CN210429835U - InP-graphene solar cell - Google Patents
InP-graphene solar cell Download PDFInfo
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- CN210429835U CN210429835U CN201921584414.8U CN201921584414U CN210429835U CN 210429835 U CN210429835 U CN 210429835U CN 201921584414 U CN201921584414 U CN 201921584414U CN 210429835 U CN210429835 U CN 210429835U
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Abstract
The utility model belongs to porous solar cell field discloses an InP-graphite alkene solar cell. The InP-graphene solar cell comprises an Au back electrode, an InP epitaxial layer and TiO which are sequentially stacked from bottom to top2Hole blocking layer, graphene layer and Al2O3An anti-reflective layer; surrounding Al2O3The antireflection layer is provided with a circle of Ag contact electrodes which are in contact with the graphene layer. The utility model discloses set up titanium dioxide hole barrier layer on indium phosphide, utilize titanium dioxide band structure with increase photovoltaic element's carrier mobility to increase the life-span of minority carrier, and attach high luminousness, carrier transmission rate fast, the higher graphite alkene of work function in titanium dioxide top, utilize the potential energy of the poor further increase carrier of energy level gradient, thereby improve indium phosphide battery's conversion efficiency.
Description
Technical Field
The utility model belongs to porous solar cell field, concretely relates to InP-graphite alkene solar cell.
Background
The energy problem is a great challenge facing all countries in the world, and the high-efficiency solar photovoltaic technology is used as an important advanced productivity for supporting national economy, sustainable development strategy and improving national international competitiveness, and becomes a crucial development direction in the long-term development and planning of national science and technology. Therefore, the development of high-efficiency solar photovoltaic technology, the improvement of the photoelectric conversion efficiency of the solar cell and the enhancement of the practicability of the solar cell are not easy.
Heretofore, solar cell processes mainly using indirect bandgap semiconductor materials such as Si-based and Ge-based materials have become mature, and further, improvement of photoelectric conversion efficiency is greatly limited due to the properties of the materials themselves. The application of the III-V group compound semiconductor material mainly based on GaAs in the photovoltaic field is fully valued and popularized. However, the GaAs surface has a high carrier recombination rate, which results in low photoelectric conversion efficiency of the GaAs solar cell, and the high conversion efficiency of the GaAs-based solar cell requires a complex structure and a cumbersome process support, which greatly limits the production and application of the iii-v group compound semiconductor material solar cell based on GaAs. Through the previous research in the solar cell field in the team, the InP-based material has high light absorption coefficient and low surface recombination rate compared with GaAs, so that the InP-based material can be effectively applied to the photovoltaic cell. However, the limit of minority carrier lifetime inside InP limits the power generation efficiency of InP-based solar cells.
SUMMERY OF THE UTILITY MODEL
To the shortcoming and the weak point that above prior art exists, the utility model discloses a first order provides an InP-graphite alkene solar cell.
Another object of the present invention is to provide a method for manufacturing the InP-graphene solar cell.
The utility model discloses the purpose is realized through following technical scheme:
an InP-graphene solar cell comprises an Au back electrode, an InP epitaxial layer and TiO which are sequentially stacked from bottom to top2Hole blocking layer, graphene layer and Al2O3An anti-reflective layer; surrounding Al2O3The antireflection layer is provided with a circle of Ag contact electrodes, and the Ag contact electrodes are in contact with the graphene layer.
Further, the InP epitaxial layer is a Zn-doped InP epitaxial layer, the crystal orientation is (100), and the Zn doping concentration is 6 multiplied by 1017～6×1018/cm3The carrier mobility is 100-200 cm2/(v·s)。
Further, the thickness of the Au back electrode is 100-200 nm, the thickness of the InP epitaxial layer is 0.35-1.2 mm, and the thickness of the TiO layer is2The thickness of the hole blocking layer is 10-20 nm, the thickness of the graphene layer is 5-6 layers of atoms, and Al is2O3The thickness of the antireflection layer is 20-100 nm.
