JPS5994402A - Method of producing voltage nonlinear resistor - Google Patents

Method of producing voltage nonlinear resistor

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Publication number
JPS5994402A
JPS5994402A JP57204083A JP20408382A JPS5994402A JP S5994402 A JPS5994402 A JP S5994402A JP 57204083 A JP57204083 A JP 57204083A JP 20408382 A JP20408382 A JP 20408382A JP S5994402 A JPS5994402 A JP S5994402A
Authority
JP
Japan
Prior art keywords
oxide
voltage
zinc oxide
nonlinear resistor
varistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57204083A
Other languages
Japanese (ja)
Other versions
JPH0320884B2 (en
Inventor
高見 昭宏
義和 小林
小西 茂生
松岡 道雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57204083A priority Critical patent/JPS5994402A/en
Publication of JPS5994402A publication Critical patent/JPS5994402A/en
Publication of JPH0320884B2 publication Critical patent/JPH0320884B2/ja
Granted legal-status Critical Current

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  • Thermistors And Varistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は酸化亜鉛バリスタ組成物にガラスフリットを添
加して高温で焼成した焼結体の両面に電極をつけてなる
電圧非直線抵抗器の製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is a method for manufacturing a voltage nonlinear resistor, which comprises adding electrodes to both sides of a sintered body made by adding glass frit to a zinc oxide varistor composition and firing it at a high temperature. It is related to.

従来例の構成とその問題点 従来、電圧非直線抵抗器としては炭化珪素を主体とし、
これを磁器質結合剤で固めた、いわゆるSiCバリスタ
が広く用いられてきたが、最近酸化亜鉛を主成分とし、
131203.CO2O3等の金属酸化物を添加して混
合、成形、焼成した焼結体を用いた、いわゆる酸化亜鉛
バリスタが生産され、実用に供されている。
Conventional configuration and its problems Traditionally, voltage nonlinear resistors were mainly made of silicon carbide.
So-called SiC varistors, which are hardened with a porcelain binder, have been widely used, but recently SiC varistors have been made with zinc oxide as the main component.
131203. A so-called zinc oxide varistor, which uses a sintered body to which a metal oxide such as CO2O3 is mixed, molded, and fired, has been produced and put into practical use.

この種の電圧非直線抵抗器(以降バリスタと呼ぶ)の電
圧−電流特性は一般に次式によって表わされる。
The voltage-current characteristics of this type of voltage nonlinear resistor (hereinafter referred to as a varistor) are generally expressed by the following equation.

I=(V/(J” ただし、Iは電流、■は電圧、C2αは定数である。そ
して、バリスタの特性はCとαの2つの定数で表わすこ
とができる。Cは電流1アンペア時における電圧で、一
般に固定抵抗器の抵抗値に相当し、またバリスタとして
は電圧非直線指数αができるだけ大きい方が望ましい。
I=(V/(J") where I is current, ■ is voltage, and C2α is a constant.The characteristics of a varistor can be expressed by two constants, C and α.C is the value when the current is 1 ampere. It is a voltage, which generally corresponds to the resistance value of a fixed resistor, and it is desirable for a varistor to have a voltage nonlinearity index α as large as possible.

本発明者らはCの代りに電流10μ八、 100pA、
1 mA、−。
The present inventors replaced C with a current of 10 μ8, 100 pA,
1 mA, -.

100Aの時の電圧■104A、 1004A I v
1mAI■ ・・・、vl。。Aを使用している。
Voltage at 100A■104A, 1004A I v
1mAI■ ..., vl. . I am using A.

酸化亜酸バリスタのαは40〜100と極めて大きく、
電圧安定化、サージ電圧抑制の効果が著しく、電子機器
の保護に広く使われている。最近では酸化亜鉛バリスタ
を避雷器等の高圧、高エネルギー分野にも使っていこう
とする動きが活発になっている。
The α of the oxide varistor is extremely large, ranging from 40 to 100.
It has remarkable effects on voltage stabilization and surge voltage suppression, and is widely used to protect electronic equipment. Recently, there has been an active movement to use zinc oxide varistors in high voltage, high energy fields such as lightning arresters.

