JPS5990937A - Torch for semiconductor wire bonding - Google Patents
Torch for semiconductor wire bondingInfo
- Publication number
- JPS5990937A JPS5990937A JP57199810A JP19981082A JPS5990937A JP S5990937 A JPS5990937 A JP S5990937A JP 57199810 A JP57199810 A JP 57199810A JP 19981082 A JP19981082 A JP 19981082A JP S5990937 A JPS5990937 A JP S5990937A
- Authority
- JP
- Japan
- Prior art keywords
- torch
- tube
- bonding
- double
- cylindrical part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78267—Flame torch, e.g. hydrogen torch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85043—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a flame torch, e.g. hydrogen torch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は半導体ワイヤボンディング用トーチの改良に
かかり、特にポールボンディング組立の高速稼動に対し
、トーチ炎の消炎と不安定を対策したトーチの改良に関
する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to an improvement of a torch for semiconductor wire bonding, and particularly relates to an improvement of a torch that takes measures to extinguish the torch flame and prevent instability for high-speed operation of pole bonding assembly. .
半導体装置の組立において、半導体チップの電極をボン
ディングワイヤでリードに市、気的に接続し9出する工
程がある。この工程で重積からり−ドヘボンデイングワ
イヤを接続したのち、ボンディングワイヤを溶断してそ
の始端にボールを形成し次のボンディング番こ移る。上
記ボンディングワイヤに溶断を施すために第1図および
第2図に示されるようなトーチけ)が用いられる。この
トーチは、主筒部(1a)が垂直にボンディングマシン
(図示省略)に取着部(lb)で取着され、上端には可
撓管接続部(IC)が設けられ、下部は主筒部の軸線1
品・から外れて曲がりノズル部(1d)に形成されてい
る。In assembling a semiconductor device, there is a step in which electrodes of a semiconductor chip are electrically connected to leads using bonding wires. In this process, after the stacked bonding wires are connected, the bonding wires are fused and a ball is formed at the starting end of the bonding wires, and the next bonding step is carried out. A torch as shown in FIGS. 1 and 2 is used to melt and cut the bonding wire. In this torch, the main cylinder part (1a) is vertically attached to a bonding machine (not shown) at the attachment part (lb), the upper end is provided with a flexible tube connection part (IC), and the lower part is the main cylinder part (1a). axis 1
The nozzle part (1d) is bent away from the product.
したがって軸線A−Aを中心に主筒部を回転させればノ
ズル部は前記回転に追随して首振りし、溶断ポジション
にてボンディングのタイミングにマツチさせて酸水素ガ
スによるトーチを施すものである。Therefore, when the main cylinder part is rotated around the axis A-A, the nozzle part oscillates following the rotation, and a torch with oxyhydrogen gas is applied at the fusing position in time with the timing of bonding. .
上記従来の技術には次にあける欠点がある。 The above conventional technology has the following drawbacks.
(1) ボンディングの雰囲気を非酸化性にするため
に流される雰囲気ガスの流れ(第2図(2))に影響さ
れトーチ炎が消えたり、不安定になる。(1) The torch flame may disappear or become unstable due to the influence of the flow of atmospheric gas (see Figure 2 (2)) to make the bonding atmosphere non-oxidizing.
(2)トーチのノズル部が高速で移動する稼動のためト
ーチ炎が消えたり、不安定になる。(2) Because the torch nozzle moves at high speed, the torch flame may disappear or become unstable.
上記により
(a)トーチ炎消えにより工程の流れが著るしく阻害さ
れ、品質不良や歩留り低下を来たす。As a result of the above, (a) the torch flame goes out, which significantly impedes the flow of the process, resulting in poor quality and decreased yield.
(b)トーチ炎が不安定で形成されるボールが大きいと
ボンディングショート(隣接部との接触による)を、ま
た、小さいとチップクラックを生じたり、キャピラリ詰
まりを生じたりなどする。さらに、ボンディング強度の
ばらつきの原因となる。(b) If the torch flame is unstable and the ball formed is large, it will cause a bonding short (due to contact with an adjacent part), and if it is small, it will cause chip cracks or capillary clogging. Furthermore, it causes variations in bonding strength.
