JPS598339A - Corroding device - Google Patents
Corroding deviceInfo
- Publication number
- JPS598339A JPS598339A JP11751582A JP11751582A JPS598339A JP S598339 A JPS598339 A JP S598339A JP 11751582 A JP11751582 A JP 11751582A JP 11751582 A JP11751582 A JP 11751582A JP S598339 A JPS598339 A JP S598339A
- Authority
- JP
- Japan
- Prior art keywords
- pipe
- nose
- wall
- wiring
- arranged concentrically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Abstract
Description
【発明の詳細な説明】 本発明は腐蝕装置の構造に関するものである。[Detailed description of the invention] The present invention relates to the structure of an etching device.
従来、半導体基板上に電気的に接続して形成された多数
個の素子の中の不良素子を他の素子と電気的に分離して
不良解析を行う場合において、その分離方法としてフォ
トレジスト処理と化学的エツチングの組合せによって分
離する方法がとられてきた。Conventionally, when performing failure analysis by electrically isolating a defective element among a large number of elements electrically connected and formed on a semiconductor substrate from other elements, photoresist processing has been used as a separation method. Separation methods have been used in combination with chemical etching.
第１図は従来の分離方法を示した図である。図中、例え
ば、ドレイン３とソース２′を電気的に接続するアルミ
配線６を分離する必要のある場合は公知の７オトレジス
ト処理を施し、分離の不必要な部分に７オトレジスト被
膜７を形成し、ドレイン３とソース２′を電気的に接続
しているアルミ配線６の一部分６ｂをリン酸によシ腐蝕
除去することによシトレイン３とソース２′を電気的に
分離する方法がとられていた。FIG. 1 is a diagram showing a conventional separation method. In the figure, for example, if it is necessary to separate the aluminum wiring 6 that electrically connects the drain 3 and the source 2', a known 7-to-resist process is applied, and a 7-to-resist film 7 is formed in the part where separation is unnecessary. A method has been adopted in which the drain 3 and the source 2' are electrically separated by etching away a portion 6b of the aluminum wiring 6 that electrically connects the drain 3 and the source 2' with phosphoric acid. Ta.
前記方法による分離方法では、フォトレジスト処理を必
要とし、かつ精度よく分離する場合は専用に製作された
フォトマスクを用いてフォトレジスト処理を行わなけれ
ばならないが実際には腐蝕除去すべき部分は予め予測で
きないので工数の増大、材料費の増大が生じる欠点があ
った。また、半導体容器に組込まれた半導体集積回路の
不良解析を行う為に分離する場合は、前記フォトレジス
ト処理による方法では、分離することが難しい、更にウ
ェハー上の特定のチップの不良解析を行う場合もフォト
マスクを用いる方法を適用することは出来ない。The separation method described above requires photoresist treatment, and in order to achieve accurate separation, the photoresist treatment must be performed using a specially manufactured photomask. Since it cannot be predicted, it has the drawback of increasing man-hours and material costs. In addition, when separating a semiconductor integrated circuit incorporated in a semiconductor container for failure analysis, it is difficult to separate it using the photoresist processing method, and furthermore, when performing failure analysis of a specific chip on a wafer. However, the method using a photomask cannot be applied.
本発明は先端部に管径の異なる２種類の管を同芯状に配
し、かつ内側の管の外壁と外側の管の内壁との間に一定
の間隔を有し更に該内側の管の先端が外側の管の先端よ
りも内側に位置する構造を有する腐蝕用ノズルを備えた
ことを特徴とする腐蝕装置を提供するものである。In the present invention, two types of tubes having different diameters are disposed concentrically at the tip, and there is a certain distance between the outer wall of the inner tube and the inner wall of the outer tube. The present invention provides an etching device characterized in that it is equipped with an etching nozzle having a structure in which the tip is located inside the tip of the outer tube.
本発明を実施例によシ説明する。第２図は、本発明の１
実施例の腐蝕装置のノズルの構造を説明する断面図であ
る。The present invention will be explained by way of examples. FIG. 2 shows the first embodiment of the present invention.
It is a sectional view explaining the structure of the nozzle of the corrosive device of an example.
第２図に示すように外側の管８の中に前記管８の内径よ
シも小さい外径を有する管９を同芯状に配置し、かつ外
側の管８の内壁と管９の外壁との間に一定の間隔を保つ
ように配置した構造を有している。尚この図で何カ１０
０は送出を示し、何カ２００は吸入を示している。As shown in FIG. 2, a tube 9 having an outer diameter smaller than the inner diameter of the tube 8 is arranged concentrically in the outer tube 8, and the inner wall of the outer tube 8 and the outer wall of the tube 9 are arranged concentrically. It has a structure in which it is arranged so that a constant interval is maintained between the two. In this diagram, how many numbers are 10?
0 indicates delivery and 200 indicates inhalation.
次に第３図に示すように本発明の腐蝕装置を用いてドレ
イン１３とソース１２′を電気的に接続しているアルミ
配線１６ｂを除去する方法を述べる。Next, a method of removing the aluminum wiring 16b electrically connecting the drain 13 and the source 12' using the etching apparatus of the present invention as shown in FIG. 3 will be described.
