JPS5964591A - 単結晶引上装置 - Google Patents
単結晶引上装置Info
- Publication number
- JPS5964591A JPS5964591A JP17282082A JP17282082A JPS5964591A JP S5964591 A JPS5964591 A JP S5964591A JP 17282082 A JP17282082 A JP 17282082A JP 17282082 A JP17282082 A JP 17282082A JP S5964591 A JPS5964591 A JP S5964591A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- single crystal
- melt
- crystal
- temperature gradient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17282082A JPS5964591A (ja) | 1982-09-30 | 1982-09-30 | 単結晶引上装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17282082A JPS5964591A (ja) | 1982-09-30 | 1982-09-30 | 単結晶引上装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5964591A true JPS5964591A (ja) | 1984-04-12 |
JPS644998B2 JPS644998B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-01-27 |
Family
ID=15948973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17282082A Granted JPS5964591A (ja) | 1982-09-30 | 1982-09-30 | 単結晶引上装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5964591A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6046993A (ja) * | 1983-08-23 | 1985-03-14 | Sumitomo Electric Ind Ltd | 単結晶引上装置 |
JPS6046998A (ja) * | 1983-08-26 | 1985-03-14 | Sumitomo Electric Ind Ltd | 単結晶引上方法及びそのための装置 |
FR2569430A1 (fr) * | 1984-08-24 | 1986-02-28 | Sony Corp | Appareil pour extraire des monocristaux d'un bain de materiau semi-conducteur fondu contenu dans un creuset |
EP1107646A1 (de) * | 1999-12-09 | 2001-06-13 | Freiberger Compound Materials GmbH | Heizelement für Schmelztiegel und Anordnung von Heizelementen |
-
1982
- 1982-09-30 JP JP17282082A patent/JPS5964591A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6046993A (ja) * | 1983-08-23 | 1985-03-14 | Sumitomo Electric Ind Ltd | 単結晶引上装置 |
JPS6046998A (ja) * | 1983-08-26 | 1985-03-14 | Sumitomo Electric Ind Ltd | 単結晶引上方法及びそのための装置 |
FR2569430A1 (fr) * | 1984-08-24 | 1986-02-28 | Sony Corp | Appareil pour extraire des monocristaux d'un bain de materiau semi-conducteur fondu contenu dans un creuset |
EP1107646A1 (de) * | 1999-12-09 | 2001-06-13 | Freiberger Compound Materials GmbH | Heizelement für Schmelztiegel und Anordnung von Heizelementen |
US6355910B1 (en) | 1999-12-09 | 2002-03-12 | Freiberger Compound Materials Gmbh | Heating element for heating crucibles and arrangement of heating elements |
Also Published As
Publication number | Publication date |
---|---|
JPS644998B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-01-27 |