JPS5967642A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5967642A
JPS5967642A JP57177659A JP17765982A JPS5967642A JP S5967642 A JPS5967642 A JP S5967642A JP 57177659 A JP57177659 A JP 57177659A JP 17765982 A JP17765982 A JP 17765982A JP S5967642 A JPS5967642 A JP S5967642A
Authority
JP
Japan
Prior art keywords
wire
corrosion resistance
content
aluminum
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57177659A
Other languages
Japanese (ja)
Inventor
Hiromichi Suzuki
博通 鈴木
Hiroshi Mikino
三木野　博
Wahei Kitamura
北村　和平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57177659A priority Critical patent/JPS5967642A/en
Publication of JPS5967642A publication Critical patent/JPS5967642A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To improve the corrosion resistance of an aluminum group wire while maintaining the low cost property of the wire, and to prevent disconnection due to corrosion by using the wire consisting of aluminum, silicon and copper. CONSTITUTION:The wire 6 contains 1-10% Si and 1-10% Cu besides Al. The range of the content of Si is selected because Si itself is hard, the flexibility of the wire lowers when the content exceeds 10%, and an effect of improving the corrosion resistance of the wire by the mixing of Si is not displayed sufficiently when it is less than 1%. On the other hand, the range of the content of Cu is limited because the corrosion resistance of the wire is not improved sufficiently when the content is less than 1%, and the elongation of the wire lowers and corrosion resistance and stress-resisting property deteriorate when it exceeds 10%. According to the composition, the corrosion resistance of the wire is improved largely, and the disconnection of the wire can be prevented.

Description

【発明の詳細な説明】 本発明は半導体装置、特に、ワイヤの耐食性の良好な半
導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and more particularly to a semiconductor device with good wire corrosion resistance.

従来、半導体装置のベレットのポンディングパッドと外
部リードへの配線部とを接続するためのワイヤとしては
金（Ａｕ）が使用されて来た。Conventionally, gold (Au) has been used as a wire for connecting a bonding pad of a bullet of a semiconductor device and a wiring portion to an external lead.

しかしながら、金の価格高騰により、コストが著しく上
昇するという問題がある。However, there is a problem in that the cost increases significantly due to the soaring price of gold.

そこで、金の代りに、より低コストのアルミニウム（Ａ
ｎをワイヤ材料として用いることが提案されている。Therefore, instead of gold, aluminum (A
It has been proposed to use n as wire material.

どころか、アルミニウムワイヤの場合、コストが低い反
面、耐食性が悪（、腐食による断線を生じるおそれがあ
るという問題を伴なう。特に、プラスチックパッケージ
よりなる半導体装置においては、リードフレームとレジ
ンとの界面等から浸入した湿気によってアルミニウムワ
イヤが腐食を起こし易いとい５問題があろう 本発明の目的は、前記した問題点な解決し、耐食性の良
好なワイヤを有する？ｒ導体装置を提供することにある
。On the contrary, in the case of aluminum wire, although it is low in cost, it has poor corrosion resistance (and there is a risk of wire breakage due to corrosion).In particular, in semiconductor devices made of plastic packages, the interface between the lead frame and the resin The purpose of the present invention is to solve the above-mentioned problems and provide a conductor device having wires with good corrosion resistance. .

以下１本発明な図面に示す一実肯例にしたがって詳細に
説明する。Hereinafter, the present invention will be explained in detail according to a practical example shown in the drawings.

図は本発明による半導体装置の一実施例を示す断面図で
ある。The figure is a sectional view showing an embodiment of a semiconductor device according to the present invention.

この実Ｋｌｉ例においで、たとえば４２７０イまたはコ
パール等で作られたリードフレーム１のタブ２の上には
、シリコン（Ｓｉ）、１：りなるベレット３が金（Ａｕ
）−シリコン（Ｓｉ）共晶構造４により取り付けられて
いる。In this actual Kli example, on top of the tab 2 of the lead frame 1 made of, for example, 4270 or copper, a pellet 3 made of silicon (Si) is made of gold (Au).
) - attached by a silicon (Si) eutectic structure 4.

前記ペレット３のポンディングパッドとυ〜ドフレーム
１のインナーリード部５（リード配線部）とは、ワイヤ
６によりポールボンディング方式でボンディングされ、
互いに電気的に接続されている。リードフレームｌのイ
ンナーリード部５は外部端子であるアウターリード部７
に電気的に導通している。The bonding pad of the pellet 3 and the inner lead part 5 (lead wiring part) of the υ~de frame 1 are bonded by a pole bonding method with a wire 6,
electrically connected to each other. The inner lead portion 5 of the lead frame l has an outer lead portion 7 which is an external terminal.
electrically conductive.

また、前記ペレット３．ワイヤ６、リードフレーム１の
タブ２およびインナーリード部５等はモールド用のレジ
ン８でトランスファモールドすることにより封止されて
いる。In addition, the pellet 3. The wire 6, the tab 2 of the lead frame 1, the inner lead portion 5, etc. are sealed by transfer molding with a molding resin 8.

本実昨例において、前記ワイヤ６はアルミニウム系であ
るが、耐食性な向上さぜるため、アルミニウムのみでは
なく、アルミニウム合金ワイヤとして構成されている。In this example, the wire 6 is made of aluminum, but in order to improve corrosion resistance, it is made of not only aluminum but also an aluminum alloy wire.

