JPS5997030A - Pressure detection hybrid integrated circuit - Google Patents
Pressure detection hybrid integrated circuitInfo
- Publication number
- JPS5997030A JPS5997030A JP57207159A JP20715982A JPS5997030A JP S5997030 A JPS5997030 A JP S5997030A JP 57207159 A JP57207159 A JP 57207159A JP 20715982 A JP20715982 A JP 20715982A JP S5997030 A JPS5997030 A JP S5997030A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- pressure sensor
- attached
- pressure
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0069—Electrical connection means from the sensor to its support
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は圧力検出用の混成集積回路に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a hybrid integrated circuit for pressure sensing.
従来の圧力検出用の混成集積回路は第１図および第２図
に示す如く構成されている。すなわち、図中１はアルミ
ナセラミソク等の電気絶縁性材料からなる基板である。A conventional hybrid integrated circuit for pressure detection is constructed as shown in FIGS. 1 and 2. That is, numeral 1 in the figure is a substrate made of an electrically insulating material such as alumina ceramic material.
そして、この基板１の中央部には圧力センサ２が取付け
られておシ、基板１に形成された圧力導入口３を介して
この圧力センサ２に測定すべき圧力が作用するように構
成されている。この圧力センサ２はたとえば半導体ピエ
ゾ抵抗効果を用いた拡散形半導体圧力センサであって、
複数組のゲージを内蔵している。また、この基板上には
回路部品たとえば回路定数の設定のための抵抗トリミン
グ用の抵抗体４，５その他増幅，温度補償，直線性補正
等をおこなう回路部品６・・・が取付けられている。そ
して、上記圧力センサ２はこの混成集積回路を組立る際
に圧力特性を測定し、複数組のゲージのうちから特性の
優れたゲージが選択され、このゲージが使用される。そ
して、この選択されたケ８−ジを使用するには圧力セン
サ２上に設けられたポンディングパッドと基板１上の導
電膜７・・・とを接続するボンディングワイヤ８・・・
の位置を変更することによっておこなう。A pressure sensor 2 is attached to the center of the substrate 1, and the pressure to be measured is applied to the pressure sensor 2 through a pressure introduction port 3 formed in the substrate 1. There is. This pressure sensor 2 is, for example, a diffusion type semiconductor pressure sensor using a semiconductor piezoresistance effect,
Contains multiple sets of gauges. Further, circuit components such as resistors 4 and 5 for resistor trimming for setting circuit constants, and circuit components 6 for performing amplification, temperature compensation, linearity correction, etc. are mounted on this board. Then, the pressure sensor 2 measures the pressure characteristics when assembling this hybrid integrated circuit, and a gauge with excellent characteristics is selected from a plurality of sets of gauges, and this gauge is used. To use this selected cage, bonding wires 8 . . . connect the bonding pads provided on the pressure sensor 2 and the conductive films 7 .
This is done by changing the position of.
そして、ボンディングワイヤ８・・・の取付、抵抗体４
，５のトリミングが終了したら基板ｌに樹脂コーティン
グをおこない、回路部品４，５゜６・・・を保護すると
ともに保礁カバー９を取付ける。Then, the bonding wire 8... is attached, and the resistor 4 is attached.
, 5 is completed, the board 1 is coated with resin to protect the circuit components 4, 5, 6, . . . and a reef cover 9 is attached.
前述の圧力センサ２の特性を測定する場合には圧力導入
口３から圧力センサ２に圧力を作用させなければならな
い。しかし、この場合にはまだ基板１に樹脂コーティン
グがなされていない。このため基板１上の回路部品４，
５．６・・・を損傷しないように特別の注意を必要とし
、また専用の治具を必要とする等作業が面倒であった。When measuring the characteristics of the pressure sensor 2 described above, pressure must be applied to the pressure sensor 2 from the pressure introduction port 3. However, in this case, the substrate 1 has not yet been coated with resin. Therefore, the circuit components 4 on the board 1,
The work was troublesome, requiring special care not to damage 5.6..., and requiring special jigs.
