JPS5988828A - Cleaning device - Google Patents

Cleaning device

Info

Publication number
JPS5988828A
JPS5988828A JP19921682A JP19921682A JPS5988828A JP S5988828 A JPS5988828 A JP S5988828A JP 19921682 A JP19921682 A JP 19921682A JP 19921682 A JP19921682 A JP 19921682A JP S5988828 A JPS5988828 A JP S5988828A
Authority
JP
Japan
Prior art keywords
nozzle
high pressure
hole
water droplets
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19921682A
Other languages
Japanese (ja)
Inventor
Nobuhaya Takebashi
信逸 竹橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP19921682A priority Critical patent/JPS5988828A/en
Publication of JPS5988828A publication Critical patent/JPS5988828A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Abstract

PURPOSE:To perform good cleaning without preventing extra high pressure water jet by water droplets adhering to a nozzle by arranging a sucking hole around an aperture of the nozzle. CONSTITUTION:A substrate 17 is rotated with being fixed to a table 18 whereas a pressure pump jets extra high pressure water jet 16 through an end thin hole 12 of a nozzle 11, thereby cleaning the substrate. At this time, minute particles of water 19 are generated and water droplets 20 adheres to the nozzle 11. Then a hole 13 which is sucked vacuously by a device 14 is arranged around the nozzle end thin hole 12 to suck up covering water droplets 20. The vacuum hole 13 is preferably porous. This constitution enables good cleaning without preventing extra high pressure water jet by water droplets.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はノズル先端の開孔部より水流を噴射し洗浄を行
う洗浄装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a cleaning device that performs cleaning by spraying a water stream from an opening at the tip of a nozzle.

従来例の構成とその問題点 現在の半導体基板の洗浄は、前記半導体基板上に形成し
た素子に影響を及ぼすことが無く効率の良い高速な洗浄
が可−目なジェットスクラバーによる洗浄方法が主流と
なっている。これはノズル先端の細一部(φ400μm
)より高圧ポンプで数1oOKり/ crriに加圧し
た洗浄水を噴射し洗浄を行なうもので、良好な洗浄効果
を得るにはノズル先端細孔部は耐層性にすぐれたザファ
イヤ等が用いられ常にシャープな超高圧水流を噴射する
ことが必要であった。
Conventional configuration and problems The current mainstream method for cleaning semiconductor substrates is to use jet scrubbers, which do not affect the elements formed on the semiconductor substrate and can perform efficient and high-speed cleaning. It has become. This is a small part of the nozzle tip (φ400μm
) A high-pressure pump is used to spray water pressurized to several degrees or crri for cleaning, and in order to obtain a good cleaning effect, the pores at the nozzle tip are made of zaphire, etc., which has excellent layer resistance. It was necessary to constantly jet a sharp ultra-high pressure water stream.

以下に従来の問題点を図面を用いて説明する。The conventional problems will be explained below with reference to the drawings.

第1図Aにおいて、1はノズル、2は先端細孔部、3は
加圧ポンプ、4は超高圧水流、6C1半導体基板、6は
真空チャックテーブル、7は水の微粒子である。
In FIG. 1A, 1 is a nozzle, 2 is a tip pore, 3 is a pressure pump, 4 is an ultra-high pressure water stream, 6C1 semiconductor substrate, 6 is a vacuum chuck table, and 7 is water particles.

