JPS5961001A - Resistor - Google Patents
ResistorInfo
- Publication number
- JPS5961001A JPS5961001A JP57170371A JP17037182A JPS5961001A JP S5961001 A JPS5961001 A JP S5961001A JP 57170371 A JP57170371 A JP 57170371A JP 17037182 A JP17037182 A JP 17037182A JP S5961001 A JPS5961001 A JP S5961001A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- film
- adjustment
- electrodes
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、抵抗値を高精度に調整可能とした抵抗体に
関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a resistor whose resistance value can be adjusted with high precision.
膜状抵抗体は薄膜抵抗体と厚膜抵抗体とに大別される。 Film resistors are broadly classified into thin film resistors and thick film resistors.
これらのうち、薄膜抵抗体は比抵抗のレンジが狭<1l
《Ω以下であるのに対し、厚膜抵抗体は比抵抗のレンジ
は1Ω程度から1 0mΩ。Among these, thin film resistors have a narrow range of resistivity <1l.
《In contrast, the specific resistance of thick film resistors ranges from about 1Ω to 10mΩ.
100mΩ稈度寸でと広い利点がある。しかしながら、
これらの抵抗体、特に厚膜抵抗体は仕上り精度が悪いた
め、トリミングをしないと抵抗値を±10%程度の公差
におさめることは困難であった。このようにトリミング
した抵抗体は、トリミング時のマイクロクラッf7等に
起因する雑音が発生し易く、高精度の微小電流増幅回路
等の用途には適さない。It has a wide range of advantages with a culm size of 100mΩ. however,
Since these resistors, especially thick film resistors, have poor finishing accuracy, it is difficult to keep the resistance value within a tolerance of about ±10% without trimming. A resistor trimmed in this manner is likely to generate noise due to microcracks f7 and the like during trimming, and is not suitable for applications such as high-precision microcurrent amplification circuits.
この発明の目的は、抵抗体膜にクラック等の悪影響を及
ぼすとと々く抵抗値を調整できる抵抗体を桿供すること
である。An object of the present invention is to provide a resistor whose resistance value can be adjusted as soon as the resistor film is affected by cracks or other adverse effects.
この発明に係る抵抗体は、対向したーヌ・[の主電極間
に複数の線状の調整用電極を配列形成す主電極と調整用
電極との間または調整用朗、罹間を適宜短絡することK
よって行なうようにしたものである。The resistor according to the present invention has a plurality of linear adjustment electrodes arranged between opposing main electrodes, and a short-circuit between the main electrode and the adjustment electrode or between the adjustment electrode and the adjustment electrode. K to do
That's why I decided to do it.
この発明によれば電極の短絡により抵抗値を調整する際
、トリミングの場合のように抵抗膜にマイクロフラッグ
の如も機械的な悪影響と及ぼすおそれが全くなくなるの
で、高精度でしかも低雑音特性の抵抗体を得ることが可
能となる。According to this invention, when adjusting the resistance value by short-circuiting the electrodes, there is no risk of mechanically adverse effects such as micro-flags on the resistive film as in the case of trimming, so high accuracy and low noise characteristics can be achieved. It becomes possible to obtain a resistor.
第1図はこの発明の一実施例に係る抵抗体の平面図であ
る。1はアルミナセラミック等の耐熱性絶縁材料からな
る基板でおり、この基板1上に一定距離隔てて対向する
一対の主電極2a。FIG. 1 is a plan view of a resistor according to an embodiment of the present invention. Reference numeral 1 denotes a substrate made of a heat-resistant insulating material such as alumina ceramic, and a pair of main electrodes 2a are placed on this substrate 1 and opposed to each other at a certain distance.
2bが形成され、さらにこれらの主電極21L。2b are formed, and further these main electrodes 21L.
2b間に複数の線状の調整用電極3が平行に配列形成さ
れている。そして、これらのfit 極2a 。A plurality of linear adjustment electrodes 3 are arranged in parallel between 2b. And these fit pole 2a.
2b、3に接して抵抗膜4が形成さhでいる。A resistive film 4 is formed in contact with 2b and 3.
抵抗膜4は、前述したように比抵抗のレンジの点から厚
膜抵抗体が好ましい。厚膜抵抗体は通常がラス″1qが
上面に形成され、この上に電極ケ被着するのは困難であ
るので、図のように電1iE 2 a i 2 b 、
3を先に形成し、その上に抵抗膜4Iを形成している。As described above, the resistive film 4 is preferably a thick film resistor from the viewpoint of the specific resistance range. Thick film resistors usually have a lath ``1q'' formed on the top surface, and it is difficult to deposit electrodes on this.
3 is formed first, and a resistive film 4I is formed thereon.
一方、抵抗膜4が厚膜抵抗体の場合、焼成の工程を必要
とするため、電極2g、2b、’3としても焼成可能な
薄膜であることが要求される。On the other hand, if the resistive film 4 is a thick film resistor, a firing process is required, so that the electrodes 2g, 2b, '3 are also required to be thin films that can be fired.
焼成可能な薄電性薄膜としては、例えばT l /’N
i /Au膜あるいはCr/Au膜等の積N膜を挙げ
ることができる。このような薄膜を用いれば、調整用電
極3を線幅、ピッチ共30 It程度といった微細な形
状にすることは容易である。As a sinterable thin conductive thin film, for example, T l /'N
Examples include N-layer films such as an i/Au film or a Cr/Au film. If such a thin film is used, it is easy to form the adjustment electrode 3 into a fine shape with a line width and a pitch of about 30 It.
