JPS5977409A - Optical isolator - Google Patents
Optical isolatorInfo
- Publication number
- JPS5977409A JPS5977409A JP18743582A JP18743582A JPS5977409A JP S5977409 A JPS5977409 A JP S5977409A JP 18743582 A JP18743582 A JP 18743582A JP 18743582 A JP18743582 A JP 18743582A JP S5977409 A JPS5977409 A JP S5977409A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- substrate
- magnetic garnet
- optical isolator
- birefringence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
- G02F1/093—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect used as non-reciprocal devices, e.g. optical isolators, circulators
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は光アイソレータに係p%特にファラデー回転材
料用磁性ガーネット結晶の光学的特性を改善することに
よって得られる高性能光アイソレータに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to optical isolators, and in particular to high-performance optical isolators obtained by improving the optical properties of magnetic garnet crystals for Faraday rotation materials.
光アイソレータに用いられるファラデー回転材料として
は磁性ガーネットが、ファラデー効果が大きいため優れ
ている。この磁性ガーネット結晶を得る容易な方法とし
て液相成長法がある。しかし、一般に液相成長法におい
ては、基板となる結晶体の格子定数と、基板の上に成長
させる結晶膜の格子定数との間に差がおるため、膜が厚
くなると格子定数の不一致による力学的な歪から、光学
的な複屈折を生じる。この複屈折が、ファラデー回転に
おける特性を劣化させる。Magnetic garnet is an excellent Faraday rotation material used in optical isolators because it has a large Faraday effect. A liquid phase growth method is an easy method for obtaining this magnetic garnet crystal. However, in general, in the liquid phase growth method, there is a difference between the lattice constant of the crystalline material that serves as the substrate and the lattice constant of the crystalline film grown on the substrate. The optical distortion causes optical birefringence. This birefringence deteriorates the properties in Faraday rotation.
Biを磁性ガーネットに混入すると、ファラデー回転能
が一桁高くなる。G () G (Gd5GasOtz
)基板上にJ3iを含んだ磁性ガーネット結晶膜を形成
する場合に、基板結晶との格子定数が近くなるように多
種の元素を混入させる。形成された膜の組成は、例えば
B i O,63Tm 2,3 pe3,6Gal、2
Pbo、620+2、又はB i6.9s Yb2.+
Fea、s G a +、+ Pbo、o3012の
様になる。結晶膜厚は、夫々13μm、5.3μmであ
る。この時の格子定数差は、−o、oio人。When Bi is mixed into magnetic garnet, the Faraday rotation ability increases by an order of magnitude. G () G (Gd5GasOtz
) When forming a magnetic garnet crystal film containing J3i on a substrate, various elements are mixed so that the lattice constant becomes close to that of the substrate crystal. The composition of the formed film is, for example, B i O, 63Tm 2,3 pe3,6Gal, 2
Pbo, 620+2, or B i6.9s Yb2. +
Fea, s G a +, + Pbo, o3012. The crystal film thicknesses are 13 μm and 5.3 μm, respectively. The lattice constant difference at this time is -o, oio.
−0,044人 である。この2つの材料に直線偏光を
入射した場合の入射光の偏液面に直交する出射光の偏波
成分のパワーを示したのが第1図である。-0,044 people. FIG. 1 shows the power of the polarization component of the output light perpendicular to the polarization plane of the input light when linearly polarized light is incident on these two materials.
第1図に用いた試料では結晶中に複屈折が存在するため
、光の伝搬について直線偏光が楕円偏光となって、10
0%直交成分にパワーが移らないという欠点があった。In the sample used in Figure 1, birefringence exists in the crystal, so linearly polarized light becomes elliptically polarized light and 10
There was a drawback that power was not transferred to the 0% orthogonal component.
このため光アイソレータにこのような磁性ガーネット膜
を用いると高精度な特性が得られない。Therefore, if such a magnetic garnet film is used in an optical isolator, highly accurate characteristics cannot be obtained.
本発明の目的は、液相成長によフ製作されたファラデー
回転材料用磁性ガーネット結晶中に生じ易い複屈折を除
去しアイソレーション特性を改善した光アイソレータを
提供することにある。An object of the present invention is to provide an optical isolator with improved isolation characteristics by eliminating birefringence that tends to occur in magnetic garnet crystals for Faraday rotation materials manufactured by liquid phase growth.
上記目的を達成するだめの本発明の構成は、磁性ガーネ
ット単結晶を成長基板よシ無歪研削によシ離脱せしめる
ことにある。The structure of the present invention to achieve the above object is to detach a magnetic garnet single crystal from a growth substrate by strain-free grinding.