The InP-graphene solar cell can be prepared by the following method:
(1) cleaning an InP epitaxial layer substrate, then annealing, evaporating a layer of gold on the back surface of the substrate to be used as a back electrode layer, and annealing after evaporation;
(2) evaporating a layer of titanium dioxide on the front surface of the substrate in the step (1) to be used as a hole blocking layer;
(3) transferring graphene onto the hole blocking layer, and drying to obtain a graphene layer;
(4) evaporating and plating a layer of aluminum oxide on the graphene layer to serve as an antireflection layer;
(5) surrounding Al2O3And injecting a circle of liquid silver into the antireflection layer, ensuring that the liquid silver is in contact with the graphene layer, and drying again to obtain the InP-graphene solar cell.
Further, the cleaning in the step (1) is to perform ultrasonic cleaning by using AR-grade acetone, ethanol and ultrapure water in sequence, then rinse by using hydrochloric acid, and finally rinse by using deionized water.
Further, the evaporation rate of the back electrode layer in the step (1) is 0.7-1.5 nm/s.
Further, the annealing treatment in the step (1) is an annealing treatment for 15-25 min when the temperature is raised to 600-1200 ℃.
Further, in the step (2), the evaporation rate of the hole blocking layer is 0.3-0.7 nm/s, the evaporation rate is 3-7 s/circle, and the evaporation temperature is controlled at 20-40 ℃.
Further, the temperature of the drying treatment in the step (3) is 100-140 ℃.
Further, the evaporation rate of the antireflection layer in the step (4) is 0.1-0.4 nm/s.
Further, the drying temperature in the step (5) is 100-120 ℃.
The principle of the utility model is as follows:
a Schottky structure is formed between the p-type InP and the graphene, an electron hole pair is generated by light excitation, electrons are led to an external circuit through the graphene film layer, so that the internal circuit keeps potential difference, a battery effect is generated, meanwhile, the titanium dioxide layer is used as a hole blocking layer, and the diffusion of the holes to the direction of the graphene layer is prevented by introducing a potential barrier into a valence band, so that the potential difference is maintained by the internal circuit, and the photovoltaic conversion efficiency of the solar battery is improved. In addition, a layer of material with the refractive index between that of the substrate material and that of air is evaporated on the InP surface, and the principle of destructive interference of light is utilized to minimize the reflection of light with a certain wavelength. For InP, which has a refractive index around 3.4 in the visible range, whereas air has a refractive index of 1.0, the most suitable refractive index for an antireflective film is around 0.5 times the product of the two, i.e., around 1.8. In addition, in order to obtain a good antireflection effect, the antireflection film does not absorb light in the absorption range of the semiconductor or absorbs light as little as possible, and for InP, the light absorption edge of the antireflection film is generally less than 400nm, that is, the band gap of the antireflection film material is generally required to be greater than 3.0eV, so Al2O3Are suitable antireflective layers.
Compared with the prior art, the utility model has the advantages of as follows and beneficial effect:
(1) a layer of titanium dioxide is used as a hole blocking layer between the p-type indium phosphide and the upper electrode, a layer of graphene is added above the titanium dioxide layer and is used as a transparent conducting layer with high light transmittance and high electron mobility of the solar cell, meanwhile, the energy band bending of the p-InP base region layer is realized, the photovoltaic effect is realized, meanwhile, the light absorption rate and the carrier transmission rate of the solar cell are improved, and therefore the photovoltaic conversion efficiency of the solar cell is integrally improved.
(2) The utility model discloses replaced traditional III-V clan gallium arsenide base battery and ordinary p type indium phosphide base battery that minority carrier life is short, its simple structure, simultaneously the utility model discloses utilize the high light absorption rate of indium phosphide, electron transport layer to the promotion of carrier transmission efficiency and the high light transmissivity and the high carrier migration rate of the transparent conducting layer of graphite alkene to and Al2O3The arrangement of the antireflection layer increases the light absorption rate of the cell, reduces the internal consumption of photo-generated carriers of the cell, and greatly improves the photoelectric conversion efficiency of the III-V family solar cell.
Drawings
Fig. 1 is a schematic structural diagram of an InP-graphene solar cell according to an embodiment of the present invention.
Fig. 2 is a diagram of a real object of an InP-graphene solar cell obtained in embodiment 1 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following examples and drawings, but the present invention is not limited thereto.
