JPS5961943A - Wafer transfer mechanism - Google Patents

Wafer transfer mechanism

Info

Publication number
JPS5961943A
JPS5961943A JP17276882A JP17276882A JPS5961943A JP S5961943 A JPS5961943 A JP S5961943A JP 17276882 A JP17276882 A JP 17276882A JP 17276882 A JP17276882 A JP 17276882A JP S5961943 A JPS5961943 A JP S5961943A
Authority
JP
Japan
Prior art keywords
wafer
transfer
wheels
transport
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17276882A
Other languages
Japanese (ja)
Inventor
Toshiyuki Matsuo
松尾　俊之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP17276882A priority Critical patent/JPS5961943A/en
Publication of JPS5961943A publication Critical patent/JPS5961943A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715—Changing the direction of the conveying path

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To quickly transfer wafers under the high quality condition by providing a plurality of transfer promotion wheels on the transfer path. CONSTITUTION:The guide rails 33 provided in parallel along the transfer direction of the transfer path are curved in the form of character as in the sectional view on the opposing internal wall suface, forming a wafer accommodating groove 33a. A plurality of transfer promoting wheels 34 which are provided in such a manner that the circumferential part is exposed to the transfer surface 27 in the transfer path has the rotating function like a ball bearing and thereby smoothly transfers the wafer 24. Therefore, the wafer 24 is very smoothly supplied to the wafer accommodating part 26a utilizing the inclined condition of the heating chamber 21, feed effect by the transfer promoting wheels 34 provided on the transfer path and a weight of wafer itself 24. Thereby, the wafer can be quickly transferred under the high quality condition, ensuring improvement in productivity.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、ウェハ搬送機構に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a wafer transport mechanism.

発明の技術的背景 従来、半導体装置の製造に使用される蒸着装置等には、
例えば第１図に示す如きウェハ搬送機構が使用されてい
る。このつｒハ搬送機構１０は、対設されたガイドレー
ル１１間にウェハＩ２を保持すると共に、ウェハ供給部
Ｉ３からウェハ搬出部Ｉ４にかけてガイドレール１１間
のウェハ搬送路Ｚ５を下向きに傾斜させて、ウェハ１２
の自重によってウエノ′−１２を搬送するようになって
いる。TECHNICAL BACKGROUND OF THE INVENTION Conventionally, vapor deposition equipment and the like used for manufacturing semiconductor devices include:
For example, a wafer transport mechanism as shown in FIG. 1 is used. The wafer transport mechanism 10 holds the wafer I2 between the guide rails 11 arranged oppositely, and tilts the wafer transport path Z5 between the guide rails 11 downward from the wafer supply section I3 to the wafer unloading section I4. , wafer 12
Ueno'-12 is transported by its own weight.

〔背景技術の問題ん 前述のように構成されたウェハ搬送機構ゴは、次のよう
な欠点を有している。[Background Art Problems] The wafer transport mechanism configured as described above has the following drawbacks.

■　ウェハＩ２の自重を利用して搬送するため、搬送の
際にウェハ１２が揺れる所謂ピッチングが起き、搬送に
支障を来たす。(2) Since the wafer I2 is transported using its own weight, so-called pitching, in which the wafer 12 shakes during transport, occurs, which hinders the transport.

■　ウェハ１２の裏面にごみ等が付着していたシ、ウェ
ハ１２が反りている場合には円滑にウェハ１２ｆ搬送で
きず、生産性を低下する。(2) If dust or the like is attached to the back surface of the wafer 12, or if the wafer 12 is warped, the wafer 12f cannot be smoothly transported, resulting in a decrease in productivity.

〔発明の目的〕[Purpose of the invention]

本発明は、ウェノ・を高品質の状態で極めて速やかに搬
送して生産性を向上させることができるウェハ搬送機構
を提供することをその目的とするものでおる。An object of the present invention is to provide a wafer transport mechanism that can transport wafers extremely quickly in a high-quality state and improve productivity.