ファラデー回転材料用結晶M(磁性ガーネット)を基板
ガーネット上に形成する場合に、結晶膜と基板結晶の格
子定数の差から光学的複屈折を生じる。光学的複屈折は
、結晶膜と基板結晶の格子間隔の異なシによる力学的歪
に起因している。このため基板を無歪研削で除去するこ
とによシ複屈折の要因である力学的歪を取れば光学的に
良質な磁性ガーネット結晶を得ることができる。When a Faraday rotation material crystal M (magnetic garnet) is formed on a substrate garnet, optical birefringence occurs due to the difference in lattice constant between the crystal film and the substrate crystal. Optical birefringence is caused by mechanical strain due to the difference in lattice spacing between the crystal film and the substrate crystal. Therefore, if the mechanical strain that causes birefringence is removed by removing the substrate by strain-free grinding, a magnetic garnet crystal of optically good quality can be obtained.
以下、本発明の一実施例を第2図によ#)説明する。 An embodiment of the present invention will be described below with reference to FIG.
第2図には本発明の一実施例としての光アイソレータの
構成が示しである。偏光子(1−1,1−2)、セルフ
オフレンズ(2−1,2−2)とファラデー回転材料(
3−1,3−2)と印加磁界用磁石(5−1,5−2)
によシ構成される。FIG. 2 shows the configuration of an optical isolator as an embodiment of the present invention. Polarizer (1-1, 1-2), self-off lens (2-1, 2-2) and Faraday rotation material (
3-1, 3-2) and applied magnetic field magnet (5-1, 5-2)
It is composed of various parts.
上記ファラデー回転材料は、液相成長した磁性ガーネッ
ト(B i llLa5 Y bz、+ F ea、s
Ga+、+ Pbo、oac)+2)から無歪み研磨
によシ基板を除去した結晶で1、補強のため透明な基板
4に接着しである。The above Faraday rotation material is a liquid-phase grown magnetic garnet (B i llLa5 Y bz, + F ea, s
The crystal 1 is obtained by removing the substrate from Ga+, +Pbo, oac)+2) by strain-free polishing, and is bonded to a transparent substrate 4 for reinforcement.
光源からの光10は、偏光子1−1によシ直線偏光のみ
が伝わる。この直a偏光はセルフオフレンズで平行光線
とされてファラデー回転材料3−1に入射する。入射し
た直線偏光は、ファラデー回転材料3−1.3−2中で
偏波面が45度回転する。そして、セルフオフレンズ2
−2で絞られて後に45度傾けられた偏光子1−2を損
失なく透過する。尚、ファラデー回転材料の厚さは0.
5〜3μmであシ、印加磁界強度は、偏光面が45射す
る光μ、偏光子1−2によ−#)45度偏光面が一↓
傾いた直線偏光となる。ファフー回転材料3−2゜3−
1によシさらに45度回転して、偏光子1−2に対して
直角方向の直線偏光となる。このため逆方向から入射し
た光11は、偏光子1−2により遮閉され光源に達しな
い。このように、一方向結合素子光アイソレータが機能
する。Only linearly polarized light 10 from the light source is transmitted through the polarizer 1-1. This directly a-polarized light is converted into parallel light by a self-off lens and enters the Faraday rotation material 3-1. The plane of polarization of the incident linearly polarized light is rotated by 45 degrees in the Faraday rotation material 3-1.3-2. And Self Off Lens 2
The light passes through the polarizer 1-2, which is stopped by -2 and then tilted by 45 degrees, without any loss. Note that the thickness of the Faraday rotation material is 0.
If it is 5 to 3 μm, the intensity of the applied magnetic field is 45 degrees, and the applied magnetic field intensity is 45 degrees. Fafu rotating material 3-2゜3-
1, the light is further rotated by 45 degrees to become linearly polarized light perpendicular to the polarizer 1-2. Therefore, the light 11 incident from the opposite direction is blocked by the polarizer 1-2 and does not reach the light source. In this way, the unidirectional coupling element optical isolator functions.
ファラデー回転材料である磁性ガーネット結晶中に複屈
折が存在すると、前記第1図に示されたように、逆方向
からの入射光が直線偏光ではなく楕円偏光となるため遮
閉度が悪くなる。今回状々が無歪研削して得た磁性ガー
ネットでは非常に良い特性を示した。波長1.15μm
の光に対し、光源からの光の出力と逆方向からの光の出
力の比(消光比)30dBであった。If birefringence exists in the magnetic garnet crystal, which is a Faraday rotation material, as shown in FIG. 1, the incident light from the opposite direction becomes elliptically polarized light instead of linearly polarized light, resulting in a poor degree of shielding. In this case, the magnetic garnet obtained by strain-free grinding showed very good characteristics. Wavelength 1.15μm
The ratio of the light output from the light source to the light output from the opposite direction (extinction ratio) was 30 dB.