このように構成される抵抗体の抵抗値、っ1り主事1ヴ
2n、2b間の抵抗値をhj、”、′整するには、コT
、11°(、極2a、2bとそJしに+41>xする調
整用電体3との間、または調整用Tlj 4;メ3(・
)相方間を、ワイヤボンディジグ捷たは導r木ベー、ス
トのイ寸名により短絡してゆく。短絡数が多くなれば、
その分だけ↓I(l龜f114は減少してゆくので、’
l’:l i票抵抗値に’?r したところで短絡作
業を止めh:i:、11−′に・、にに:1t4’度な
抵抗体を得ることができる。酸11整用?i〒せ、3の
糾3幅、ピッチを30μ程度とすhJf、、この抵抗1
1^を110%の公差におさめることは容易となる。In order to adjust the resistance value of the resistor constructed in this way, the resistance value between 1v2n and 2b is as follows.
, 11° (, between the poles 2a, 2b and the adjusting electric body 3 which has +41>x, or the adjusting Tlj 4;
) Short-circuit between the partners using a wire bonding jig or a conductor base. If the number of short circuits increases,
↓I (l f114 decreases by that amount, so '
l': l i vote resistance value '? When the short-circuit operation is completed, the short-circuiting operation is stopped, and a resistor of h:i:, 11-', ni:1t4' can be obtained. Acid 11 repair? i, set the width of 3, the pitch of about 30μ, hJf,, this resistance 1
It becomes easy to keep 1^ within a tolerance of 110%.
しかも、このようにして調整さ)1九祇抗体は、抵抗膜
4の部分にクラ、りのよう々欠1’l?lが生じないた
め、低雑音となり、増幅回り等に最適である。Moreover, the antibody adjusted in this way) is not completely exposed to the resistive film 4. Since l does not occur, the noise is low, making it ideal for amplification circuits, etc.
第2図はこの発明の他の実施例を示すもので、調整用電
極3の各々を38.3bの如く2分別した点が先の実施
例と異なっている。このようにすると、抵抗値の調整を
先の実施例の1/2のピッチ、つ′まり2倍の精度で行
なうことが可能となる。FIG. 2 shows another embodiment of the present invention, which differs from the previous embodiment in that each of the adjustment electrodes 3 is divided into two parts as shown in 38.3b. In this way, it becomes possible to adjust the resistance value with a pitch that is half that of the previous embodiment, that is, with twice the accuracy.
第1図はこの発明の一実ノ孔例を示す平面図、身12し
1は他の実施例を示す平面図である。
1・・・基板、2 a 、 2 b =−主’t”;:
l、 僕、3 + 31 +3b・・・調整用% @
、 4−抵抗膜。FIG. 1 is a plan view showing an example of a hole in the present invention, and body 12 is a plan view showing another embodiment. 1...Substrate, 2a, 2b=-main't'';:
l, I, 3 + 31 + 3b...% for adjustment @
, 4-Resistive film.
Claims (4)
極を配列形成すると共に、こizら主電極および調整用
電極に接して抵抗膜を形成し、前記主電極と調整用電極
との間または調整用電椿間を適宜短絡せしめて前記抵抗
膜の主′?ホ極間の抵抗値を調整して々ることを特徴と
する抵抗体。(1) A plurality of linear adjustment electrodes are arranged and formed between a pair of opposing main electrodes, and a resistive film is formed in contact with the main electrode and the adjustment electrode, so that the main electrode and the adjustment electrode or between the adjustment electrodes as appropriate. A resistor characterized by adjusting the resistance value between poles.
ことを特徴とする請求 項記載の抵抗体〇(2) The resistor according to claim 0, wherein the resistive film is formed of a thick film resistor.
膜、C r/A u膜等の焼成可能な薄膜によ多形成さ
れたものであることを特徴とする特許請求の範囲第1項
記載の抵抗体。(3) The adjustment electrode is T + 7'FJ l/A u
2. The resistor according to claim 1, wherein the resistor is formed of a sinterable thin film such as a film or a Cr/Au film.
とする特許請求の範囲第1項または第3項記載の抵抗体
。(4) The resistor according to claim 1 or 3, wherein each of the adjustment electrodes is formed separately.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57170371A JPS5961001A (en) | 1982-09-29 | 1982-09-29 | Resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57170371A JPS5961001A (en) | 1982-09-29 | 1982-09-29 | Resistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5961001A true JPS5961001A (en) | 1984-04-07 |
Family
ID=15903690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57170371A Pending JPS5961001A (en) | 1982-09-29 | 1982-09-29 | Resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5961001A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63198302A (en) * | 1987-02-13 | 1988-08-17 | 大省工業株式会社 | Chip type semi-fixed resistor |
JPH0563001U (en) * | 1992-01-31 | 1993-08-20 | 安藤電気株式会社 | Variable resistor for high frequency |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS517625B2 (en) * | 1972-09-02 | 1976-03-09 |
-
1982
- 1982-09-29 JP JP57170371A patent/JPS5961001A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS517625B2 (en) * | 1972-09-02 | 1976-03-09 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63198302A (en) * | 1987-02-13 | 1988-08-17 | 大省工業株式会社 | Chip type semi-fixed resistor |
JPH0563001U (en) * | 1992-01-31 | 1993-08-20 | 安藤電気株式会社 | Variable resistor for high frequency |
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