〔発明の概吸〕[Summary of the invention]

本発明は、搬送路に複数個の搬送促進車輪を設けたこと
により、ウエノ・を高品質の状態で極めて速やかに搬送
して生産性の向上を達成したウェハ搬送機構である。The present invention is a wafer transport mechanism that achieves improved productivity by transporting wafers extremely quickly in a high quality state by providing a plurality of transport promoting wheels on the transport path.

発明の実施例 以下、本発明の実施例について図面を参照して説明する
。Embodiments of the Invention Hereinafter, embodiments of the present invention will be described with reference to the drawings.

第２図は、本発明の一実施例のウェハ搬送機構を適用し
た蒸着装置の概略構成を示す説明図である。図中２０は
、スノＲツタ室である。スパッタ室２０の側部には、ス
ノｅツタ室２ｏの上方から傾斜した状態で連通されたヒ
ーティング室２１と、スパッタ室２０に連通して下方に
傾斜した状態で導出されたクーりング室２２とが設けら
れている。ヒーティング室２１の先端部には、被処理前
のウェハ２４を多数枚収容したローディング室２３が設
けられている。クーリング室２２の先端部には、処理後
のウェハ２４を収容するアンローディング室２５が設け
られている。ヒーティング室２１及びクーリング室２２
が設けられたスパッタ室２０の側部に対向するスパッタ
室２０の内壁にはターゲット２５が垂設されている。タ
ーゲット２５の近傍には、これに対向してウェハ架台２
６が設けられている。ウェハ架台２６は、その下端部を
支点にして回動するようになっている。ウェハ架台２６
の回動は、ヒーティング室２１の搬送面２７とウェハ架
台２６のウェハ収容部２６ｔｈ、＋とがほぼ同一平面を
なす位置及び、クーリング室２２の搬送面２７とウェハ
収容部２６ａとがほぼ同一平面をなす位置でウェハ架台
２６の位置を固定するようになっている。また、同図中
２８は、ローディング２５設けられたウェハ収納容器、
２９は、アンローディング室２５に設けられたウェハ収
納容器である。ヒーティング室２Ｚ及びクーリング室２
２にはウェハ搬送機構３ｏが設けられている。−，３１
，３２は、ヒーティング室２Ｉ及びクーリング室２２に
夫々設けられたウェハストッパーである。第３図は、ヒ
ーティング室２Ｉ及びクーリング室２２に設けられたウ
ェハ搬送機構３０の斜視図である。FIG. 2 is an explanatory diagram showing a schematic configuration of a vapor deposition apparatus to which a wafer transport mechanism according to an embodiment of the present invention is applied. 20 in the figure is the Snow R ivy room. On the side of the sputtering chamber 20, there is a heating chamber 21 that is connected to the sputtering chamber 20 in an inclined manner from above, and a cooling chamber that is connected to the sputtering chamber 20 and led out in a downwardly inclined manner. 22 are provided. A loading chamber 23 that accommodates a large number of wafers 24 to be processed is provided at the tip of the heating chamber 21 . An unloading chamber 25 is provided at the tip of the cooling chamber 22 to accommodate the processed wafer 24 . Heating chamber 21 and cooling chamber 22
A target 25 is vertically provided on the inner wall of the sputtering chamber 20 facing the side of the sputtering chamber 20 in which the sputtering chamber 20 is provided. Near the target 25, there is a wafer stand 2 facing it.
6 is provided. The wafer pedestal 26 is configured to rotate using its lower end as a fulcrum. Wafer stand 26
The rotation is performed at a position where the transfer surface 27 of the heating chamber 21 and the wafer storage section 26th,+ of the wafer stand 26 are approximately on the same plane, and when the transfer surface 27 of the cooling chamber 22 and the wafer storage section 26a are approximately on the same plane. The position of the wafer stand 26 is fixed at a flat position. In addition, 28 in the figure is a wafer storage container provided with a loading 25;
29 is a wafer storage container provided in the unloading chamber 25. Heating chamber 2Z and cooling chamber 2
2 is provided with a wafer transport mechanism 3o. -,31
, 32 are wafer stoppers provided in the heating chamber 2I and the cooling chamber 22, respectively. FIG. 3 is a perspective view of the wafer transport mechanism 30 provided in the heating chamber 2I and the cooling chamber 22.

