JPS5952824B2 - Photosensitive composition processing method - Google Patents
Photosensitive composition processing methodInfo
- Publication number
- JPS5952824B2 JPS5952824B2 JP4995177A JP4995177A JPS5952824B2 JP S5952824 B2 JPS5952824 B2 JP S5952824B2 JP 4995177 A JP4995177 A JP 4995177A JP 4995177 A JP4995177 A JP 4995177A JP S5952824 B2 JPS5952824 B2 JP S5952824B2
- Authority
- JP
- Japan
- Prior art keywords
- positive type
- photosensitive composition
- added
- processing method
- softening point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
【発明の詳細な説明】
本発明は高い軟化点をもつポジタイプの感光性（ＣＨ３
Ｏ）３Ｓ１ＣＨ２ＣＨ２ＣＨ２Ｎ−ＣＨ２Ｃ゛ ＣＨ２
Ｃ組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides positive type photosensitivity (CH3
O) 3S1CH2CH2CH2N-CH2C゛ CH2
This relates to composition C.
半導体工業においては、たとえばＩＣ、、ＬＳＩなどの
製造工程においてはメタルマスクの製作およびアルミニ
ウム配線工程のフォトエッチングの際、ポジタイプの感
光性組成物（以下、ポジタイプホトレジスト）を使用す
る。In the semiconductor industry, for example, positive type photosensitive compositions (hereinafter referred to as positive type photoresists) are used in the production of metal masks and photoetching in aluminum wiring processes in the manufacturing process of ICs, LSIs, etc.
従来のポジタイプホトレジストは、たとえばフェノール
樹脂またはノボラック系樹脂とジアジドとの２成分から
構成されている。Conventional positive type photoresists are composed of two components, for example, phenol resin or novolac resin and diazide.
しかしながら、このようなポジタイプホトレジストにお
いては、これを構成するフェノール樹脂（Ｐｈｅｎｏｌ
ｒｅｓｌｎ）またはノボラック系樹脂のもつ化学構造か
ら、軟化点が１２０℃程度と低いために、たとえばプラ
ズマエッチングやスパッタエッチングのマスク材として
使用した場合、処理条件によつて多少差がでるが１２０
℃以上になることが多く、したがつて基板処理用のマス
ク材として充分に働きができなかつた。本発明はこのよ
うな従来のポジタイプホトレジストの不都合を解消し、
処理温度に対応できる程度の高い軟化点をもつようなポ
ジタイプホトレジストを提供するにある。However, in such positive type photoresists, the phenolic resin (Phenol
Due to the chemical structure of novolac resins, the softening point is as low as 120°C, so when used as a mask material for plasma etching or sputter etching, for example, it differs slightly depending on the processing conditions.
℃ or higher, and therefore could not function satisfactorily as a mask material for substrate processing. The present invention solves these disadvantages of conventional positive type photoresists,
It is an object of the present invention to provide a positive type photoresist having a softening point high enough to cope with processing temperatures.
このような目的を達成するための本発明の要旨は、ポジ
タイプホトレジストの１構成物であるフェノールまたは
ノボラックと反応する第３物質としての有機シリコン化
合物をポジタイプホトレジストに添加したことを特徴と
する。The gist of the present invention to achieve such an object is characterized in that an organic silicon compound is added to a positive type photoresist as a third substance that reacts with phenol or novolak, which is one of the constituents of the positive type photoresist. .
以下、本発明の一実施例を説明する。An embodiment of the present invention will be described below.
まず、フェノール樹脂またはノボラック系樹脂から構成
されるポジタイプホトレジスト材料に添加する第３物質
すなわち有機シリコン化合物は、アミノシランＮ（ＣＨ
２ＣＨＣＨ２０ＣＨ２
Ｓｌ（ＯＣＨ３）３）２
、ＯＣＨ２ＣＨ２ＣＨ２Ｓｌ（ＯＣＨ３）３を１９％含
んだトルエン溶液としている。First, the third substance, that is, the organic silicon compound added to the positive type photoresist material composed of phenolic resin or novolac resin, is aminosilane N (CH
It is a toluene solution containing 19% of 2CHCH20CH2 Sl(OCH3)3)2 and OCH2CH2CH2Sl(OCH3)3.
