JPS5961001A - Resistor - Google Patents

Resistor

Info

Publication number
JPS5961001A
JPS5961001A JP57170371A JP17037182A JPS5961001A JP S5961001 A JPS5961001 A JP S5961001A JP 57170371 A JP57170371 A JP 57170371A JP 17037182 A JP17037182 A JP 17037182A JP S5961001 A JPS5961001 A JP S5961001A
Authority
JP
Japan
Prior art keywords
resistor
film
adjustment
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57170371A
Other languages
Japanese (ja)
Inventor
斎藤 民雄
公平 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57170371A priority Critical patent/JPS5961001A/en
Publication of JPS5961001A publication Critical patent/JPS5961001A/en
Pending legal-status Critical Current

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  • Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、抵抗値を高精度に調整可能とした抵抗体に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a resistor whose resistance value can be adjusted with high precision.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

膜状抵抗体は薄膜抵抗体と厚膜抵抗体とに大別される。 Film resistors are broadly classified into thin film resistors and thick film resistors.

これらのうち、薄膜抵抗体は比抵抗のレンジが狭<1l
《Ω以下であるのに対し、厚膜抵抗体は比抵抗のレンジ
は1Ω程度から1 0mΩ。
Among these, thin film resistors have a narrow range of resistivity <1l.
《In contrast, the specific resistance of thick film resistors ranges from about 1Ω to 10mΩ.

100mΩ稈度寸でと広い利点がある。しかしながら、
これらの抵抗体、特に厚膜抵抗体は仕上り精度が悪いた
め、トリミングをしないと抵抗値を±10%程度の公差
におさめることは困難であった。このようにトリミング
した抵抗体は、トリミング時のマイクロクラッf7等に
起因する雑音が発生し易く、高精度の微小電流増幅回路
等の用途には適さない。
It has a wide range of advantages with a culm size of 100mΩ. however,
Since these resistors, especially thick film resistors, have poor finishing accuracy, it is difficult to keep the resistance value within a tolerance of about ±10% without trimming. A resistor trimmed in this manner is likely to generate noise due to microcracks f7 and the like during trimming, and is not suitable for applications such as high-precision microcurrent amplification circuits.

〔発明の目的〕[Purpose of the invention]

この発明の目的は、抵抗体膜にクラック等の悪影響を及
ぼすとと々く抵抗値を調整できる抵抗体を桿供すること
である。
An object of the present invention is to provide a resistor whose resistance value can be adjusted as soon as the resistor film is affected by cracks or other adverse effects.

〔発明の概要〕[Summary of the invention]

この発明に係る抵抗体は、対向したーヌ・[の主電極間
に複数の線状の調整用電極を配列形成す主電極と調整用
電極との間または調整用朗、罹間を適宜短絡することK
よって行なうようにしたものである。
The resistor according to the present invention has a plurality of linear adjustment electrodes arranged between opposing main electrodes, and a short-circuit between the main electrode and the adjustment electrode or between the adjustment electrode and the adjustment electrode. K to do
That's why I decided to do it.

〔発明の効果〕〔Effect of the invention〕

この発明によれば電極の短絡により抵抗値を調整する際
、トリミングの場合のように抵抗膜にマイクロフラッグ
の如も機械的な悪影響と及ぼすおそれが全くなくなるの
で、高精度でしかも低雑音特性の抵抗体を得ることが可
能となる。
According to this invention, when adjusting the resistance value by short-circuiting the electrodes, there is no risk of mechanically adverse effects such as micro-flags on the resistive film as in the case of trimming, so high accuracy and low noise characteristics can be achieved. It becomes possible to obtain a resistor.

〔発明の実施例〕[Embodiments of the invention]

第1図はこの発明の一実施例に係る抵抗体の平面図であ
る。1はアルミナセラミック等の耐熱性絶縁材料からな
る基板でおり、この基板1上に一定距離隔てて対向する
一対の主電極2a。
FIG. 1 is a plan view of a resistor according to an embodiment of the present invention. Reference numeral 1 denotes a substrate made of a heat-resistant insulating material such as alumina ceramic, and a pair of main electrodes 2a are placed on this substrate 1 and opposed to each other at a certain distance.

