JPS5990629A - Plasma chemical vapor deposition device - Google Patents
Plasma chemical vapor deposition deviceInfo
- Publication number
- JPS5990629A JPS5990629A JP20076782A JP20076782A JPS5990629A JP S5990629 A JPS5990629 A JP S5990629A JP 20076782 A JP20076782 A JP 20076782A JP 20076782 A JP20076782 A JP 20076782A JP S5990629 A JPS5990629 A JP S5990629A
- Authority
- JP
- Japan
- Prior art keywords
- evacuation
- gas
- discharge electrode
- photosensitive drum
- divided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は真空排気系内に放電電極、ガス導入系、排気口
、ならびに薄膜を形成する為の基材を有するプヲズヤC
VD装置において、排気口を複数個に分割し、分割した
排気口にそれぞれ、排気量調整パルプを備えることによ
り膜厚分布の均一性を改良したブヲズマCVD装置に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a vacuum evacuation system that includes a discharge electrode, a gas introduction system, an exhaust port, and a base material for forming a thin film.
The present invention relates to a BWOZMA CVD apparatus in which the uniformity of film thickness distribution is improved by dividing an exhaust port into a plurality of parts and equipping each of the divided exhaust ports with an exhaust volume adjusting pulp.
近年アモルファスシリコン(以]では、、−8jと書く
)を中心とし、プヲズマCvD法による薄膜デバイスの
研究が盛んである。その中で、とくに複写機用感光体は
注目されているデバイスの一つである。In recent years, there has been active research into thin film devices based on amorphous silicon (hereinafter written as -8j) using the PZM CVD method. Among these, photoreceptors for copying machines are one of the devices that is attracting particular attention.
br 1図は従来のα−8i感光体製造装置の1例で、
放電電極、感光ドラム基材、排気口との関係を示した図
であシ、感光ドラムの中心軸と垂直に交わる面で切断し
た場合の断面をも示している。br Figure 1 shows an example of a conventional α-8i photoconductor manufacturing equipment.
This diagram shows the relationship among the discharge electrode, the photosensitive drum base material, and the exhaust port, and also shows a cross section taken along a plane perpendicular to the central axis of the photosensitive drum.
同図において、101は感光ドラム暴利、102は放電
電極、103は放電電極の中空部分、104はガスの放
出口、105はガス導入管、106は排気口、107i
l−1:排気用のノ(イブである。In the figure, 101 is a photosensitive drum, 102 is a discharge electrode, 103 is a hollow part of the discharge electrode, 104 is a gas discharge port, 105 is a gas introduction pipe, 106 is an exhaust port, and 107i
l-1: Exhaust nob.
真空チャンバ内に配置されたこのような系で、ガス導入
管105からα−s i、作製に必要なガス、すなわち
水素、アルゴン、モノシラン、メタン、そしてジボラン
等の混合ガスを放電電極の空間部分103へと導入する
。このガスは多数の放出口104から感光ドラム基材へ
と放出される。このとき、放電電極102と感光ドラム
基材101と(7)1143で高周波放電をおこすと、
モノシラノ、メタン、ジボランガスが分解され、水素、
炭素、硼素を含む、z−s7膜がドラム基材101の表
面上に堆積する。In such a system arranged in a vacuum chamber, α-s i is supplied from the gas inlet pipe 105 to the space of the discharge electrode, and the gas necessary for the production, that is, a mixed gas of hydrogen, argon, monosilane, methane, diborane, etc. 103. This gas is discharged from a number of discharge ports 104 to the photosensitive drum base material. At this time, when high frequency discharge is caused between the discharge electrode 102, the photosensitive drum base material 101, and (7) 1143,
Monosilano, methane, and diborane gas are decomposed to produce hydrogen,
A z-s7 film containing carbon and boron is deposited on the surface of the drum substrate 101.
ドラム基材は膜厚の均一性をはかる為、デポジションの
間回転される。残シのガスはセ16気口1゜6、および
排気用パイプ107全通してポンプで排気される。The drum substrate is rotated during deposition to ensure film thickness uniformity. The remaining gas is exhausted by a pump through the air outlet 1.6 and the exhaust pipe 107.
