JPS5982777A - Amorphous thin film solar battery - Google Patents
Amorphous thin film solar batteryInfo
- Publication number
- JPS5982777A JPS5982777A JP57193003A JP19300382A JPS5982777A JP S5982777 A JPS5982777 A JP S5982777A JP 57193003 A JP57193003 A JP 57193003A JP 19300382 A JP19300382 A JP 19300382A JP S5982777 A JPS5982777 A JP S5982777A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- roughnesses
- thin film
- amorphous thin
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000011521 glass Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 3
- 239000002253 acid Substances 0.000 abstract description 2
- 235000019592 roughness Nutrition 0.000 abstract 7
- 238000005299 abrasion Methods 0.000 abstract 1
- 239000003082 abrasive agent Substances 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 239000000344 soap Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
基板の表面粗さと薄膜太陽電池の関係をＬｔ、し、その
最適の表面粗さを提供するものである。DETAILED DESCRIPTION OF THE INVENTION The relationship between the surface roughness of an industrial application substrate and a thin film solar cell is defined as Lt, and the optimum surface roughness thereof is provided.
従来例の構成とその問題点
従来、この種の非晶質薄膜形成の基板は薄膜が剥離しな
い程度の表面粗さでよいということで、表面粗さを５０
０Å以下に押えていた。そしてその表面処理は、■基板
の水洗、■有機溶剤処理、■水洗、■乾燥の工程を経て
行われていた。この工程を経たガラス基板の表面は微視
的にみて極めてなめらかであシ、この上に形成した酸化
インジウムや酸化錫等は電子顕微鏡観察では５００人以
２Ａ°−ジ
下である。従来、この基板の表面粗さと光電変換率につ
いて言及された例はない。Conventional structure and its problems Conventionally, the surface roughness of substrates for forming this type of amorphous thin film was set at 50%, because the surface roughness was sufficient to prevent the thin film from peeling off.
It was kept below 0 Å. The surface treatment was performed through the following steps: (1) washing the substrate with water, (2) treating it with an organic solvent, (2) washing with water, and (2) drying. The surface of the glass substrate that has undergone this process is microscopically extremely smooth, and the indium oxide, tin oxide, etc. formed thereon are observed under an electron microscope of 500 or more 2A°. Conventionally, there has been no mention of the surface roughness and photoelectric conversion rate of this substrate.
発明の目的 基板表面の粗さを特定し光電変換率の向上をはかる。purpose of invention Identify the roughness of the substrate surface and aim to improve the photoelectric conversion rate.
発明の構成
基板上に透明電極、非晶質薄膜材料を形成するに際し、
基板の表面粗さを５００〜３０００人の凹凸にする。When forming transparent electrodes and amorphous thin film materials on the constituent substrate of the invention,
The surface roughness of the substrate is made to have an unevenness of 500 to 3000.
実施例の説明
ガラス基板を第１図に示すプロセスによ多処理する。ま
ず水洗し、ＨＦ溶液やＮａＯＨ溶液等の酸やアルカリ溶
液でエツチングする。そして水洗、乾燥させる。この基
板処理プロセスによシガラス基板表面に５００人〜３０
００人程度の凹凸を設ける０この凹凸を設けたガラス基
板上に酸化インジウムや酸化錫等の透明電極を５００λ
〜１０００λ程度形成すると、基板表面の凹凸を反映し
て透明電極表面もやはシロ００人〜３０００人程度の凹
凸が生じる。DESCRIPTION OF THE EMBODIMENTS A glass substrate is processed by the process shown in FIG. First, it is washed with water and etched with an acid or alkaline solution such as HF solution or NaOH solution. Then wash with water and dry. This substrate treatment process produces 500 to 30 particles on the surface of the glass substrate.
A transparent electrode made of indium oxide, tin oxide, etc. is placed on a glass substrate with a thickness of 500 λ on the glass substrate with this unevenness.
When a thickness of about 1,000 λ is formed, the surface of the transparent electrode becomes uneven by about 00 to 3,000 λ, reflecting the unevenness of the substrate surface.
３１−
なお、ガラス基板表面に凹凸を設ける方法は研磨剤によ
る機械的研磨によっても可能である。31- Note that mechanical polishing using an abrasive can also be used to provide unevenness on the surface of the glass substrate.
