JPS5990955A - Manufacture of photosensor array - Google Patents
Manufacture of photosensor arrayInfo
- Publication number
- JPS5990955A JPS5990955A JP57201553A JP20155382A JPS5990955A JP S5990955 A JPS5990955 A JP S5990955A JP 57201553 A JP57201553 A JP 57201553A JP 20155382 A JP20155382 A JP 20155382A JP S5990955 A JPS5990955 A JP S5990955A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metallic layer
- metal layer
- metal
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000002184 metal Substances 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 9
- 230000005611 electricity Effects 0.000 claims abstract description 7
- 230000003287 optical effect Effects 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 239000002689 soil Substances 0.000 claims description 2
- 230000007261 regionalization Effects 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 abstract description 11
- 239000000956 alloy Substances 0.000 abstract description 11
- 229910018487 Ni—Cr Inorganic materials 0.000 abstract description 8
- 238000001259 photo etching Methods 0.000 abstract description 7
- 238000005476 soldering Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910018106 Ni—C Inorganic materials 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 241000951471 Citrus junos Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発＃Ｊは例えばファクシミリの小型化、経済化を目的
とし、送信原稿と寸法的に１：１に対応させて複数個の
光センサーを配列し、送信原稿上の画像を読取るための
光センツーアレーの製造方法に関する。。Detailed Description of the Invention The #J of the present invention aims to make facsimile machines smaller and more economical, for example, by arranging a plurality of optical sensors in 1:1 correspondence with the transmitted original, The present invention relates to a method of manufacturing an optical sensor array for reading images. .
従来この柚の用途にはＭＯＳフォトタイオードアレー、
ＣＯＤあるいはＢＢＤ等がある。これらの光センサーは
ＩＣ技術により作られるため、センザー素子自体の大き
さが小さいため原稿等を読取色場合、レンズ等を用いて
像を縮小する必要が生じる。その結果、センサーアレー
と光学系の位置合せに高精度が要求される上に装置の小
型化も困難である。Conventionally, this yuzu is used for MOS photodiode array,
There are COD and BBD. Since these optical sensors are manufactured using IC technology, the size of the sensor element itself is small, so when reading a document or the like in color, it is necessary to reduce the image using a lens or the like. As a result, high precision is required for alignment between the sensor array and the optical system, and it is also difficult to miniaturize the device.
一方、これに対して光学系としてオプチカルファイバー
アレー又はレンズアレーを用いて一送信原稿と寸法的に
１：１に対応させてｖｔ取る方式が現在、一般的に使用
されている。On the other hand, currently, a method is generally used in which an optical fiber array or a lens array is used as an optical system to obtain a VT in a 1:1 dimensional correspondence with one transmitted document.
これに使用する光センザーアレーは絶縁基板上にＣｄＳ
やＣｄＳｅからなる光センサー素子を横一列に多数並べ
、それに電気供給用の導電配線が形成された構造になっ
ている。The optical sensor array used for this is made of CdS on an insulating substrate.
It has a structure in which a large number of optical sensor elements made of CdSe or CdSe are arranged horizontally in a row, and conductive wiring for supplying electricity is formed thereon.
従来方法の一般的な製造工程の一例はまずセラミックス
或いはガラス板等の絶縁基板上にカドミニー−ムのアル
カリ性水溶液からＣｄ８被膜を形成し、その上にＣｄＳ
ｅをスパッター或いは蒸着法で被着し、それを活性化エ
ツチング等を行なって所望の形状の光センザーアレーと
する。An example of a typical manufacturing process in the conventional method is to first form a Cd8 film from an alkaline aqueous solution of cadmium on an insulating substrate such as a ceramic or glass plate, and then coat CdS on it.
E is deposited by sputtering or vapor deposition, and then subjected to activation etching and the like to form an optical sensor array in a desired shape.
次にこの光センサ−アレーに電気を供給する為の導電配
線群を形成する。Next, a group of conductive wires for supplying electricity to this optical sensor array is formed.