コノウェハ搬送機構３０は、ヒーティング室２１或はク
ーリング室２２の搬送路に搬送方向に沿って並列に対設
されたガイドレール３３を有している。ガイドレール３
３は、対向する内壁面を断面路コ字形に湾曲して、ウェ
ハ収容溝３　、？　ａ　ｆ：形成している。搬送路には
、周面部ケ搬送而２７に露出するようにして複数個の搬
送促進車輪３４が設けられている。搬送促進車輪３４は
、ボールベヤリング等の優れた回転機能を有するもので
あって、搬送路に供給されたウェハ２４を円滑に搬出す
る作用を有するものであれば、如何なるものでも良い。The wafer transfer mechanism 30 has guide rails 33 that are arranged in parallel in the transfer path of the heating chamber 21 or the cooling chamber 22 along the transfer direction. Guide rail 3
3, the opposing inner wall surfaces are curved to have a U-shaped cross section, and the wafer storage grooves 3, ? a f: Formed. A plurality of conveyance promoting wheels 34 are provided on the conveyance path so that their peripheral surfaces are exposed to the conveyor 27. The transport promoting wheels 34 may be of any type, such as a ball bearing, as long as it has an excellent rotational function and can smoothly transport the wafer 24 supplied to the transport path.

搬送路の先端部には、ウェハ２４の周縁部を把持する把
持部３５を有するウェハ固定具３６が搬送面２７から出
入自在に設けられている。なお、ウェハ搬送機構３０及
び蒸着装置５０の材質としては、ＳＵＳ　、９０３　、
　ＳＵＳ　３１６等のステンレススチール鋼等を使用す
るのが望ましい。A wafer fixture 36 having a gripping part 35 for gripping the peripheral edge of the wafer 24 is provided at the tip of the transport path so as to be movable in and out from the transport surface 27 . The materials of the wafer transport mechanism 30 and the vapor deposition device 50 include SUS, 903,
It is preferable to use stainless steel such as SUS 316.

而して、このように構成された蒸着装置５０によれば、
スノｅツタ室２０を所定の減圧状態に設定し、ウェハ架
台２６をウェハ収容部２６ａがヒーティング室２ｚの・
搬送面２７とほぼ同一平面上の位置に来たところで固定
しておき、ローディング室２３からヒーティング室２１
内にウェハ２４を供給する。ヒーティング室２１に供給
されたウェハ２４は、その搬出部で周縁部をウェハ固定
具３６の把持部３５にて把持されて固定されると共に、
ウェハストッパー３１にてローディング室２３からスパ
ッタ室２０への搬送を停止される。この状態でヒーティ
ング室２１中でウェハ２４に所定の熱処理が施される。According to the vapor deposition apparatus 50 configured in this way,
The snow ivy chamber 20 is set to a predetermined reduced pressure state, and the wafer stand 26 is placed so that the wafer accommodating portion 26a is in the heating chamber 2z.
It is fixed at a position almost on the same plane as the conveyance surface 27, and the heating chamber 21 is moved from the loading chamber 23 to the heating chamber 21.
The wafer 24 is fed into the inside. The wafer 24 supplied to the heating chamber 21 is held at its peripheral edge by the gripping part 35 of the wafer fixture 36 at the unloading part, and is fixed.
The wafer stopper 31 stops the wafer from being transferred from the loading chamber 23 to the sputtering chamber 20 . In this state, the wafer 24 is subjected to a predetermined heat treatment in the heating chamber 21.