すなわち、ワイヤ６はアルミニウノ・の他に、シリコ／
（８ｉ）を１〜１０％、また銅（Ｃｕ　）を１〜１０％
含有しているうこのような組成によれば、ワイヤ６の耐
食性は大巾に向上し、ワイヤ断線を未然に防止できる他
、金（Ａｕ　）ワイヤに比べてはるかに低いコストで済
むという重大な利点が得られる。In other words, the wire 6 is made of aluminum Uno, as well as silicon/Uno.
(8i) from 1 to 10%, and copper (Cu) from 1 to 10%
Due to the composition contained in the wire, the corrosion resistance of the wire 6 is greatly improved and wire breakage can be prevented, and the cost is much lower than that of gold (Au) wire. Benefits can be obtained.

シリコンの含有率を１〜１０％の範囲内に選択した理由
は、シリコン自体が硬質で、１０％を超えるとワイヤ６
の柔軟性が低下し、ポールボンディング時のワイヤ６が
折れ易（なることを考慮し。The reason why we selected the silicon content within the range of 1 to 10% is that silicon itself is hard, and if it exceeds 10%, the wire 6
The flexibility of the wire 6 decreases, making the wire 6 more likely to break during pole bonding.

また１％未満では、シリコンの混入によるワイヤ６の耐
食性向」二効果が十分に発揮されないからであるう 一方、銅（Ｃｕ　）の含有率な１〜ｌＯ％の範囲内に選
択し、た理由は、１９ｇ未尚ではワイヤ６の耐食性が十
分に改善されず、また１０％を超えると。In addition, if the content is less than 1%, the corrosion resistance effect of the wire 6 due to the inclusion of silicon will not be sufficiently exhibited. If the weight is less than 19g, the corrosion resistance of the wire 6 will not be sufficiently improved, and if it exceeds 10%.

ワイーｖ６の伸びが低下し、ワイヤ６の耐食性及び耐応
力性が悪くなるためである。This is because the elongation of the wire V6 decreases and the corrosion resistance and stress resistance of the wire 6 deteriorate.

このように１本実施例では、ワイヤ６の組成として、ア
ルミニウノ・の他に、それぞれ１〜１０％のシリコ／と
銅な含有させたことにより、アルミニウムワイヤの低コ
スト性を維持しながら、耐食性な著しく向上させること
ができろう なお１本発明は前記実施例に限定されるものではない。In this way, in this embodiment, the composition of the wire 6 includes 1 to 10% of silico and copper in addition to aluminum, thereby maintaining the low cost of aluminum wire while improving corrosion resistance. However, the present invention is not limited to the above embodiments.

また５本発明はプラスチックパッケージよりなる半導体
装置に限定されるものでもない。Furthermore, the present invention is not limited to semiconductor devices made of plastic packages.

以上説明したように１本発明によれば、アルミニウム系
ワイヤの低コスト性を維持しながら、ワイヤの耐食性を
大ｒｆｊに向上させ、腐食による断線を防止できろうAs explained above, according to the present invention, while maintaining the low cost of aluminum wire, the corrosion resistance of the wire can be greatly improved to RFJ, and breakage due to corrosion can be prevented.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明による半導体装置の一実施例を示す断面図で
ある。 ■・・°ＩＪ　−）”フレーム、２・・・タブ、３・・
・ペレット。 ５・・・インナーリード部、６−・・ワイヤ、７・・・
アウターリード部、８・・・レジ７つThe figure is a sectional view showing an embodiment of a semiconductor device according to the present invention. ■...°IJ-)" frame, 2...tab, 3...
·pellet. 5... Inner lead part, 6-... Wire, 7...
Outer lead section, 8...7 cash registers

Claims (1)

【特許請求の範囲】 １、　ベレットのポンディングパッドとリード配線部と
を接続するワイヤとして、アルミニウム、シリコンおよ
び銅よりなるワイヤを用いることな特徴とする半導体装
置。 ２、ワイヤがシリコンを１〜１ｏ５Ａ、銅を１〜１０％
含むことを特徴とする特許請求の範囲第１項記戦の半導
体装置。[Scope of Claims] 1. A semiconductor device characterized in that a wire made of aluminum, silicon, and copper is used as a wire for connecting a bullet bonding pad and a lead wiring section. 2.Wire is silicon 1~1o5A, copper 1~10%
A semiconductor device according to claim 1, characterized in that:
JP57177659A 1982-10-12 1982-10-12 Semiconductor device Pending JPS5967642A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57177659A JPS5967642A (en) 1982-10-12 1982-10-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57177659A JPS5967642A (en) 1982-10-12 1982-10-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5967642A true JPS5967642A (en) 1984-04-17

Family

ID=16034852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57177659A Pending JPS5967642A (en) 1982-10-12 1982-10-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5967642A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8915337B2 (en) 2011-10-19 2014-12-23 Mitsubishi Heavy Industries, Ltd. Brake device
WO2024122089A1 (en) * 2022-12-05 2024-06-13 日鉄ケミカル＆マテリアル株式会社 Al alloy bonding wire

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8915337B2 (en) 2011-10-19 2014-12-23 Mitsubishi Heavy Industries, Ltd. Brake device
WO2024122089A1 (en) * 2022-12-05 2024-06-13 日鉄ケミカル＆マテリアル株式会社 Al alloy bonding wire

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