本発明は以上の事情にもとづいてなされたもので、その
目的とするところは圧力センサの特性の測定を容易とし
、組立作業を能率化できる圧力検出混成集積回路を提供
することにある。The present invention has been made based on the above circumstances, and its purpose is to provide a pressure detection hybrid integrated circuit that facilitates measurement of pressure sensor characteristics and streamlines assembly work.
本発明は第１の基板と、この第１の基板に取付けられた
複数のゲージを有する圧力センサと、上記第１の基板に
設けられ上記圧力センサの各ゲージにそれぞれ接続され
た複数群の接続用電極と、上記第１の基板に重ね合され
る第２の基板と、この第２の基板に取付けられた回路部
品と、上記第２の基板に取付けられ上記回路部品に接続
されるとともにこの第２の基板と上記第１の基板を重ね
合せる場合の相対的位置関係を変えることによって上記
第１の基板上の任意の群の接続用電極に選択的に接続さ
れる接続用電極とを具備したものである。したがって組
立の際には第１の基板に圧力センサを取付け、必要に応
じて樹脂コーティングをおこなったのちこの圧力センサ
に圧力を加えてその特性を測定し、特性の優れたゲージ
を選択する。そしてこの第１の基板に第２の基板を重ね
合せ、この際に第１の基板と第２の基板の相対的位置を
選択し、第１の基板上の複数群の接続用電極のうち選択
されたゲージに対応する群の接続用電極と第２の基板上
の接続用電極とを接続する。したがって、圧力センサの
特性を測定する際に回路部品を損傷することはなく、圧
力センサの特性の測定が容易となシ、また第１の基板と
第２の基板を重ね合せる際の両者の相対的位置を変える
だけで選択されたゲージと回路部品との接続ができる。The present invention includes a first substrate, a pressure sensor having a plurality of gauges attached to the first substrate, and a plurality of groups of connections provided on the first substrate and respectively connected to each gauge of the pressure sensor. a second substrate overlaid on the first substrate, a circuit component attached to the second substrate, and a circuit component attached to the second substrate and connected to the circuit component. A connection electrode that is selectively connected to an arbitrary group of connection electrodes on the first substrate by changing the relative positional relationship when the second substrate and the first substrate are overlapped. This is what I did. Therefore, during assembly, a pressure sensor is attached to the first substrate, resin coating is applied if necessary, pressure is applied to the pressure sensor, its characteristics are measured, and a gauge with excellent characteristics is selected. Then, a second substrate is superimposed on this first substrate, and at this time, the relative positions of the first substrate and the second substrate are selected, and a selection is made from among the plurality of groups of connection electrodes on the first substrate. The connecting electrodes of the group corresponding to the gauges that have been connected are connected to the connecting electrodes on the second substrate. Therefore, when measuring the characteristics of the pressure sensor, the circuit components are not damaged, and the characteristics of the pressure sensor can be easily measured. The selected gauge and circuit components can be connected by simply changing the target position.
したがって組立作業がきわめて容易かつ能率的となるも
のである。Therefore, assembly work becomes extremely easy and efficient.
以下第３図ないし第７図を参照して本発明の一実施例を
説明する。An embodiment of the present invention will be described below with reference to FIGS. 3 to 7.
