JPS5994856A - Composite circuit device and mounting method thereof - Google Patents

Composite circuit device and mounting method thereof

Info

Publication number
JPS5994856A
JPS5994856A JP57206697A JP20669782A JPS5994856A JP S5994856 A JPS5994856 A JP S5994856A JP 57206697 A JP57206697 A JP 57206697A JP 20669782 A JP20669782 A JP 20669782A JP S5994856 A JPS5994856 A JP S5994856A
Authority
JP
Japan
Prior art keywords
substrate
board
semiconductor chip
circuit device
terminal electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57206697A
Other languages
Japanese (ja)
Inventor
Ryo Kimura
涼 木村
Kazuyuki Nonaka
野中 和志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57206697A priority Critical patent/JPS5994856A/en
Publication of JPS5994856A publication Critical patent/JPS5994856A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/647Resistive arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/181Printed circuits structurally associated with non-printed electric components associated with surface mounted components

Abstract

PURPOSE:To form integrally a resistance element and a capacitor with a semiconductor element, etc., in one body by a method wherein a carrier substrate mounted with a semiconductor chip and a lamination type dielectric substrate having a capacitor function are displaced opposite to each other and are performed an electric connection. CONSTITUTION:A resistance element is constituted on the surface of the convex part of a carrier substrate 1 made of alumina and constituted with an electrode pattern, using a thick film or thin film forming technique, and a semiconductor chip element 2 is mounted on the concave part 1a of the substrate 1 in order to seal with a resin 5 for sealing. A lamination type dielectric substrate 3 is alternately laminated with a dielectric layer 8 and an internal electrode 4 using material such as a BaTiO2 family and a TiO2 family and manufactured by firing. The internal electode 4 constitutes a capacitor. A printing substrate 12 constituted by patterning, the carrier substrate 1 and the lamination type dielectric substrate 3 are joined with adhesives 10, dipped in soldering, and the terminal electrodes between the substrates 1 and 3 are mutually connected by soldersings 11.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は高密度の複合回路装置及びその実装方法に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a high-density composite circuit device and its mounting method.

従来例の構成とその問題点 近年m子回路の小型高密度化は半導体素子の進歩に伴っ
て大きく進歩してきた。しかしながらリニアICにおい
ては高精度の抵抗、大容量のコンデンサ等の外付は個別
部品が用いられている。シリコンチップの中に取り入れ
ることが困難な抵抗、コンデンサ等の部品を効率良く複
合化し、小型高密度化を連成する複合回路装置の出現が
強く望まれている。従来小型高密度化を要求される電子
回路においてはチップ抵抗、チップコンデンサといった
小型化個別部品を用いて、同じく小型化パッケージされ
た能動素子と共にプリント基板に実装するチップマウン
ト法が一般化している。しかし、これらチップ部品の小
型化にも限度があり、システム全体の小型化のネックと
もなっているし、又部品点数が多く管理面や組立作業性
においても難があるし、接続箇所が多くて信頼性に乏し
い欠点もある。更に所謂厚膜集積回路のようにアルミナ
基板上に4体、抵抗体、半導体チップ、コンデンサチッ
プ、外部リード等を連続的に付加して、最後に外装を施
すような複合回路装置もある。これはかなりの高集積度
は期待できるが、各構成要素を連続的に付加してい(プ
ロセスであり、累積歩留りが悪くなるし、民生用電子機
器に使用するには高価すぎる欠点があった。更にマイク
ロモジュール方式のように標準化されたウェハを構成要
素部品として複数枚積層し、各端子電極間を複数本のワ
イヤを用いて相互配線した後、外装を施した三次元構成
の複合回路装置も提案された。これは複雑な組立工程を
必要とするし、接続箇所も多い等、コストメリットが生
じないことから現在では全く使用例は見られない。
Conventional Structure and Problems There has been great progress in recent years in miniaturizing and increasing the density of m-electron circuits as semiconductor devices have progressed. However, in linear ICs, individual components are used for external components such as high-precision resistors and large-capacity capacitors. There is a strong desire for the emergence of a composite circuit device that efficiently combines components such as resistors and capacitors that are difficult to incorporate into a silicon chip, thereby achieving smaller size and higher density. Conventionally, in electronic circuits that require compactness and high density, a chip mounting method has become common, in which miniaturized individual components such as chip resistors and chip capacitors are used and mounted on a printed circuit board together with active elements that are also packaged in a miniaturized manner. However, there are limits to the miniaturization of these chip components, which is a bottleneck in miniaturizing the entire system.Also, the large number of components makes it difficult to manage and assemble, and there are many connections, making it unreliable. There is also a disadvantage of lack of sex. Furthermore, there is also a composite circuit device, such as a so-called thick film integrated circuit, in which four elements, a resistor, a semiconductor chip, a capacitor chip, an external lead, etc. are successively added to an alumina substrate, and finally an exterior is applied. Although this can be expected to have a fairly high degree of integration, it has the drawbacks that each component is added sequentially (a process), resulting in poor cumulative yield and being too expensive to be used in consumer electronic devices. Furthermore, there are composite circuit devices with a three-dimensional structure, such as the micromodule system, in which multiple standardized wafers are stacked as component parts, each terminal electrode is interconnected using multiple wires, and then an exterior is applied. This method requires a complicated assembly process, has many connection points, and has no cost benefits, so it is currently not used at all.