しかしながら、避雷器等に使われる酸化亜鉛バリスタは
高電圧が常時印加され、雷サージ等の高エネルギーを吸
収しなければならないため、酸化亜鉛バリスタ素子の形
状が大きくなる。電子機器の保護のために用いられる酸
化亜鉛バリスタ素子の形状が通常直径3胴〜14mm、
厚み0.5〜2Mであるのに対し、避雷器等に用いられ
る酸化亜鉛バリスタ素子の形状は直径30 mm−80
朋、厚み30wa〜50Mである。
However, the zinc oxide varistor used in lightning arresters and the like is constantly applied with high voltage and must absorb high energy such as lightning surges, so the shape of the zinc oxide varistor element becomes large. The shape of zinc oxide varistor elements used to protect electronic equipment is usually 3 mm to 14 mm in diameter.
While the thickness is 0.5 to 2M, the shape of the zinc oxide varistor element used in lightning arresters etc. is 30mm-80mm in diameter.
Me, the thickness is 30wa to 50M.

このように避雷器等に使われる酸化亜鉛バリスタには形
状が太きいために、通常の小形素子の製造法では要求性
能を満足させることはできない0要求性能の中でも特に
課電寿命特性と放電耐量特性が重要である。従来の小形
の酸化亜鉛バリスタ素子の課電寿命特性の改善策として
、(1)焼結体にガラスを塗布した後、600℃〜85
0℃で熱処理してガラス拡散させる。(2)無水ホウd
(’B203)。
In this way, zinc oxide varistors used in lightning arresters etc. have a large shape, so the required performance cannot be met using normal manufacturing methods for small devices.Among the required performances, especially the charged life characteristics and discharge withstand characteristics. is important. As a measure to improve the energized life characteristics of conventional small zinc oxide varistor elements, (1) After applying glass to the sintered body,
The glass is diffused by heat treatment at 0°C. (2) Anhydrous d
('B203).

酸化バリウム(BaO)等のガラス質添加物を添加し、
焼成する。(3〕ホウケイ酸ビスマス系ガラスまたはホ
ウケイ酸鉛系ガラスを添加し、焼成する。
Adding glassy additives such as barium oxide (BaO),
Fire. (3) Bismuth borosilicate glass or lead borosilicate glass is added and fired.

(4)酸化ビスマス、無水ホウ酸、酸化−コバルト、酸
化銀からなるガラスを添加し、焼成する等の方法が採ら
れている。しかし、上記の方法を大形素子に適用した場
合、(1)の方法では素子が大きいため、ガラスが素子
内部にまで拡散しきらず、安定した性能が得られない。
(4) A method has been adopted in which a glass made of bismuth oxide, boric anhydride, cobalt oxide, or silver oxide is added and fired. However, when the above method is applied to a large element, the glass is not completely diffused into the element due to method (1) because the element is large, and stable performance cannot be obtained.

(2)の方法は原料混合物のスラリーのゲル化が起るの
でその対策として仮焼工程が心安になり、しかも成形性
が悪く、素子内部にクラックが発生する。
In the method (2), since gelation of the slurry of the raw material mixture occurs, a calcination step is necessary as a countermeasure against this, and the moldability is poor and cracks occur inside the element.

さらに、放電耐量が悪くなる。(3)の方法は製造工程
上の問題はないが、課電寿命が少し悪く、放電耐量も悪
くなる。(4)の方法も製造工程上の問題はないが、課
電寿命が十分でなく、放電耐量も弱い等の問題点があっ
た。
Furthermore, the discharge withstand capacity deteriorates. Method (3) does not have any problems in the manufacturing process, but the energizing life is a little short and the discharge withstand capacity is also low. Method (4) also has no problems in the manufacturing process, but it has problems such as an insufficient charging life and a weak discharge capacity.