導電配線群の形成方法はまず絶縁基板と密着力が強いＡ
１或いはＮｉ−Ｃｒ合金層を蒸着し、更にその上に導電
性が良く外部配線と半田付等で接続しやｆ イＡ ｕ
、 Ａ ｇ 、 Ｃｕ層を蒸着し、フメトエッテン等で
導電配線群（以下配線群という）を形成する。The method for forming the conductive wiring group is first A, which has strong adhesion to the insulating substrate.
1 or a Ni-Cr alloy layer is deposited on top of the Ni-Cr alloy layer, which has good conductivity and can be connected to external wiring by soldering, etc.
, A g , a Cu layer is deposited, and a conductive wiring group (hereinafter referred to as a wiring group) is formed using fumetethene or the like.
配線群の配線数が少ない時は個々の配線端子から直接外
部配線に半田付勢の方法で接続できるが１、ｍｍの間に
１０本前後の数を有し全長ｌ Ｑ Ｃｍ以上の光センザ
ーアレーの端子数では余りにも多すぎる為配線群の上に
絶縁被膜を介して上層配線を形成し端子数を１１５０〜
１／１００にまとめる方法が一般的である。When the number of wires in a wiring group is small, it is possible to connect the individual wiring terminals directly to external wires by soldering. Since the number of terminals was too large, upper layer wiring was formed on top of the wiring group through an insulating film to increase the number of terminals to 1150~
A common method is to reduce the number to 1/100.
配線群の上に上層配線を形成する方法は配線群の上に絶
縁層を印刷熔の方法で形成し、上層配線と接続する配線
群の一部表面を洗浄し金属面を出し、その上にＮｉ−Ｃ
ｒ合金やＡ、ｕを蒸着等で被着し、フォトエツチング等
で上層配線を形成する。The method of forming the upper layer wiring on the wiring group is to form an insulating layer on the wiring group using a printing and melting method, wash the surface of a part of the wiring group that connects to the upper layer wiring to expose the metal surface, and then Ni-C
An r alloy, A, or u is deposited by vapor deposition or the like, and an upper layer wiring is formed by photoetching or the like.
岡、上層配線１本は各配線群の１本と接続されている。One upper layer wiring is connected to one wiring of each wiring group.
光センサ−アレーと配線群等を形成］また絶縁基板へ外
部から電気を供給する為には基板の上層配線の端子と外
部の導線と半田刊等の方法で接続される。[Formation of optical sensor array, wiring group, etc.] In order to supply electricity to the insulating substrate from the outside, terminals of the upper layer wiring of the substrate are connected to external conductive wires by a method such as soldering.
しかしながらこのような光センサ−アレーの製造方法に
も次のような大きな欠点を有している。However, this method of manufacturing an optical sensor array also has the following major drawbacks.
基板上に形成された配線群と上層配線との接続方法とし
て既に形成されている金属蒸着膜からなる配線群の厚み
は数千にしかないため上層配線との接続部の清浄処理が
特に困難である。As a method for connecting wiring groups formed on a substrate to upper layer wirings, the thickness of wiring groups made of metal vapor deposited films that have already been formed is only a few thousand, so cleaning the connection part with upper layer wirings is particularly difficult. .
金属の清浄処理とし１表面を少しエツチングすれば表面
の汚れが完全に除去されたことを確認できるが配線群を
形成する′＃着腹の厚みが余シにも小さすぎる為エツチ
ングすると簡単に除去されてしまう。As a metal cleaning treatment, you can confirm that the dirt on the surface has been completely removed by etching the surface a little, but since the thickness of the deposit that forms the wiring group is too small, it can be easily removed by etching. It will be done.
従って、配線１１＝表面の汚れを完全に除去しないで上
層配線を形成するととが多く、後工程又は製品となって
使用中に汚染物質の影智を受り接触不良となってしまう
ことがしばしば祈、生じている。Therefore, it is often the case that upper layer wiring is formed without completely removing dirt from the surface of wiring 11, which often results in poor contact due to the influence of contaminants during post-processing or product use. Pray, it's happening.
本発ψｊの目的は上記の欠点を除き製造工程の歩留シを
上は製品になってからの信頼性も大ｒｊｊに向上さぜる
製造方法を提供することである。The purpose of the present invention ψj is to provide a manufacturing method that eliminates the above-mentioned drawbacks, increases the yield of the manufacturing process, and greatly improves the reliability of the product.