半導体基板5を真空チャックテーブル6に固定回転させ
加圧ポンプ3によってノズル1の先端+f:(It孔部
2から超高圧水流4を噴射し、半導体基板5の洗浄を行
う。この時、先端細孔部2から噴射した超高圧水流4で
半導体基板6を洗浄中水の微粒子7が発生する。同図B
に示すように水の微粒子7のためノズル1に水滴8が付
着しノズル1の先端細孔部2におおいかぶさった状態と
なり、シャープな超高圧水流が得られず広がった状態の
]!I(射4が行なわれ洗浄能力が著しく低下する。又
、ノズル1に付着した水滴8、洗浄時、半導体基板53
7−1、 の表面に滴下し、洗浄効果を損うことがあった。
The semiconductor substrate 5 is fixed and rotated on a vacuum chuck table 6, and the tip of the nozzle 1 +f:(It) is sprayed from the hole 2 with an ultra-high pressure water stream 4 to clean the semiconductor substrate 5. At this time, the tip of the nozzle 1 is While cleaning the semiconductor substrate 6 with the ultra-high pressure water stream 4 jetted from the hole 2, water particles 7 are generated.
As shown in the figure, water droplets 8 adhere to the nozzle 1 due to the water particles 7, and the tip pores 2 of the nozzle 1 are covered with a large amount, making it impossible to obtain a sharp ultra-high-pressure water flow and causing the water droplets to spread]! In addition, the water droplets 8 adhering to the nozzle 1 and the semiconductor substrate 53 are removed during cleaning.
7-1, it could drip onto the surface of the , impairing the cleaning effect.

発明の目的 本発明は上記従来の問題点を解消すべく洗浄の際ノズル
に付着する水滴で超高圧水流が妨げられることなく良好
な洗浄を行なう洗浄装置を提供するものである。
OBJECTS OF THE INVENTION In order to solve the above-mentioned conventional problems, the present invention provides a cleaning device that performs good cleaning without the ultra-high pressure water flow being obstructed by water droplets adhering to the nozzle during cleaning.

発明の構成 本発明は水流を開孔部より噴射するノズルの前記開口部
周辺に吸引孔を設けることを特徴とするものである。
Structure of the Invention The present invention is characterized in that a suction hole is provided around the opening of a nozzle that sprays a water stream from the opening.

実施例の説明 本発明の実施例を図面を用いて説明する。Description of examples Embodiments of the present invention will be described using the drawings.

第2図Aで11はノズル、12は先端細孔部、13は吸
引孔、14は真空発生装置、16は加圧ポンプ、16は
超高圧水流、17は半導体基板、18は真空チャックテ
ーブル、19は水の微粒子である。
In FIG. 2A, 11 is a nozzle, 12 is a tip pore, 13 is a suction hole, 14 is a vacuum generator, 16 is a pressure pump, 16 is an ultra-high pressure water stream, 17 is a semiconductor substrate, 18 is a vacuum chuck table, 19 is a water particle.

半導体基板17を真空チャックテーブル18に固定9回
転させ、加圧ポンプ16によってノズル11の先端細孔
部12から超高圧水流16を噴射し、半導体基板17の
洗浄を行う。この時、先端細孔部12から鳴゛射した超
高圧水流16で半導体基板17の洗浄中水の微粒子が発
生し、同図Bに示すとおり、ノズル11に水滴20が付
着する。
The semiconductor substrate 17 is fixed to the vacuum chuck table 18 and rotated nine times, and the pressure pump 16 sprays an ultra-high pressure water stream 16 from the tip pore 12 of the nozzle 11 to clean the semiconductor substrate 17. At this time, fine particles of water are generated during cleaning of the semiconductor substrate 17 by the ultra-high pressure water stream 16 emitted from the tip pore 12, and water droplets 20 adhere to the nozzle 11 as shown in FIG.

しかし、ノズル先端細孔部12周辺には真空発生装置1
4により真空吸引された吸引孔13が設けられており、
そこから先端細孔部12におおいかぶさろうとする水滴
20を吸い上げ除去する。そうすることにより、ノズル
11の先端細孔部12から噴射される超高圧水流16を
妨げることなく良好な洗浄を行なうことが可能となる。
However, the vacuum generator 1 is located around the nozzle tip pore 12.
4 is provided with a suction hole 13 for vacuum suction,
From there, water droplets 20 that try to cover the tip pore 12 are sucked up and removed. By doing so, it becomes possible to perform good cleaning without interfering with the ultra-high pressure water stream 16 jetted from the tip pore portion 12 of the nozzle 11.

