JPS5989462A - サイリスタ - Google Patents

サイリスタ

Info

Publication number
JPS5989462A
JPS5989462A JP57199962A JP19996282A JPS5989462A JP S5989462 A JPS5989462 A JP S5989462A JP 57199962 A JP57199962 A JP 57199962A JP 19996282 A JP19996282 A JP 19996282A JP S5989462 A JPS5989462 A JP S5989462A
Authority
JP
Japan
Prior art keywords
thyristor
pilot
emitter
thyristors
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57199962A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136712B2 (cs
Inventor
Hiromichi Ohashi
大橋　弘道
Yoshihiro Yamaguchi
好広 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57199962A priority Critical patent/JPS5989462A/ja
Priority to DE8383108506T priority patent/DE3374740D1/de
Priority to EP83108506A priority patent/EP0108874B1/en
Priority to US06/527,477 priority patent/US4595939A/en
Priority to CA000436498A priority patent/CA1188820A/en
Priority to CS836649A priority patent/CS254968B2/cs
Publication of JPS5989462A publication Critical patent/JPS5989462A/ja
Publication of JPH0136712B2 publication Critical patent/JPH0136712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
JP57199962A 1982-11-15 1982-11-15 サイリスタ Granted JPS5989462A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP57199962A JPS5989462A (ja) 1982-11-15 1982-11-15 サイリスタ
DE8383108506T DE3374740D1 (en) 1982-11-15 1983-08-29 Radiation-controllable thyristor
EP83108506A EP0108874B1 (en) 1982-11-15 1983-08-29 Radiation-controllable thyristor
US06/527,477 US4595939A (en) 1982-11-15 1983-08-29 Radiation-controllable thyristor with multiple, non-concentric amplified stages
CA000436498A CA1188820A (en) 1982-11-15 1983-09-12 Radiation-controllable thyristor
CS836649A CS254968B2 (en) 1982-11-15 1983-09-13 Radiation-controllable semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57199962A JPS5989462A (ja) 1982-11-15 1982-11-15 サイリスタ

Publications (2)

Publication Number Publication Date
JPS5989462A true JPS5989462A (ja) 1984-05-23
JPH0136712B2 JPH0136712B2 (cs) 1989-08-02

Family

ID=16416496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57199962A Granted JPS5989462A (ja) 1982-11-15 1982-11-15 サイリスタ

Country Status (1)

Country Link
JP (1) JPS5989462A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5637886A (en) * 1994-02-24 1997-06-10 Mitsubishi Denki Kabushiki Kaisha Thyristor with improved dv/dt resistance

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120279A (cs) * 1974-02-18 1975-09-20
JPS5183784A (cs) * 1974-12-10 1976-07-22 Siemens Ag

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120279A (cs) * 1974-02-18 1975-09-20
JPS5183784A (cs) * 1974-12-10 1976-07-22 Siemens Ag

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5637886A (en) * 1994-02-24 1997-06-10 Mitsubishi Denki Kabushiki Kaisha Thyristor with improved dv/dt resistance

Also Published As

Publication number Publication date
JPH0136712B2 (cs) 1989-08-02

Similar Documents

Publication Publication Date Title
US12212146B2 (en) Solar cell assembly
US5223044A (en) Solar cell having a by-pass diode
EP2294669B1 (en) Direct current power combiner
US3893153A (en) Light activated thyristor with high di/dt capability
US20040012033A1 (en) Semiconductor LED device and method for manufacturing the same
DE102010036187A1 (de) Eingekapselte, fotovoltaische Konzentrations-System-Subanordnung für III-V Halbleitersolarzellen
AU2006242570B2 (en) Solar cell array with isotype-heterojunction diode
JPH0786508A (ja) Ｅｓｄ保護回路
US4916323A (en) Optical control circuit and a semiconductor device for realizing same
US20040085692A1 (en) Method and apparatus to protect solar cells from electronstatic discharge damage
US7687870B2 (en) Laterally configured electrooptical devices
JPS5989462A (ja) サイリスタ
US4595939A (en) Radiation-controllable thyristor with multiple, non-concentric amplified stages
KR20190112841A (ko) 광전 변환 소자 관리 방법 및 시스템
US20240014302A1 (en) Bidirectional thyristor device with asymmetric characteristics
JPS5989461A (ja) サイリスタ
JPH0136262B2 (cs)
US5804841A (en) Optical trigger thyristor and fabrication method
US20230411503A1 (en) Module comprising a switchable bypass device
JPS5976483A (ja) 光電変換半導体装置
JPS596771A (ja) ゲ−トタ−ンオフサイリスタ装置
JPH0136261B2 (cs)
JPS58118151A (ja) 双方向性半導体スイツチ素子
CN118103995A (zh) 光电器件
JPH01286370A (ja) 半導体サージ保護素子