effects.

The field of application of the apparatus of the present invention is not limited to the above-mentioned examples, but is generally effective for producing high-quality products with good crystallinity.

[Brief explanation of the drawing]

FIG. 1 is a schematic configuration diagram showing an embodiment of a thin film manufacturing apparatus according to the present invention, FIG. 2 is an explanatory diagram showing the operation of the embodiment,
3 and 4 are schematic configuration diagrams and partial perspective views thereof showing another embodiment of the present invention, and FIGS. 5 and 6 (a).
, (b) are a schematic configuration diagram showing still another embodiment/example of the present invention, as well as a specific perspective view and a side view of the main parts thereof. 1... Curved vacuum container, 2-... Exhaust port, 3... Evaporation source, 4... Crucible, 5... Evaporation base material, 6...
... Board support stand, 7... Board, 8, e-fist, shirt 1
Machine m, 9, 10 @φ...Shaft plate, 11, 12...◆...
・Rotation axis, 13・φ・・Motor, 14・Fist・・Rotation axis,
15, 16° 17...Rotating shutter, 2o...
Rotating body, 21...φ cylinder, 22...fin, 23
-Fist fighting/slit groove. Patent Applicant Nippon Telegraph and Telephone Public Corporation Agent Masaki Yamakawa 141 Figure 2 Figure 3 Figure 1 Figure 5 13

Claims (4)

[Claims] (1) In a thin film manufacturing apparatus using a vapor deposition method such as a vacuum evaporation method or a sputtering method, a shutter mechanism is installed at at least two spatially separated locations on the flight path of particles to be deposited on a substrate at a distance of D1 or more. The shutter mechanism is configured to allow only the evaporated particles to pass over the substrate by opening and closing the shutter mechanism while maintaining a constant relationship with the flight speed of the evaporated particles. Device. (2) The thin film manufacturing apparatus according to claim 1, wherein the shutter mechanism is comprised of two or more shutter plates. (3) The thin film manufacturing apparatus according to claim 1, wherein the shutter mechanism comprises two or more rotary shutters connected coaxially. (4) Claim 1, characterized in that the shutter mechanism consists of a rotating body having a spiral sulin on the side surface.
The thin film manufacturing apparatus described in Section 1.