JP2004253504A - Apparatus and method for vacuum vapor deposition - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain an apparatus and a method for vacuum vapor deposition which can maintain the deposition uniformity without increasing the size of the apparatus and which has proper productivity. <P>SOLUTION: The annular running path 141 of the shape that the ends of outside and inside circles are connected in a U shape by cutting out the parts of two concentric circles in a sector shape with the center 14a of a dome type disk 14 as a center is installed on the dome type disk 14 opposed to an evaporation source 114. A plurality of semiconductor substrates 112 are held on this annular running path 141, and are moved along the annular running path 141 while these semiconductor substrates 112 are rotated around their own axes. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a vacuum deposition apparatus and a vacuum deposition method for forming a film while rotating a member to be deposited in a vacuum chamber.
[0002]
[Prior art]
Vacuum evaporation technology, one of the thin film forming technologies, is not limited to the production of electronic components such as semiconductor integrated circuits and high-density information storage media, but also the development of new electronic devices such as surface modification of mechanical components and superconducting thin films. It is used for a wide range of applications.
[0003]
FIG. 3 shows an example of the configuration of a conventional vacuum evaporation apparatus using an electron beam heating method, for example, in which a metal electrode is formed on a semiconductor substrate. This apparatus includes a vapor deposition chamber 11, a high vacuum pump unit 12, and an electron beam control unit 13.
[0004]
A dome-shaped disk 111 for holding a plurality of semiconductor substrates 112 is provided in the upper part of the evaporation chamber 11. The dome-shaped disk 111 is configured to be capable of simultaneously depositing a plurality of semiconductor substrates 112 by a single deposition process. That is, for example, as shown in FIG. 4, a plurality of semiconductor substrates 112 are arranged and held on the circumference of a circle 111a whose center coincides with the center 113 of the dome-shaped disk 111. An evaporation source 114 is provided at the bottom of the evaporation chamber 11 vertically below the center 113 of the dome-shaped disk 111.
[0005]
In order to perform vapor deposition with this apparatus, first, a semiconductor substrate 112 as a member to be vapor-deposited is set on a dome-shaped disk 111, and the inside of the vapor deposition chamber 11 is evacuated by a high vacuum pump unit 12 while heating the semiconductor substrate 112. Next, in order to pre-heat the evaporating substance 114a after the inside of the vapor deposition chamber 11 is brought into a predetermined vacuum state, the vapor deposition chamber 114 is installed at the bottom of the vapor deposition chamber 11 under the control of the electron beam control unit 13 with the shutter 117 closed. The filament 115 is heated to generate thermoelectrons, an electron beam 115a is formed by the electromagnetic magnet 116, and the electron beam 115a is irradiated on the evaporating substance 114a arranged in the evaporation source 114 to heat it. When the preheating is completed, the shutter 117 is opened, and the evaporation flow 114b generated from the evaporation source 114 reaches the semiconductor substrate 112 to form a deposited film, and the film formation state is monitored by the film thickness monitor 118.
[0006]
As described above, in the above-described vacuum evaporation apparatus, the semiconductor substrate 112 and the evaporation source 114 held on the dome-shaped disk 111 are vertically opposed in the evaporation chamber 11, and the evaporation source 114 is moved upward from the evaporation source 114. Although the film is formed on the semiconductor substrate 112 by the evaporation flow 114b, the density of the evaporation flow 114b from the evaporation source 114 is usually not uniform in the evaporation chamber 11. That is, the density tends to be highest immediately above the evaporation source 114, and the density tends to decrease toward the periphery of the dome-shaped disk 111. For this reason, the thickness of the deposited film greatly varies depending on the position of the dome-shaped disk 111 on which the semiconductor substrate 112 is held.
[0007]
In order to improve this phenomenon, by rotating the semiconductor substrate 112 itself while rotating the dome-shaped disk 111, the non-uniformity of film formation in the circumferential direction and the radial direction of the dome-shaped disk 111 has been reduced. 2. Description of the Related Art A vacuum evaporation apparatus of a mold type has been proposed (for example, see Patent Document 1). In addition, a self-revolving substrate holding device that can also be applied to a vacuum evaporation device has been proposed (for example, see Patent Document 2).