発明の目的 本発明は上記従来の欠点を解消するもので、IC化困難
な抵抗やコンデンサをも半導体集子等と一体化した複合
回路装置及びその実装方法を安価に提供することを目的
とする。
Purpose of the Invention The present invention solves the above-mentioned conventional drawbacks, and aims to provide a composite circuit device that integrates resistors and capacitors that are difficult to integrate with semiconductor chips, etc., and a method for mounting the same at low cost. .

発明の構成 上記目的を達成するため、本発明の複合回路装置は、端
子電極を有した凹状絶縁板のくぼみに半導体チップを実
装したキャリヤ基板と、内部電極及び誘電体層とを交互
に積層焼結し複数個のコンデンサ機能を有して縁端面に
引出端子電極を設けた積層型誘電体基板とを対向配置さ
せ、半田によって両糸板間の任意の端子電極の電気的接
続を施したものである。又その実装方法は、キャリヤ基
板と積層型誘電体基板とプリント配線基板の端子電極を
対向配置させ、各基板間を接着剤にて機械的に固定した
後、半田によって相互接続を一括して行なうものである
Structure of the Invention In order to achieve the above object, the composite circuit device of the present invention is constructed by alternately laminating and firing a carrier substrate in which a semiconductor chip is mounted in the recess of a concave insulating plate having terminal electrodes, internal electrodes and a dielectric layer. A laminated dielectric substrate that has multiple capacitor functions and has lead-out terminal electrodes on its edge surface is placed facing each other, and any terminal electrodes between the two thread plates are electrically connected by soldering. It is. The mounting method is to arrange the terminal electrodes of the carrier board, laminated dielectric board, and printed wiring board facing each other, mechanically fix each board with adhesive, and then interconnect them all at once by soldering. It is something.

