JPS5966042A - Electrostatic type focusing deflection device - Google Patents

Electrostatic type focusing deflection device

Info

Publication number
JPS5966042A
JPS5966042A JP17613682A JP17613682A JPS5966042A JP S5966042 A JPS5966042 A JP S5966042A JP 17613682 A JP17613682 A JP 17613682A JP 17613682 A JP17613682 A JP 17613682A JP S5966042 A JPS5966042 A JP S5966042A
Authority
JP
Japan
Prior art keywords
lens
aberration
deflector
electrostatic
charged particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17613682A
Other languages
Japanese (ja)
Inventor
Katsuhiro Kuroda
勝広 黒田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17613682A priority Critical patent/JPS5966042A/en
Publication of JPS5966042A publication Critical patent/JPS5966042A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Abstract

PURPOSE:To deflect charged particle rays largely as left focused so thinly intact, by having a device made up of a first electrostatic lens focusing an image formation point far away than a sample surface and a second electrostatic lens focusing the charged particle rays on the sample surface, besides a deflector existing between them. CONSTITUTION:Charged particle rays 2 out of an object point 1 are focused to a point 8 far away than an image surface 3 by a first electrostatic type lens 6 and also focused on the image surface 3 by a second electrostatic type lens 7, while deflected by a deflector 5 disposed between lenses 6 and 7. As a result, since magnification of the lens 7 comes to a smaller negative value than 1, aberration on the axis of the lens 7 is made to be very smaller and the aberration on the image surface 3 due to the lens 6 can be made small as well, making the rays 2 focusable so thinly, while deflecting aberration is produced by aberration at the outside axis between the deflector 5 and the lens 7 but this aberration can be compensated with each other so that large deflection can be achieved.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、静電型のレンズと偏向器に係り、特に、荷電
粒子線を細く絞った状態で大きく偏向する際に好適な集
束偏向系である。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to an electrostatic lens and a deflector, and particularly to a focusing/deflecting system suitable for greatly deflecting a charged particle beam while focusing it narrowly. be.

〔従来技術〕[Prior art]

従来の静電型集束偏向系は、荷電粒子線を集束させるレ
ンズに対して、第1図に示すように偏向器を物点側に配
置させるかもしくは第2図に示すように像面側に配置し
たものでめった。図においてIFi物点、2は荷電粒子
線、3は像面、4eま静電レンズ、5は偏向器である。
In conventional electrostatic focusing/deflecting systems, a deflector is placed on the object side as shown in Figure 1, or on the image plane side as shown in Figure 2, with respect to the lens that focuses the charged particle beam. It was very difficult to find what I had set up. In the figure, IFi is an object point, 2 is a charged particle beam, 3 is an image plane, 4e is an electrostatic lens, and 5 is a deflector.

前者は、軸上で粒子+ljiヲ細く絞れるか、偏向収差
が大きく大角度偏向に不向きである。後者は、レンズが
長焦点であるために、軸上ですぐに十分絞れない欠点7
5iする。
The former is not suitable for large-angle deflection because the particles can be narrowed down on the axis or the deflection aberration is large. The latter has the disadvantage of not being able to stop down quickly enough on the axis because the lens has a long focal point7
Do 5i.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、軸上でも犬きく偏向しても荷′11粒
子?細く絞れる静電型の集束偏向系を提ntすることに
ある。
The purpose of the present invention is to solve the problem of whether the 11 particles are loaded even on the axis or when deflected sharply. The object of the present invention is to provide an electrostatic focusing/deflecting system that can focus finely.

〔発明の詳細な説明〕[Detailed description of the invention]

本発明は軸上で細く絞るために偏向器はレンズの物点1
11]に配置する。このとき、従来方式では偏向収差が
大きくなるが、偏向器ケ通過した粒子線を積極的にレン
ズの軸外を通過せしめることによシ偏向器で生じる偏向
収差をレンズの軸外収差と相殺させるように構成する。
In the present invention, in order to narrow the aperture on the axis, the deflector is used at the object point 1 of the lens.
11]. At this time, in the conventional method, the deflection aberration increases, but by actively making the particle beam that has passed through the deflector pass outside the axis of the lens, the deflection aberration caused by the deflector can be canceled out by the off-axis aberration of the lens. Configure it as follows.

すなわち、外辺レンズには粒子線をレンズ内で回転させ
る作用がないために、異方性の収差が全く生じず、等方
性の収差のみとなる。そこで、レンズと偏向器が独立に
配置しても偏向収差の打ち消しが可能となる。
That is, since the outer lens does not have the effect of rotating the particle beam within the lens, no anisotropic aberration occurs at all, and only isotropic aberration occurs. Therefore, even if the lens and the deflector are arranged independently, it is possible to cancel the deflection aberration.

