JPS5968979A - Manufacture of photoelectric conversion element film - Google Patents
Manufacture of photoelectric conversion element filmInfo
- Publication number
- JPS5968979A JPS5968979A JP57180207A JP18020782A JPS5968979A JP S5968979 A JPS5968979 A JP S5968979A JP 57180207 A JP57180207 A JP 57180207A JP 18020782 A JP18020782 A JP 18020782A JP S5968979 A JPS5968979 A JP S5968979A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- photoelectric conversion
- conversion element
- band width
- forbidden band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 abstract description 12
- 239000002994 raw material Substances 0.000 abstract description 2
- 238000004804 winding Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は薄膜ゲルマニウムや薄膜シリコン等の光電変換
素子膜の製造法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a photoelectric conversion element film such as a thin germanium film or a thin silicon film.
従来例の構成とその問題点
従来、真空中で基板を連続的て移動させ、薄膜シリコン
を堆積させる製法については、種々知られている。この
場合、薄膜の光学的禁止帯幅を調節するに際し、基板温
度を変えねばならなかったので工程が複雑であった。Conventional Structures and Problems There are various known manufacturing methods in which a thin film of silicon is deposited by continuously moving a substrate in a vacuum. In this case, the process was complicated because the substrate temperature had to be changed when adjusting the optical bandgap width of the thin film.
発明の目的
光電変換素子の光学的禁止帯幅を簡易に調整できる製造
法を得ることを目的とする。OBJECTS OF THE INVENTION It is an object of the invention to provide a manufacturing method that allows easy adjustment of the optical forbidden width of a photoelectric conversion element.
発明の構成
光電変換膜を形成する際に基板を連続的に移動させ、か
つ基板温度を基板の進行方向に漸次、温の要部断面図を
示す一実施例である。真空容器１内疋ヒータ線２の巻数
密度が異なるように配置され、この配置により基板３の
温度を連続的に変化させることが可能である。基板は矢
印の方向すなわち温度の高い方から低い方へ移動する。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an embodiment showing a cross-sectional view of a main part of the structure of the invention, in which a substrate is continuously moved during formation of a photoelectric conversion film, and the temperature of the substrate is gradually increased in the direction of movement of the substrate. The heater wires 2 in the vacuum vessel 1 are arranged so that the number of turns density is different, and this arrangement allows the temperature of the substrate 3 to be changed continuously. The substrate moves in the direction of the arrow, ie from the higher temperature side to the lower temperature side.
そして基板３は歯車６の回転によってチェーンベルト６
上に載せて連続的に移動させることが可能である。Then, the base plate 3 is rotated by the chain belt 6 by the rotation of the gear 6.
It can be placed on top and moved continuously.
そして基板３を移動させながら薄膜シリコンは次のよう
な方法で堆積させる。原料ガスを真空容器（以下反応炉
と記載する）中にガス導入ロアから導入する。ガスの種
類はＳ ｉ層４． Ｓ ｉ Ｆ ４． Ｇ ｅ Ｈ４゜
Ｂ２． Ａｒ 、 ＣＨ４，ＰＨ３，Ｂ２Ｈ６等の混合
物であって第１図において下部電極４と上部電極である
基板３捷たは基板ホールダ（図示しない）間にＤＣ電圧
脣たは高周波電圧またはこれらの重畳電圧を電源８から
印加するという通常のプラズマＣＶＤ法により基板上に
堆積させる。Then, while moving the substrate 3, thin film silicon is deposited by the following method. Raw material gas is introduced into a vacuum container (hereinafter referred to as a reactor) from a gas introduction lower. Type of gas is Si layer 4. S i F 4. G e H4゜B2. A mixture of Ar, CH4, PH3, B2H6, etc., and a DC voltage, a high frequency voltage, or a superimposed voltage thereof is applied between the lower electrode 4 and the upper electrode in FIG. The film is deposited on the substrate by a normal plasma CVD method in which a voltage is applied from a power source 8.
第２図に基板上に堆積した薄膜シリコンの断面図を示す
。透明電極１０を形成した透明絶縁性基板９上に上記堆
積法だより薄膜シリコン１１の９層１１．１層１２、ｎ
層１３を順次堆積し、そしてさらにアルミニウム、チタ
ン、ニンケル等の金属電極１４を形成している。使用す
る基板は透明な絶縁性基板９以外にもステンレスやアル
ミニウム等も使用可能である。FIG. 2 shows a cross-sectional view of a thin film of silicon deposited on a substrate. On the transparent insulating substrate 9 on which the transparent electrode 10 is formed, 9 layers 11.1 layers 12, n of thin film silicon 11 are deposited by the above deposition method.
Layers 13 are deposited in sequence, and metal electrodes 14 of aluminum, titanium, nickel, etc. are formed. In addition to the transparent insulating substrate 9, stainless steel, aluminum, etc. can also be used as the substrate.
光電変換は、光１５を透明絶縁性基板９側から照射して
、主に１層１２で行われ、外部に電気出力を取り出す。Photoelectric conversion is performed mainly in one layer 12 by irradiating light 15 from the transparent insulating substrate 9 side, and electrical output is taken out to the outside.