[0008]
In the case of the above-described self-revolving type, the semiconductor substrate 112 held on the dome-shaped disk 111 in FIG. 4 is rotated by a rotation drive unit (not shown) around the held center 112 a as a dome-shaped. It revolves along the circle 111a around the center 113 of the disk.
[0009]
[Patent Document 1]
JP-A-10-280130 (page 5, FIG. 1)
[0010]
[Patent Document 2]
JP-A-8-250577 (page 4, FIG. 1)
[0011]
[Problems to be solved by the invention]
However, in order to improve the productivity of a batch deposition process, when more semiconductor substrates are held on the dome-shaped disk 111, or when a semiconductor substrate having a larger diameter is held, the circle 111a on which these substrates are arranged is reduced. As the radius increases, the size of the dome-shaped disk 111 also increases, and the size of the entire apparatus increases. Further, the difference between the density of the evaporation flow 114b from the evaporation source 114 at the center and the periphery of the dome-shaped disk 111 is further increased, and the uniformity of film formation is further impaired.
[0012]
Further, in order to avoid an increase in the size of the apparatus, for example, on a dome-shaped disk 111, a circle 111b which is concentric with the circle 111a which is a revolving orbit is set. A method of optimizing the distance and holding the semiconductor substrate 112 also on the circumference of the circle 111b to increase the number of substrates may be considered. However, also in this case, since the direction dependency of the density of the evaporation flow 114b from the evaporation source 114 differs depending on the type of the evaporation material 114a, it is difficult to form a uniform vapor deposition film by changing the evaporation material 114a.
[0013]
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a vacuum evaporation apparatus and a vacuum evaporation method that can maintain uniformity of film formation without increasing the size of the apparatus and have good productivity. .
[0014]
[Means for Solving the Problems]
In order to achieve the above object, a vacuum evaporation apparatus of the present invention includes a member to be evaporated disposed above the evaporation source in a vacuum chamber having an evaporation source, the evaporation source being opposed to the evaporation source. In a vacuum deposition apparatus for forming a film on a member to be deposited by an evaporative flow, a predetermined annular running path is provided in the vacuum chamber, and the member to be deposited is moved along the annular running path.
[0015]
Further, in the vacuum vapor deposition method of the present invention, a member to be vapor-deposited is disposed above the evaporation source in a vacuum chamber having an evaporation source therein, the member being vapor-deposited by the evaporation source from the evaporation source. In the vacuum vapor deposition method for forming a film on the substrate, the member to be vapor-deposited is moved along an annular runway set in the vacuum chamber in advance.
[0016]
ADVANTAGE OF THE INVENTION According to this invention, the vacuum evaporation apparatus and vacuum evaporation method with good productivity which can maintain the uniformity of film formation without enlarging an apparatus can be obtained.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of a vacuum deposition apparatus and a vacuum deposition method according to the present invention will be described below with reference to FIGS. The same components as those of the conventional vacuum vapor deposition device shown in FIG. 3 are denoted by the same reference numerals, and detailed description is omitted.
[0018]
FIG. 1 is a configuration diagram showing one embodiment of a vacuum evaporation apparatus according to the present invention. This vacuum deposition apparatus is used, for example, when a member to be deposited is a planar semiconductor substrate and a metal electrode is formed on the substrate by vapor deposition. As shown in FIG. It comprises a section 12, an electron beam control section 13 and an annular track drive section 15.
[0019]
The vapor deposition chamber 11 keeps the internal space where the film is formed in a vacuum. An evaporation source 114, a filament 115, and an electromagnetic magnet 116 are provided at the bottom thereof, and an evaporation substance 114a is arranged at the evaporation source. The filament 115 generates thermal electrons when heated under the control of the electron beam control unit 13. These thermoelectrons are focused by the electromagnetic magnet 116 and become an electron beam 115a to heat the evaporant 114a. Further, a shutter 117 is provided directly above the evaporation source 114 to block an evaporation flow 114b generated by heating the evaporation material 114a.