〔実施例〕〔Example〕

以下、本発明の一実施例を第3図によシ説glする。物
点1よシ出た荷電粒子線2は、静電型のレンズ6によυ
像面3よシ遠カの点8に結像されておシ、レンズ7によ
シ像面3上に結像されている。
An embodiment of the present invention will be explained below with reference to FIG. The charged particle beam 2 emitted from the object point 1 is focused by an electrostatic lens 6.
An image is formed at a point 8 at a distance from the image plane 3, and an image is formed on the image plane 3 by the lens 7.

このレンズ6と7の間に偏向器5が配置されておシ、1
駅而3上の所望の位1Δに粒子線が偏向されるように動
作させられる。
A deflector 5 is arranged between the lenses 6 and 7.
The particle beam is operated to be deflected to a desired degree of 1Δ above the station.

本光学系において、レンズ70倍率は1よシ小さい負の
値をもつために、レンズ7の軸上収差は非常に小さくす
ることができる。一方、レンズ6の収差係数は大きいが
、粒子線の集束角9が小さいことと、レンズ7が縮小系
でβるために、レンズ6による像面3上の収差は十分小
さくできる。
In this optical system, since the lens 70 magnification has a negative value smaller than 1, the axial aberration of the lens 7 can be made very small. On the other hand, although the aberration coefficient of the lens 6 is large, the aberration on the image plane 3 due to the lens 6 can be made sufficiently small because the convergence angle 9 of the particle beam is small and the lens 7 is a reduction system.

したがって、レンズ6と7による収差は小さく、粒子線
は細く絞ることが可能となる。
Therefore, the aberration caused by the lenses 6 and 7 is small, and the particle beam can be narrowed down.

一方、偏向収差は、偏向器5とレンズ7の軸外収差によ
シ生じるが、お互い打ち消し合うことができる。説明の
一例として偏向色収差について第4図を用いて説明する
。すなわち、偏向器5で偏向された速度の異なる粒子線
10と11(10の方が速い)が試料面3上の偏向点1
2で一致することt以下に述べる。
On the other hand, deflection aberrations are caused by off-axis aberrations of the deflector 5 and the lens 7, but they can cancel each other out. As an example of explanation, deflection chromatic aberration will be explained using FIG. 4. That is, particle beams 10 and 11 having different speeds (10 is faster) deflected by the deflector 5 are deflected at the deflection point 1 on the sample surface 3.
The fact that 2 matches is described below.

物点1よシ出た粒子線はレンズ7によシ軌道13となっ
ているが、速度の遅い粒子線は軌道14となシ試料面3
よシずれた結像面15−ヒで結像する。し7”Cがって
、幾何光学的作図により、粒子線10と11はそれぞれ
12と16の点を通過するようにレンズ7で屈折する。
The particle beam emitted from the object point 1 has a trajectory 13 when viewed from the lens 7, but the particle beam with a low velocity has a trajectory 14.
An image is formed on a shifted imaging plane 15-A. Accordingly, according to geometrical optical construction, particle beams 10 and 11 are refracted by lens 7 so as to pass through points 12 and 16, respectively.

とのとき試料面3上で粒子線10と11は一致している
。すなわち偏向色収差は生じないことになる。他の収差
も同様にして打ち消されることが証明できる。
When , the particle beams 10 and 11 coincide on the sample surface 3. In other words, no polarization chromatic aberration occurs. It can be proven that other aberrations can be canceled in the same way.

第4図は、レンズ7の特性と偏向器5の位置を特殊な条
件(レンズ7の前焦点位置)にして偏向収差のみならず
試料面3に粒子線10が垂直に入射するようにした。こ
のような条件で、さらにレンズ6と7の電極6−2と7
−2の電位を一致させることもでき、レンズ電源を1個
で行なうこともできる。第3図の実施例では、レンズ6
と7をユニポテンシャルレンズヲ嶽定したがパイポテン
シャルレンズでも同様に行なえる。また、レンズ電極6
−3と7−3′(r−偏向器5の電極で代用してもよい
ことは言うまでもない。
In FIG. 4, the characteristics of the lens 7 and the position of the deflector 5 are set under special conditions (the front focal position of the lens 7) so that not only the deflection aberration but also the particle beam 10 is perpendicularly incident on the sample surface 3. Under these conditions, electrodes 6-2 and 7 of lenses 6 and 7 are
-2 potentials can be made to match, and a single lens power source can be used. In the embodiment of FIG. 3, the lens 6
and 7 are fixed on a unipotential lens, but they can be done similarly with a pipotential lens. In addition, the lens electrode 6
-3 and 7-3' (r- It goes without saying that the electrodes of the deflector 5 may be used instead.

〔発り」の効果〕[Effect of departure]

本発明によれば、偏向収差を小さくできるので荷電粒子
全綱く絞ったままで大きく偏向できる効果がある。また
、試料面への入射を垂直にもできるので、試料面の高さ
変化に対しても回向感度が袈わらない特徴もある。
According to the present invention, since the deflection aberration can be reduced, there is an effect that the charged particles can be largely deflected while remaining tightly focused. Furthermore, since the incidence on the sample surface can be made perpendicular, there is also a feature that the direction sensitivity does not deteriorate even when the height of the sample surface changes.

