JPS5948952A - Manufacture of resistor - Google Patents

Abstract

PURPOSE:To facilitate the control of resistance value of the titled resistor by a method wherein a neutral element is ion-implanted into a semiconductor layer together with an impurity element, thereby enabling to make the semiconductor layer amorphous. CONSTITUTION:A polycrystalline Si is deposited on a thermal oxide film, P ions are implanted thereon, and the Si ions are implanted. Subsequently, an annealing is performed in an N2 atmosphere. The polycrystalline Si is made amorphous by the implatation of Si ions, and a sheet resistor is changed into a gentle linear form within the range of 10<14>-2X10<15>cm<-2> of the quantity of P<+> implantation. Also, the sheet resistance is stabilized with the quantity of implantation of 2X10<15>cm<-2> or above, and the resistance value can be controlled very easily. Besides, the order of implantation is not specially limited, but it is better that neutral element ions (Si<+>, Ge and the like) are implanted first in view of the channelling when impurities are ion-implanted. As<+>, B<+>, BF2<+> or the like may be used as an impurity element.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a resistor, and particularly to a method for manufacturing a resistor with excellent one-ζ control 111 for MS integrated circuits and bipolar integrated circuits.

BACKGROUND TECHNOLOGY AND PROBLEMS As the density and speed of semiconductor integrated circuits have increased, research has been conducted into the production of integrated circuit elements having a multilayer structure.

For example, instead of the diffused resistor built into the semiconductor 1 of the IIL, a polycrystalline silicon layer is deposited on an insulating film such as S10211, S, or 13N41, and ions are implanted into this polycrystalline silicon layer. One such technique is to form a resistor by removing impurities using a method such as a method. The technology for forming such a polycrystalline silicon resistor not only makes it possible to increase the resistance value as a multilayer structure, but also to increase the resistance value. 11 with good linearity independent of the
It is possible to form a resistor in a small area! It has one length. While doing so, FJT and Tohoku's products were manufactured using polycrystalline silicon resistors II (CVIJ).
The deposition of polycrystalline silicon by the ``vapor phase epitaxy'' method also causes the instability of the formed striations 41+ in ``JIL''l.
1) There is a heat treatment after the impurity is imaged/implanted.
To person impurity/ili M turned into I! In the meantime, the resistance value was clearly 9 points.

Is this deposited polycrystalline silicon I? '+tI>t
￥AQ B 1 In addition to the fluctuation, such polycrystalline silicon,, l
Resistor 1〕〕〕〕〕〕
Best introduction to L-S 1. 11 pieces were put into the culm, and it was
C is 115 degrees (1.8 degrees), 'i-(7)
Low temperature treatment (/
This may be due to the fact that the process is carried out at a temperature that is just above 100%.

Purpose of the Invention In view of the above-mentioned points, the present invention is capable of setting 11L resistance 11°1 with control 1'l and ensuring a stable resistor.
．． The present invention provides a method for manufacturing a resistor that can be easily manufactured.

SUMMARY OF THE INVENTION The present invention provides for the if'+J'4 on the -'' plane of a semiconductor substrate.
1 culm ``forming a conductor layer'' on 1H and this sapling body j
This is a method for manufacturing a resistor, which includes a step of adding 41,761 I11 elements to the semiconductor layer, and a step of ion-implanting an impurity element into the semiconductor layer. Gogo ζ, middle (It 几 element is -”
l'; an element that is electrically neutral to the JI conductor layer (Zunawa');
means. In this way, each time a neutral element is ion-implanted into the semiconductor layer together with an impurity element, the semiconductor layer becomes amorphous, and the resistance value of the resistor (11) can be easily controlled. .

Example Hereinafter, a practical example of the present invention will be described.

In the present invention, for example, the insulating layer 1-
A polycrystalline silicon layer, which is to become a resistor, is formed as a semiconductor layer jH.
In the silicon semiconductor thin layer of this example, number: I part 1'
Conductor 1~ Si or the same C+ e which is a constituent element of the layer
4y 4onl One person makes a semiconductor thin layer amorphous
Impurities that become 1-torino'- after ingestion (for example, phosphorus, arsenic, boron Z'';) ~5:41761 people, but r,
11 resistors are formed by annealing.

FIG. 1 shows an embodiment of the present invention in accordance with the prior art.
b' The change in C resistance with respect to the implantation P of impurity ions (phosphorus ions) when compared with the C body is small J''N11
1 1.