また、このアミノシランのホトレジスト材料への添加量
は、ベースとなるホトレジスト材料の固形物含有量（た
だし乾燥状態で）の３％（重量）〜１５％（重量）とす
る。The amount of aminosilane added to the photoresist material is 3% (by weight) to 15% (by weight) of the solid content (in dry state) of the base photoresist material.
ところで、該ポジタイプホトレジスト材料は、樹脂固形
物含有率が、たとえば３３％のホトレジスト材料である
。By the way, the positive type photoresist material has a resin solid content of, for example, 33%.
つぎに、アミノシラン（ＡｍｉｎＯｓｉｌａｎ′Ｘ）：
）添加量と軟化点との関係を示せば、だいたい次の通り
となる。Next, aminosilane (AminOsilan'X):
) The relationship between the amount added and the softening point is roughly as follows.
この変化状態をグラフで表せば図のようになる。This state of change can be expressed graphically as shown in the figure.
ただし、グラフの縦軸には軟化点ＣＯを、横軸にはアミ
ノシラン添加量（４）をとつている。さらに、４は急激
に加熱した場合の曲線で、８は１００℃より徐々に加熱
した場合の曲線である。However, the vertical axis of the graph shows the softening point CO, and the horizontal axis shows the amount of aminosilane added (4). Further, 4 is a curve when heated rapidly, and 8 is a curve when heated gradually from 100°C.
前述したことからも分るように、低温（１００℃）より
徐々に温度をあげて行けば、急激に温度をあげた場合よ
りもさらに軟化点ＣＯは向上する。なお、前記実施例に
おいては、第３物質としての有機シリコン化合物をアミ
ノシランをつかつているが、これにかえてアミノシラン
Ｈ，ＮＣ，Ｈ６Ｓｉ（０Ｃ，Ｈ，），またはＨ，ＮＣ，
Ｈ４ＮＨＣ，Ｈ，Ｓｉ（０ＣＨ３）２をつかつて幽もよ
い。As can be seen from the above, if the temperature is gradually raised from a low temperature (100° C.), the softening point CO will be further improved than if the temperature is suddenly raised. In the above examples, aminosilane is used as the organosilicon compound as the third substance, but aminosilane H, NC, H6Si (0C, H,) or H, NC,
H4NHC,H,Si(0CH3)2 can also be used.
さらに、該アミノシランに代るエポキシシラン（ＥｐＯ
ｘｙｓｉｌａｎ）をつかつてもよい。Furthermore, epoxysilane (EpO
xysilan) may also be used.
以上の説明から明らかなよりに本発明によれば、フエノ
ール樹脂またはノポラツク樹脂とジアジドで構成される
感光性組成物（ポジタイプホトレジスト）に、第３物質
として該樹脂よりも高い軟化点をもちかつ該樹脂と反応
するような有機シリコン化合物を添加していることから
、これによつて得られる生成物は該有機シリコン化合物
に近い軟化点をもつことになる。As is clear from the above description, according to the present invention, a photosensitive composition (positive type photoresist) composed of a phenolic resin or a noporac resin and diazide is added as a third substance to a photosensitive composition having a softening point higher than that of the resin. Since an organosilicon compound that reacts with the resin is added, the resulting product has a softening point close to that of the organosilicon compound.
したがつて、この有機シリコン化合物を添加した感光性
組成物（ポジタイプホトレジスト）は当然、その軟化点
が、添加していない従来の感光性組成物（ポジタイプホ
トレジスト）よりも高い軟化点をもつようになる。Therefore, a photosensitive composition (positive type photoresist) to which this organosilicon compound is added naturally has a higher softening point than a conventional photosensitive composition (positive type photoresist) to which this organic silicon compound is not added. It becomes like this.
だからブラズマエツチングやスパツタエツチングのマス
ク材として使用したような場合でも、たとえば基板処理
用のマスク材として充分な働きをする。Therefore, even when used as a mask material for plasma etching or sputter etching, it works satisfactorily as a mask material for substrate processing, for example.