図中１０１は第１の基板である。この第１の基板１０１
はアルミナセラミック等の電気絶縁性材料で形成され、
正多角形たとえば正方形の板状をなしている。そして、
この第１の基板１０ノの中央部には圧力センサ１０２が
取付けられている。この圧力センサ１０２はエツチング
によシ形成されたダイヤフラム部と複数組の歪ゲージ（
図示せず）が設けられており、ダイヤフラム部の変形を
これらゲージで検出することによって圧力の検出をおこ
なうように構成されている。そして、この圧力センサ１
０２は金−シリコン共晶合金接合等によシ第１の基板１
０１に気密に接合されている。また、この第１の基板１
０１には圧力導入口１０３が形成されておシ、この圧力
導入口１０３を介して圧力ゼンサ１０２に測定すべき圧
力が作用するように構成されている。また、この第１の
基板１０１の各辺の縁部にはそれぞれ１群ずつ合計４群
の接続用電極１０４・・・が設けられている。そして、
上記圧力センサ１０２のゲージはボンディングワイヤ１
０５・・・、導電膜１０６・・・を介して各組毎に各群
の接続用電極１０４・・・にそれぞれ接続されている。In the figure, 101 is a first substrate. This first substrate 101
is made of electrically insulating material such as alumina ceramic,
It is a regular polygon, for example, a square plate. and,
A pressure sensor 102 is attached to the center of the first substrate 10. This pressure sensor 102 consists of a diaphragm portion formed by etching and a plurality of sets of strain gauges (
(not shown), and is configured to detect pressure by detecting deformation of the diaphragm portion with these gauges. And this pressure sensor 1
02 is the first substrate 1 made by gold-silicon eutectic alloy bonding etc.
01 hermetically. In addition, this first substrate 1
A pressure introduction port 103 is formed in the pressure sensor 101, and the pressure to be measured is applied to the pressure sensor 102 through the pressure introduction port 103. Furthermore, a total of four groups of connection electrodes 104 . . . are provided on each edge of the first substrate 101, one group for each side. and,
The gauge of the pressure sensor 102 is the bonding wire 1
05..., each set is connected to the connection electrode 104 of each group via the conductive film 106....
また、１１０は第２の基板である。この第２の基板１１
０は第１の基板１０１と同様にアルミナセラミック等の
電気絶縁性材料で形成され、また第１の基板１０１と同
形状の正方形をなしており、第１の基板１０１と重ね合
されるように構成されている。そして、この第２の基板
１１０の第１の基板１０１と衝合される側の面すなわち
衝合側面の一辺の縁部には一群の接続用電極１１１・・
・が設けられている。そして、これら接続用電極１１１
・・・は第１の基板１０１と第２の基板１１０が重ね合
された場合に第１の基板１０１：・のいずれかの群の接
続用電極１０４・・・に接触するように構成されておシ
、この第１の基板１０１と第２の基板１１０を重ね合せ
る際の両者の相対的位置関係を選択することによシこの
第２の基板１１０の接続用電極１１１・・・を第１の基
板１０１の任意の群の接続用電極１０４・・・に接触す
るように構成されている。なお、これら第１の基板１０
１の接続用電極１０４・・・と第２の基板１１０の接続
用電極１１１・・・とけ互にはんだ付され、完全な電気
的接続がなされる。また、上記第２の基板１１０の衝合
側面の中央部には四部１１２が形成されておシ、この凹
部１１２内には回路部品１１３・・・が取付けられてい
る。また、この第２の基板１１０の衝合側面と反対側の
面には回路部品のうち抵抗トリミング用の抵抗体１１４
，１１５が設けられている。そして、この抵抗体１１４
，１１５その他の回路部品１１３・・・は上記接続用電
極１１１・・・に接続されている。また、この第２の基
板１１０には外部との接続用の端子電極１１６・・・が
設けられている。Further, 110 is a second substrate. This second substrate 11
0 is made of an electrically insulating material such as alumina ceramic like the first substrate 101, and has the same square shape as the first substrate 101, so that it is overlapped with the first substrate 101. It is configured. A group of connection electrodes 111 are provided on the edge of the side of the second substrate 110 that abuts against the first substrate 101, that is, the abutting side.
・ is provided. And these connection electrodes 111
... is configured to contact the connection electrode 104 of any group of the first substrate 101: when the first substrate 101 and the second substrate 110 are superimposed. By selecting the relative positional relationship between the first substrate 101 and the second substrate 110 when overlapping them, the connecting electrodes 111 of the second substrate 110 can be connected to the first substrate 110. It is configured to contact any group of connection electrodes 104 . . . on the substrate 101 . Note that these first substrates 10
The connection electrodes 104 of the first substrate 110 and the connection electrodes 111 of the second substrate 110 are soldered to each other to establish a complete electrical connection. Furthermore, a four part 112 is formed in the center of the abutting side surface of the second board 110, and circuit components 113 are mounted within this recess 112. Further, on the surface opposite to the abutting side surface of the second substrate 110, a resistor 114 for resistor trimming among the circuit components is provided.