一般に光学的禁止帯幅が定まれば、最も吸収し易い光の
波長も定まり、ある膜の光学的禁止帯幅がブロードであ
れば吸収効率も向上する。したがって光電変換膜形成に
あたって、任意の光学的禁止帯幅を容易に得ることが重
要な問題となる。Generally, when the optical bandgap is determined, the wavelength of light that is most easily absorbed is also determined, and if the optical bandgap of a certain film is broad, the absorption efficiency will be improved. Therefore, in forming a photoelectric conversion film, it is an important issue to easily obtain an arbitrary optical band gap.
第３図は反応炉１中でプラズマＣＶＤにより薄膜シリコ
ンを堆積する際だ基板温度をＴ５（高温側）から順次Ｔ
。（低温側）−１：で変化させることが可能なことを示
している。堆積した薄膜シリコンは基板温度が高温の場
合は薄膜シリコンの含有水素量が多いので光学的禁止帯
幅を小（Ｂ２）から大（Ｂ１）−１：で任意の値を得る
ことが可能である。Figure 3 shows the distinct substrate temperatures at which thin film silicon is deposited by plasma CVD in reactor 1, starting from T5 (high temperature side).
. (Low temperature side) -1: It shows that it is possible to change. When the substrate temperature is high, the deposited thin film silicon contains a large amount of hydrogen, so it is possible to obtain an optical band gap of any value from small (B2) to large (B1) - 1: .
Ｔ５側から基板を進入させて順次移動させながらたとえ
ばｉ層を形成するとある領域をもった光学的禁止帯幅の
層を形成でき、太陽電池を形成したとき光吸収率を向上
できる。If, for example, an i-layer is formed by entering the substrate from the T5 side and moving it sequentially, a layer with a certain region and an optical forbidden width can be formed, and the light absorption rate can be improved when a solar cell is formed.
発明の効果
薄膜の光学的禁止帯幅を任意に変化させることができ、
簡単に光学的禁止帯幅を持つ光電変換素子層を形成でき
、この薄膜シリコンを使った太陽電池は太陽光スペクト
ルをよく吸収し光電変換効率を向上させることができる
。Effects of the invention The optical bandgap width of the thin film can be changed arbitrarily,
A photoelectric conversion element layer with an optical band gap can be easily formed, and solar cells using this thin film silicon can absorb sunlight spectrum well and improve photoelectric conversion efficiency.
第１図は本発明の一実施例の製造法におけるプラズマｃ
ｖｎ装置の構成図、第２図は太陽電池の構造を示す図、
第３図は基板温度と光学的禁止帯幅の関係を示す図であ
る。
１・・・・・・真空容器、２・・・・・・ヒータ、３・
・・・・・基板、４・・・・・・下部電極。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第
１ 図
第２図
７
第 ３ ＦＭ
基以渇屋’ｃ（什たＢ俗）FIG. 1 shows plasma c in a manufacturing method according to an embodiment of the present invention.
The configuration diagram of the vn device, Figure 2 is a diagram showing the structure of the solar cell,
FIG. 3 is a diagram showing the relationship between substrate temperature and optical bandgap width. 1... Vacuum container, 2... Heater, 3.
. . . Substrate, 4 . . . Lower electrode. Name of agent: Patent attorney Toshio Nakao and 1 other person
1 Figure 2 Figure 7 3rd FM Motoiya'c (Kita B Zoku)
Claims (1)
記移動方向に温度勾配を持たせる機能を有する真空容器
中を前記基板を高温側から低温側へ移動さぜながら光電
変換膜を堆積させる光電変換素子膜の製造法。 第１項記載の光電変換素子膜の製造法。 （３）プラズマＣＶＤ法によりｐ−１−ｎ型構造を有す
る薄膜シリコン光電変換素子を形成させる特許請求の範
囲第２項記載の光電変換素子膜の製造法０[Scope of Claims] (1) The substrate is moved from a high temperature side to a low temperature side in a vacuum container that has a function of continuously moving the substrate and a function of making the substrate temperature have a temperature gradient in the movement direction. A method for manufacturing a photoelectric conversion element film in which a photoelectric conversion film is deposited. 2. A method for producing a photoelectric conversion element film according to item 1. (3) Method 0 for producing a photoelectric conversion element film according to claim 2, in which a thin film silicon photoelectric conversion element having a p-1-n type structure is formed by a plasma CVD method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57180207A JPS5968979A (en) | 1982-10-13 | 1982-10-13 | Manufacture of photoelectric conversion element film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57180207A JPS5968979A (en) | 1982-10-13 | 1982-10-13 | Manufacture of photoelectric conversion element film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5968979A true JPS5968979A (en) | 1984-04-19 |
Family
ID=16079268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57180207A Pending JPS5968979A (en) | 1982-10-13 | 1982-10-13 | Manufacture of photoelectric conversion element film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5968979A (en) |
-
1982
- 1982-10-13 JP JP57180207A patent/JPS5968979A/en active Pending
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