JPS599915A - Forming method for transparent-film pattern - Google Patents
Forming method for transparent-film patternInfo
- Publication number
- JPS599915A JPS599915A JP57118135A JP11813582A JPS599915A JP S599915 A JPS599915 A JP S599915A JP 57118135 A JP57118135 A JP 57118135A JP 11813582 A JP11813582 A JP 11813582A JP S599915 A JPS599915 A JP S599915A
- Authority
- JP
- Japan
- Prior art keywords
- light
- laser
- transparent
- electrode
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/24—Ablative recording, e.g. by burning marks; Spark recording
Landscapes
- Laser Beam Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、透明膜、例えば透光性基板上に形成された透
明膜をレーザ光で切断してパターンを形成する方法に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of cutting a transparent film, such as a transparent film formed on a transparent substrate, with laser light to form a pattern.
従来、例えば集積型非晶質シリコン太陽電池において・
透光性基板上に形成した透明電極に、複数の太陽電池を
製造するためのパターンを形成するには、フォトエツチ
ング法がそのパターン精度の良好なことから広く使用さ
れているが、フォトエツチング法は工程が非常に長く、
且つレジスト膜の洗浄、除去工程や酸、アルカリ類から
なるエツチング液の洗浄、除去工程に時間がかかり、こ
れらの工程が不完全であると歩留が低下し、またエツチ
ング液の廃液処理にかなりの費用がかかり、更に作業環
境中のダストの影響を受けて透明電極にピンホールが発
生し歩留が低下する等の不都合があった。Conventionally, for example, in integrated amorphous silicon solar cells,
Photo-etching is widely used to form patterns for manufacturing multiple solar cells on transparent electrodes formed on transparent substrates due to its good pattern accuracy. The process is very long,
In addition, the process of cleaning and removing the resist film and the process of cleaning and removing the etching solution consisting of acids and alkalis takes time, and if these processes are incomplete, the yield decreases, and it takes a considerable amount of time to dispose of the etching solution waste. In addition, there were other inconveniences such as the production of pinholes in the transparent electrode due to the influence of dust in the working environment and a decrease in yield.
本発明はレーザ光を用いてかかる不都合を無くずと共に
パターン加工時間を短縮することができる)透明膜パタ
ーン形成方法を得ることをそI(
の目的)1.とじたものである。The present invention aims to provide a method for forming a transparent film pattern using a laser beam, which can eliminate such inconveniences and shorten the pattern processing time. It is bound.
レーザ光による加工は現在抵抗膜のトリミングに常用さ
れているが、抵抗膜は通常黒色又は灰色であるので光の
広い波長範囲に亘ってレーザ光をよく吸収しその分離が
容易に行なわれる。Machining using laser light is currently commonly used for trimming resistive films, but since resistive films are usually black or gray, they absorb laser light well over a wide wavelength range and can be easily separated.
しかし例えば太陽電池の透明電極膜の膜厚(5000A
)のように薄いと透過率が高く、例えば酸化錫膜では第
1図示のように80%程度のレーザ光が通過してしまい
抵抗膜のように効率より切断できない。However, for example, the thickness of the transparent electrode film of a solar cell (5000A
), the transmittance is high; for example, in the case of a tin oxide film, about 80% of the laser light passes through it as shown in the first figure, and it cannot be cut efficiently like a resistive film.
そこでレーザ光を利用した場合において)この問題を解
決するために、本発明は前記透光性基板のレーザ光入射
側と反対側にレーザ光反射鏡を配設し、レーザ入射光及
びレーザ反射光のパワーにより前記透明膜を切断するこ
とを特徴とする。In order to solve this problem (when laser light is used), the present invention provides a laser light reflecting mirror on the side opposite to the laser light incident side of the transparent substrate, so that the laser incident light and the laser reflected light can be reflected. The transparent film is cut by a power of .
今切断効率をAとすると
■
A=に−
K:比例定数
■:切断速度(cm / sec )
P:レーザパワ−(W)
の関係にあり、本発明によれば、通常のレーザ光による
加工に比べて切断効率Aを10〜50%向上させること
ができ、同じレーザ光パワーでは切断速度Vを10〜5
0%速くでき、また同じ切断速度でよいならばレーザ光
パワーを10〜50%低くしても透明膜の切断をするこ
とができる。Now, if the cutting efficiency is A, there is a relationship as follows: ■ A = - K: Proportionality constant ■: Cutting speed (cm/sec) P: Laser power (W) According to the present invention, processing using normal laser light is possible. The cutting efficiency A can be improved by 10-50%, and the cutting speed V can be improved by 10-50% with the same laser power.
0% faster, and if the same cutting speed is sufficient, the transparent film can be cut even if the laser light power is lowered by 10 to 50%.
本発明に用いるレーザ光としては、YAGレーザ(波長
1.06μ)、ルビーレーザ(波長−0、6945μ)
やアルゴンレーザ(0,5145μ又は0.4880μ
)、00レーザ(10μ)等が利用できる。The laser beams used in the present invention include YAG laser (wavelength 1.06μ), ruby laser (wavelength -0, 6945μ)
or argon laser (0.5145μ or 0.4880μ
), 00 laser (10μ), etc. can be used.
実施例1
膜厚5oooXの酸化錫膜を一面に析出させた13cm
角のガラス板を2枚用意し、この上に16個の電卓用人
@電池(5素子直列型)を製造するための透明導電膜の
パターンをYAGレーザを用いて形成した。その一枚は
、第2図示のようにレーザ光反射鏡(1)を透光性基板
(2)のレーザ光入射側と反対側に透明電極(3)と平
行に配設し、レーザビーム(4)を透明電極(3)と直
角に入射させてその切断を行なった。残りの一枚は本発
明と比較するために第3図示のように透光性基板(2)
の透明電極(3)にこれと直角方向にレーザ光(4)を
入射させてその切断を行なった。Example 1 A 13 cm thick tin oxide film with a film thickness of 500X was deposited on one surface.