第２図は従来の基板を用いてＰ、Ｉ、Ｎ層等を形成した
アモルファス太陽電池イと、上記実施例の基板を用いて
作成したアモルファス太陽電池口の開放電圧ＶＯＣと短
絡電流’Ｔｓｃの関係を示す図である。この出力特性は
白色螢光灯下１５０ルック７腐の条件で測定した。従来
例より本発明の一実施例の太陽電池の方が短絡電流Ｊｓ
ｃ、開放電圧ＶＯＣともに高く、したがって最大変換効
率点−ｓｘ 点も高い。なお、３０００Å以上の凹凸
の場合はＰＩＮ層を形成すると接合が悪くなり、このた
めに変換効率が低下する。Figure 2 shows an amorphous solar cell in which P, I, N layers, etc. are formed using a conventional substrate, and an open circuit voltage VOC and a short circuit current 'Tsc at the amorphous solar cell opening made using the substrate of the above example. It is a figure showing a relationship. This output characteristic was measured under a white fluorescent light condition of 150 looks and 7 degrees. The solar cell according to the embodiment of the present invention has a higher short-circuit current Js than the conventional example.
Both c and open circuit voltage VOC are high, and therefore the maximum conversion efficiency point -sx is also high. Note that in the case of irregularities of 3000 Å or more, forming a PIN layer will cause poor bonding, resulting in a reduction in conversion efficiency.
第３図は基板表面の粗さと、それを用いたアモルファス
薄膜太陽電池の変換効率の関係を示すものであり、６０
０〜３０００ Ａの間で変換効率のよいことがわかる。Figure 3 shows the relationship between the roughness of the substrate surface and the conversion efficiency of an amorphous thin film solar cell using the same.
It can be seen that the conversion efficiency is good between 0 and 3000 A.
なお３０００Å以上の凹凸ではＰＩＮ層の接合状態が悪
くなる。Note that if the unevenness is 3000 Å or more, the bonding state of the PIN layer will deteriorate.
発明の効果
アモルファスシリコン層が形成される基板表面の粗さを
特定し光電変換効率を高めることができる。Effects of the Invention It is possible to specify the roughness of the substrate surface on which an amorphous silicon layer is formed and to improve the photoelectric conversion efficiency.
第１図は本発明の一実施例のアモルファス簿膜太陽電池
に用いる基板の処理過程を示す図、第２図は従来例と本
発明の一実施例のアモルファス薄膜太陽電池の出力特性
を示す図、第３図は基板の表面の凹凸の程度とそれを用
いたアモルファス薄膜太陽電池の変換効率の関係を示す
図である。
イ・・・・・・従来例、口・・・・・・本発明の一実施
例。Fig. 1 is a diagram showing the processing process of a substrate used in an amorphous thin film solar cell according to an embodiment of the present invention, and Fig. 2 is a diagram showing the output characteristics of a conventional example and an amorphous thin film solar cell according to an embodiment of the present invention. , FIG. 3 is a diagram showing the relationship between the degree of unevenness on the surface of a substrate and the conversion efficiency of an amorphous thin film solar cell using the same. A: Conventional example, A: An embodiment of the present invention.
Claims (1)
よびアモルファス薄膜層を設けたアモルファス薄膜太陽
電池。An amorphous thin film solar cell in which an electrode and an amorphous thin film layer are provided on a substrate whose surface has a roughness of 500 to 3000 people.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57193003A JPS5982777A (en) | 1982-11-02 | 1982-11-02 | Amorphous thin film solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57193003A JPS5982777A (en) | 1982-11-02 | 1982-11-02 | Amorphous thin film solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5982777A true JPS5982777A (en) | 1984-05-12 |
Family
ID=16300587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57193003A Pending JPS5982777A (en) | 1982-11-02 | 1982-11-02 | Amorphous thin film solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5982777A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2596753A1 (en) * | 1986-04-08 | 1987-10-09 | Glaverbel | MATE GLASS, MATE GLASS MANUFACTURING METHOD, PHOTOVOLTAIC CELL COMPRISING SUCH A GLASS, AND METHOD OF MANUFACTURING SUCH A CELL |
-
1982
- 1982-11-02 JP JP57193003A patent/JPS5982777A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2596753A1 (en) * | 1986-04-08 | 1987-10-09 | Glaverbel | MATE GLASS, MATE GLASS MANUFACTURING METHOD, PHOTOVOLTAIC CELL COMPRISING SUCH A GLASS, AND METHOD OF MANUFACTURING SUCH A CELL |
| BE1001108A4 (en) * | 1986-04-08 | 1989-07-18 | Glaverbel | Matt glass, method of manufacturing glass mate, photovoltaic cell including such glass and method for making such a cell. |
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