JPS5988834A - 液相エピタキシヤル成長装置 - Google Patents

液相エピタキシヤル成長装置

Info

Publication number
JPS5988834A
JPS5988834A JP57199421A JP19942182A JPS5988834A JP S5988834 A JPS5988834 A JP S5988834A JP 57199421 A JP57199421 A JP 57199421A JP 19942182 A JP19942182 A JP 19942182A JP S5988834 A JPS5988834 A JP S5988834A
Authority
JP
Japan
Prior art keywords
substrate
container
silica
sludge
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57199421A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0475652B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kenji Maruyama
研二 丸山
Michiharu Ito
伊藤　道春
Tomoshi Ueda
知史 上田
Mitsuo Yoshikawa
吉河　満男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57199421A priority Critical patent/JPS5988834A/ja
Publication of JPS5988834A publication Critical patent/JPS5988834A/ja
Publication of JPH0475652B2 publication Critical patent/JPH0475652B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02411—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
JP57199421A 1982-11-12 1982-11-12 液相エピタキシヤル成長装置 Granted JPS5988834A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57199421A JPS5988834A (ja) 1982-11-12 1982-11-12 液相エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57199421A JPS5988834A (ja) 1982-11-12 1982-11-12 液相エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS5988834A true JPS5988834A (ja) 1984-05-22
JPH0475652B2 JPH0475652B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-12-01

Family

ID=16407521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57199421A Granted JPS5988834A (ja) 1982-11-12 1982-11-12 液相エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS5988834A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5325317A (en) * 1976-08-13 1978-03-09 Kokusai Electric Co Ltd Data item input device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5325317A (en) * 1976-08-13 1978-03-09 Kokusai Electric Co Ltd Data item input device

Also Published As

Publication number Publication date
JPH0475652B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-12-01

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