発明の目的 本発明は上記欠点に鑑み、大形の酸化亜鉛バリスタ素子
でも課電寿命特性と放電耐量に優れている電圧非直線抵
抗器の製造方法を提供しようとするものである。
OBJECTS OF THE INVENTION In view of the above-mentioned drawbacks, the present invention seeks to provide a method for manufacturing a voltage non-linear resistor that has excellent charge life characteristics and discharge withstand capacity even when using a large zinc oxide varistor element.

発明の構成 この目的を達成するために本発明の電圧非直線抵抗器の
製造方法として、酸化亜鉛バリスタ組成物に添加するガ
ラスフリットの構成材料と添加量を検討し、特に高圧、
高エネルギー分野の酸化亜鉛バリスタ素子の課電寿命特
性、放電耐量を向上させたものである。具体的には、酸
化ビスマス(Bi203)40〜90Wtチ、シソ力(
Sio2)5〜25wt%、無水ホウ酸(B2O2)1
0〜S。
Structure of the Invention In order to achieve this object, as a method for manufacturing the voltage nonlinear resistor of the present invention, the constituent materials and amount of glass frit to be added to the zinc oxide varistor composition were studied, and especially high voltage,
This is a zinc oxide varistor element used in the high energy field with improved charging life characteristics and discharge withstand capacity. Specifically, bismuth oxide (Bi203) 40 to 90 Wt, perilla strength (
Sio2) 5-25wt%, boric anhydride (B2O2)1
0~S.

wt係、酸化銀(Ag2O)5〜30 w t%からな
るガラス組成物を1000 ℃〜1250℃で融解後冷
却し微粉砕したガラスフリ、/)を、酸化亜鉛バリスタ
組成物100重量部に対して0.01〜6重量部添加し
て混合、成形し、10001:〜1400℃で焼成して
得られる焼結体に電極を設けることを特徴とする電圧非
直線抵抗器の製造方法を提供するものである。
A glass composition consisting of 5 to 30 wt% of silver oxide (Ag2O) was melted at 1000 °C to 1250 °C, cooled, and finely pulverized. Provided is a method for manufacturing a voltage nonlinear resistor, characterized in that an electrode is provided on a sintered body obtained by adding 0.01 to 6 parts by weight, mixing, molding, and firing at 10,001 to 1,400°C. It is.

実施例の説明 以下、実施例に従って本発明を説明する。Description of examples Hereinafter, the present invention will be explained according to Examples.

まず、酸化ビスマス(Bi2O2)40〜eoWt係、
シリカ(St O2) 5〜25wt%、無水ホウ酸(
B2O2)10〜3owt%、酸化銀(八q20)5〜
30wt %を配合、混合し、混合物を白金ルツボに入
れ、1000℃〜1250℃で融解後、水中へ投入し、
急冷し、それをポットミルで微粉砕してガラスフリット
を作る。
First, bismuth oxide (Bi2O2) 40~eoWt,
Silica (StO2) 5-25wt%, boric anhydride (
B2O2) 10~3wt%, silver oxide (8q20) 5~
Blend and mix 30 wt %, put the mixture in a platinum crucible, melt at 1000 ° C to 1250 ° C, and then pour it into water,
It is rapidly cooled and pulverized in a pot mill to make glass frit.

一方、酸化亜鉛(ZnO) 85〜98.5mo1% 
On the other hand, zinc oxide (ZnO) 85-98.5 mo1%
.