このような装置で多数の感光ドラムを作製する場合、個
々のドラム同志の膜厚分布、ならびに一つのドラム内で
の膜厚分布の均一性が十分に得られないという欠点を有
している。When a large number of photosensitive drums are manufactured using such an apparatus, there is a drawback that sufficient uniformity in film thickness distribution between individual drums and within one drum cannot be obtained.
その原因として、それぞれのドラム基材から排気用パイ
プ107までの距離、ならびにガス導入管105までの
距離が異なるため、ドラム層相近傍を流れるガス流量に
差が生じ、それが膜厚の差となって表われる。The reason for this is that the distance from each drum base material to the exhaust pipe 107 and the distance to the gas introduction pipe 105 are different, which causes a difference in the gas flow rate near the drum layer phase, which is caused by a difference in film thickness. It appears.
またドラム暴利の中心軸方向にみたガスの分布も必ずし
も均一ではなく、これも一つの感光ドラム内でのBの厚
の不均一性となって表われる。Further, the distribution of gas in the direction of the center axis of the drum is not necessarily uniform, and this also appears as non-uniformity in the thickness of B within one photosensitive drum.
第1図に示すような5木取シの装置の場合、通常の作製
条件で感光ドラムを作製すると、中心に置かれた感光ド
ラムに対し、両端にIガがれた感光ドラムの膜厚け15
%程度薄くなる。In the case of a device with 5 wood slots as shown in Fig. 1, if the photosensitive drum is manufactured under normal manufacturing conditions, the film thickness of the photosensitive drum with I grooves on both ends will be larger than that of the photosensitive drum placed in the center. 15
% thinner.
また一つの感光ドラム内の膜厚分布を円筒の中心軸方向
にみると、そのばらつきは±5%くらいである。Furthermore, when looking at the film thickness distribution within one photosensitive drum in the direction of the central axis of the cylinder, the variation is about ±5%.
このように膜厚分布のばらつきが大きいことは帯電電位
がばらつくことになシ量産土大きな問題である。Such a large variation in film thickness distribution is a major problem in mass production, as it causes variation in charging potential.
本発明はかかる欠点を除去したものであって、その目的
とするところは膜厚の均一性を改善することにある。The present invention eliminates these drawbacks, and its purpose is to improve the uniformity of film thickness.
第2図は本発明の感光体製造装置に卦ける放電電極、感
光ドラム基材および排気[コの関係を示した図である。FIG. 2 is a diagram showing the relationship among the discharge electrode, the photosensitive drum base material, and the exhaust gas in the photosensitive member manufacturing apparatus of the present invention.
また第3図は、第2図の排気口の部分をとシ出して詳細
に示しである。Further, FIG. 3 shows the exhaust port portion of FIG. 2 in detail.
第2図および第3図において、2o1は感光ドラム基材
、202は放電電極、203は真空チャンバ、204は
ガス放出口、2o5はガス導入管206は排気口、2o
7は排気用のパイプ、208は放電電極の間隙である。In FIGS. 2 and 3, 2o1 is a photosensitive drum base material, 202 is a discharge electrode, 203 is a vacuum chamber, 204 is a gas discharge port, 2o5 is a gas introduction pipe 206 is an exhaust port, and 2o
7 is an exhaust pipe, and 208 is a gap between discharge electrodes.
また第3図は本発明のJIF気口の1例で3個に分割し
た場合を示してbる。Further, FIG. 3 shows an example of the JIF vent of the present invention, which is divided into three parts.
第3図において、排気パイプは仕切り板301at3o
xbによって、三つの空間、3o2a。In FIG. 3, the exhaust pipe is connected to the partition plate 301at3o.
By xb, three spaces, 3o2a.
302b 、302cに分割されている。三つに分割さ
れた、それぞ)]、のパイプは4;L気口303を多数
有シテイル。バイア’304a、304b、304Cは
、それぞれ空間302a、302b 、および302c
に排気口を通して導入されたガスを排気するためのパイ
プである。It is divided into 302b and 302c. The pipe is divided into three parts, each having a large number of L air ports 303. Vias '304a, 304b, 304C connect spaces 302a, 302b, and 302c, respectively.
This is a pipe for exhausting gas introduced through the exhaust port.
こり、らのパイプとポンプとの間はそれぞれコンダクタ
ンスバルブをつけ、独立に排気量を制御できるようにし
である。A conductance valve is installed between each pipe and the pump so that the displacement can be controlled independently.
