JPS60100475A - 半導体圧力センサ - Google Patents

半導体圧力センサ

Info

Publication number
JPS60100475A
JPS60100475A JP58207233A JP20723383A JPS60100475A JP S60100475 A JPS60100475 A JP S60100475A JP 58207233 A JP58207233 A JP 58207233A JP 20723383 A JP20723383 A JP 20723383A JP S60100475 A JPS60100475 A JP S60100475A
Authority
JP
Japan
Prior art keywords
resistance
elements
circuit
sides
pressure sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58207233A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0259635B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Akimitsu Kawaguchi
川口 晃充
Minoru Hirai
実 平井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP58207233A priority Critical patent/JPS60100475A/ja
Publication of JPS60100475A publication Critical patent/JPS60100475A/ja
Publication of JPH0259635B2 publication Critical patent/JPH0259635B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP58207233A 1983-11-04 1983-11-04 半導体圧力センサ Granted JPS60100475A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58207233A JPS60100475A (ja) 1983-11-04 1983-11-04 半導体圧力センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58207233A JPS60100475A (ja) 1983-11-04 1983-11-04 半導体圧力センサ

Publications (2)

Publication Number Publication Date
JPS60100475A true JPS60100475A (ja) 1985-06-04
JPH0259635B2 JPH0259635B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-12-13

Family

ID=16536433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58207233A Granted JPS60100475A (ja) 1983-11-04 1983-11-04 半導体圧力センサ

Country Status (1)

Country Link
JP (1) JPS60100475A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990986A (en) * 1988-09-02 1991-02-05 Nissan Motor Co., Ltd. Semiconductor acceleration sensor
CN104949697A (zh) * 2014-03-25 2015-09-30 精工爱普生株式会社 物理量传感器、高度计、电子设备以及移动体
JP2015184046A (ja) * 2014-03-20 2015-10-22 セイコーエプソン株式会社 物理量センサー、圧力センサー、高度計、電子機器および移動体

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990986A (en) * 1988-09-02 1991-02-05 Nissan Motor Co., Ltd. Semiconductor acceleration sensor
JP2015184046A (ja) * 2014-03-20 2015-10-22 セイコーエプソン株式会社 物理量センサー、圧力センサー、高度計、電子機器および移動体
CN104949697A (zh) * 2014-03-25 2015-09-30 精工爱普生株式会社 物理量传感器、高度计、电子设备以及移动体

Also Published As

Publication number Publication date
JPH0259635B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-12-13

Similar Documents

Publication Publication Date Title
US6658948B2 (en) Semiconductor dynamic quantity sensor
EP0311695B1 (en) Force and moment detector using resistor
US6612179B1 (en) Method and apparatus for the determination of absolute pressure and differential pressure therefrom
US5239870A (en) Semiconductor acceleration sensor with reduced cross axial sensitivity
EP0195232B1 (en) Piezoresistive strain sensing device
CN107101755A (zh) 一种应变式三维力传感器
US20110247421A1 (en) Pressure sensor
EP0111640B1 (en) Pressure sensor with semi-conductor diaphragm
KR100347334B1 (ko) 고정밀 6축 힘/모멘트 감지센서
CN117740204A (zh) 多方向应力检测传感器及检测方法
JPS60100475A (ja) 半導体圧力センサ
US6865951B2 (en) Semiconductor pressure sensor
JP2011013179A (ja) 圧力センサ及び圧力センサの製造方法
CN113203515B (zh) 压力测定装置
CN100403001C (zh) 差动式压电三维力传感器
JP7396912B2 (ja) 圧力センサ
CN102539063A (zh) 一种soi矩形膜结构高压传感器芯片
CN204924170U (zh) 可测量表面应变横向偏导的横向偏差全桥全叉指型金属应变片
CN204924171U (zh) 可测量表面应变轴向偏导的轴向偏差双敏感栅叉指型金属应变片
CN204924168U (zh) 可测量表面应变轴向偏导的轴向偏差全桥全叉指型金属应变片
US20040166601A1 (en) Semiconductor dynamic quantity sensor
JP3627275B2 (ja) 半導体装置
CN1128991C (zh) “x”型硅微应变固态压阻传感器及其制作工艺
JP7582830B2 (ja) 圧力測定装置
JPH031839B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)