実施例の説明 以下、本発明の一実施例について、図面に基づいて説明
する。第1図は本発明の複合回路装置を示し、(1)は
アルミナ製のキャリヤ基板、(2)は半導体チップ素子
、(3ンは積層型誘導体基板、(4)は内部電極、(5
)は半導体チップ素子(2)を封止するための樹脂、(
6)は配線用電極である。本発明は凹状のくぼんだ平面
部に半導体チップ素子(2)をマウントしてなる。キャ
リヤ基板(1)と内部電極(4)によって複数個のコン
デンサを有した積層型誘電体基板(3)とを独立の基板
として作成し、最後に両基板(1) (3)を一体化し
て機能回路装置を構成することに特徴がある。次に各基
板について詳述する。キャリヤ基は一般的にアルミナが
用いられる。本発明ではアルミナ基板に凹状の構造を有
している。この形状は三層積層によるチップキャリヤも
考えられる。
DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a composite circuit device of the present invention, (1) is an alumina carrier substrate, (2) is a semiconductor chip element, (3) is a laminated dielectric substrate, (4) is an internal electrode, (5) is a
) is a resin for sealing the semiconductor chip element (2), (
6) is a wiring electrode. In the present invention, a semiconductor chip element (2) is mounted on a concave flat surface. A carrier substrate (1) and a laminated dielectric substrate (3) having a plurality of capacitors using internal electrodes (4) are made as independent substrates, and finally both substrates (1) and (3) are integrated. It is characterized by configuring a functional circuit device. Next, each board will be explained in detail. Alumina is generally used as the carrier group. In the present invention, the alumina substrate has a concave structure. This shape can also be considered as a chip carrier formed by laminating three layers.

実施例ではコストの面から一枚のグリーンシートに予じ
め電極パターンを構成した後、絞り加工等によって凹状
に加工し、1500〜1600°Cの温度で焼成するこ
とによって得られる凹状のアルミナ基板を用いる。この
場合、電極としてタングステン、モリブデンが主として
使われるのでポンディングパッドにはメッキによってM
等が設けられる。このようにして作られた凹状キャリヤ
基板(1)のくぼんだ部分(la)には半導体チップマ
ウント用のパッドとポンディングパッドが設けられてい
るので、半導体チップ素子(2)がダイボンディングや
ワイヤボンディング技術によって実装される。その後信
頼性の面から一般的には封止用樹脂(5)を用いて封止
する。これは抵抗を含まないときの回路であるが、次に
抵抗を含む場合について説明する。電極パターン(6)
が構成されたキャリヤ基板(1)の凸部、即ち半導体チ
ップ素子(2)を実装する面とは反対側の面に抵抗素子
を厚膜又は薄膜技術を用いて構成する。抵抗値は設計値
までYAGレーザ、サンドブラスト等によってトリミン
グする。しかる後に前述した方法にて半導体チップ素子
(2)を実装する。
In this example, from the viewpoint of cost, a concave alumina substrate is obtained by forming an electrode pattern on a single green sheet in advance, processing it into a concave shape by drawing, etc., and firing it at a temperature of 1500 to 1600°C. Use. In this case, since tungsten and molybdenum are mainly used as electrodes, the bonding pad is plated with M
etc. will be provided. Pads for semiconductor chip mounting and bonding pads are provided in the recessed portion (la) of the concave carrier substrate (1) thus made, so that the semiconductor chip element (2) can be used for die bonding or wire bonding. Implemented by bonding technology. Thereafter, from the viewpoint of reliability, sealing is generally performed using a sealing resin (5). This is a circuit that does not include a resistor, but next we will explain the case that a resistor is included. Electrode pattern (6)
A resistor element is formed using thick film or thin film technology on the convex portion of the carrier substrate (1) on which the semiconductor chip element (2) is formed, that is, on the surface opposite to the surface on which the semiconductor chip element (2) is mounted. The resistance value is trimmed to the designed value using a YAG laser, sandblasting, etc. Thereafter, the semiconductor chip element (2) is mounted using the method described above.

これらの方法によってIC基板、或いはTC−抵抗基板
が完成する。キャリヤ基板(1)としての機能から後述
する積層型誘電体基板及びプリント基板との接続をとる
必要から、四縁端面に電気的接続のための引出電りが設
けられている。本実施例では端子電極数は各辺に5端子
ずつ合計20端子としているが、これは設計上から任意
に設定することができる。
An IC board or a TC-resistance board is completed by these methods. In order to function as a carrier substrate (1), it is necessary to connect with a laminated dielectric substrate and a printed circuit board, which will be described later, and therefore, lead-out terminals for electrical connection are provided on the four edge surfaces. In this embodiment, the number of terminal electrodes is 20 terminals in total with 5 terminals on each side, but this can be set arbitrarily from the design point of view.