【図面の簡単な説明】[Brief explanation of the drawing]

第1.2図は従来技術を説明するための基本構成?示し
た図面である。 ゞ 第3図は本発明の一実施例を示した図面である。 第4図は偏向収差が打ち消されること”kB兄明するた
めの図面である。 ・ 1・・・物点、2・・・荷電粒子線、3・・・像面、4
,6゜7・・・靜岨型レンズ、6−1〜6−3.7−1
〜7−3・・・電極、5・・・偏向器、8・・・レンズ
6の結像点、9・・・レンズ6による粒子線の集束角、
1.0.11・・・速度の異なる粒子線、12・・・偏
向点、13゜14・・・レンズ7通過後の粒子軌道、1
5・・・粒子軌道14の結像面、16・・・粒子線11
の通過点。 代理人 弁理士 薄田利幸、、、、、、、1...層、
。 ′、1:12.i・、、゛
Is Figure 1.2 the basic configuration for explaining the conventional technology? This is a drawing shown. FIG. 3 is a diagram showing an embodiment of the present invention. Figure 4 is a drawing to demonstrate that deflection aberrations are canceled by ``kB''. ・1...object point, 2...charged particle beam, 3...image plane, 4
, 6゜7... Seiko type lens, 6-1 to 6-3.7-1
~7-3... Electrode, 5... Deflector, 8... Imaging point of lens 6, 9... Convergence angle of particle beam by lens 6,
1.0.11...Particle beam with different speed, 12...Deflection point, 13°14...Particle trajectory after passing through lens 7, 1
5... Image plane of particle trajectory 14, 16... Particle beam 11
passing point. Agent Patent Attorney Toshiyuki Usuda, 1. .. .. layer,
. ', 1:12. i・、、゛

Claims (1)

【特許請求の範囲】 1、物点よシ出た荷電粒子線を集束するものであって、
その結像点を試料面よシ遠方にもつ第1の静電レンズと
、該第1の靜′亀レンズよシの荷延粒子f#全前記試料
面上に集束させる第2の静電レンズと、前記第1および
第2の静電レンズ間にあって荷電粒子線を偏向させる偏
向器とからなることを特徴とする静電型集束偏向装置。 2、前記第1および第2の静電レンズを同一の屯Sで駆
動させることを特徴とする特許請求の範囲第1項記載の
静1区型集束偏向装置。 3、前記偏向器を記2の静電レンズの前焦点位置附近に
配置したことを特徴とする特許請求の範囲第1項記載の
静電型集束偏向装置。
[Claims] 1. A device that focuses a charged particle beam emitted from an object point,
a first electrostatic lens whose imaging point is far away from the sample surface; and a second electrostatic lens that focuses all of the particles f# from the first lens onto the sample surface. and a deflector that is located between the first and second electrostatic lenses and deflects the charged particle beam. 2. The static one-section type focusing/deflecting device according to claim 1, wherein the first and second electrostatic lenses are driven by the same force S. 3. The electrostatic focusing/deflecting device according to claim 1, wherein the deflector is arranged near the front focal point of the electrostatic lens described in 2 above.
JP17613682A 1982-10-08 1982-10-08 Electrostatic type focusing deflection device Pending JPS5966042A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17613682A JPS5966042A (en) 1982-10-08 1982-10-08 Electrostatic type focusing deflection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17613682A JPS5966042A (en) 1982-10-08 1982-10-08 Electrostatic type focusing deflection device

Publications (1)

Publication Number Publication Date
JPS5966042A true JPS5966042A (en) 1984-04-14

Family

ID=16008287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17613682A Pending JPS5966042A (en) 1982-10-08 1982-10-08 Electrostatic type focusing deflection device

Country Status (1)

Country Link
JP (1) JPS5966042A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE1900143A1 (en) * 2019-08-30 2021-03-01 Scienta Omicron Ab Electrostatic lens for controlling beam of charged particles

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE1900143A1 (en) * 2019-08-30 2021-03-01 Scienta Omicron Ab Electrostatic lens for controlling beam of charged particles
SE1951077A1 (en) * 2019-08-30 2021-03-01 Scienta Omicron Ab Electrostatic lens for controlling beam of electrons
SE543575C2 (en) * 2019-08-30 2021-04-06 Scienta Omicron Ab Electrostatic lens for controlling beam of charged particles
SE543641C2 (en) * 2019-08-30 2021-05-11 Scienta Omicron Ab Electrostatic lens for controlling beam of electrons
SE543641C8 (en) * 2019-08-30 2022-05-03 Scienta Omicron Ab Electrostatic lens for controlling beam of electrons

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