図は本発明の一実施例を示したアミノシラン添加量と軟
化点の関係を示すグラフである。
Ａ・・・・・・急熱した場合に表れる曲線、Ｂ・・・・
・・１００℃より徐々に加熱した場合に表れる曲線。The figure is a graph showing the relationship between the amount of added aminosilane and the softening point, showing an example of the present invention. A...Curve that appears when the temperature rises rapidly, B...
...Curve that appears when heating gradually from 100℃.
Claims (1)
ポジ型フォトレジストにアミノシラン又はエポキシシラ
ンを添加する工程（ｂ）上記工程の後、半導体ウェーハ
上に上記フォトレジストを塗布する工程（ｃ）上記工程
の後、上記フォトレジストを所望のパターンに形成する
工程（ｄ）上記工程の後、上記フォトレジストをマスク
として、上記ウェーハを１２０℃以上の温度において蝕
刻処理する工程よりなる感光性組成物処理方法。1 (a) Step of adding aminosilane or epoxysilane to a positive photoresist consisting of two components of phenol resin and diazide (b) Step of applying the above photoresist onto a semiconductor wafer after the above step (c) Step of above step (d) After the step, using the photoresist as a mask, the wafer is etched at a temperature of 120° C. or higher. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4995177A JPS5952824B2 (en) | 1977-05-02 | 1977-05-02 | Photosensitive composition processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4995177A JPS5952824B2 (en) | 1977-05-02 | 1977-05-02 | Photosensitive composition processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53135621A JPS53135621A (en) | 1978-11-27 |
| JPS5952824B2 true JPS5952824B2 (en) | 1984-12-21 |
Family
ID=12845334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4995177A Expired JPS5952824B2 (en) | 1977-05-02 | 1977-05-02 | Photosensitive composition processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5952824B2 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5741636A (en) * | 1980-08-27 | 1982-03-08 | Toshiba Corp | Photoresist composition |
| JPS57157241A (en) * | 1981-03-25 | 1982-09-28 | Oki Electric Ind Co Ltd | Formation of resist material and its pattern |
| JPS57211143A (en) * | 1981-06-23 | 1982-12-24 | Oki Electric Ind Co Ltd | Formation of micropattern |
| JPS5891632A (en) * | 1981-11-27 | 1983-05-31 | Oki Electric Ind Co Ltd | Formation of microscopic pattern |
| JPS59152A (en) * | 1982-06-25 | 1984-01-05 | Hitachi Chem Co Ltd | Image forming resin composition |
| DE3473359D1 (en) * | 1983-06-29 | 1988-09-15 | Fuji Photo Film Co Ltd | PHOTOSOLUBILIZABLE COMPOSITION |
| JPS6043651A (en) * | 1983-08-19 | 1985-03-08 | Matsushita Electric Ind Co Ltd | Plasma-resistant resist |
| JPS61144644A (en) * | 1984-12-19 | 1986-07-02 | Japan Synthetic Rubber Co Ltd | Posi-type radiation sensitive resin composition |
| JPH0650393B2 (en) * | 1985-07-30 | 1994-06-29 | 日本合成ゴム株式会社 | Positive-type radiation-sensitive composition |
| DE3810247A1 (en) * | 1987-03-26 | 1988-10-06 | Toshiba Kawasaki Kk | LIGHT SENSITIVE COATING |
| ES2061954T3 (en) * | 1988-11-28 | 1994-12-16 | Unilever Nv | AMINO ALKYL SILICONES MODIFIED WITH HYDROXYL HYDROCARBYL. |
| US5078988A (en) * | 1988-11-28 | 1992-01-07 | Chesebrough-Pond's Usa Co., Division Of Conopco, Inc. | Dentrifrices including modified aminoalkyl silicones |
| US6506921B1 (en) * | 2001-06-29 | 2003-01-14 | Virginia Tech Intellectual Properties, Inc. | Amine compounds and curable compositions derived therefrom |
| KR101505720B1 (en) * | 2012-03-30 | 2015-03-25 | 주식회사 엘지화학 | Siloxane-based compound, photosensitive composition comprising the same and photosensitive material |
-
1977
- 1977-05-02 JP JP4995177A patent/JPS5952824B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53135621A (en) | 1978-11-27 |
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