JPS599910A - 薄膜半導体の製造方法 - Google Patents

薄膜半導体の製造方法

Info

Publication number
JPS599910A
JPS599910A JP57118774A JP11877482A JPS599910A JP S599910 A JPS599910 A JP S599910A JP 57118774 A JP57118774 A JP 57118774A JP 11877482 A JP11877482 A JP 11877482A JP S599910 A JPS599910 A JP S599910A
Authority
JP
Japan
Prior art keywords
silicon
thin film
substrate
gas
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57118774A
Other languages
English (en)
Japanese (ja)
Other versions
JPS639743B2 (enrdf_load_stackoverflow
Inventor
Toshio Kamisaka
上坂　外志夫
Kazu Yamanaka
山中　計
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP57118774A priority Critical patent/JPS599910A/ja
Publication of JPS599910A publication Critical patent/JPS599910A/ja
Publication of JPS639743B2 publication Critical patent/JPS639743B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57118774A 1982-07-08 1982-07-08 薄膜半導体の製造方法 Granted JPS599910A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57118774A JPS599910A (ja) 1982-07-08 1982-07-08 薄膜半導体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57118774A JPS599910A (ja) 1982-07-08 1982-07-08 薄膜半導体の製造方法

Publications (2)

Publication Number Publication Date
JPS599910A true JPS599910A (ja) 1984-01-19
JPS639743B2 JPS639743B2 (enrdf_load_stackoverflow) 1988-03-01

Family

ID=14744737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57118774A Granted JPS599910A (ja) 1982-07-08 1982-07-08 薄膜半導体の製造方法

Country Status (1)

Country Link
JP (1) JPS599910A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS639743B2 (enrdf_load_stackoverflow) 1988-03-01

Similar Documents

Publication Publication Date Title
US4514437A (en) Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
US4443488A (en) Plasma ion deposition process
US4416755A (en) Apparatus and method for producing semiconducting films
US4702965A (en) Low vacuum silicon thin film solar cell and method of production
EP0029747A1 (en) An apparatus for vacuum deposition and a method for forming a thin film by the use thereof
JP3128573B2 (ja) 高純度薄膜の形成方法
JPS599910A (ja) 薄膜半導体の製造方法
JPH079059B2 (ja) 炭素薄膜の製造方法
JPH0131289B2 (enrdf_load_stackoverflow)
JPS6158968B2 (enrdf_load_stackoverflow)
JPS6157694B2 (enrdf_load_stackoverflow)
JPS6146046B2 (enrdf_load_stackoverflow)
JPS5863129A (ja) 薄膜半導体の製造方法
JPH04285154A (ja) 炭素薄膜の作成方法
JPH0113213B2 (enrdf_load_stackoverflow)
JP3102540B2 (ja) 低水素量非晶質シリコン半導体薄膜の形成方法
JPS6158967B2 (enrdf_load_stackoverflow)
JPS5996718A (ja) 薄膜半導体の製造方法
JPS6025225A (ja) 薄膜半導体の製造方法
JP2971541B2 (ja) 薄膜形成装置
JPS5837247B2 (ja) アモルフアスシリコンの製造方法
CN119913470A (zh) 一种用于提高硅晶片性能的中熵合金薄膜及其制备方法
JPH04116155A (ja) 薄膜の形成方法
JPH05195210A (ja) 集積回路、その製造方法およびその薄膜形成装置
JP2002069616A (ja) アナターゼ型酸化チタン薄膜の製造方法