JPS5955085A - 半導体発光装置 - Google Patents

半導体発光装置

Info

Publication number
JPS5955085A
JPS5955085A JP16611882A JP16611882A JPS5955085A JP S5955085 A JPS5955085 A JP S5955085A JP 16611882 A JP16611882 A JP 16611882A JP 16611882 A JP16611882 A JP 16611882A JP S5955085 A JPS5955085 A JP S5955085A
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor
semiconductor layer
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16611882A
Other languages
English (en)
Japanese (ja)
Other versions
JPS641074B2 (enExample
Inventor
Haruhiko Tabuchi
晴彦 田淵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16611882A priority Critical patent/JPS5955085A/ja
Publication of JPS5955085A publication Critical patent/JPS5955085A/ja
Publication of JPS641074B2 publication Critical patent/JPS641074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)
JP16611882A 1982-09-24 1982-09-24 半導体発光装置 Granted JPS5955085A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16611882A JPS5955085A (ja) 1982-09-24 1982-09-24 半導体発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16611882A JPS5955085A (ja) 1982-09-24 1982-09-24 半導体発光装置

Publications (2)

Publication Number Publication Date
JPS5955085A true JPS5955085A (ja) 1984-03-29
JPS641074B2 JPS641074B2 (enExample) 1989-01-10

Family

ID=15825359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16611882A Granted JPS5955085A (ja) 1982-09-24 1982-09-24 半導体発光装置

Country Status (1)

Country Link
JP (1) JPS5955085A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61100988A (ja) * 1984-10-22 1986-05-19 Nec Corp 半導体レ−ザ
US5107311A (en) * 1989-08-02 1992-04-21 Canon Kabushiki Kaisha Semiconductor light-emitting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290280A (en) * 1976-01-22 1977-07-29 Nec Corp Semiconductor laser element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290280A (en) * 1976-01-22 1977-07-29 Nec Corp Semiconductor laser element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61100988A (ja) * 1984-10-22 1986-05-19 Nec Corp 半導体レ−ザ
US5107311A (en) * 1989-08-02 1992-04-21 Canon Kabushiki Kaisha Semiconductor light-emitting device

Also Published As

Publication number Publication date
JPS641074B2 (enExample) 1989-01-10

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