なお吸引孔13は図に示すごとく多孔質状のものとする
のが望ましい〇 発明の効果 以上の説明より明らかなとおり、本発明の洗浄装置は洗
浄時に発生する水の微粒子に」:る水滴がノズルに付着
しそれが前記ノズルの先端細部にかかり超高王水流の噴
射を妨げることが無く、良好な洗浄が行なえると共にノ
ズルに付着した水滴が半導体基板表面に滴下することが
無い。
It is preferable that the suction hole 13 is porous as shown in the figure.Effects of the InventionAs is clear from the above explanation, the cleaning device of the present invention has the advantage that the water droplets generated during cleaning are It does not adhere to the nozzle and impede the jetting of the ultra-high aqua regia flow, and water droplets adhering to the nozzle do not drip onto the surface of the semiconductor substrate.

5 1、−・5 1, -・

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(A) 、 (B)はそれぞれ従来の洗浄装置の
概略構成図、ノズル部の植略図、第2図fA) 、 (
B)はそれぞれ本発明の一実施例の洗浄装置の概略構成
図。 ノズル部の概略図である。 11・・・・・・ノズル、12・・・・・・先細孔部、
13・・・・・・吸引孔、14・・・・・・真空発生装
置、16・・・・・・超高圧水流、17・・・・・・半
導体基板、19・・・・・・水の微粒子、20・・・・
・・水滴。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第五
図 (A) (B)
Figures 1 (A) and (B) are a schematic diagram of a conventional cleaning device, a schematic diagram of a nozzle section, and Figure 2 fA), (
B) is a schematic configuration diagram of a cleaning device according to an embodiment of the present invention. It is a schematic diagram of a nozzle part. 11...Nozzle, 12...Tapered hole part,
13...Suction hole, 14...Vacuum generator, 16...Ultra high pressure water stream, 17...Semiconductor substrate, 19...Water fine particles, 20...
...Water drops. Name of agent: Patent attorney Toshio Nakao and one other person Figure 5 (A) (B)

Claims (2)

【特許請求の範囲】[Claims] (1)水流を開孔部より噴射するノズルの前記開口部周
辺に吸引孔を設けることを特徴とする洗浄装置。
(1) A cleaning device characterized in that a suction hole is provided around the opening of a nozzle that sprays water from the opening.
(2)吸引孔が多孔であることを特徴とする特許請求の
範囲第1項記載の洗浄装置。
(2) The cleaning device according to claim 1, wherein the suction holes are porous.
JP19921682A 1982-11-12 1982-11-12 Cleaning device Pending JPS5988828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19921682A JPS5988828A (en) 1982-11-12 1982-11-12 Cleaning device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19921682A JPS5988828A (en) 1982-11-12 1982-11-12 Cleaning device

Publications (1)

Publication Number Publication Date
JPS5988828A true JPS5988828A (en) 1984-05-22

Family

ID=16404062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19921682A Pending JPS5988828A (en) 1982-11-12 1982-11-12 Cleaning device

Country Status (1)

Country Link
JP (1) JPS5988828A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6467916A (en) * 1987-09-08 1989-03-14 Tokyo Electron Ltd Resist discharge nozzle
US5785068A (en) * 1995-05-11 1998-07-28 Dainippon Screen Mfg. Co., Ltd. Substrate spin cleaning apparatus
WO2001040562A1 (en) * 1999-12-01 2001-06-07 Rieter Perfojet Device for treating sheet material with water jets under pressure
EP1610363A1 (en) * 2003-04-01 2005-12-28 Tokyo Electron Limited Method of heat treatment and heat treatment apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6467916A (en) * 1987-09-08 1989-03-14 Tokyo Electron Ltd Resist discharge nozzle
US5785068A (en) * 1995-05-11 1998-07-28 Dainippon Screen Mfg. Co., Ltd. Substrate spin cleaning apparatus
WO2001040562A1 (en) * 1999-12-01 2001-06-07 Rieter Perfojet Device for treating sheet material with water jets under pressure
FR2801909A1 (en) * 1999-12-01 2001-06-08 Icbt Perfojet Sa DEVICE FOR THE TREATMENT OF SHEET MATERIALS USING PRESSURE WATER JETS
EP1610363A1 (en) * 2003-04-01 2005-12-28 Tokyo Electron Limited Method of heat treatment and heat treatment apparatus
EP1610363A4 (en) * 2003-04-01 2008-05-14 Tokyo Electron Ltd Method of heat treatment and heat treatment apparatus

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