次に積層型誘電体基板(3)について第2図に基づき説
明する。第2図において、(8)は誘電体層、(9)は
引出端子電極を示す。一般に債眉型誘電体基板(3)は
グリーンシート工法、印刷法を用いて作成される。用い
られる材料はBaTiO3系、’l’i03系が高誘電
率特性、温度特性等を考息して使用される。グリーンシ
ート工法、印刷法は誘電体層(8)と内部電極(4)が
交互に積層され、1300〜1400℃で焼成すること
によって作成される。内部電極(4)は複数個のコンデ
ンサを構成する目的でパターン構成グされた版を用いて
、印刷法にて交互に対向(11mが形成される必要があ
る。内部?atm(4)は端子電極(9)と接続されて
いる。本実施例では内蔵されるコンデンサの数は6個で
あり、回路的に使われる帽子は9端子である。他の端子
は実用上問題なければキャリヤ基板(1)との接続強度
の血から有ると有利である。又浮遊容量が問題になると
きは無くする必要力ある。コンデンサの中でバーfバス
コンデンサのように接地端子が内部電極によって共通的
に接続できるものが多い為、一般に端子?ス極数はコン
デンサ数×2倍よりも少なくし得る。これは個別のチッ
プコンデンサを使用するのに比較し、必要端子数が減少
し、接続部の信頼性が増す効果を発揮すると共に複数個
のコンデンサが複合一体化され一ブロック化されるので
管理面でも有利となる。
Next, the laminated dielectric substrate (3) will be explained based on FIG. 2. In FIG. 2, (8) indicates a dielectric layer, and (9) indicates a lead-out terminal electrode. Generally, the bond-shaped dielectric substrate (3) is produced using a green sheet construction method or a printing method. The materials used are BaTiO3-based and 'l'i03-based materials, taking into consideration high dielectric constant characteristics, temperature characteristics, etc. The green sheet construction method and printing method are created by alternately laminating dielectric layers (8) and internal electrodes (4) and firing them at 1300 to 1400°C. The internal electrodes (4) are formed using a patterned plate to form a plurality of capacitors, and the internal electrodes (11m) need to be formed alternately by a printing method. It is connected to the electrode (9). In this example, the number of built-in capacitors is 6, and the cap used in the circuit has 9 terminals. If there is no practical problem, the other terminals are connected to the carrier board ( 1) It is advantageous if there is a strong connection with 1). Also, it is necessary to eliminate it when stray capacitance becomes a problem. Since there are many things that can be connected, the number of terminals and poles can generally be less than twice the number of capacitors.This reduces the number of required terminals and increases the reliability of the connections compared to using individual chip capacitors. In addition to exhibiting the effect of increasing performance, it is also advantageous in terms of management since a plurality of capacitors are integrated into one block.

このように積層型誘電体基板(3)も寸法形状を統一す
ることによって目動化設備の共通化が図れ、大量土庄が
角面となった。以上のようにキャリヤ基板(1)と禎ノ
14型読電体基板(3)とはそれぞれ独立して作成され
、特性チェックされた高密度のリードレスのGj準化モ
ジュールであり、高密度の自動実装が容易である。
In this way, by standardizing the dimensions and shape of the laminated dielectric substrate (3), it was possible to standardize the marking equipment, and the large-scale tonosho became a square surface. As mentioned above, the carrier board (1) and the Tei-no-14 type current reader board (3) are high-density leadless GJ standardization modules that are manufactured independently and whose characteristics have been checked. Easy to automatically implement.

