JPS5977245U - semiconductor radiation detector - Google Patents

semiconductor radiation detector

Info

Publication number
JPS5977245U
JPS5977245U JP17206782U JP17206782U JPS5977245U JP S5977245 U JPS5977245 U JP S5977245U JP 17206782 U JP17206782 U JP 17206782U JP 17206782 U JP17206782 U JP 17206782U JP S5977245 U JPS5977245 U JP S5977245U
Authority
JP
Japan
Prior art keywords
package
radiation detector
semiconductor radiation
utility
model registration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17206782U
Other languages
Japanese (ja)
Inventor
月野 和雄
武智 俊明
Original Assignee
富士電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士電機株式会社 filed Critical 富士電機株式会社
Priority to JP17206782U priority Critical patent/JPS5977245U/en
Publication of JPS5977245U publication Critical patent/JPS5977245U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の概略構成図を示し、Aはそ
の平面図、Bはその側面断面図、第2図は本考案による
半導体放射線検出器の回路図、第3図は本考案の他の実
施例の概略構成図を示し、Aはその平面図、Bはその側
面断面図、第4図および第5図は本考案のさらに他の実
施例の概略構成図を示し、Aはその平面図、Bはその側
面断面図である。 1、 14. 20. 22:シリコンγ線検出器、2
.15:増幅回路部、3:シリコンγ線検出素子、4:
初段回路部、7.17:パッケージ用キャン、21:エ
ポキシ樹脂材、23:鉛板フィルタ。 14          1.5 (A)
FIG. 1 shows a schematic configuration diagram of an embodiment of the present invention, A is a plan view thereof, B is a side sectional view thereof, FIG. 2 is a circuit diagram of a semiconductor radiation detector according to the present invention, and FIG. 3 is a diagram of the present invention. 4 and 5 show schematic configuration diagrams of other embodiments of the invention, A is a plan view thereof, B is a side sectional view thereof, FIGS. 4 and 5 are schematic diagrams of still other embodiments of the invention; B is a plan view thereof, and B is a side sectional view thereof. 1, 14. 20. 22: Silicon gamma ray detector, 2
.. 15: Amplification circuit section, 3: Silicon gamma ray detection element, 4:
First stage circuit section, 7.17: Package can, 21: Epoxy resin material, 23: Lead plate filter. 14 1.5 (A)

Claims (4)

【実用新案登録請求の範囲】[Scope of utility model registration request] (1)シリコンγ線検出素子上このシリコンγ線検出素
子に接続された前置増幅回路の初段回路部とを集積回路
化し、不活性ガスと共にキャンバ、  ツケージ化した
キャンパッケージ部と、前記初段回路部以後の回路部を
通常の樹脂モールド化した樹脂モールド部とからなるこ
とを特徴とする半導体放射線検出器。
(1) A silicon gamma ray detection element and a first stage circuit part of a preamplifier circuit connected to this silicon gamma ray detection element are integrated into an integrated circuit, and a can package part made of camber and cage together with an inert gas, and the first stage circuit. What is claimed is: 1. A semiconductor radiation detector comprising: a resin molded portion in which a circuit portion subsequent to the portion is molded with a normal resin.
(2)実用新案登録請求の範囲第1項に記載の検出器に
おいて、キャンパッケージ部は、樹脂モールド部と完全
に一体化されてなることを特徴とする半導体放射線検出
器。
(2) Utility Model Registration The semiconductor radiation detector according to claim 1, wherein the can package part is completely integrated with the resin mold part.
(3)  実用新案登録請求の範囲第1項に記載の検出
器において、キャンパッケージ部は、パッケージ用キャ
ンにγ線の吸収がほとんどない衝撃振動防止部材を密着
接着したことを特徴とする半導体放射線検出器。
(3) In the detector according to claim 1 of the utility model registration claim, the can package portion is a semiconductor radiation detector characterized in that an impact vibration prevention member that hardly absorbs gamma rays is closely adhered to the package can. Detector.
(4)実用新案登録請求の範囲第1項に記載の検出器に
おいて、キャンパッケージ部は、パッケージ用キャシに
衝撃振動防止機能と共に、入射γ線エネルギ補正機能を
有するエネルギ補正フィルタを密着接着したことを特徴
とする半導体放射線検出器。
(4) Utility Model Registration Scope of Claims In the detector described in claim 1, the can package portion has an energy correction filter having an impact vibration prevention function and an incident gamma ray energy correction function closely adhered to the package case. A semiconductor radiation detector characterized by:
JP17206782U 1982-11-13 1982-11-13 semiconductor radiation detector Pending JPS5977245U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17206782U JPS5977245U (en) 1982-11-13 1982-11-13 semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17206782U JPS5977245U (en) 1982-11-13 1982-11-13 semiconductor radiation detector

Publications (1)

Publication Number Publication Date
JPS5977245U true JPS5977245U (en) 1984-05-25

Family

ID=30375176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17206782U Pending JPS5977245U (en) 1982-11-13 1982-11-13 semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS5977245U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61281559A (en) * 1985-06-07 1986-12-11 Nippon Kogaku Kk <Nikon> Photodetector

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134487A (en) * 1974-04-10 1975-10-24
JPS52137278A (en) * 1976-05-12 1977-11-16 Toshiba Corp Semiconductor radiation detector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134487A (en) * 1974-04-10 1975-10-24
JPS52137278A (en) * 1976-05-12 1977-11-16 Toshiba Corp Semiconductor radiation detector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61281559A (en) * 1985-06-07 1986-12-11 Nippon Kogaku Kk <Nikon> Photodetector

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