この装置において、モノシラン、ジボラン、メタン、水
素、そしてアルゴンの混合ガスがガス導入v205を通
って放電電極202に導入される。In this device, a mixed gas of monosilane, diborane, methane, hydrogen, and argon is introduced into the discharge electrode 202 through the gas introduction v205.
放電電極202は2枚の金属板によって中空部分が作ら
れている。この中空部分に導入された混合ガスは電極の
内側面に設けられたガス放出口204からドラム基材2
01に向って放出される。The discharge electrode 202 has a hollow portion made of two metal plates. The mixed gas introduced into this hollow portion is released from the drum base material 2 through a gas discharge port 204 provided on the inner surface of the electrode.
It is released towards 01.
さらにこのガスは放電電極の間隙208と排気口206
を通って排気される。Furthermore, this gas flows between the discharge electrode gap 208 and the exhaust port 206.
is exhausted through the
このとき、排気口206は第3図に示すように複数個の
ブロックに分割され、各ブロックはそれぞれ独立に排気
量を制御して因る。すなわち感光ドラム暴利201の円
筒軸方向に対してガス流量の分布を制御できる。At this time, the exhaust port 206 is divided into a plurality of blocks as shown in FIG. 3, and the exhaust amount of each block is controlled independently. That is, the distribution of the gas flow rate can be controlled in the cylindrical axial direction of the photosensitive drum 201.
この状態で感光ドラム基材201と放電電極202との
間で高周波放電を起こすど、モノシランガス、ジボラン
ガス、そしてメタンガスが分解され感光ドラム暴利20
1の表面上に炭素、水素、そして硼素を含んだα−si
膜が形成される。In this state, high-frequency discharge occurs between the photosensitive drum base material 201 and the discharge electrode 202, and monosilane gas, diborane gas, and methane gas are decomposed and the photosensitive drum profiteer 20
α-si containing carbon, hydrogen, and boron on the surface of 1
A film is formed.
感光ドラム内の円周方向の膜厚の均一化をはかるため感
光ドラム基材は円筒の軸を中心に回転させる。In order to make the film thickness uniform in the circumferential direction within the photosensitive drum, the photosensitive drum base material is rotated around the cylindrical axis.
第2図かられかるように、ガス放出D 204から刊気
ロ206寸での相対位fil関係はどの放電電極にお−
ても同じである。したがって、それぞれの放電電極から
放出されるガス流に対するインピーダンスはいずれも等
しく、ガスの流れ方も等しい。As can be seen from Fig. 2, the relative position fil relationship from the gas discharge D 204 to the 206 dimension is to which discharge electrode.
The same is true. Therefore, the impedance to the gas flow discharged from each discharge electrode is the same, and the way the gas flows is also the same.
また、刊気口も複数個に分割され、それぞれ排気量を調
節して、感光ドラム暴利の円筒軸方向に膜ff ヲコン
トロールできる。Further, the air opening is also divided into a plurality of parts, and by adjusting the displacement amount of each part, the film ff can be controlled in the direction of the cylindrical axis of the photosensitive drum.
この装置において、混合ガスの流量を各電極毎に200
C07m、inとし、各電極において、500Wのパ
ワーで約4時間高周波放電させた。得ら′hた感光ドラ
ムのα−si層は約20μmであυ、感光ドラム内のば
らつきは中心軸方向で約±3優におさオフ、従来の±5
%よυ相当改善された。また、ロット内の感光ドラム間
のばらつきは±8%以内であυ、これも従来の±15俤
にくらべれば約半分になっていた。In this device, the flow rate of the mixed gas was set at 200°C for each electrode.
C07m, in, and each electrode was subjected to high-frequency discharge at a power of 500 W for about 4 hours. The α-Si layer of the photosensitive drum obtained was approximately 20 μm, and the variation within the photosensitive drum was approximately ±3 well off in the central axis direction, compared to the conventional ±5
It has improved considerably by %. Further, the variation between photosensitive drums within a lot was within ±8%, which was also about half of the conventional range of ±15.
このように、本発明はプラズマCVD装置において、(
7,VD膜の膜厚を従来の約半分にするものであって、
量産装置として非常に有効なものである。In this way, the present invention provides a plasma CVD apparatus (
7. The thickness of the VD film is reduced to about half of the conventional one,
This is a very effective device for mass production.
