JPS5975662A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS5975662A JPS5975662A JP18562482A JP18562482A JPS5975662A JP S5975662 A JPS5975662 A JP S5975662A JP 18562482 A JP18562482 A JP 18562482A JP 18562482 A JP18562482 A JP 18562482A JP S5975662 A JPS5975662 A JP S5975662A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- thyristor
- junction
- vicinity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052737 gold Inorganic materials 0.000 claims abstract description 4
- 239000010931 gold Substances 0.000 claims abstract description 4
- 238000005468 ion implantation Methods 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 3
- 239000002184 metal Substances 0.000 claims abstract description 3
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 2
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003321 amplification Effects 0.000 abstract description 2
- 239000007864 aqueous solution Substances 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 239000010949 copper Substances 0.000 abstract description 2
- 229910052733 gallium Inorganic materials 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
Description
【発明の詳細な説明】
この発明はＰ Ｌ −Ｎ １−Ｐ ２−Ｎ ２４層構造
を持つサイリスクのゲート特性の改善に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvement of the gate characteristics of a silice having a P L -N 1 -P 2 -N 24 layer structure.
従来Ｊ’１−Ｎ）−Ｐ２−Ｎ２構造を持つサイリスクに
おいては）’ ＩＦ５層の形成の為、にＮ１型基板の両
面よりポロンガリウム等の不純物を拡散した後さらにリ
ン等を用いて１２層上にＮ２層を拡散してＰｌ−Ｎｌ−
Ｐ２−Ｎ２構造を形成する。Ｎ２層よシ注入されＰ２層
を横切る少数キャリアであるエレクトロンの寿命は拡散
技術の向上とを共に重金属汚染によるライフタイムの減
少がなくなシ、基板及び拡散層のライフタイムに近ずく
。この為にＮ２−Ｐ２−Ｎｌ よシなるトランジスタ
は基板の再結合の影響がなく、又表面においてもフレー
ナ接合となっている為に影響が少ないので電流増［１］
率の電流依存性は非常に少く、低札、流領域に於ても低
下しない。この４１はサイリスクとしてみた場合には非
常に高感用となり一般的には望ましいが、特殊な用途殊
にノイズによる誤点弧のおそれのある回路には不向きで
、ゲート感度（ＩＵＴ）を上げることがしばしば要求さ
れている。Conventionally, in SIRISK with J'1-N)-P2-N2 structure, to form 5 layers of IF, impurities such as poron gallium are diffused from both sides of the N1 type substrate, and then 12 layers are formed using phosphorus, etc. Diffuse N2 layer on top to form Pl-Nl-
Forms a P2-N2 structure. The lifetime of electrons, which are minority carriers injected through the N2 layer and crossing the P2 layer, will approach the lifetime of the substrate and the diffusion layer as diffusion technology improves and the lifetime is no longer shortened due to heavy metal contamination. For this reason, N2-P2-Nl transistors are not affected by recombination of the substrate, and since the surface is also a flaner junction, the effect is small, so the current increases [1]
The current dependence of the rate is very small and does not decrease even in the low charge and current range. This 41 is very sensitive in terms of silicon risk and is generally desirable, but it is not suitable for special applications, especially circuits where there is a risk of false firing due to noise, and it is necessary to increase the gate sensitivity (IUT). is often required.
本発明はこの様な要求に対応する仁とを目的としている
。The present invention is aimed at meeting such demands.
本発明はゲート感度をコントロールしながら低下させる
ことを目的としている。Ｐｌ−Ｎｌ−Ｐ２−Ｎ２サイリ
スクはＰＩ−Ｎｌ−Ｐ２トランジスタとＮ１−Ｐ２−Ｎ
２）ランリスクのベース共通の回路として一般的には説
明される。この為にゲート感度を低下させる為にはＰｌ
−Ｎｌ−Ｐ２ ）ランリスク又はＮ１＝Ｐ２７Ｎ２ ＋
−ランジスタの電流増巾率の電流特性を、低電流レベル
領域で低下させｉｔば良い。The present invention aims to reduce gate sensitivity while controlling it. Pl-Nl-P2-N2 transistor is PI-Nl-P2 transistor and N1-P2-N
2) It is generally explained as a common circuit based on run risk. Therefore, in order to reduce the gate sensitivity, Pl
-Nl-P2) Run risk or N1=P27N2 +
- It is sufficient to reduce the current characteristic of the current amplification rate of the transistor in a low current level region.