ウェハ２４に熱処理が施されると、ウェハストッパー３
１及びウェハ固定具３６によるウエノ゛２４の固定が解
除され、ウエノ・２４は、ヒーティング室２Ｉの傾斜状
態と、搬送路に設けられた搬送促進車輪３４とによる送
９作用と、ウェハ２４自身の自重を利用して極めて円滑
にウェハ架台２６のウェハ収容部２６ｈＶｃ供給される
。ウェハ２４が供給されるとウェハ架台２６はターゲッ
ト２５に対向するように回転し、垂直になった状態で停
止する。次いで、ターゲット２５を使ったスパッタリン
グ処理によシ、ウェハ２４の表面に所定の薄膜が形成さ
れる。スパッタリング処理後、ウェハ架台２６は再び回
転してウェハ収容部２６ａがクーリング室２２の搬送面
２７とほぼ同一平向をなす位置に来たところで、その回
転を停止する。次に、ウェハ架台２６のウェハ固定機構
（図示せず）が解除され、ウェハ２４は、その自重によ
り極めて円滑にクーリング室２２の搬送路へと送υ込ま
れる。クーリング室２２にもヒーティング室２１と同様
にウェハ搬送機構３０が設けられているので、ウェハ２
４は、ヒーティング室２１での加熱処理同様に、搬送路
の傾斜面、搬送促進車輪３４とによシ、極めて速やかに
ウェハストッパー３２及びウェハ固定治具３６にて停止
される位置まで供給され、冷却処理が施される。冷却処
理の施されたウェハ２４は、ウェハストッパー３２及び
ウェハ固定治具３６による固定を解除され、搬送促進車
輪３４により速やかにアンローディング室２５のウェハ
収納容器２９内へと搬出される。When the wafer 24 is subjected to heat treatment, the wafer stopper 3
The fixation of the wafer 24 by the wafer fixing device 1 and the wafer fixing device 36 is released, and the wafer 24 is moved by the tilted state of the heating chamber 2I, the transport action by the transport promoting wheels 34 provided on the transport path, and the wafer 24 itself. The wafer is supplied to the wafer storage section 26hVc of the wafer stand 26 very smoothly by utilizing its own weight. When the wafer 24 is supplied, the wafer stand 26 rotates to face the target 25 and stops in a vertical state. Next, a predetermined thin film is formed on the surface of the wafer 24 by sputtering using the target 25. After the sputtering process, the wafer pedestal 26 rotates again and stops rotating when the wafer accommodating portion 26a comes to a position where it is substantially parallel to the transport surface 27 of the cooling chamber 22. Next, the wafer fixing mechanism (not shown) of the wafer pedestal 26 is released, and the wafer 24 is very smoothly transferred to the transport path of the cooling chamber 22 by its own weight. Since the cooling chamber 22 is also provided with a wafer transport mechanism 30 like the heating chamber 21, the wafer 2
Similarly to the heat treatment in the heating chamber 21, the wafer 4 is very quickly fed to the position where it is stopped by the wafer stopper 32 and the wafer fixing jig 36 due to the slanted surface of the transport path and the transport promoting wheels 34. , cooling treatment is performed. The wafer 24 that has been subjected to the cooling process is released from the wafer stopper 32 and the wafer fixing jig 36, and is quickly carried out into the wafer storage container 29 of the unloading chamber 25 by the transport promoting wheels 34.

このようにこの蒸着装置５０　によれば、ヒーティング
室２１及びクーリング室２２に搬送促進車輪３４を有す
るウエノ・搬出機構−も１を設けたので、ウェハ２４の
搬送操作を極めて速やかに行ない、生産性を向上させる
ことができる。According to this vapor deposition apparatus 50, the heating chamber 21 and the cooling chamber 22 are also provided with the wafer unloading mechanism 1 having the conveyance promoting wheels 34, so that the wafer 24 can be conveyed very quickly and the production can be carried out very quickly. can improve sex.

また、ウェハ２４の裏面にごみ等が付着していテモ、或
ｆｄ、ウェハ２４が反っていても、搬送促進車輪３４に
よりウエノ・２４を極めて円滑に搬送することができる
。また、搬送促進車輪３４によりてウェハ２４の搬送が
円滑になるので、搬送に伴って発生し易いチッピングを
阻止して、搬送による支障が起きるのを防止できる。Furthermore, even if the wafer 24 is warped due to dust or the like adhering to the back surface of the wafer 24, the wafer 24 can be transported extremely smoothly by the transport promoting wheels 34. Further, since the wafer 24 is smoothly transported by the transport promoting wheels 34, chipping that is likely to occur during transport can be prevented, and troubles caused by transport can be prevented.