本発明は絶縁基板上に光センν゛−を形成した後それに
電気を供給゛する配線群の形成方法として、第一の金属
１＠を被着し、その上に第一金属層と化学的性質が異な
る第二の金属層を被着し更に第三層の金属層として第一
層の金属と同−金属或いは第二の金属層と化学的性質の
異なる金属を被着し三層構造とし、続いてフォトエツチ
ング等で配線群を形成する。続いて形成された配線群の
上に絶縁層を形成し上層配線と接続する配線群表面の第
三層被着膜をエツチング等により除去し、表面の汚れも
同時に除去し清浄な第二層の表面上に土層配線を形成す
る金属層を蒸着等によシ被着し、フォトエツチング等で
上層配線を形成し、配線群と上層配線を強周に接続する
。The present invention is a method for forming a wiring group for supplying electricity to an optical sensor ν- after forming it on an insulating substrate, in which a first metal 1@ is deposited, and a first metal layer and a chemical layer are formed on the first metal 1@. A second metal layer with different properties is deposited, and a third metal layer is deposited with the same metal as the first layer or a metal with different chemical properties from the second metal layer, resulting in a three-layer structure. Then, a wiring group is formed by photoetching or the like. Next, an insulating layer is formed on the formed wiring group, and the third layer coating film on the surface of the wiring group that connects to the upper layer wiring is removed by etching etc., and the dirt on the surface is also removed at the same time to form a clean second layer. A metal layer for forming soil layer wiring is deposited on the surface by vapor deposition or the like, upper layer wiring is formed by photoetching or the like, and the wiring group and the upper layer wiring are connected in a strong circumferential manner.
以下図面を参照して本発明の実施例につき詳細に説明す
る。第１図は本発明の製造工程図でちる。Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a manufacturing process diagram of the present invention.
第１図Ａ、Ｂｔ−参照すると絶縁基板」二に形成された
光センザー素子１！ｌｊ ２に電気を供給する配線群を
形成するために絶縁基板１によく密矯しかつ、光センサ
ーとオーミックコンタクトができる金属、例えばＮ ｉ
−Ｃｒ合金を５００〜１０００λ蒸九第−金属層３と
すＺ）。卯、１図Ｃを鉾照すると第一金属層上３に電気
室導度が良く第一金属層と化学的性質が大きく異なる金
属、例えばＡｕを蒸着１−第二層り層４を形成する。第
１ＪＤを参照すると第二金属層４上に第一金属層３と同
じ金属でを）るＮｉ−Ｃｒ合金或いは第一金属層４と化
学的性質が異なる金属、例えばＡＩを蒸着し、第三金属
層５を形成し、フォトエッチ等の方法で配線群９とする
。続いて上層配線を形成するため第１図Ｅを参照すると
配線群９上に絶縁層６をスクリーン印刷等で形成する、
絶縁層としてはポリイミドやアルキッド樹脂が一般的で
形成後２００℃以上で焼成される。更に第１図、ＦＧを
参照すると、絶縁層６及び配線群（９）上に上層配線を
形成する前に配線群（９）に付着している汚れ等を完全
に除去するため配線群金属層３、４．５の第三金属層５
をエツチングによシ除去する。エツチング液はＮｉ−Ｃ
ｒ合金、Ａ１両方とも塩酸系で十分である。第三金属層
５が除去された第二金属層４は汚染物質が完全除去され
清浄な表面が得られる。Referring to FIGS. 1A and 1B, an optical sensor element 1 formed on an insulating substrate 2! In order to form a wiring group for supplying electricity to the insulating substrate 1, a metal, such as Ni
- 500 to 1000 λ of Cr alloy is vaporized as the ninth metal layer 3 (Z). 1. Looking at Figure 1 C, a metal with good electric chamber conductivity and chemical properties significantly different from those of the first metal layer, such as Au, is deposited on the first metal layer 3 to form a second layer 4. . Referring to the first JD, a Ni-Cr alloy containing the same metal as the first metal layer 3 or a metal having different chemical properties from the first metal layer 4, such as AI, is deposited on the second metal layer 4, and a third metal layer 4 is deposited on the second metal layer 4. A metal layer 5 is formed, and a wiring group 9 is formed using a method such as photo-etching. Next, in order to form upper layer wiring, referring to FIG. 1E, an insulating layer 6 is formed on the wiring group 9 by screen printing or the like.