2bが形成され、さらにこれらの主電極21L。2b are formed, and further these main electrodes 21L.

2b間に複数の線状の調整用電極3が平行に配列形成さ
れている。そして、これらのfit 極2a 。
A plurality of linear adjustment electrodes 3 are arranged in parallel between 2b. And these fit pole 2a.

2b、3に接して抵抗膜4が形成さhでいる。A resistive film 4 is formed in contact with 2b and 3.

抵抗膜4は、前述したように比抵抗のレンジの点から厚
膜抵抗体が好ましい。厚膜抵抗体は通常がラス″1qが
上面に形成され、この上に電極ケ被着するのは困難であ
るので、図のように電1iE 2 a i 2 b 、
3を先に形成し、その上に抵抗膜4Iを形成している。
As described above, the resistive film 4 is preferably a thick film resistor from the viewpoint of the specific resistance range. Thick film resistors usually have a lath ``1q'' formed on the top surface, and it is difficult to deposit electrodes on this.
3 is formed first, and a resistive film 4I is formed thereon.

一方、抵抗膜4が厚膜抵抗体の場合、焼成の工程を必要
とするため、電極2g、2b、’3としても焼成可能な
薄膜であることが要求される。
On the other hand, if the resistive film 4 is a thick film resistor, a firing process is required, so that the electrodes 2g, 2b, '3 are also required to be thin films that can be fired.

焼成可能な薄電性薄膜としては、例えばT l /’N
 i /Au膜あるいはCr/Au膜等の積N膜を挙げ
ることができる。このような薄膜を用いれば、調整用電
極3を線幅、ピッチ共30 It程度といった微細な形
状にすることは容易である。
As a sinterable thin conductive thin film, for example, T l /'N
Examples include N-layer films such as an i/Au film or a Cr/Au film. If such a thin film is used, it is easy to form the adjustment electrode 3 into a fine shape with a line width and a pitch of about 30 It.

このように構成される抵抗体の抵抗値、っ1り主事1ヴ
2n、2b間の抵抗値をhj、”、′整するには、コT
、11°(、極2a、2bとそJしに+41>xする調
整用電体3との間、または調整用Tlj 4;メ3(・
)相方間を、ワイヤボンディジグ捷たは導r木ベー、ス
トのイ寸名により短絡してゆく。短絡数が多くなれば、
その分だけ↓I(l龜f114は減少してゆくので、’
 l’:l i票抵抗値に’?r したところで短絡作
業を止めh:i:、11−′に・、にに:1t4’度な
抵抗体を得ることができる。酸11整用?i〒せ、3の
糾3幅、ピッチを30μ程度とすhJf、、この抵抗1
1^を110%の公差におさめることは容易となる。
In order to adjust the resistance value of the resistor constructed in this way, the resistance value between 1v2n and 2b is as follows.
, 11° (, between the poles 2a, 2b and the adjusting electric body 3 which has +41>x, or the adjusting Tlj 4;
) Short-circuit between the partners using a wire bonding jig or a conductor base. If the number of short circuits increases,
↓I (l f114 decreases by that amount, so '
l': l i vote resistance value '? When the short-circuit operation is completed, the short-circuiting operation is stopped, and a resistor of h:i:, 11-', ni:1t4' can be obtained. Acid 11 repair? i, set the width of 3, the pitch of about 30μ, hJf,, this resistance 1
It becomes easy to keep 1^ within a tolerance of 110%.

しかも、このようにして調整さ)1九祇抗体は、抵抗膜
4の部分にクラ、りのよう々欠1’l?lが生じないた
め、低雑音となり、増幅回り等に最適である。
Moreover, the antibody adjusted in this way) is not completely exposed to the resistive film 4. Since l does not occur, the noise is low, making it ideal for amplification circuits, etc.