次に第4図に基づきマザーボード(プリント基板)への
実装方法について述べる。第4図において叫は接着剤、
C1υは半田、Q々はマザーボード(プリント基板)を
示す。キャリヤ基板(1)と積層型誘電体基板(3)は
第3図、第2図に示すものと同じであり、パターン構成
されたプリント基板(2)とキャリヤ基板(1)との間
は接着剤OQによって接合され、更にその上において共
ヤリャ基板(1)と使層型誘m体基板(3)との間も接
着剤aOにて接合する。キャリヤ基板(1)がプリント
基板(イ)偶にあるのは、基板強度の点で優れているこ
とと、端子数が半導体チップの方が多いことの理由によ
るものである。このようにして他の実装すべき電子部品
もプリント基板O罎の上に搭載した後、半田浸漬するこ
とによって各基板(1) (3)間の端子電極相互接続
が半田a◇によって実現する。以上はプリント基板@に
順次接合していく方法について説明したが、予じめキャ
リヤ基板(1)と積層型誘電体基板(3)を接着してお
も−でプリント基板(イ)・\一括接合しても良い。各
基(1) (3)は個別に特性チェックされているので
、特性の均一性と歩留まりの優れたものが得られる。又
、以上の説明では二段積みによる複合回路装置につ0て
行なってきたが、この(7+!造から更に段数を増やす
こともできる。基板寸法、端子電極の規格化を行なうこ
とによって高密度イエミ能回路モジュールカぷね単化さ
れる。これは設備の自動化、部品管理といった生産管理
面でも優れた実装方法を実現できるものである。
Next, a mounting method on a motherboard (printed circuit board) will be described based on FIG. In Figure 4, the scream is glue,
C1υ represents solder, and Q represents the motherboard (printed circuit board). The carrier substrate (1) and the laminated dielectric substrate (3) are the same as those shown in Figs. 3 and 2, and there is no adhesive between the patterned printed circuit board (2) and the carrier substrate (1). They are bonded using an adhesive OQ, and furthermore, the common adhesive substrate (1) and the layered dielectric substrate (3) are bonded using an adhesive aO. The reason why the carrier substrate (1) is placed on the printed circuit board (A) is because the substrate is superior in strength and the number of terminals of the semiconductor chip is larger than that of the semiconductor chip. After other electronic components to be mounted are also mounted on the printed circuit board O in this manner, they are dipped in solder to achieve terminal electrode interconnection between the respective boards (1) and (3) using the solder a◇. The above explained the method of sequentially bonding to the printed circuit board @, but in advance, the carrier board (1) and the laminated dielectric board (3) are bonded together, and then the printed circuit board (A) is attached all at once. May be joined. Since the properties of each group (1) and (3) are individually checked, products with uniform properties and excellent yield can be obtained. In addition, although the above explanation has been about a composite circuit device with two stacks, it is possible to further increase the number of stacks from this (7+! structure). By standardizing board dimensions and terminal electrodes, high density Yemi's functional circuit module is integrated into a single unit.This enables an excellent implementation method in terms of production management such as equipment automation and parts management.

発明の効果 以上のように本発明によれば、複合回路装置を高歩留ま
りで容易に作ることができ、それにより安価に提供でき
る。
Effects of the Invention As described above, according to the present invention, a composite circuit device can be easily manufactured with high yield, and can therefore be provided at low cost.

【図面の簡単な説明】[Brief explanation of drawings]