, 115 are provided. And this resistor 114
, 115 and other circuit components 113... are connected to the connection electrodes 111.... Further, this second substrate 110 is provided with terminal electrodes 116 for connection with the outside.
以上の如く構成された一実施例の組立は以下の如くおこ
なう。The assembly of the embodiment constructed as described above is carried out as follows.
まず第１の基板１０１に圧力センサ１０２を取付け、必
要に応じて樹脂コーティングをおこなう。次にこの圧力
センサ１０２に圧力を加え、その特性を測定し、特性の
最も優れたゲージを選択する。この場合、第１の基板１
０１には回路部品が取付けられておらず、まだ必要に応
じて’Ｍ ＢＭココ−ィングされているので回路部品そ
の他を損傷することはなく、よってこの特性の測定を容
易におこなうことができる。次にこの第１の基板１０１
に第２の基板１１０を重ね合せる。この場合第１の基板
１０１と第２の基板１１０の相対的位置を選択し、第２
の基板１１０上の接続用電極１１１・・・を第１の基板
１０１の接続用電極１０４・・・のうち選択されたゲー
ジに接続されている群の接続用電極１０４・・・に接触
させる。そして、これら接続用電極１０４・・・。First, the pressure sensor 102 is attached to the first substrate 101, and resin coating is performed as necessary. Next, pressure is applied to this pressure sensor 102, its characteristics are measured, and the gauge with the best characteristics is selected. In this case, the first substrate 1
Since no circuit components are attached to 01 and MBM cocoing is still performed as necessary, there is no damage to the circuit components or the like, and therefore this characteristic can be easily measured. Next, this first substrate 101
The second substrate 110 is superimposed on the second substrate 110. In this case, the relative positions of the first substrate 101 and the second substrate 110 are selected, and the second
The connection electrodes 111... on the substrate 110 of the first substrate 101 are brought into contact with the connection electrodes 104... of the group connected to the selected gauge among the connection electrodes 104... of the first substrate 101. And these connection electrodes 104...
１１１・・・を互にはんだ付する。次に第２の基板１１
０上にある抵抗体１１４，１１５のトリミングをおこな
い、回路定数等の設定をおこなう。111... are soldered to each other. Next, the second substrate 11
Trim the resistors 114 and 115 on the 0, and set circuit constants, etc.
この場合、圧力センサ１０２や回路部品１１３・・・は
第２の基板１１０と第１の基板１０１で囲まれ、外部か
ら保護されているのでこの抵抗体１１４．１１５のトリ
ミングはサンドブラスト法、陽極酸化法等トリミング後
の洗浄が必要なトリミング法をおこなうことができ、ま
たトリミング中の取扱も容易となる。そしてトリミング
が終了したら第１の基板１０１および第２の基板１１０
の全面に樹脂コーティングをおこなう。また、この一実
施例は第１の基板１０１と第２の基板１１０とが同形状
であるから、圧力センサ１０２の特性測定用の治具と組
立完成後の試験用の治具を共用することができる。In this case, the pressure sensor 102 and circuit components 113 are surrounded by the second substrate 110 and the first substrate 101 and protected from the outside, so the trimming of the resistors 114 and 115 is carried out by sandblasting, anodic oxidation, etc. Trimming methods that require cleaning after trimming can be performed, and handling during trimming is also facilitated. After the trimming is completed, the first substrate 101 and the second substrate 110 are removed.
Apply resin coating to the entire surface. Furthermore, in this embodiment, since the first substrate 101 and the second substrate 110 have the same shape, the jig for measuring the characteristics of the pressure sensor 102 and the jig for testing after assembly are completed can be shared. I can do it.