[0020]
A dome-shaped disk 14 is provided at an upper portion in the evaporation chamber 11 so as to face the evaporation source 114. On the surface of the dome-shaped disk 14 on the side facing the evaporation source 114, an annular runway 141 that holds a plurality of semiconductor substrates 112 as members to be evaporated and that can move while rotating these semiconductor substrates 112 is installed. ing.
[0021]
FIG. 2 is a schematic diagram showing the configuration of the dome-shaped disk 14. FIG. 2A is a schematic plan view of the dome-shaped disk 14 as viewed from the evaporation source 114 side, and FIG. 2B is a schematic plan view of a cross section taken along line AA. In the present embodiment, as shown in FIG. 2A, the shape of the annular runway 141 is such that a part of two concentric circles centered on the center 14a of the dome-shaped disk 14 is cut into a fan shape, and the cut outer side is formed. And each end of the inner circle is connected in a U-shape. This allows more semiconductor substrates 112 to be held on the annular runway 141 without increasing the size of the dome-shaped disk 14.
[0022]
In addition, as shown in FIG. 2B, in order to correct the direction dependency of the density of the evaporation flow 114b from the evaporation source 114, the semiconductor substrate 112 is mounted on either the outer annular runway 141a or the inner annular runway 141b. The height of each of the annular runways 141a and 141b in the outer portion and the inner portion is set so that the distances d1 and d2 to the evaporation source 114 are optimized even during the movement. Furthermore, the semiconductor substrate 112 is held by the plurality of holders 142 arranged on the annular runway 141 so that the center 112a of the semiconductor substrate 112 is always perpendicular to the evaporation source 114, and the center 112a is centered on the center 112a. The semiconductor substrate 112 is rotated in the circumferential direction.
[0023]
The annular runway driving section 15 drives the annular runway 141 through a driving mechanism (not shown), and gives a driving force to move the holder 142 along the annular runway 141. Further, a rotational force for rotating the semiconductor substrate is applied to the holder 142 being moved via the annular runway 141.
[0024]
Next, a process of performing vapor deposition using the vacuum vapor deposition apparatus configured as described above will be described with reference to FIGS.
[0025]
First, the semiconductor substrate 112 is set on the holder 142 provided on the annular runway 141 on the dome-shaped disk 14. The annular runway 141 has a shape in which two concentric circles on the dome-shaped disk 14 are connected as shown in FIG. 2A, and more semiconductor substrates 112 can be set. Next, the semiconductor substrate 112 is heated to an appropriate temperature, and the inside of the evaporation chamber 11 is evacuated by operating the high vacuum pump unit 12. Then, after the inside of the vapor deposition chamber 11 is brought into a predetermined vacuum state, the filament 115 is heated under the control of the electron beam control unit 13 with the shutter 117 closed so as to preheat the evaporant 114a. Is generated, and an electron beam 115a is formed by the electromagnetic magnet 116 and is irradiated on the evaporating substance 114a.
[0026]
When the irradiation of the electron beam 115a is continued and the preheating of the evaporative substance 114a is completed, and the film formation on the semiconductor substrate 112 can be started, the circular runway driving unit 15 is operated to move the semiconductor substrate 112 to the circular runway 141. At the same time, the shutter 117 is opened. Thereafter, the evaporation flow 114b generated from the evaporation source 114 reaches the rotating semiconductor substrate 112 to form a deposited film, and the film formation state is monitored by the film thickness monitor 118. The vapor deposition time is set to an integral multiple of the cycle in which the semiconductor substrate 112 makes one round of the annular runway 141 in order to make the vapor deposition film thickness of each semiconductor substrate 112 more uniform.
[0027]
During the deposition of the vapor-deposited film, the semiconductor substrate 112 continues to move along the annular runway 141 on the dome-shaped disk 14, but moves over both the outer annular runway 141a and the inner annular runway 141b. This reduces unevenness in film formation due to variations in the density of the evaporation flow 114b in the radial direction of the dome-shaped disk 14. In addition, by moving the annular runway 141a on the outer portion and the annular runway 141b on the inner portion along the circumferential direction of the dome-shaped disk 14, variations in the density of the evaporation flow 114b in the circumferential direction of the dome-shaped disk 14 are generated. The unevenness of the film is reduced.