叙上によりボンディング不良の誘因となり、歩留低下を
来たす。This causes bonding defects and reduces yield.
などの問題点がある。There are problems such as:
この発明は上記従来の問題点を改良した半導体ワイヤボ
ンディング用トーチの梠造を提供する。The present invention provides a structure for a torch for semiconductor wire bonding which improves the above-mentioned conventional problems.
この発明は半導体チップにワイヤボンディングを施すト
ーチの先端部を2重管構造とし、その内管から可撚ガス
、外管から空気を夫々噴出させる如くなり、トーチ炎を
その外周に噴出させた空気層で保獲して雰囲気の影費や
トーチの高速稼動による消炎、不安定化を改良するもの
である。In this invention, the tip of a torch used for wire bonding to semiconductor chips has a double-tube structure, and the inner tube blows out twisting gas, and the outer tube blows out air. This layer is used to improve the effects of the atmosphere and the extinguishing and destabilization caused by high-speed operation of the torch.
以下にこの発明を1実施例につき図面を参照して詳細に
説明する。Hereinafter, one embodiment of the present invention will be explained in detail with reference to the drawings.
第3図に示されるトーチ0は主筒部(121が垂直にボ
ンディングマシン(図示省略)に取着される2重管構造
になっており、その内管(12a)は上端が可撓管接続
部(12b)に形成され、ことに酸水素ガス源(図示省
略)から導かれた一例のゴム管を接続し、内管内にトー
チ用可燃ガスを圧入する。また、主筒部(I4の下部は
主筒部の軸線BBから外れて曲がり、内管(12a)の
先端はノズル部(12c)に形成されている。次に主筒
部における前記内管(12a)と2重管構造をなす外管
(12d)は主筒部の比較的上部で可撓管接続部(12
e)に接続し、かつ、その下幅はノズル部(12c)よ
りも若干突出させた方が有効である。すなわち、内管の
外径がIII+1のとき肉厚が1關の外管の内径をl、
8酎としここに望気を流量0.05〜317ml1lで
噴流させる場合、前記突出長を0,5酎にして最適であ
った。なお、この突出長は使用状態や雰囲気(カス流)
等によって好適の幅は0〜1 amの範囲にある。この
範[/11は小さいと効果が乏しく、太きいと先端が焼
けて変形しあるいは脆くなることからきまる値である。The torch 0 shown in Fig. 3 has a double-tube structure in which the main cylinder part (121) is vertically attached to a bonding machine (not shown), and the upper end of the inner tube (12a) is connected to a flexible tube. Part (12b) is connected to an example of a rubber tube led from an oxyhydrogen gas source (not shown), and combustible gas for the torch is pressurized into the inner tube. is bent away from the axis BB of the main cylinder part, and the tip of the inner pipe (12a) is formed into a nozzle part (12c).Next, it forms a double pipe structure with the inner pipe (12a) in the main cylinder part. The outer tube (12d) is connected to the flexible tube connection section (12d) at a relatively upper part of the main cylinder section.
e), and its lower width is more effective if it is slightly protruded from the nozzle part (12c). That is, when the outer diameter of the inner tube is III+1, the inner diameter of the outer tube with a wall thickness of 1 inch is l,
In the case where 8 liters of sake were used and the desired air was jetted therein at a flow rate of 0.05 to 317 ml, it was optimal to set the protrusion length to 0.5 liters. Note that this protrusion length may vary depending on usage conditions and atmosphere (waste flow).
etc., the preferred width is in the range of 0 to 1 am. This range [/11] is a value determined because if it is too small, the effect will be poor, and if it is too thick, the tip will be burnt, deformed, or become brittle.
なお、第4図において、(2)は雰囲気ガスの流れ、(
3)はボンディングワイヤ、(3a)はトーチにより形
成されたボール部である。In addition, in Fig. 4, (2) represents the flow of atmospheric gas, (
3) is a bonding wire, and (3a) is a ball portion formed by a torch.
