JPH05196949A - Photoprocessing method for fine pattern - Google Patents

Abstract

PURPOSE:To enable selective processing of fine patterns without using a resist by emitting pulse lasers of a specific wavelength and irradiating a substrate through a glass mask constituted by selectively forming non-sublimatable metal or org. films on quartz, more preferably synthetic quartz which shields this wavelength. CONSTITUTION:The mask 5 of the fine patterns provided in tight contact with the synthetic quartz 4 is formed. The pulse laser beams of <=400nm wavelength are selectively transmitted by this mask 5. These pulse laser beams are transmitted through the one main surface of the substrate 1 in a vacuum to transfer the fine patterns on this one main surface, by which the substrate is selectively removed or deteriorated in properties. For example, CFT 2 of tin oxide added with fluorine or antimony is formed atop the glass substrate as the substrate. A laser beam source for light emission of <=400nm wavelength is used for the substrate 1 having the surface 2 to be worked. The mask constituted by selectively forming nickel 5 at 1500Angstrom thickness on the synthetic quartz 4 is used.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for selectively processing a transparent conductive film used in a solar cell, a liquid crystal display panel or the like with light.

[0002]

2. Description of the Related Art Regarding optical processing of a transparent conductive film, YAG laser light (wavelength 1.05 .mu.) Is mainly used as a laser processing technique. In the laser processing method using this wavelength, since its optical energy is 1.23 eV, tin oxide, which has a general optical energy band width of 3 to 4 eV, which is a transparent conductive film (hereinafter referred to as CTF), and oxide It does not have sufficient light absorption for indium (including ITO). Therefore, when laser processing,
The switch pulse light has an average of 0.5 to 1 W (light diameter 50 μ, focal length 40 nm, pulse frequency 3 KHz, pulse width 60
It must be processed by applying strong light energy (for n seconds). As a result, the CTF can be processed by this laser beam, but at the same time, microcracks are generated in the substrate provided below the CTF, for example, the glass substrate.

[0003]

The fine cracks in the underlying substrate in the processing using the YAG laser have a shape similar to the circumference of the laser beam and are formed in a "scale" shape.
Furthermore, it has been completely impossible to selectively form a large number of fine patterns having a width of 1 to 5 μm on the same plane. Further, after the irradiation, the CTF material in the processed portion was not sufficiently pulverized, so that etching had to be performed with a CTF etching solution (hydrogen fluoride-based solution).

[0004]

The present invention is to solve the above-mentioned problems, and as its irradiation light, a pulse laser having a wavelength of 400 nm or less (energy is 3.1 eV or more) is irradiated, By irradiating quartz through a glass mask in which a non-sublimable metal or an organic film is selectively formed on quartz, preferably synthetic quartz, which transmits this wavelength,
It became possible to selectively process a fine pattern with a width of 5 μm without using a resist.

[0005]

As a result, the CTF fine pattern can be selectively removed without damaging the underlying glass plate, and ultrasonic cleaning with a cleaning liquid such as alcohol or acetone is sufficient.

[0006]

【Example】

Example 1 A glass substrate (1) having a thickness of 1.1 mm was used as a substrate, and a CTF (2) of tin oxide having fluorine or antimony added to its upper surface was formed to a thickness of 0.3 μ. It was formed as shown in FIG. An excimer laser (manufactured by Questec Inc.) was used as a laser light source for emitting light having a wavelength of 400 nm or less on the substrate having the surface to be processed. The pulsed light was 248 mm using KrF. The mask used was a synthetic quartz (4) with nickel (5) selectively formed to a thickness of 1500 Å. Pulse width 20n
Second, repetition frequency 50Hz, average output 17W / 16 ×
It was set to 20 mm. In an area larger than this, irradiation was performed while repeatedly moving this size. Then, with this tin oxide, the irradiated surface (3) became completely clouded by the irradiation of one pulsed light, and the CTF became fine powder. This was subjected to ultrasonic cleaning (frequency: 29 KHz) with an aqueous acetone solution for about 1 to 10 minutes to remove the CTF. The underlying soda glass was not damaged at all. It was possible to remove a 3 μ wide pattern as a pattern.

Example 2 Non-single crystal semiconductor (main component silicon) to which hydrogen or fluorine was added (ITO (indium oxide containing 5% by weight of tin oxide) on (1) of FIG. 1A) (2) was formed to a thickness of 1000 Å by an electron beam vapor deposition method as a surface to be processed.
As shown in (B), a mask was provided by selectively forming a polyimide organic resin (5) on synthetic quartz. The mask and the substrate were spaced apart from each other by 1 to 10 μm. Furthermore, this is under vacuum (vacuum degree of 10 ^-1 torr or less) and 400n
Pulsed light having a wavelength of m or less was added. Wavelength is 351 nm
(XeF). Pulse width 20nsec, average output 20W
/ 16 × 20 mm ² . Then, the ITO on the surface to be processed was sublimated and the underlying semiconductor was not damaged, so that a fine pattern was formed and the remaining ITO could be insulated.
Such a pattern has been very convenient for forming electrodes in a liquid crystal display device.

[Brief description of drawings]

FIG. 1 shows a manufacturing method of the present invention.

Claims (1)

[Claims] 1. A mask having a fine pattern formed in close contact with synthetic quartz is formed, and a pulse laser beam having a wavelength of 400 nm or less is selectively transmitted by the mask, and the pulse laser beam is applied to one main surface of a substrate. A method for optical processing of a fine pattern, characterized in that the fine pattern is transferred to the first main surface and transferred to the one main surface to selectively remove or alter the quality.