The insulating layer is generally made of polyimide or alkyd resin, and is fired at 200° C. or higher after being formed. Furthermore, referring to FIG. 1 and FG, before forming upper layer wiring on the insulating layer 6 and the wiring group (9), a wiring group metal layer is applied to completely remove dirt etc. adhering to the wiring group (9). 3, 4.5 third metal layer 5
Remove by etching. Etching liquid is Ni-C
A hydrochloric acid system is sufficient for both the r alloy and A1. Contaminants are completely removed from the second metal layer 4 from which the third metal layer 5 has been removed, resulting in a clean surface.
第三金属層５が除去された第二金属層４上及び絶縁層６
上に例えば絶縁層及び第二金属層４とよく密着するＮｉ
−Ｃｒ合合金−て基板外部と半田付等で接続するため半
田付性が良いＡｕ等がＮｔ−ｃｒｒ金上に蒸着し第１図
Ｈのようにフォトエツチング等で上層配線８を形成する
。On the second metal layer 4 from which the third metal layer 5 has been removed and the insulating layer 6
For example, Ni which is in close contact with the insulating layer and the second metal layer 4 is formed on the top.
In order to connect the -Cr alloy to the outside of the substrate by soldering or the like, Au or the like having good solderability is deposited on the Nt-CrR gold, and as shown in FIG. 1H, an upper layer wiring 8 is formed by photo-etching or the like.
こうして得られた光センサ−アレイ基板の上層配線８の
一部及び配＋ｖｉ１群（９）の一部が半田付等で基板外
部と電気的に接続される。。A portion of the upper layer wiring 8 of the optical sensor array substrate thus obtained and a portion of the wiring +vi1 group (9) are electrically connected to the outside of the substrate by soldering or the like. .
本発明の製造方法は例えば配線群（９）の第三金属層５
に第一金属層と同−金属で形成すれば従来とを１とんど
工数が変らず上層配線金Ｍ＃７を蒸着する前処理が完全
にできたことを目で確認できる利点もあシ、本発明で製
造した光センサーアレー〇配線部の導通不良は従来２０
〜３０チ発生していたものが１％以下にな多使用中の信
頼性も一段と良くなった。The manufacturing method of the present invention includes, for example, the third metal layer 5 of the wiring group (9).
If the first metal layer is formed of the same metal as the first metal layer, there is no change in the number of man-hours compared to the conventional method, and there is also the advantage that it can be visually confirmed that the pretreatment for depositing the upper layer wiring gold M#7 has been completed. , the conductivity failure of the optical sensor array manufactured by the present invention in the wiring part was 20% compared to conventional
The occurrence of ~30 chips has decreased to less than 1%, and reliability during heavy use has also improved.
以上、一実施例について述べたが被着する金属の種類は
ＡＩ、Ｎｉ−Ｃｒ合金、Ａｕに限定する必要はない、又
は、被着方法についても蒸着に限定しない、。Although one embodiment has been described above, the type of metal to be deposited is not limited to AI, Ni-Cr alloy, or Au, nor is the deposition method limited to vapor deposition.
第１図Ａ〜Ｈは本発明の製造工程を示す模倣的断面図で
ある。
１・・・・・・基板、２・・・・・・センサー素子、３
・・曲第−金属層、４・・・・・・第二金属層、５・・
曲第三金属層、６・・・・・・絶縁層、７・・・・・・
上層金属蒸着層、８・・面上Ｊ藝配線、９・・・・・・
第−金棺層３、第二金属層４及び第三像ｆ）ｉＭ５をフ
ォトエツチング等で加工した配線１１１゜1A-1H are mimetic cross-sectional views illustrating the manufacturing process of the present invention. 1...Substrate, 2...Sensor element, 3
...Track No. - Metal layer, 4...Second metal layer, 5...
Curved third metal layer, 6... Insulating layer, 7...