Two square glass plates were prepared, and a pattern of transparent conductive film for manufacturing 16 calculator batteries (5-element series type) was formed thereon using a YAG laser. As shown in the second figure, a laser beam reflecting mirror (1) is arranged parallel to a transparent electrode (3) on the side opposite to the laser beam incident side of a transparent substrate (2), and the laser beam ( 4) was incident on the transparent electrode (3) at right angles to cut it. The remaining one is a transparent substrate (2) as shown in the third figure for comparison with the present invention.
A laser beam (4) was incident on the transparent electrode (3) in a direction perpendicular to the transparent electrode (3) to cut it.
両者のレーザパワーはIW、レーザビーム径25μmと
した。この場合の最大切断速度は15 cm / se
cであり、反射鏡を用いないときは、100m/SeC
であって、同じレーザ光で1.5倍の切断速度とするこ
とができた。このため16cm角の基板の処理時間は約
40秒であり反射鏡のないときの約1分に比べて大巾に
短縮できた。The laser power for both was IW and the laser beam diameter was 25 μm. The maximum cutting speed in this case is 15 cm/se
c, and when no reflector is used, 100m/SeC
Therefore, the cutting speed could be increased by 1.5 times using the same laser beam. Therefore, the processing time for a 16 cm square substrate was approximately 40 seconds, which was significantly shorter than the approximately 1 minute required without a reflecting mirror.
実施例2 実施例1と同じ条件で切断パワーを測定した。Example 2 Cutting power was measured under the same conditions as in Example 1.
本発明による方法と反射鏡を用いない方法の切断速度は
10 r、m/ Sec 、レーザビーム径25μmと
一定とした。The cutting speed of the method according to the present invention and the method not using a reflecting mirror was constant at 10 r, m/Sec, and the laser beam diameter was 25 μm.
本発明のこのときの切断パワーは0.7Wであり最低1
W必要とする反射鏡を用いない方法に比べて小さくでき
、したがってコストが約30%節約できた。The cutting power of the present invention at this time is 0.7W, which is at least 1
Compared to a method that does not use a reflecting mirror that requires W, it can be made smaller, and the cost can therefore be reduced by about 30%.
このように本発明によるときは、透光性基板のレーザ光
入射側と反対側にレーザ光反射鏡を配設し、レーザ光を
透光性基板上の透明膜に入射させ、その入射光と反射光
のパワーにより前記透明膜を切断するようにしたので、
従来のフォトエツチング法によるパターン形成方法に比
して大幅に工程を短縮でき低コストにできるとともに洗
浄工程が簡単であり、また廃液処理の必要がなく、更に
レーザ反射光を利用しなし)ものに比べて低パワーで加
工でき、切断速度を速くすることができる効果を有する
。In this way, according to the present invention, a laser beam reflecting mirror is disposed on the side opposite to the laser beam incident side of the transparent substrate, and the laser beam is made incident on the transparent film on the transparent substrate, and the incident light and Since the transparent film was cut by the power of the reflected light,
Compared to the conventional pattern forming method using photoetching, the process can be significantly shortened and costs can be reduced, the cleaning process is simple, there is no need for waste liquid treatment, and there is no need to use reflected laser light. It has the effect of being able to process with lower power and faster cutting speed.
第1図はガラス及び透明電極の光の波長に対する透過率
特性図、第2図は本発明の詳細な説明図、第3図は反射
光を利用しないノ々ターン形成法の説明図を示す。
tl)・・・レーザ光反射鏡 (2)・・・透光性基板
(3)・・・透 明 電 極 (4)・・・レーザ光外
2名FIG. 1 is a diagram showing the transmittance characteristics of glass and transparent electrodes with respect to the wavelength of light, FIG. 2 is a detailed explanatory diagram of the present invention, and FIG. 3 is an explanatory diagram of a knot-turn forming method that does not utilize reflected light. tl)...Laser light reflecting mirror (2)...Transparent substrate (3)...Transparent electrode (4)...2 people outside the laser beam
Claims (1)
ターンを形成する方法において、前記透光性基板のレー
ザ光入射側と反対側にレーザ光反射鏡を配設し、レーザ
入射光及びレーザ反射光のパワーにより前記透明膜を切
断することを特徴とする透明膜パターン形成方法。In a method of forming a pattern by cutting a transparent film formed on a transparent substrate with a laser beam, a laser beam reflecting mirror is disposed on the side opposite to the laser beam incident side of the transparent substrate, and the laser beam is and a transparent film pattern forming method, characterized in that the transparent film is cut by the power of laser reflected light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57118135A JPS599915A (en) | 1982-07-07 | 1982-07-07 | Forming method for transparent-film pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57118135A JPS599915A (en) | 1982-07-07 | 1982-07-07 | Forming method for transparent-film pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS599915A true JPS599915A (en) | 1984-01-19 |
Family
ID=14728911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57118135A Pending JPS599915A (en) | 1982-07-07 | 1982-07-07 | Forming method for transparent-film pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS599915A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53114669A (en) * | 1977-03-17 | 1978-10-06 | Toshiba Corp | Cutting method for semiconductor wafer |
-
1982
- 1982-07-07 JP JP57118135A patent/JPS599915A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53114669A (en) * | 1977-03-17 | 1978-10-06 | Toshiba Corp | Cutting method for semiconductor wafer |
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