JPS5951448A - イオン打込用回転円板の冷却機構 - Google Patents

イオン打込用回転円板の冷却機構

Info

Publication number
JPS5951448A
JPS5951448A JP57084189A JP8418982A JPS5951448A JP S5951448 A JPS5951448 A JP S5951448A JP 57084189 A JP57084189 A JP 57084189A JP 8418982 A JP8418982 A JP 8418982A JP S5951448 A JPS5951448 A JP S5951448A
Authority
JP
Japan
Prior art keywords
stainless steel
aluminum
rotating disk
rotary disc
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57084189A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0359543B2 (enExample
Inventor
Toshimichi Taya
田谷　俊陸
Eiji Myochin
明珍　英次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57084189A priority Critical patent/JPS5951448A/ja
Publication of JPS5951448A publication Critical patent/JPS5951448A/ja
Publication of JPH0359543B2 publication Critical patent/JPH0359543B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
JP57084189A 1982-05-18 1982-05-18 イオン打込用回転円板の冷却機構 Granted JPS5951448A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57084189A JPS5951448A (ja) 1982-05-18 1982-05-18 イオン打込用回転円板の冷却機構

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57084189A JPS5951448A (ja) 1982-05-18 1982-05-18 イオン打込用回転円板の冷却機構

Publications (2)

Publication Number Publication Date
JPS5951448A true JPS5951448A (ja) 1984-03-24
JPH0359543B2 JPH0359543B2 (enExample) 1991-09-10

Family

ID=13823521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57084189A Granted JPS5951448A (ja) 1982-05-18 1982-05-18 イオン打込用回転円板の冷却機構

Country Status (1)

Country Link
JP (1) JPS5951448A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP2794499B2 (ja) 1991-03-26 1998-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2845303B2 (ja) 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法

Also Published As

Publication number Publication date
JPH0359543B2 (enExample) 1991-09-10

Similar Documents

Publication Publication Date Title
US10763153B2 (en) Holding apparatus
US6881305B2 (en) Heated and cooled vacuum chamber shield
US6863736B2 (en) Shaft cooling mechanisms
KR20070091206A (ko) 반도체 웨이퍼 종형 열처리장치용 자성 유체 시일 유닛
JPS5951448A (ja) イオン打込用回転円板の冷却機構
US10600609B2 (en) High-power X-ray sources and methods of operation
JP4600025B2 (ja) コーティング装置
JPWO2020090164A1 (ja) 真空処理装置
JPWO2020090163A1 (ja) 真空処理装置
KR102597416B1 (ko) 진공 처리 장치
JP2003288854A (ja) ガリウム分路を備えたグリース軸受
JP4413567B2 (ja) 成膜装置及び成膜方法
JPH0329863B2 (enExample)
JP2000169962A (ja) スパッタリング装置および水冷カソード
CN115505889A (zh) 一种超高真空磁控溅射靶以及磁控溅射装置
KR100196911B1 (ko) 스퍼터링 챔버의 웨이퍼 냉각장치
JP2000188265A (ja) スパッタリング装置およびスパッタリング方法
JP2001068427A (ja) 基板冷却装置
JPH02301558A (ja) スパッタ装置
US20230138552A1 (en) Cathode unit for magnetron sputtering apparatus and magnetron sputtering apparatus
JPS59165359A (ja) イオン打込装置
US5722870A (en) System and method for manufacturing x-ray tubes having glass envelopes
JPS6383263A (ja) スパツタリング装置
JPH0752071B2 (ja) 真空熱処理炉
JP4010391B2 (ja) Ｘ線管ターゲット