本発明によれば、液相成長によシ製作されたファラデー
回転材料用磁性ガーネット結晶中に生じ易い複屈折を、
基板結晶を無歪み研削除去することによシ取り除いて、
それをファラデー回転素子として用いたため光アイソレ
ータ特性が大幅に向上した。複屈折が起きないためファ
ラデー効果で偏波面が回転するとき、100%の直線偏
光の維持がなされた。このことによシ、光アイソレータ
において逆方向からの入射光の光源への帰還が充分に防
止でき30dBの消化を得ることが可能となった。According to the present invention, birefringence that tends to occur in magnetic garnet crystals for Faraday rotation materials manufactured by liquid phase growth can be reduced.
The substrate crystal is removed by strain-free grinding,
By using it as a Faraday rotation element, the optical isolator characteristics were significantly improved. Since birefringence does not occur, 100% linear polarization was maintained when the plane of polarization was rotated by the Faraday effect. As a result, the optical isolator can sufficiently prevent the incident light from the opposite direction from returning to the light source, making it possible to obtain an extinction of 30 dB.
【図面の簡単な説明】
第1図は、結晶に直線偏光を入射した場合の入射光の偏
波面に直交する出射光の成分パワーを入射光パワーに対
する比で表わした実測値、第2図は、本発明の一実施例
としての光アイソレータの構成図である。
1−1.1−2・・・偏光子、2−1.2−2・・・セ
ルフオフレンズ、3−1.3−2・・・ファラデー回転
材料(磁性ガーネット)、4・・・補強基板、5−1゜
5−2・・・外部磁場印加用磁石、10−1.10−2
・・・光源からの光、11・・・逆方向から光源に入射
する光。
代理人 弁理士 薄田利幸
T 1 図
第 2 図
51[Brief explanation of the drawings] Figure 1 shows actual measured values of the component power of the output light perpendicular to the polarization plane of the incident light when linearly polarized light is incident on the crystal, expressed as a ratio to the input light power. FIG. 1 is a configuration diagram of an optical isolator as an embodiment of the present invention. 1-1.1-2...Polarizer, 2-1.2-2...Self-off lens, 3-1.3-2...Faraday rotation material (magnetic garnet), 4...Reinforcement Substrate, 5-1゜5-2... Magnet for applying external magnetic field, 10-1.10-2
...Light from the light source, 11...Light entering the light source from the opposite direction. Agent Patent Attorney Toshiyuki Usuda T 1 Figure 2 Figure 51
Claims (1)
前後に45度光学軸が相対した偏光子、および検光子を
配置して構成した光アイソレータにおいて、上記磁性ガ
ーネット単結晶は成長基板よシ無歪研削によシ離脱せし
めてなる構造をもつ光アイソレータ。In an optical isolator constructed by using a magnetic garnet single crystal as a Faraday rotation element, and arranging a polarizer and an analyzer whose optical axes are opposed to each other at 45 degrees before and after the magnetic garnet single crystal, the magnetic garnet single crystal can be grinded without distortion from the growth substrate. An optical isolator with a structure that allows for easy separation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18743582A JPS5977409A (en) | 1982-10-27 | 1982-10-27 | Optical isolator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18743582A JPS5977409A (en) | 1982-10-27 | 1982-10-27 | Optical isolator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5977409A true JPS5977409A (en) | 1984-05-02 |
Family
ID=16206005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18743582A Pending JPS5977409A (en) | 1982-10-27 | 1982-10-27 | Optical isolator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5977409A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62194222A (en) * | 1986-02-20 | 1987-08-26 | Sumitomo Metal Mining Co Ltd | Magnetooptic element material |
JPS62195619A (en) * | 1986-02-12 | 1987-08-28 | Sony Corp | Optical isolator |
JPS635320A (en) * | 1986-06-25 | 1988-01-11 | Hoya Corp | Faraday rotator and optical isolator |
-
1982
- 1982-10-27 JP JP18743582A patent/JPS5977409A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62195619A (en) * | 1986-02-12 | 1987-08-28 | Sony Corp | Optical isolator |
JPS62194222A (en) * | 1986-02-20 | 1987-08-26 | Sumitomo Metal Mining Co Ltd | Magnetooptic element material |
JPS635320A (en) * | 1986-06-25 | 1988-01-11 | Hoya Corp | Faraday rotator and optical isolator |
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