JPS5994811A - Plasma cvd processing apparatus - Google Patents

Abstract

PURPOSE:To provide a plasma CVD processing apparatus capable of forming a layer of desired chemical compound on an object having a complicated configuration by a single action, by arranging gas jetting nozzles above and below the object such that the upper and lower nozzles oppose each other. CONSTITUTION:A reactive gas is introduced through a gas introduction pipe 5 and is jetted towards a processing object which is in this case a diaphragm 12, through upper and lower gas jetting nozzles 20a, 20b which are disposed, respectively, above and below the diaphragm 12 with their nozzle ports 7 opposing each other. A plasma is generated in a reaction chamber 11 as an electrode wound round a quartz cylindrical vessel 15 is energized by a high-frequency power source 8. Since the reactive gas in the reaction chamber 11 is induced through a discharge port 4, a sufficiently low pressure is maintained in the reaction chamber 11. Consequently, a gas atmosphere of a predetermined pressure and composition, as well as a predetermined temperature, is maintained within the reaction chamber 11. By the operation of the high-frequency power source 8, plasma is generated in the reaction chamber 11 so that the layers of a desired chemical compounds are formed simultaneously on the upper and lower sides of the diaphragm 12 as the processing object.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in plasma CVD (chemical vapor deposition) processing equipment.

A conventional device of this type is shown in FIG.

In the figure, 1 is a rectangular container made of quartz, 2 is a rectangular sealing ring that seals the upper and lower joints between the container 1 and the side plate 3 to form a reaction chamber 11, and 4 is a sealing ring on one side of the side plate 3. An exhaust port 5 opened at the center is a gas introduction nozzle which penetrates one side of the side plate 3 and whose tip is connected to the gas jet nozzle 6, which is connected to the gas jet nozzle 6 inside the container 1. It is arranged so as to protrude near the center of the. Reference numeral 7 denotes a gas ejection port of the gas ejection nozzle 6; 8 a high-frequency power supply that connects and energizes an electrode 9 fixed to sandwich the container 1 above and below; 10 a lower part of the electrode 9; The diaphragm 12, which is placed in the reaction chamber 11 and near the gas ejection nozzle 6, is maintained at a predetermined temperature by a heater placed close to the vibrating plate 12. 13 and 14 are the diaphragm portion of the diaphragm 12 and ? I'm at the bottle club.

Next, the operation will be explained.

Now, when the high-frequency power source 8 is applied to the electrodes fixed on the top and bottom of the outside of the square quartz container 1, plasma is generated in the reaction chamber 11. At that time, the predetermined reactive gas is introduced into the reaction chamber 11 through the gas injection lower provided in the gas injection nozzle 6 by energizing the gas introduction pipe 5, and furthermore, the reactive gas in the reaction chamber 11 is introduced into the reaction chamber 11 through the exhaust port 4. Since the reaction chamber 11 is evacuated, the inside of the reaction chamber 11 is maintained at a predetermined pressure. On the other hand, the diaphragm 12 is maintained at a predetermined temperature by the heater 10. In this way, the interior of the reaction chamber 11 is maintained at a predetermined gas pressure/mixture ratio and heating temperature, and in this state, plasma is generated by the high frequency power source 8, and a predetermined product is produced on the diaphragm 12, which is the object to be processed. generated on the surface.

Since the conventional plasma CVD processing apparatus is configured as described above, in order to process the diaphragm 12 in which the diaphragm part 13 and the bobbin part 14 are integrally constructed, it is difficult to process the diaphragm part 13 and the bobbin part 14 because the products adhere only to the external surface. The reverse side must be treated again with the front side as the front side, which requires extra time and effort, and this two-processing method has drawbacks such as the possibility of variations in the processing results.

This invention was made in order to eliminate the drawbacks of the conventional ones as described above, and by disposing gas ejection nozzles at the upper and lower parts of the object to be treated, and by making the respective gas ejection ports face each other, The object of the present invention is to provide an apparatus that can generate a predetermined compound on a complex-shaped workpiece in a single process.