上述の如く本発明は第１の基板と、この第１の基板に取
付けられた複数のゲージを有する圧力センサと、上記第
１の基板に設けられ上記圧力センサの各ゲージにそれぞ
れ接続された複数群の接続用電極と、上記第１の基板に
重ね合される第２の基板と、この第２の基板に取付けら
れた回路部品と、上記第２の基板に取付けられ上記回路
部品に接続されるとともにこの第２の基板と上記第１の
基板を重ね合せる場合の相対的位置関係を変えることに
よって上記第１の基板上の任意の群の接続用電極に選択
的に接続される接続用電極とを具備したものである。し
たがって組立の際には第１の基板に圧力センサを取付け
、必要に応じて樹脂コーティングをおこなったのちこの
圧力センサに圧力を加えてその特性を測定し、特性の優
れたダーツを選択する。As described above, the present invention includes a first substrate, a pressure sensor having a plurality of gauges attached to the first substrate, and a plurality of pressure sensors provided on the first substrate and respectively connected to each gauge of the pressure sensor. a group of connection electrodes, a second substrate overlaid on the first substrate, a circuit component attached to the second substrate, and a circuit component attached to the second substrate and connected to the circuit component. and a connecting electrode that is selectively connected to an arbitrary group of connecting electrodes on the first substrate by changing the relative positional relationship when the second substrate and the first substrate are stacked together. It is equipped with the following. Therefore, during assembly, a pressure sensor is attached to the first substrate, resin coating is applied if necessary, pressure is applied to the pressure sensor, its characteristics are measured, and darts with excellent characteristics are selected.
そしてこの第１の基板に第２の基板を重ね合せ、この際
に第１の基板と第２の基板の相対的位置を選択し、第１
の基板上の検数群の接続用電極のうち選択されたｒ−ジ
に対応する群の接続用電極と第２の基板上の接続用電極
とを接続する。Then, a second substrate is superimposed on this first substrate, and at this time, the relative positions of the first substrate and the second substrate are selected, and the
The connecting electrodes of the group corresponding to the selected r-ge among the connecting electrodes of the counting group on the substrate are connected to the connecting electrodes on the second substrate.
したがって、圧力センサの特性を測定する際に回路部品
を損傷することはなく、圧力センサの特性の測定が容易
となり、また第１の基板と第２の基板を重ね合せる際の
両者の相対的位置を変えるだけで選択されたダーツと回
路部品との接続ができる。したがって組立作業がきわめ
て容易かつ能率的となる等その効果は大である。Therefore, when measuring the characteristics of the pressure sensor, the circuit components are not damaged, and the characteristics of the pressure sensor can be easily measured. You can connect the selected darts and circuit components by simply changing the . Therefore, the effects are great, such as making assembly work extremely easy and efficient.
第１図および第２図は従来例を示し、第１図は平面図、
第２図は縦断面図である。第３図ないし第７図は本発明
の一実施例を示し、第３図は縦断面図、第４図は第３図
の■−■矢視図、第５図は力３図のｖ−■矢視図、第６
図は第３図のＶｌ −Ｖｌ矢視図、第７図は分解斜視図
である。
１０１・・・第１め基板、１０２・・・圧力センサ、１
０４・・・接続用電極、１１０・・・第２の基板、１１
１・・・接続用電極、１１３・・・回路部品、１１４．
１１５・・・抵抗体（回路部品）。
出願人代理人 弁理士 鈴 江 武 彦第１ｍｌ
第２図
第３図
第５図
第６図
第７図
１７３Figures 1 and 2 show a conventional example; Figure 1 is a plan view;
FIG. 2 is a longitudinal sectional view. 3 to 7 show an embodiment of the present invention, FIG. 3 is a longitudinal cross-sectional view, FIG. 4 is a view taken along arrows ■-■ in FIG. 3, and FIG. 5 is a v-- ■Arrow view, 6th
The figure is a view taken along the line Vl-Vl in FIG. 3, and FIG. 7 is an exploded perspective view. 101... First substrate, 102... Pressure sensor, 1
04... Connection electrode, 110... Second substrate, 11
1... Connection electrode, 113... Circuit component, 114.