酸化ビスマス(B1203)0.01〜5 mot% 
、酸化コバルト(CO203)α01〜5 mo1%、
酸化マンガン(MnO2)o、Q1〜5m0L%、酸化
アンチモン(Sb203)0.02〜10 mo1%、
酸化クロム(Cr 203) 0.01〜5 znoZ
%、シリカ(5102)0.02〜10mot%、酸化
−”)ケル(Nip) 0.02〜10mot%、酸化
アルミニウム(A t 203)0.001〜o、os
moz% を配合したもの(以下バリスタ組成物と呼ぶ
)を作り、このバリスタ組成物100重量部に対して、
前記ガラスフリットを0.01〜5重量部添加し、混合
2成形し、その成形体を850℃〜950℃で仮焼し、
その仮焼体の側面に酸化ビスマス(B12O3)、シリ
カ(5102)r酸化アンチモン(Sb203)からな
る側面高抵抗剤を塗布し、1000℃〜140Q℃で焼
成して得られる円柱形焼結体の両面に金属溶射によって
電極をつける。
Bismuth oxide (B1203) 0.01-5 mot%
, cobalt oxide (CO203) α01-5 mo1%,
Manganese oxide (MnO2) o, Q1-5m0L%, antimony oxide (Sb203) 0.02-10 mo1%,
Chromium oxide (Cr 203) 0.01~5 znoZ
%, silica (5102) 0.02-10 mot%, oxidation-'') Kel (Nip) 0.02-10 mot%, aluminum oxide (A t 203) 0.001-o, os
moz% (hereinafter referred to as a varistor composition), and based on 100 parts by weight of this varistor composition,
Adding 0.01 to 5 parts by weight of the glass frit, mixing and molding, and calcining the molded product at 850°C to 950°C,
A cylindrical sintered body is obtained by coating the sides of the calcined body with a side high resistance agent consisting of bismuth oxide (B12O3), silica (5102) r antimony oxide (Sb203), and firing at 1000°C to 140Q°C. Electrodes are attached to both sides by metal spraying.

このようにして作られた本発明例と従来例の特性比較を
直径33酎、厚み30ff+++1の焼結体を用いて第
1図、第2図に示す。第1図は課電寿命特性を、第2図
は放電耐量特性を示す。課電寿命試験は130℃の恒温
槽の中に試料を置き、試料の電極間に試料の■1rnA
の95%の電圧に相当するピーク電圧を有するAC電圧
を印加し、その漏れ電流の増加状態を調べた。一方、放
電耐量試験は電流波形4×10μsのパルス電流を2回
印加した時の試料の■1mAの変化率を調べた。図でイ
は本発明品の特性、口は従来品の特性である。
A comparison of the characteristics of the inventive example and the conventional example made in this manner is shown in FIGS. 1 and 2 using a sintered body having a diameter of 33 mm and a thickness of 30 ff++1. FIG. 1 shows the charging life characteristics, and FIG. 2 shows the discharge endurance characteristics. In the energized life test, the sample is placed in a constant temperature bath at 130℃, and the sample's ■1rnA is
An AC voltage having a peak voltage corresponding to 95% of the voltage was applied, and the increase in leakage current was investigated. On the other hand, in the discharge withstand test, the rate of change of 1 mA of the sample was examined when a pulse current with a current waveform of 4 x 10 μs was applied twice. In the figure, A indicates the characteristics of the product of the present invention, and A indicates the characteristics of the conventional product.

以上の結果は本発明品が酸化ビスマス(B1203)5
0wt% 、 シ+) 力(Sin2)10wt% 、
無水ホウe(B203)20wt%p 酸化銀(Ag2
O) 20wt %を1000℃で融解した後急冷し、
微粉砕したガラスフリットをバリスタ組成wJ(Zn0
95.496mot%、 Bi  O005m0L%、
CO2O33 0、5mo t%、MnO20,6rnot%、5b2
031.。
The above results show that the product of the present invention has bismuth oxide (B1203) 5
0wt%, Si+) Force (Sin2) 10wt%,
Anhydrous porcelain (B203) 20wt%p Silver oxide (Ag2
O) 20wt% was melted at 1000°C and then rapidly cooled,
The finely ground glass frit was made into a varistor composition wJ (Zn0
95.496mot%, Bi O005m0L%,
CO2O33 0.5mot%, MnO20.6rnot%, 5b2
031. .

mo7%、Cr2O30,5mO4%、5in20.5
mot%。
mo7%, Cr2O30,5mO4%, 5in20.5
mot%.