第2図はこの発明の他の実施例を示すもので、調整用電
極3の各々を38.3bの如く2分別した点が先の実施
例と異なっている。このようにすると、抵抗値の調整を
先の実施例の1/2のピッチ、つ′まり2倍の精度で行
なうことが可能となる。
FIG. 2 shows another embodiment of the present invention, which differs from the previous embodiment in that each of the adjustment electrodes 3 is divided into two parts as shown in 38.3b. In this way, it becomes possible to adjust the resistance value with a pitch that is half that of the previous embodiment, that is, with twice the accuracy.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実ノ孔例を示す平面図、身12し
1は他の実施例を示す平面図である。 1・・・基板、2 a 、 2 b =−主’t”;:
l、 僕、3 + 31 +3b・・・調整用% @ 
、  4−抵抗膜。
FIG. 1 is a plan view showing an example of a hole in the present invention, and body 12 is a plan view showing another embodiment. 1...Substrate, 2a, 2b=-main't'';:
l, I, 3 + 31 + 3b...% for adjustment @
, 4-Resistive film.

Claims (4)

【特許請求の範囲】[Claims] (1)対向した一対の主電極間に複数の線状の調整用電
極を配列形成すると共に、こizら主電極および調整用
電極に接して抵抗膜を形成し、前記主電極と調整用電極
との間または調整用電椿間を適宜短絡せしめて前記抵抗
膜の主′?ホ極間の抵抗値を調整して々ることを特徴と
する抵抗体。
(1) A plurality of linear adjustment electrodes are arranged and formed between a pair of opposing main electrodes, and a resistive film is formed in contact with the main electrode and the adjustment electrode, so that the main electrode and the adjustment electrode or between the adjustment electrodes as appropriate. A resistor characterized by adjusting the resistance value between poles.
(2)抵抗膜は厚膜抵抗体により形成されたものである
ことを特徴とする請求 項記載の抵抗体〇
(2) The resistor according to claim 0, wherein the resistive film is formed of a thick film resistor.
(3)  調整用電極はT + 7’FJ l/A u
膜、C r/A u膜等の焼成可能な薄膜によ多形成さ
れたものであることを特徴とする特許請求の範囲第1項
記載の抵抗体。
(3) The adjustment electrode is T + 7'FJ l/A u
2. The resistor according to claim 1, wherein the resistor is formed of a sinterable thin film such as a film or a Cr/Au film.
(4)調整用電極は各々分割形成されていることを特徴
とする特許請求の範囲第1項または第3項記載の抵抗体
(4) The resistor according to claim 1 or 3, wherein each of the adjustment electrodes is formed separately.
JP57170371A 1982-09-29 1982-09-29 Resistor Pending JPS5961001A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57170371A JPS5961001A (en) 1982-09-29 1982-09-29 Resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57170371A JPS5961001A (en) 1982-09-29 1982-09-29 Resistor

Publications (1)

Publication Number Publication Date
JPS5961001A true JPS5961001A (en) 1984-04-07

Family

ID=15903690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57170371A Pending JPS5961001A (en) 1982-09-29 1982-09-29 Resistor

Country Status (1)

Country Link
JP (1) JPS5961001A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63198302A (en) * 1987-02-13 1988-08-17 大省工業株式会社 Chip type semi-fixed resistor
JPH0563001U (en) * 1992-01-31 1993-08-20 安藤電気株式会社 Variable resistor for high frequency

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517625B2 (en) * 1972-09-02 1976-03-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517625B2 (en) * 1972-09-02 1976-03-09

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63198302A (en) * 1987-02-13 1988-08-17 大省工業株式会社 Chip type semi-fixed resistor
JPH0563001U (en) * 1992-01-31 1993-08-20 安藤電気株式会社 Variable resistor for high frequency

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