すなわちゲート［極とカソード電極の設けられる間のＰ
２−Ｎ２接合近傍にイオンインプランテーション法によ
シ金、白金、銅尋の深い準位を持った金属を打ち込むこ
とによシ表面再結合速度が上昇し、Ｐｔ−Ｎ１−Ｐ２）
ランジ、スタの電流増「１〕率の低η１流特性を低下さ
せることができ、ゲート感度を低下させることができる
。That is, the gate [P between the electrode and the cathode electrode]
By implanting metals with deep levels, such as gold, platinum, and copper, near the 2-N2 junction using the ion implantation method, the surface recombination rate increases, and the Pt-N1-P2)
It is possible to reduce the low η1 current characteristics of the lunge and star current increase rate, and the gate sensitivity can be reduced.
次に本発明の一実施例を図面を、用いながら説明する。Next, one embodiment of the present invention will be described with reference to the drawings.
まず基板の比抵抗３０〜４０Ω鑞のＮ型基板１を化学的
に研磨して厚さ２５０μｍ程度とする０次にシリコン基
板１０両面よシガリウムを用いて拡散しＰｌ、ｐ２層を
設ける、ウェハーを高温で酸化し、シリコン酸化膜を設
け、公知の光学的方法によりカソード領域となる部分の
みをとシ去った同様にフォトレジストを用いて選択的に
Ｐ２−Ｎ２接合近傍８に金を含む水溶液を蒸気化したガ
スを用いてイオンインプランテーションを行い、シンタ
ーを行う。この様な工程を用いてケート感度を１μＡ〜
１ｍＡ程度にコントロールすることができた０First, an N-type substrate 1 with a specific resistance of 30 to 40 Ω is chemically polished to a thickness of about 250 μm.Next, cigallium is used to diffuse the silicon substrate 10 on both sides to form Pl and p2 layers. A silicon oxide film was formed by oxidation at high temperature, and only the portion that would become the cathode region was removed using a known optical method. Similarly, a photoresist was used to selectively apply an aqueous solution containing gold to the vicinity of the P2-N2 junction 8. Perform ion implantation using vaporized gas and perform sintering. Using this process, the cell sensitivity can be increased to 1 μA or more.
I was able to control it to around 1mA.
第１図は本発明のサイリスタの断面を示している。
尚、図において、１ シリコン基板、２ ・・Ｐ型ゲ
ート領域、計・・・・・２重アノード領域、４・・・・
・・カソード領域、５・・・・・アノード電極、６・・
・ カソード電極、７ ・・ゲート電極、８・・・
・イオンイングランチージョン領域、である。FIG. 1 shows a cross section of a thyristor according to the invention. In the figure, 1: silicon substrate, 2: P-type gate region, total: double anode region, 4:
...Cathode region, 5...Anode electrode, 6...
・Cathode electrode, 7...Gate electrode, 8...
-Ion-injection region.
Claims (1)
し、さらにその片面より一導電型不純物を拡散してなる
Ｐ １−Ｎ ］ −Ｐ ２−Ｎ ２構造を有するツイリ
スタにおいて、グー）［極とカソード■極の設けられる
間のＰ２−Ｎ２接合近傍にイオンインプランテーション
法により金、白金９例等の深い準位を持った金属を打ち
込んだことを特徴とするサイリスク。In a Twiristor having a P 1-N ] -P 2-N 2 structure in which an impurity of an opposite conductivity type is diffused from one side of a semiconductor substrate of one conductivity type, and an impurity of one conductivity type is further diffused from one side of the semiconductor substrate, ) [Sirisk characterized by implanting a metal with a deep level such as gold or platinum by ion implantation method into the vicinity of the P2-N2 junction between the pole and the cathode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18562482A JPS5975662A (en) | 1982-10-22 | 1982-10-22 | Thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18562482A JPS5975662A (en) | 1982-10-22 | 1982-10-22 | Thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5975662A true JPS5975662A (en) | 1984-04-28 |
Family
ID=16174042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18562482A Pending JPS5975662A (en) | 1982-10-22 | 1982-10-22 | Thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5975662A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0488440A2 (en) * | 1990-11-29 | 1992-06-03 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Process of introduction and diffusion of platinum ions in a slice of silicon |
| US6093955A (en) * | 1994-08-05 | 2000-07-25 | Garnham; David A. | Power semiconductor device |
| CN111307913A (en) * | 2020-03-29 | 2020-06-19 | 复旦大学 | Semiconductor ion sensor without reference electrode and preparation method thereof |
-
1982
- 1982-10-22 JP JP18562482A patent/JPS5975662A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0488440A2 (en) * | 1990-11-29 | 1992-06-03 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Process of introduction and diffusion of platinum ions in a slice of silicon |
| US5227315A (en) * | 1990-11-29 | 1993-07-13 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Process of introduction and diffusion of platinum ions in a slice of silicon |
| US6093955A (en) * | 1994-08-05 | 2000-07-25 | Garnham; David A. | Power semiconductor device |
| CN111307913A (en) * | 2020-03-29 | 2020-06-19 | 复旦大学 | Semiconductor ion sensor without reference electrode and preparation method thereof |
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