Upper metal vapor deposition layer, 8...J art wiring on the surface, 9...
Wiring 111° obtained by processing the first gold coffin layer 3, second metal layer 4, and third image f) iM5 by photoetching, etc.
Claims (1)
に電気を供給する導電配線として第一の金属層を被着す
る工程と、その上に第一の金り層と化学的性質が異なる
第二の金属層を被着する工程と、更にその上に第一の金
属層と同−金属或いは第二の金属層と化学的性質が異な
る第三の金統層を被着する工程と、その土にパターン形
成用のレジスト被膜を形成する工程と、エツチングに、
ｔυ導電配線群を形成する工程と、不要になったレジス
ト被膜を除去する工程と、導電配線群の一部に絶縁層を
被着形成する工程と、導電配線群の第三金跣層の一部を
エツチングによシ除去する工程と、絶縁層上及び導電配
線群の第三金属層を除去した部分上に上層配線を形成す
ることを具備したことを特徴とする光センサーアレーの
製造方法、。forming an optical sensor element on an "insulating substrate", depositing a first metal layer as a conductive wiring for supplying electricity thereon, and depositing a second metal layer having different chemical properties from the first metal layer thereon; a step of depositing a second metal layer, and a step of depositing thereon a third metal layer having the same metal as the first metal layer or a chemical property different from the second metal layer; The process of forming a resist film for pattern formation on soil and etching,
A step of forming a tυ conductive wiring group, a step of removing an unnecessary resist film, a step of depositing and forming an insulating layer on a part of the conductive wiring group, and a step of forming a third metal layer of the conductive wiring group. A method for manufacturing a photosensor array, comprising the steps of: removing the third metal layer by etching; and forming an upper layer wiring on the insulating layer and on the portion of the conductive wiring group from which the third metal layer has been removed. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57201553A JPS5990955A (en) | 1982-11-17 | 1982-11-17 | Manufacture of photosensor array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57201553A JPS5990955A (en) | 1982-11-17 | 1982-11-17 | Manufacture of photosensor array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5990955A true JPS5990955A (en) | 1984-05-25 |
Family
ID=16442949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57201553A Pending JPS5990955A (en) | 1982-11-17 | 1982-11-17 | Manufacture of photosensor array |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5990955A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5737891A (en) * | 1980-08-19 | 1982-03-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
| JPH06112517A (en) * | 1992-09-29 | 1994-04-22 | Fujitsu Ltd | Crystal growing method |
| JP2011100770A (en) * | 2009-11-04 | 2011-05-19 | Sumitomo Electric Ind Ltd | Method for manufacturing light receiving element array and light receiving element array, and method for manufacturing epitaxial wafer and epitaxial wafer |
-
1982
- 1982-11-17 JP JP57201553A patent/JPS5990955A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5737891A (en) * | 1980-08-19 | 1982-03-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
| JPH06112517A (en) * | 1992-09-29 | 1994-04-22 | Fujitsu Ltd | Crystal growing method |
| JP2011100770A (en) * | 2009-11-04 | 2011-05-19 | Sumitomo Electric Ind Ltd | Method for manufacturing light receiving element array and light receiving element array, and method for manufacturing epitaxial wafer and epitaxial wafer |
Non-Patent Citations (1)
| Title |
|---|
| JPN6017009470; Ａ． ＳＴＥＩＮ ｅｔ ａｌ．: 'ＩｎＡｓ（Ｐ，Ｓｂ）／ＩｎＡｓＳｂ ＬＥＤｓ ｅｍｉｔｔｉｎｇ ｉｎ ｔｈｅ ３-４muｍ ｒａｎｇｅ ａｔ ｒｏｏｍ ｔｅｍｐｅｒａｔｕｒｅ' １１ＴＨ ＩＮＴＥＲＮＡＴＩＯＮＡＬ ＣＯＮＦＥＲＥＮＣＥ ＯＮ ＩＮＤＩＵＭ ＰＨＯＳＰＨＩＤＥ ＡＮＤ ＲＥＬＡＴＥＤ ＭＡＴＥＲＩＡＬＳ , 199905, ｐｐ．９５-９８ * |
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