図面は本発明の一実応例を示し、第1図(a)は複合回
路装置の平面図、 0>)は断面図、第2図(a)は積
肩型誘1u体基板の平面図、(b)は断面図、第8図は
キャリヤ基板の断面図、第4図は複合回路装置をマザー
ボードへ実装した状1Hの断面図である。 (1)・キャリヤ基核、(2)−・・半49体チップ素
子、(3)・・積ノl?J型誘屯体基板、(4)・・内
部電極、(5)・・イζM 5(6)・・配線用電極、
(7)・・抵抗体膜、(8)・・・誘電体層、(別 引
出端予電(リラ、oO・・・接着剤、(1υ・・・半田
、(6)・・・マザーボード 代理人  森 本 義 弘 第を図 (トン 第2図 第3図 第4図
The drawings show a practical example of the present invention; FIG. 1(a) is a plan view of a composite circuit device, 0>) is a sectional view, and FIG. 2(a) is a plan view of a stacked dielectric substrate. , (b) is a sectional view, FIG. 8 is a sectional view of the carrier board, and FIG. 4 is a sectional view of the state 1H in which the composite circuit device is mounted on the motherboard. (1)・Carrier base nucleus, (2)−・Half-49 body chip element, (3)・・Product nol? J-type dielectric substrate, (4)...Internal electrode, (5)...IζM 5(6)...Wiring electrode,
(7)...Resistor film, (8)...Dielectric layer, (separately) Output end pre-charge (lire, oO...adhesive, (1υ...solder, (6)...motherboard substitute Figure 2, Figure 3, Figure 4 of Yoshihiro Morimoto

Claims (1)

【特許請求の範囲】 1、 端子電極を有した凹状絶縁基板のくぼみに半導体
チップを実装したキャリヤ基板と、内部電極及び誘電体
層とを交互に積層焼結し複数個のコンデンサ機能を有し
て縁端面に引出端子電極を設けた積層型誘電体基板とを
対向位置させ、半田によって価基板間の任意の端子電極
の電気的接続を施した複合回路装置。 2、 キャリヤ基板と積層型誘電体基板とプリント配線
基板の端子電極を対向配置させ、各基板間を接着剤にて
機械的に固定した後、半田によって相互接続を一括して
行なう複合回路装置の実装方法。
[Scope of Claims] 1. A carrier substrate in which a semiconductor chip is mounted in the recess of a concave insulating substrate having terminal electrodes, internal electrodes and dielectric layers are alternately laminated and sintered to have a plurality of capacitor functions. A composite circuit device in which a laminated dielectric substrate having lead-out terminal electrodes on the edge surface thereof is placed facing each other, and electrical connection of arbitrary terminal electrodes between the substrates is made by soldering. 2. A composite circuit device in which the terminal electrodes of a carrier board, a laminated dielectric board, and a printed wiring board are arranged facing each other, each board is mechanically fixed with adhesive, and then interconnections are made all at once by soldering. How to implement.
JP57206697A 1982-11-24 1982-11-24 Composite circuit device and mounting method thereof Pending JPS5994856A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57206697A JPS5994856A (en) 1982-11-24 1982-11-24 Composite circuit device and mounting method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57206697A JPS5994856A (en) 1982-11-24 1982-11-24 Composite circuit device and mounting method thereof

Publications (1)

Publication Number Publication Date
JPS5994856A true JPS5994856A (en) 1984-05-31

Family

ID=16527612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57206697A Pending JPS5994856A (en) 1982-11-24 1982-11-24 Composite circuit device and mounting method thereof

Country Status (1)

Country Link
JP (1) JPS5994856A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6178574A (en) * 1984-09-27 1986-04-22 Koike Sanso Kogyo Co Ltd Method and device for flux feeding
JPS6291455U (en) * 1985-11-27 1987-06-11
JPS6464240A (en) * 1987-09-03 1989-03-10 Tdk Corp Ic package

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251879A (en) * 1975-10-24 1977-04-26 Hitachi Ltd Semiconductor integrated circuit
JPS56129348A (en) * 1980-03-14 1981-10-09 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251879A (en) * 1975-10-24 1977-04-26 Hitachi Ltd Semiconductor integrated circuit
JPS56129348A (en) * 1980-03-14 1981-10-09 Nec Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6178574A (en) * 1984-09-27 1986-04-22 Koike Sanso Kogyo Co Ltd Method and device for flux feeding
JPS6291455U (en) * 1985-11-27 1987-06-11
JPH0533016Y2 (en) * 1985-11-27 1993-08-23
JPS6464240A (en) * 1987-09-03 1989-03-10 Tdk Corp Ic package

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