1寸101.0mot%、At2030.○05mo、
/=%)10゜重量部に対して0.1重量部を加えて混
合、成形し、そのtR形体を900℃で仮焼し、その仮
焼体の側面に酸化ビスマス、シリカ、酸化アンチモンか
らなる1μm1面高抵抗剤を塗布し、1200℃で焼成
したものである。捷だ、従来品はB 120368.4
 wt%、SiO1’2.5wt%、B20312.5
 vv t%。
1 inch 101.0 mot%, At2030. ○05mo,
/=%) 0.1 part by weight is added to 10° parts by weight, mixed and molded, the tR shape is calcined at 900°C, and the side surface of the calcined body is coated with bismuth oxide, silica, and antimony oxide. A high resistance agent of 1 μm per surface was coated on each surface and fired at 1200°C. The conventional product is B 120368.4
wt%, SiO1'2.5wt%, B20312.5
vvt%.

Coo 8.3wt%、Ag2O8,3wt%のガラス
組成物であり、その池の条件は本発明品と同じである。
It is a glass composition containing 8.3 wt% of Coo and 3 wt% of Ag2O8, and the pond conditions are the same as those of the product of the present invention.

ガラスフリットの添゛加量が0.01重量部未満になる
と課電寿命特性の改善効果がなくなり、一方5重量部を
超えると放電耐量が悪くなる。また、ガラスフリット中
のB12O3が4 Q w t %未満ではガラス化が
困難になり、90wt %を超えた時は素子の電圧非直
線指数aが悪くなる。次に、S z 02が5wt %
未満では素子の課電寿命が悪くなり、25wt %を超
えた時には放電耐量が悪くなる。さらに、B2O3は1
0wt %未満では電圧非直線指数αが悪くな9.3o
wt %を超えた時には放電耐量が悪くなる。そして、
Ag2Oが5wt%未満では課電寿命特性が悪くなシ、
30wt係を超えた時には放電耐量が悪くなる。
If the amount of glass frit added is less than 0.01 parts by weight, the effect of improving the electrification life characteristics is lost, while if it exceeds 5 parts by weight, the discharge withstand capacity deteriorates. Further, if B12O3 in the glass frit is less than 4 Q wt %, vitrification becomes difficult, and if it exceeds 90 wt %, the voltage nonlinearity index a of the device deteriorates. Next, S z 02 is 5wt%
If it is less than 25 wt %, the life of the device will be shortened, and if it exceeds 25 wt %, the discharge capacity will be deteriorated. Furthermore, B2O3 is 1
Below 0wt%, the voltage non-linearity index α becomes worse at 9.3o.
When it exceeds wt %, the discharge withstand capacity deteriorates. and,
If Ag2O is less than 5wt%, the charging life characteristics will be poor.
When the weight exceeds 30 wt, the discharge withstand capacity deteriorates.

発明の効果 以上のように本発明は大形の酸化亜鉛バリスタ素子の課
電寿命の特性、放電耐量を大巾に改善でき、その実用的
効果は犬なるものがある。
Effects of the Invention As described above, the present invention can greatly improve the charging life characteristics and discharge withstand capacity of large zinc oxide varistor elements, and its practical effects are outstanding.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は課電寿命特性の本発明品と従来品との比較を示
す図、第2図は放電耐量特性の本発明品と従来品との比
較を示す図である。
FIG. 1 is a diagram showing a comparison between a product of the present invention and a conventional product in charge life characteristics, and FIG. 2 is a diagram showing a comparison between a product of the present invention and a conventional product in terms of discharge withstand characteristics.