例えば、アルミ配線ｘ６ｂｔｉ去しようとする場合、本
発明の腐蝕装置の外側の管８と内側の管９の開口部をア
ルミ配線１６ｂ上に近づけ内側の管９からリン酸を送出
し、アルミ配線１６ｂに吹きつけアルミ配線１６ｂを腐
蝕除去する。そして、内側の管９よシ送出されたリン酸
は内側の管９の′外壁と外側の管８の内壁とによって形
成される間隙開口部から周囲に飛散させることなく吸入
し、必要以外の部分の腐蝕を防ぐことができる。For example, when attempting to remove 6 bti of aluminum wiring, the openings of the outer tube 8 and inner tube 9 of the corrosion apparatus of the present invention are brought close to the aluminum wiring 16b, and phosphoric acid is sent from the inner tube 9, and the aluminum wiring 16b is to remove corrosion from the aluminum wiring 16b. The phosphoric acid sent out through the inner tube 9 is sucked in through the gap opening formed by the outer wall of the inner tube 9 and the inner wall of the outer tube 8 without scattering to the surroundings, and is removed from unnecessary parts. can prevent corrosion.
上記実施例では被腐蝕物としてアルミを腐蝕除去する場
合について説明したが、腐蝕液を選択することによシ、
Ｓｉ、 ８１０． 、８ｉ、Ｎ、を選択的に腐蝕除去す
ることも可能である。In the above embodiment, the case where aluminum is removed by corrosion is explained, but by selecting the corrosive liquid,
Si, 810. , 8i, N, can also be selectively etched away.
以上詳細に説明したように、本発明の腐蝕装置を用いる
ことによりフォトレジスト処理および専用フォトマスク
の製作を行わずして所望の部分のみを選択的に腐蝕除去
して、半導体集積回路の構成素子を電気的に分離するこ
とができる。また、半導体容器に組込まれた半導体集積
回路の不良解析を行う為に分離しようとする場合もこの
腐蝕装置を用いて行うことができる。更に、ウニノー−
上の１部分の不良解析を行う場合も他の必要以外の
（チップを犠牲にすることなく分離することができる。As explained in detail above, by using the etching apparatus of the present invention, only desired portions can be selectively etched away without performing photoresist processing or manufacturing of a dedicated photomask, thereby removing components of semiconductor integrated circuits. can be electrically isolated. Furthermore, this corrosion apparatus can also be used to separate a semiconductor integrated circuit incorporated in a semiconductor container for failure analysis. Furthermore, Uni-no-
When performing failure analysis of the above part, other non-necessary
(Can be separated without sacrificing the chip.
１1
第１図は従来のフォトレジスト処理を施して分離する場
合の１例の断面図、第２図は本発明による腐蝕装置の１
実施例の腐蝕装置の構造を説明する断面図、第３図は本
発明による腐蝕装置の１実施例の腐蝕装置を用いて分離
する方法を説明する断面図である。
尚、１，１１・・・・・・半導体基板、２，１２・・・
・・・ソース、３，１３・・・・・・ドレイン、４．１
４・・・・・・酸化物層、５，１５・・・・・・ポリシ
リ層、６ａ、５ｂ。
１６ａ、１６ｂ・・・・・・アルミニウム、７・・・・
・・フォトレジスト被膜、８・・・・・・外側の管、９
・・・・・・内側の管１００・・・・・・送出、２００
・・・・・・吸入である。
シ
（
半 １ 菌
（FIG. 1 is a cross-sectional view of an example of separation using conventional photoresist processing, and FIG. 2 is a cross-sectional view of an example of separation using a conventional photoresist process.
FIG. 3 is a sectional view illustrating the structure of the corrosive apparatus according to the present invention. FIG. 3 is a cross-sectional view illustrating a separation method using the corrosive apparatus according to the present invention. In addition, 1, 11... semiconductor substrate, 2, 12...
...Source, 3,13...Drain, 4.1
4... Oxide layer, 5, 15... Polysilicon layer, 6a, 5b. 16a, 16b... Aluminum, 7...
...Photoresist coating, 8...Outer tube, 9
...Inner tube 100 ... Delivery, 200
・・・・・・Inhalation. (half 1 bacteria)
Claims (1)
内側の管の外壁と外側の管の内壁との間に一定の間隔を
有し、さらに該内側の管の先端が外側の管の先端よシも
内側に位置する構造を有する腐蝕用ノズルを備えたこと
を特徴とする腐蝕装置。Two types of tubes with different diameters are arranged concentrically at the tip, and there is a certain distance between the outer wall of the inner tube and the inner wall of the outer tube, and the tip of the inner tube is arranged concentrically. A corrosive device characterized by comprising a corrosive nozzle having a structure in which the tip of the outer tube is also located inside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11751582A JPS598339A (en) | 1982-07-06 | 1982-07-06 | Corroding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11751582A JPS598339A (en) | 1982-07-06 | 1982-07-06 | Corroding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS598339A true JPS598339A (en) | 1984-01-17 |
Family
ID=14713668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11751582A Pending JPS598339A (en) | 1982-07-06 | 1982-07-06 | Corroding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS598339A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7177384B2 (en) | 1999-09-09 | 2007-02-13 | Mitsubishi Heavy Industries, Ltd. | Aluminum composite material, manufacturing method therefor, and basket and cask using the same |
-
1982
- 1982-07-06 JP JP11751582A patent/JPS598339A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7177384B2 (en) | 1999-09-09 | 2007-02-13 | Mitsubishi Heavy Industries, Ltd. | Aluminum composite material, manufacturing method therefor, and basket and cask using the same |
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