115...Resistor (circuit component). Applicant's agent Patent attorney Takehiko Suzue 1ml Figure 2 Figure 3 Figure 5 Figure 6 Figure 7 173
Claims (2)
数のゲージを有する圧力センサと、上記第１の基板に設
けられ上記圧力センサの各ゲージにそれぞれ接続された
複数群の接続用電極と、上記第１の基板に重ね合される
第２の基板と、この第２の基板に取付けられた回路部品
と、上記第２の基板に取付けられ上記回路部品に接続さ
れるとともにこの第２の基板と上記第１の基板を重ね合
せる場合の相対的位置関係を変えることによって上記第
１の基板上の任意の群の接続用電極に選択的に接続され
る接続用電極とを具備したことを特徴とする圧力検出混
成集積回路。(1) A first substrate, a pressure sensor having a plurality of gauges attached to the first substrate, and a plurality of groups of connections provided on the first substrate and respectively connected to each gauge of the pressure sensor. a second substrate overlaid on the first substrate, a circuit component attached to the second substrate, and a circuit component attached to the second substrate and connected to the circuit component. A connection electrode that is selectively connected to an arbitrary group of connection electrodes on the first substrate by changing the relative positional relationship when the second substrate and the first substrate are overlapped. A pressure sensing hybrid integrated circuit characterized by:
記第１の基板に重ね合される面と反対側の面に取付けら
れていることを特徴とする特許 積回路。(2) A patented product circuit characterized in that a resistor for resistor trimming among the circuit components is attached to a surface opposite to a surface overlaid on the first substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57207159A JPS5997030A (en) | 1982-11-26 | 1982-11-26 | Pressure detection hybrid integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57207159A JPS5997030A (en) | 1982-11-26 | 1982-11-26 | Pressure detection hybrid integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5997030A true JPS5997030A (en) | 1984-06-04 |
| JPH0348458B2 JPH0348458B2 (en) | 1991-07-24 |
Family
ID=16535197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57207159A Granted JPS5997030A (en) | 1982-11-26 | 1982-11-26 | Pressure detection hybrid integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5997030A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63118629A (en) * | 1986-11-06 | 1988-05-23 | Sumitomo Electric Ind Ltd | Adjusting method for bridge circuit of semiconductor pressure sensor |
| JPS63118628A (en) * | 1986-11-06 | 1988-05-23 | Sumitomo Electric Ind Ltd | Adjusting method for bridge circuit of semiconductor pressure sensor |
| EP0543430A2 (en) * | 1991-11-20 | 1993-05-26 | Delco Electronics Corporation | Pressure sensor and method of assembly thereof |
| JP2010008434A (en) * | 2009-10-15 | 2010-01-14 | Hokuriku Electric Ind Co Ltd | Semiconductor pressure sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5629708U (en) * | 1979-08-10 | 1981-03-20 |
-
1982
- 1982-11-26 JP JP57207159A patent/JPS5997030A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5629708U (en) * | 1979-08-10 | 1981-03-20 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63118629A (en) * | 1986-11-06 | 1988-05-23 | Sumitomo Electric Ind Ltd | Adjusting method for bridge circuit of semiconductor pressure sensor |
| JPS63118628A (en) * | 1986-11-06 | 1988-05-23 | Sumitomo Electric Ind Ltd | Adjusting method for bridge circuit of semiconductor pressure sensor |
| EP0543430A2 (en) * | 1991-11-20 | 1993-05-26 | Delco Electronics Corporation | Pressure sensor and method of assembly thereof |
| JP2010008434A (en) * | 2009-10-15 | 2010-01-14 | Hokuriku Electric Ind Co Ltd | Semiconductor pressure sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0348458B2 (en) | 1991-07-24 |
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