次に、この発明は内管と外管との相対位置を必ずしも同
軸にしなくてよい。すなわち、第5図に示すように内管
(22a)と外管(22d)とが互いに周面の一部で接
触するように構成しそも、さらには同軸との中間の位置
でもよい。Next, in the present invention, the relative positions of the inner tube and the outer tube do not necessarily have to be coaxial. That is, as shown in FIG. 5, the inner tube (22a) and the outer tube (22d) may be configured so as to be in contact with each other at part of their circumferential surfaces, or even at an intermediate position between the coaxial lines.
この発明によると、トーチ炎が形成される雰囲気が外筒
から噴出される空気流によってトーチ炎が被覆されるの
で、雰囲気の変化、非酸化性ガスの雰囲気中でも消炎し
、あるいは不安定になることがない。また、トーチ炎が
形づくられる内管の先端部がトーチの高速移動に対して
冷却されトーチ炎が変化するのを防止でき消炎、不安定
化が対策された。叙上によりボンディングワイヤに形成
されるボールの大きさが一定化でき、ボール大によるボ
ンディングショート、ボール小によるチップクラップや
ボンディングキャピラリのつまりなど、また、ボンディ
ング強度のl゛I:らっき等によるボンディング不良、
歩留の低下等が対策できる顧著な効果がある。According to this invention, since the atmosphere in which the torch flame is formed is covered by the air flow jetted from the outer cylinder, the torch flame does not extinguish or become unstable even when the atmosphere changes or in an atmosphere of non-oxidizing gas. There is no. In addition, the tip of the inner tube where the torch flame is formed is cooled as the torch moves at high speed, preventing the torch flame from changing, extinguishing the flame, and preventing it from becoming unstable. By this method, the size of the ball formed on the bonding wire can be made constant, and problems such as bonding short due to large ball, chip clap and clogging of bonding capillary due to small ball, etc., and bonding strength due to l゛I: Lucky etc. Bad bonding,
This has a significant effect in countermeasures such as reduction in yield.
第1図および第2図は従来のトーチに関し、第1図は断
面図、第2図はトーチを説明するための断面図、第3図
以降はこの発明の1実施例のトーチに関し、第3図はト
ーチの断面図、第4図はトーチを説明するための断面1
g(、第5図はトーチのノズル部を示す断面図である。
!、11 )−チ
3 ボンディングワイヤ
33 ボール
12 )−チの主筒部
12a、22a 内管
12b 、 12e 可捺¥!? 拶i;71
:部12C内管光”Ifijのノズル部
t2d、22d 外管
第1図
第2図
第 3 図1 and 2 relate to a conventional torch, FIG. 1 is a sectional view, FIG. 2 is a sectional view for explaining the torch, and FIG. 3 and subsequent figures relate to a torch of an embodiment of the present invention. The figure is a cross-sectional view of the torch, and Figure 4 is cross-section 1 for explaining the torch.
g (, Fig. 5 is a sectional view showing the nozzle part of the torch. !, 11) - Chi 3 Bonding wire 33 Ball 12 ) - Chi's main cylinder portion 12a, 22a Inner tube 12b, 12e Flexible! ? Greetings i;71
: Part 12C Inner tube light "Ifij nozzle part t2d, 22d Outer tube Fig. 1 Fig. 2 Fig. 3
Claims (1)
気を噴出させる半導体ワイヤボンディング用トーチ。A torch for semiconductor wire bonding that has a single double tube and blows out torch gas from the inner tube and air from the outer tube.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57199810A JPS5990937A (en) | 1982-11-16 | 1982-11-16 | Torch for semiconductor wire bonding |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57199810A JPS5990937A (en) | 1982-11-16 | 1982-11-16 | Torch for semiconductor wire bonding |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5990937A true JPS5990937A (en) | 1984-05-25 |
Family
ID=16414008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57199810A Pending JPS5990937A (en) | 1982-11-16 | 1982-11-16 | Torch for semiconductor wire bonding |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5990937A (en) |
-
1982
- 1982-11-16 JP JP57199810A patent/JPS5990937A/en active Pending
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