〔発明の詳細 な説明した如く、本発明に係るウエノ・搬送機構によれ
ば、ウエノ・を高品質の状態で極めて速やかに搬送して
生産性を向上させることができるものである。[As described in detail of the invention, according to the wafer conveying mechanism according to the present invention, the wafer can be conveyed extremely quickly in a high quality state and productivity can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、従来のウェハ搬送機構の要部を示す斜視図、
第２図は、本発明のウェハ搬送機構を適用した蒸着装置
の概略構成を示す説明図、第３図は、同蒸着装置に適用
したウェハ搬送機構の一例を示す斜視図である。 ２０・・・スハッｐ’Ｍ、ｚｚ・・・ヒーティング室、
２２・・・クーリング室、２３・・・ローディング室、
２４・・ウェハ、２５・・・ターゲット、２６・・・ウ
ェハ架台、２７・・・搬送面、２６ＩＬ・・・ウェハ収
容部、２８．２９・・ウェハ収納容器、３０・・・ウェ
ハ搬ｔｓｌｌＮＮ、３　Ｚ　、　、？　ｚ・・・ウェハ
ストッパー、３３・・・ガイドレール、３３ａ・・・ウ
ェハ収容溝、３４・・搬送促進車輪、３５・・・把持部
、３６・・・ウェハ固定具、５ｏ・・・蒸着装置。 出願人代理人　　弁理士　鈴　江　武　彦第１図 埠FIG. 1 is a perspective view showing the main parts of a conventional wafer transport mechanism;
FIG. 2 is an explanatory diagram showing a schematic configuration of a vapor deposition apparatus to which the wafer transport mechanism of the present invention is applied, and FIG. 3 is a perspective view showing an example of the wafer transport mechanism applied to the same vapor deposition apparatus. 20...Shap'M,zz...Heating room,
22...Cooling room, 23...Loading room,
24...Wafer, 25...Target, 26...Wafer stand, 27...Transfer surface, 26IL...Wafer storage unit, 28.29...Wafer storage container, 30...Wafer transfer tsllNN, 3 Z, ,? z...Wafer stopper, 33...Guide rail, 33a...Wafer storage groove, 34...Transportation promotion wheel, 35...Gripper, 36...Wafer fixture, 5o...Vapor deposition device . Applicant's agent Patent attorney Takehiko Suzue Figure 1

Claims (1)

【特許請求の範囲】[Claims] 所定間隔で並列に対設されたガイドレールと、該ガイド
レール間に形成された搬送路と、該搬送路の搬送面に周
面を露出して回転自在に設けられた複数個の搬送促進車
輪とを具備することを特徴とするウェハ搬送機構。Guide rails arranged in parallel at predetermined intervals, a conveyance path formed between the guide rails, and a plurality of conveyance promoting wheels rotatably provided with exposed peripheral surfaces on the conveyance surface of the conveyance path. A wafer transfer mechanism characterized by comprising:
JP17276882A 1982-10-01 1982-10-01 Wafer transfer mechanism Pending JPS5961943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17276882A JPS5961943A (en) 1982-10-01 1982-10-01 Wafer transfer mechanism

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17276882A JPS5961943A (en) 1982-10-01 1982-10-01 Wafer transfer mechanism

Publications (1)

Publication Number Publication Date
JPS5961943A true JPS5961943A (en) 1984-04-09

Family

ID=15947971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17276882A Pending JPS5961943A (en) 1982-10-01 1982-10-01 Wafer transfer mechanism

Country Status (1)

Country Link
JP (1) JPS5961943A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4838237B2 (en) * 2004-04-30 2011-12-14 デビオテック ソシエテ アノニム Peristaltic pump system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4838237B2 (en) * 2004-04-30 2011-12-14 デビオテック ソシエテ アノニム Peristaltic pump system

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