Claims (2)

【特許請求の範囲】[Claims] (1)酸化ビスマス(B12O3)40〜90wt%。 シリカ(S IO2) 5〜25wt%、無水ホウ酸(
B2O2)10〜30wt%、酸化銀(Aq2o)5〜
30wt%5xらなるガラス組成物を1000℃〜12
50℃で融解後冷却し微粉砕したガラスフリットを、酸
化亜鉛バリスタ組成物100重量部に対して0.01〜
5M量部添加して混合、成形し、1000℃〜1400
℃で焼成して得られる焼結体に電極を設けることを特徴
とする電圧非直線抵抗器の製造方法。
(1) Bismuth oxide (B12O3) 40 to 90 wt%. Silica (S IO2) 5-25 wt%, boric anhydride (
B2O2) 10~30wt%, silver oxide (Aq2o) 5~
A glass composition consisting of 30 wt% 5x was heated at 1000°C to 12
The glass frit, which is melted at 50°C, cooled and finely ground, is added in an amount of 0.01 to 100 parts by weight of the zinc oxide varistor composition.
Add 5M parts, mix and mold, and heat to 1000℃~1400℃
A method for manufacturing a voltage nonlinear resistor, which comprises providing an electrode on a sintered body obtained by firing at °C.
(2)酸化亜鉛バリスタ組成物の配合組成を酸化亜鉛(
Z:nO) 85〜9 B、6rnot%、酸化ビスマ
ス(Bi203)0.01〜5rQot%、酸化コバル
ト(C02o3)0.01〜5m0t%、1−化77ガ
ン(MnO2) o、 o1〜s rnot%、酸化7
7f%7(Sb203)O102〜10m0L%、酸化
クロム(Cr203)0.01〜5mO2%、クリ力(
S 102 )0.02〜10 mo、l−%、酸化ニ
アケル(NiO) 0.02〜10mot%、酸化アル
ミニウム(At2o3)0.001〜0.06 mo 
t%とじた特許請求の範囲第1項記載の電圧非直線抵抗
器の製造方法。
(2) Change the blending composition of the zinc oxide varistor composition to zinc oxide (
Z: nO) 85-9 B, 6rnot%, bismuth oxide (Bi203) 0.01-5rQot%, cobalt oxide (C02o3) 0.01-5m0t%, 1-77gan (MnO2) o, o1-s rnot %, oxidation 7
7f%7(Sb203)O102~10m0L%, chromium oxide (Cr203)0.01~5mO2%, chestnut power (
S102) 0.02-10 mo, l-%, Nichel oxide (NiO) 0.02-10 mot%, aluminum oxide (At2o3) 0.001-0.06 mo
A method for manufacturing a voltage nonlinear resistor according to claim 1, in which the voltage is reduced by t%.
JP57204083A 1982-11-19 1982-11-19 Method of producing voltage nonlinear resistor Granted JPS5994402A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57204083A JPS5994402A (en) 1982-11-19 1982-11-19 Method of producing voltage nonlinear resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57204083A JPS5994402A (en) 1982-11-19 1982-11-19 Method of producing voltage nonlinear resistor

Publications (2)

Publication Number Publication Date
JPS5994402A true JPS5994402A (en) 1984-05-31
JPH0320884B2 JPH0320884B2 (en) 1991-03-20

Family

ID=16484496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57204083A Granted JPS5994402A (en) 1982-11-19 1982-11-19 Method of producing voltage nonlinear resistor

Country Status (1)

Country Link
JP (1) JPS5994402A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6182401A (en) * 1984-09-29 1986-04-26 株式会社東芝 Voltage non-linearity resistor and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6182401A (en) * 1984-09-29 1986-04-26 株式会社東芝 Voltage non-linearity resistor and manufacture thereof
JPH0584041B2 (en) * 1984-09-29 1993-11-30 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPH0320884B2 (en) 1991-03-20

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