Example 1
A schematic structural diagram of the InP-graphene solar cell of this embodiment is shown in fig. 1. Comprises an Au back electrode, an InP epitaxial layer and TiO which are sequentially laminated from bottom to top2Hole blocking layer, graphene layer and Al2O3An anti-reflective layer; surrounding Al2O3The antireflection layer is provided with a circle of Ag contact electrodes, and the Ag contact electrodes are in contact with the graphene layer.
The InP-graphene solar cell is prepared by the following method:
(1) using low-doped p-type InP epitaxial wafer as base region material, (Zn-doped InP with thickness of 350 μm, crystal orientation of 100), Zn doping concentration of 2 × 1018/cm3The carrier mobility is 140cm2V · s). Sequentially carrying out ultrasonic cleaning on the substrate for 5 minutes by using acetone, ethanol and ultrapure water in AR grade, then rinsing for 3 minutes by using 6% hydrochloric acid, and then rinsing by using deionized water; and putting the cleaned substrate into an annealing furnace, setting the annealing temperature to 700 ℃, heating for 14 minutes, and then annealing for 24 minutes.
(2) And (3) evaporating a layer of gold as a back electrode layer on the back surface of the substrate treated in the step (1) by using an electron beam evaporation system at the speed of 1.5nm/s and the thickness of 150nm, and carrying out annealing treatment after the evaporation is finished.
(3) Plating a layer of titanium dioxide as a hole blocking layer on the front surface of the substrate plated with the back electrode by using an electron beam evaporation system, wherein the speed is 0.7nm/s, the rotation speed of the chassis is 3 seconds/circle, the temperature of the chassis is controlled at 32 ℃, and the thickness of the chassis is 12 nm;
(4) the method comprises the steps of repeatedly rinsing 'bubble-taking' type graphene by using PMMA (polymethyl methacrylate) sheets by using deionized water, transferring the graphene onto an InP substrate which is coated with a titanium dioxide layer by evaporation, wherein the thickness of the graphene is 5 layers of atoms, and then dissolving residual PMMA material by using an acetone solvent, wherein in order to prevent supercooling and cracking of the graphene in the PMMA removing process, the acetone is heated to 40-60 ℃ before use, and is dried at 120 ℃ to obtain the graphene layer.
(5) And (5) depositing a layer of aluminum oxide as an antireflection layer on the substrate obtained in the step (4) in an electron beam evaporation system, wherein the speed is 0.3nm/s, and the thickness is 28 nm.
(6) And (3) pasting an insulating adhesive around the graphene film on the upper layer of the substrate, injecting a circle of liquid silver around the aluminum oxide antireflection layer above the insulating adhesive, ensuring that the liquid silver is in contact with the graphene, and drying again at the drying temperature of 100 ℃ to obtain the InP-graphene solar cell.
Fig. 2 shows a physical diagram of the InP-graphene solar cell obtained in this example.
The embodiment provides a unijunction solar cell element with a vertical structure, incident light penetrates through an antireflection film with high light transmittance and a graphene layer, the light absorption rate of a solar cell is greatly improved, simultaneously, photo-generated electrons are generated in a Schottky structure formed by indium phosphide and graphene, the electrons pass through an indium phosphide-titanium dioxide-graphene structure, the recombination of the photo-generated electrons in the indium phosphide is effectively reduced, the service life of the photo-generated electrons is prolonged, the internal resistance of the cell element is greatly reduced, the external voltage and the short-circuit current of the solar cell are obviously improved, and the theoretical total photoelectric conversion efficiency of the unijunction solar cell is improved by 57-60% compared with that of a common indium phosphide pn junction cell. The titanium dioxide hole blocking layer in the indium phosphide graphene solar cell is proved to have effective effects on hole blocking, photo-generated electron mobility increasing and photo-generated electron service life, and the improvement of light absorption amount due to high light transmittance of graphene and the obvious influence on reduction of photo-generated current internal resistance and improvement of photovoltaic response efficiency due to the Schottky structure formed by the graphene and indium phosphide are also proved. Meanwhile, the solar cell is simple in structure, short in manufacturing period, easy to realize, and few in pollutants generated in the technical process, and the structure is a practical high-efficiency novel solar cell structure.