[0028]
Further, the semiconductor substrate 112 rotates in the circumferential direction while its center 112a is always kept perpendicular to the evaporation source, so that the variation of the density of the evaporation flow 114b depending on the direction from the evaporation source 114 is obtained. The unevenness of film formation due to is reduced.
[0029]
As described above, according to the vacuum vapor deposition apparatus and the vacuum vapor deposition method according to the present embodiment, the shape of the annular runway 141 installed on the dome-shaped disk 14 is obtained by cutting a part of two concentric circles into a fan shape, and Each end of the inner circle is connected in a U-shape. Accordingly, more semiconductor substrates 112 can be held on the annular runway 141 in one vapor deposition process without increasing the size of the dome-shaped disk 14, and the productivity of vapor deposition can be improved.
[0030]
Further, the semiconductor substrate 112 is moved in the radial direction and the circumferential direction of the dome-shaped disk 14 along the annular runway 141 while rotating the semiconductor substrate 112 during the formation of the deposition film. Thereby, the non-uniformity of the film formation due to the direction dependency and the variation of the density of the evaporation flow 114b in the evaporation chamber 11 can be reduced, and the uniformity of the film formation can be improved.
[0031]
In the present embodiment, the annular runway 141 has a shape in which a part of two concentric circles is cut into a fan shape and ends of the outer and inner circles are connected in a U-shape. Any shape may be used as long as it is formed in an annular shape on the mold disk 14, for example, a star shape centered on the center 14 a of the dome-shaped disk 14.
[0032]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the vacuum evaporation apparatus and vacuum evaporation method with good productivity which can maintain the uniformity of film formation without enlarging an apparatus can be obtained.
[Brief description of the drawings]
FIG. 1 is a configuration diagram showing one embodiment of a vacuum evaporation apparatus according to the present invention.
FIG. 2 is a schematic diagram showing a configuration of a dome-shaped disk.
FIG. 3 is a configuration diagram showing an example of a conventional vacuum evaporation apparatus using an electron beam heating method.
FIG. 4 is an explanatory view showing an example of an arrangement of a semiconductor substrate on a dome-shaped disk.
[Explanation of symbols]
REFERENCE SIGNS LIST 11 evaporation chamber 12 high vacuum pump unit 13 electron beam control unit 14, 111 dome-shaped disk 15 annular runway drive unit 112 semiconductor substrate 113 center of dome-shaped disk 114 evaporation source 115 filament 116 electromagnetic magnet 117 shutter 118 film thickness monitor 141 annular runway 142 holder

Claims (6)

In a vacuum evaporation apparatus, a member to be deposited is disposed above the evaporation source in a vacuum chamber having an evaporation source therein, facing the evaporation source, and a film is formed on the member to be deposited by an evaporation flow from the evaporation source.
A vacuum deposition apparatus, comprising: a preset annular runway in the vacuum chamber; and moving the deposition target member along the annular runway. The vacuum deposition apparatus according to claim 1, wherein the deposition target member rotates while moving along the annular runway. At least a part of the surface of the deposition target member is formed in a plane, and the evaporation source and the deposition target member are opposed to each other so that a normal line from the evaporation source to the plane always exists. The vacuum evaporation apparatus according to claim 1 or 2, wherein In a vacuum deposition method in which a member to be deposited is disposed above the evaporation source in a vacuum vessel having an evaporation source inside the evaporation source so as to face the evaporation source, and a film is formed on the member to be deposited by an evaporation flow from the evaporation source,
A vacuum deposition method, wherein the member to be deposited is moved along an annular runway set in the vacuum chamber in advance. The vacuum deposition method according to claim 4, wherein the deposition target member rotates while moving along the annular runway. At least a part of the surface of the deposition target member is formed in a plane, and the evaporation source and the deposition target member are opposed to each other so that a normal line from the evaporation source to the plane always exists. The vacuum deposition method according to claim 4 or 5, wherein

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