An embodiment of the present invention will be described below with reference to FIG.

FIG. 2 shows an embodiment of the present invention, in which the same reference numerals as in FIG. 1 indicate the same or equivalent parts,
I will omit the detailed explanation.

In the figure, reference numeral 15 denotes a cylindrical container made of quartz, which forms the reaction chamber 11 together with a circular sealing ring 16 and a side plate 17. Reference numeral 18 denotes an electrode wrapped around the outer periphery of the cylindrical quartz container 15, which is connected to the high frequency power source 8 and configured to generate plasma in the reaction chamber 11 when the high frequency power source 8 is turned on. ing. A heater 19 is wound around the outer circumference of the cylindrical quartz container 15 and is attached to the electrode 18, and 20a and 20b are branched from the gas introduction nozzle 5, and are arranged vertically facing each other. An upper gas ejection nozzle and a lower gas ejection nozzle, 21 are gas ejection ports provided opposite to each other in the upper and lower gas ejection nozzles 20a and 20b, and 22 is a gas ejection nozzle that connects the diaphragm 12 to both gas ejection nozzles 20a.

This is an angle that supports the support so that it is located in the middle of 20b.

Based on the above configuration, the operation of an embodiment of the present invention will be described.

First, a predetermined reactive gas is energized in the gas introduction pipe 5, passes through the upper and lower gas ejection nozzles 20a and 20b located above and below the diaphragm 12, which is the object to be treated, and is mutually delivered to both gas ejection nozzles 20a and 20b. The gas is ejected from the oppositely provided gas ejection lowers toward the diaphragm 12, and when the high-frequency waves are applied to an electrode wound around the outer circumference of the quartz cylindrical container 15, plasma is generated in the reaction chamber 11. occurs.

At that time, the reactive gas in the reaction chamber 11 is discharged from the exhaust port 4.
Since the reaction chamber 11 is evacuated, the inside of the reaction chamber 11 is maintained at a predetermined pressure. On the other hand, the diaphragm 12 is maintained at a predetermined temperature by a heater 19 wrapped around the cylindrical quartz container 15. In this way, the inside of the reaction chamber 11 is maintained at a predetermined gas pressure, mixing ratio, and heating temperature, and plasma is generated by turning on the high-frequency power source 8, and a predetermined product is simultaneously applied to both the front and back surfaces of the diaphragm 120, which is the object to be processed. generated.

As described above, according to the present invention, by arranging the gas ejection nozzles facing each other at the upper and lower parts of the workpiece and configuring the respective gas ejection ports to face each other, it is possible to solve the problem of complex shapes of the workpiece. Predetermined compounds are simultaneously produced on both the front and back surfaces of the wafer, which not only doubles the processing capacity but also reduces costs and significantly improves processing accuracy and reliability.

[Brief explanation of the drawing]

FIG. 1 is an overall side sectional view showing a conventional plasma CVD apparatus, and FIG. 2 is a view corresponding to FIG. 1 showing an embodiment of the present invention. 1.15...Container, 4...Exhaust port, 5...Gas introduction pipe, 6, 20a, 20b-Gas ejection nozzle, 7゜21...Gas ejection port, 8...High frequency Power supply, 9, 18... Electrode, 10.19... Heater, 11... Reaction chamber, 12... Vibration plate, 13... Diaphragm part, 14... Bobbin part, 22... ··angle.

Claims (1)

[Claims] (1) A container made of quartz, a gas jetting nozzle having a gas jetting port installed near the object to be treated in the center of the container and guided by a gas introduction pipe, and attached to the outside of the container. Plasma CVD consisting of electrodes and heaters
A plasma CVD processing apparatus, characterized in that the gas ejection nozzles are arranged opposite to each other on the soil part and the lower part of the object to be treated, and the respective gas ejection ports are made to face each other.