JPS5964591A - 単結晶引上装置 - Google Patents

単結晶引上装置

Info

Publication number
JPS5964591A
JPS5964591A JP17282082A JP17282082A JPS5964591A JP S5964591 A JPS5964591 A JP S5964591A JP 17282082 A JP17282082 A JP 17282082A JP 17282082 A JP17282082 A JP 17282082A JP S5964591 A JPS5964591 A JP S5964591A
Authority
JP
Japan
Prior art keywords
heater
single crystal
melt
crystal
temperature gradient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17282082A
Other languages
English (en)
Japanese (ja)
Other versions
JPS644998B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Riyuusuke Nakai
龍資 中井
Masao Kishi
岸 正雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP17282082A priority Critical patent/JPS5964591A/ja
Publication of JPS5964591A publication Critical patent/JPS5964591A/ja
Publication of JPS644998B2 publication Critical patent/JPS644998B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP17282082A 1982-09-30 1982-09-30 単結晶引上装置 Granted JPS5964591A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17282082A JPS5964591A (ja) 1982-09-30 1982-09-30 単結晶引上装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17282082A JPS5964591A (ja) 1982-09-30 1982-09-30 単結晶引上装置

Publications (2)

Publication Number Publication Date
JPS5964591A true JPS5964591A (ja) 1984-04-12
JPS644998B2 JPS644998B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-01-27

Family

ID=15948973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17282082A Granted JPS5964591A (ja) 1982-09-30 1982-09-30 単結晶引上装置

Country Status (1)

Country Link
JP (1) JPS5964591A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046993A (ja) * 1983-08-23 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上装置
JPS6046998A (ja) * 1983-08-26 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上方法及びそのための装置
FR2569430A1 (fr) * 1984-08-24 1986-02-28 Sony Corp Appareil pour extraire des monocristaux d'un bain de materiau semi-conducteur fondu contenu dans un creuset
EP1107646A1 (de) * 1999-12-09 2001-06-13 Freiberger Compound Materials GmbH Heizelement für Schmelztiegel und Anordnung von Heizelementen

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046993A (ja) * 1983-08-23 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上装置
JPS6046998A (ja) * 1983-08-26 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上方法及びそのための装置
FR2569430A1 (fr) * 1984-08-24 1986-02-28 Sony Corp Appareil pour extraire des monocristaux d'un bain de materiau semi-conducteur fondu contenu dans un creuset
EP1107646A1 (de) * 1999-12-09 2001-06-13 Freiberger Compound Materials GmbH Heizelement für Schmelztiegel und Anordnung von Heizelementen
US6355910B1 (en) 1999-12-09 2002-03-12 Freiberger Compound Materials Gmbh Heating element for heating crucibles and arrangement of heating elements

Also Published As

Publication number Publication date
JPS644998B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-01-27

Similar Documents

Publication Publication Date Title
JPS6046998A (ja) 単結晶引上方法及びそのための装置
JPS6046993A (ja) 単結晶引上装置
JPH03295891A (ja) シリコン単結晶の製造方法
JPH0559874B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4944925A (en) Apparatus for producing single crystals
JP2973917B2 (ja) 単結晶引き上げ方法
JP2688137B2 (ja) シリコン単結晶の引上げ方法
JPS5964591A (ja) 単結晶引上装置
JPH04104988A (ja) 単結晶成長方法
US3261722A (en) Process for preparing semiconductor ingots within a depression
JPS60103097A (ja) 単結晶引上装置
JPS6117798B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS63252989A (ja) 引上法による半導体単結晶の製造方法
JPS5930795A (ja) 単結晶引上装置
JPH0480875B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SU1740505A1 (ru) Способ выращивани монокристаллов гематита @ -F @ О @
JP3018738B2 (ja) 単結晶製造装置
JPH026382A (ja) 単結晶引上げ装置
JP3885245B2 (ja) 単結晶引上方法
JP2531875B2 (ja) 化合物半導体単結晶の製造方法
JP2982053B2 (ja) 単結晶引き上げ方法
JP2757865B2 (ja) ▲iii▼−▲v▼族化合物半導体単結晶の製造方法
JP2700145B2 (ja) 化合物半導体単結晶の製造方法
JPH09227280A (ja) 単結晶育成方法
JPH051236B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)