また、上述の説明ではa−8i感光体について説明して
きたが、本発明の価値は必ずしもα−8i感光体に限る
ものではなく、例えば、SiO2や5j3N4等の絶縁
膜の製造にも利用できるものであp1本発明の応用範囲
は十分広い。Furthermore, although the above description has been made regarding the a-8i photoconductor, the value of the present invention is not necessarily limited to the α-8i photoconductor, but can also be used for the production of insulating films such as SiO2 and 5J3N4. The scope of application of the present invention is sufficiently wide.
第1図は従来のα−S<感光体製造装置、第2図は本発
明の感光体製造装置における放電電極、感光ドラム基材
および排気口の関係を示した図である。
また第3図は第2図の排気口の部分をとシ出して詳細に
示した図である。
201・・・感光ドラム層相
202・・・放電電極
203・@−真空チャンバ
204・・魯ガス放出口
205・・・ガス導入管
206・拳・排気口
207・・・排気用パイプ
208・・・放電電極の間隙
301a〜b・・仕切シ板
302a〜C・・空間
303−・・排気口
304α〜C・・バイブ
以 上
出願人 株式会社識肋精工舎
=15:
第3図
−154−FIG. 1 is a diagram showing the relationship among a discharge electrode, a photosensitive drum base material, and an exhaust port in a conventional α-S<photoreceptor manufacturing apparatus, and FIG. 2 is a diagram showing the relationship among a discharge electrode, a photosensitive drum base material, and an exhaust port in the photoreceptor manufacturing apparatus of the present invention. Moreover, FIG. 3 is a diagram showing the exhaust port portion of FIG. 2 in detail. 201...Photosensitive drum layer phase 202...Discharge electrode 203.@-vacuum chamber 204..Gas discharge port 205...Gas introduction pipe 206.Fist.Exhaust port 207...Exhaust pipe 208...・Gap between discharge electrodes 301a~b・・Partition plate 302a~C・・Space 303−・・Exhaust port 304α~C・・Vibrator or above Applicant Shikiri Seikosha Co., Ltd. = 15: Figure 3-154-
Claims (1)
ならびに薄膜を形成する為の基材を有するプヲズマGV
D装置において、排気口が複数個に分割され、分割され
た排気口はそれぞれ、排気量調整バルブを備えたことを
特徴とするプヲズ7 CV D装置。 121 前記排気口を真空室内の中央に配置し、その
周囲に放電電極、ガス導入系および暴利を配置したこと
を特徴とする特許請求の範囲第1項記載のプラズマCV
D装置。[Claims] [1] A discharge electrode, a gas introduction system, an exhaust port in the vacuum exhaust system,
and PWOZMA GV, which has a base material for forming thin films.
The Pwozu 7 CV D device is characterized in that the exhaust port is divided into a plurality of parts, and each of the divided exhaust ports is provided with a displacement adjustment valve. 121. The plasma CV according to claim 1, characterized in that the exhaust port is arranged at the center of the vacuum chamber, and a discharge electrode, a gas introduction system, and a profiteer are arranged around it.
D device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20076782A JPS5990629A (en) | 1982-11-16 | 1982-11-16 | Plasma chemical vapor deposition device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20076782A JPS5990629A (en) | 1982-11-16 | 1982-11-16 | Plasma chemical vapor deposition device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5990629A true JPS5990629A (en) | 1984-05-25 |
Family
ID=16429828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20076782A Pending JPS5990629A (en) | 1982-11-16 | 1982-11-16 | Plasma chemical vapor deposition device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5990629A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100920324B1 (en) | 2007-08-24 | 2009-10-07 | 주식회사 케이씨텍 | Injection Unit of Atomic Layer Deposition Device |
US10363290B2 (en) | 2014-10-17 | 2019-07-30 | Kodiak Sciences Inc. | Butyrylcholinesterase zwitterionic polymer conjugates |
-
1982
- 1982-11-16 JP JP20076782A patent/JPS5990629A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100920324B1 (en) | 2007-08-24 | 2009-10-07 | 주식회사 케이씨텍 | Injection Unit of Atomic Layer Deposition Device |
US10363290B2 (en) | 2014-10-17 | 2019-07-30 | Kodiak Sciences Inc. | Butyrylcholinesterase zwitterionic polymer conjugates |
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