Example 2
A schematic structural diagram of the InP-graphene solar cell of this embodiment is shown in fig. 1. Comprises an Au back electrode, an InP epitaxial layer and TiO which are sequentially laminated from bottom to top2Hole blocking layer, graphene layer and Al2O3An anti-reflective layer; surrounding Al2O3The antireflection layer is provided with a circle of Ag contact electrodes, and the Ag contact electrodes are in contact with the graphene layer.
The InP-graphene solar cell is prepared by the following method:
(1) the low-doped p-type InP epitaxial wafer is used as a base region material (Zn-doped InP with the thickness of 350 μm, the crystal orientation of 100) and the doping concentration of 4 x 1018/cm3Carrier mobility of 120cm2V · s). Sequentially carrying out ultrasonic cleaning on the substrate for 5 minutes by using acetone, ethanol and ultrapure water in AR grade, then rinsing for 3 minutes by using 6% hydrochloric acid, and then rinsing by using deionized water; and (3) putting the cleaned substrate into an annealing furnace, setting the annealing temperature to be 1000 ℃, heating for 10 minutes, and then annealing for 20 minutes.
(2) And (3) evaporating a layer of gold as a back electrode layer on the back surface of the substrate treated in the step (1) by using an electron beam evaporation system at the speed of 1nm/s and the thickness of 100nm, and carrying out annealing treatment after the evaporation is finished.
(3) Plating a layer of titanium dioxide as a hole blocking layer on the front surface of the substrate plated with the back electrode by using an electron beam evaporation system, wherein the speed is 0.5nm/s, the rotation speed of the chassis is 5 seconds/circle, the temperature of the chassis is controlled at 32 ℃, and the thickness of the chassis is 12 nm;
(4) the method comprises the steps of repeatedly rinsing 'bubble-taking' type graphene by using PMMA (polymethyl methacrylate) sheets by using deionized water, transferring the graphene onto an InP substrate which is coated with a titanium dioxide layer by evaporation, wherein the thickness of the graphene is 5 layers of atoms, and then dissolving residual PMMA material by using an acetone solvent, wherein in order to prevent supercooling and cracking of the graphene in the PMMA removing process, the acetone is heated to 40-60 ℃ before use, and is dried at 110 ℃ to obtain the graphene layer.
(5) And (5) depositing a layer of aluminum oxide as an antireflection layer on the substrate obtained in the step (4) in an electron beam evaporation system, wherein the speed is 0.2nm/s, and the thickness is 25 nm.
(6) And (3) pasting an insulating adhesive around the graphene film on the upper layer of the substrate, injecting a circle of liquid silver around the aluminum oxide antireflection layer above the insulating adhesive, ensuring that the liquid silver is in contact with the graphene, and drying again at the drying temperature of 120 ℃ to obtain the InP-graphene solar cell.
The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be equivalent replacement modes, and all are included in the scope of the present invention.
Claims (2)
1. An InP-graphene solar cell, characterized in that: the InP-graphene solar cell comprises an Au back electrode, an InP epitaxial layer and TiO which are sequentially stacked from bottom to top2Hole blocking layer, graphene layer and Al2O3An anti-reflective layer; surrounding Al2O3The antireflection layer is provided with a circle of Ag contact electrodes, and the Ag contact electrodes are in contact with the graphene layer.
2. The InP-graphene solar cell according to claim 1, wherein: the thickness of the Au back electrode is 100-200 nm, the thickness of the InP epitaxial layer is 0.35-1.2 mm, and the thickness of the TiO layer is2The thickness of the hole blocking layer is 10-20 nm, the thickness of the graphene layer is 5-6 layers of atoms, and Al is2O3The thickness of the antireflection layer is 20-100 nm.
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| CN110571289A (en) * | 2019-09-23 | 2019-12-13 | 华南理工大学 | InP-graphene solar cell and preparation method thereof |
| CN110571289B (en) * | 2019-09-23 | 2024-05-10 | 华南理工大学 | InP-graphene solar cell and preparation method thereof |
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