JPS5967629A - 静電吸着装置 - Google Patents

静電吸着装置

Info

Publication number
JPS5967629A
JPS5967629A JP57177518A JP17751882A JPS5967629A JP S5967629 A JPS5967629 A JP S5967629A JP 57177518 A JP57177518 A JP 57177518A JP 17751882 A JP17751882 A JP 17751882A JP S5967629 A JPS5967629 A JP S5967629A
Authority
JP
Japan
Prior art keywords
wafer
force
voltage
peeling force
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57177518A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0263304B2 (enExample
Inventor
Shoichi Tanimoto
昭一 谷元
Yukio Kakizaki
幸雄 柿崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Nippon Kogaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, Nippon Kogaku KK filed Critical Nikon Corp
Priority to JP57177518A priority Critical patent/JPS5967629A/ja
Publication of JPS5967629A publication Critical patent/JPS5967629A/ja
Publication of JPH0263304B2 publication Critical patent/JPH0263304B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Jigs For Machine Tools (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP57177518A 1982-10-12 1982-10-12 静電吸着装置 Granted JPS5967629A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57177518A JPS5967629A (ja) 1982-10-12 1982-10-12 静電吸着装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57177518A JPS5967629A (ja) 1982-10-12 1982-10-12 静電吸着装置

Publications (2)

Publication Number Publication Date
JPS5967629A true JPS5967629A (ja) 1984-04-17
JPH0263304B2 JPH0263304B2 (enExample) 1990-12-27

Family

ID=16032310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57177518A Granted JPS5967629A (ja) 1982-10-12 1982-10-12 静電吸着装置

Country Status (1)

Country Link
JP (1) JPS5967629A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01227454A (ja) * 1988-03-08 1989-09-11 Nippon Telegr & Teleph Corp <Ntt> 静電チャック
JPH0496221A (ja) * 1990-08-03 1992-03-27 Matsushita Electric Ind Co Ltd 半導体製造装置及びその製造方法
JPH04213854A (ja) * 1990-12-10 1992-08-04 Fujitsu Ltd 静電吸着装置
JPH04247639A (ja) * 1991-02-04 1992-09-03 Fujitsu Ltd 静電チャックのウエーハ吸着・離脱方法
US5350428A (en) * 1993-06-17 1994-09-27 Vlsi Technology, Inc. Electrostatic apparatus and method for removing particles from semiconductor wafers
US6140213A (en) * 1993-03-30 2000-10-31 Sony Corporation Semiconductor wafer and method of manufacturing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014107382A (ja) * 2012-11-27 2014-06-09 Fuji Electric Co Ltd 半導体基板の脱離方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01227454A (ja) * 1988-03-08 1989-09-11 Nippon Telegr & Teleph Corp <Ntt> 静電チャック
JPH0496221A (ja) * 1990-08-03 1992-03-27 Matsushita Electric Ind Co Ltd 半導体製造装置及びその製造方法
JPH04213854A (ja) * 1990-12-10 1992-08-04 Fujitsu Ltd 静電吸着装置
JPH04247639A (ja) * 1991-02-04 1992-09-03 Fujitsu Ltd 静電チャックのウエーハ吸着・離脱方法
US6140213A (en) * 1993-03-30 2000-10-31 Sony Corporation Semiconductor wafer and method of manufacturing same
US5350428A (en) * 1993-06-17 1994-09-27 Vlsi Technology, Inc. Electrostatic apparatus and method for removing particles from semiconductor wafers

Also Published As

Publication number Publication date
JPH0263304B2 (enExample) 1990-12-27

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