For test 1!1, 5,000 to 6,000 people will be loyal)
100 that should become a resistance body to 1 phrase 11Q (S mountain))
0 polycrystalline silicone deposited 1/j, 40K
eV phosphorus ion (+)4') I x 10'''
cm-' ~2 x 1015am1015a was used as the sample of the prior art, and a sample of the present invention was prepared by increasing the amount of a constituent element (a certain silica ion (St)). − Yes, post-annealing treatment −
・1 (1) in a nitrogen atmosphere using an electric d7i
2+l with fl O"c (in the figure, the L" mark indicates Si4 by t10); This is the case.

40KeV phosphorus ion implantation dose is 2X IQ15cm
-', the polycrystalline silicon layer of 1000 people is not completely amorphized, and of course] Q"'cm-'lowerID', ?, L people, the amorphization becomes even more 4Eζ
It's a good thing. and the annealing characteristics of the polycrystalline silicon layer implanted with phosphorous ions (i.e., the sheet 11
1ura'C) has a CI+5 due to the degree of amorphization, and as shown by the mark in Figure 1, the sheet resistance after annealing is extremely high at 7MΩ/l. Moreover, as the amount of phosphorus ion implanted increases, the sheet resistivity value sharply decreases. This, in turn, may impede the future technology in that it is advantageous to control the high resistance.

On the other hand, in the case of the present invention in which silicon ions are further implanted into the polycrystalline silicon layer, the polycrystalline silicon layer becomes sufficiently amorphous by the silicon ion implantation, as shown in FIG. As shown in the mark, the sheet resistance decreases linearly and relatively slowly in the range of phosphorus ion implantation amount from 101' to 2 x 10''cm-', and the resistance value is extremely controlled: I'i' Wa, de S,'.

I understand.

FIG. 2 shows an embodiment of the present invention (forming conditions similar to those in FIG. 1).
and I x 10110l5' implanted - each polycrystalline silicon, :t 7M c, : , :1 silicon ion r
The relationship between the corporation h and the sheet 111 is ζ'b'i f'l 1. 1. l
111 is the one injected with phosphorus ion l x 10"cm-'n, the mark is the one injected with phosphorus ion l x 10110l5', and the sheet of both sets of antibodies ill; The j value is lII\1 of silicon ion
The structure is 'l The above is desirable.

In addition, amorphous neutral elements and ions (Si", Ge, etc. in the example) and pure nine ions (1) +,
5 injections 11 of As+, B'', Bl'2''S'i')
Isn't the 0 order limited to zl and 1?When implanting impurity ions, considering the prevention of tunneling, etc., first put the ions into a neutral tank, and then put the ions into a neutral tank. Crystallization
In addition, neutral element ions (Si+,
As for the conditions for Ge 11, etc., when the thickness of the polycrystalline silicon semiconductor layer is 1, ions are implanted twice with an energy such that the implantation range (Rp) is [and t/2].
ζIt is also good to make the semiconductor layer completely amorphous.

Also, on the upper side, electric furnace annealing (20 minutes at 1000°C in a nitrogen atmosphere) was used for the heat treatment of the polycrystalline silicon layer. It is better to process at a high temperature such as , 1200° C. to obtain a low-resistance layer with low resistance. However, in practice, it is necessary to prevent the movement, redistribution, etc. of the already formed junctions.
There are also difficulties in processing at such high temperatures. Therefore, in order to solve this problem, if an instantaneous heating method using infrared irradiation is adopted during annealing, a more stable Jlli antibody can be obtained without causing movement or redistribution of the bond.

Further, although the upper part is applied to the formation of a resistor using a silicon semiconductor as a semiconductor layer, the present invention is not limited to this, but can also be applied to the formation of a resistor using a general semiconductor 1rf such as germanium or a compound semiconductor.

Effects of the Invention - As mentioned above, according to the present invention, ions are implanted into the 5I body 1, 1 element is impurity element and 1 is ion implanted into the resistor. The +It and b' values can be easily controlled and a stable resistor can be obtained.

Therefore, M('JS integrated circuit, bipolar 4(S treetop circuit 1
It is suitable for application to the formation of a resistor in which S, 11 is inserted into a semiconductor integrated circuit such as i'R.

[Brief explanation of the drawing]

Figure 1 is a characteristic diagram showing the change in sheet resistance of a resistor IiL body depending on the amount of phosphorus ion implanted. Figure 2 shows the sheet resistance of +1L antibody depending on the amount of silicon ion implanted. =
4A: is a characteristic diagram in which changes in were measured. Same pine 111tl Hide', ljto,
I', :j Mi [, II Fig. 1 Phosphorus ion implantation amount (ions/cm2) Fig. 2

Claims (1)

[Claims] A step of forming a semiconductor layer on the insulating layer F on the whole surface of the semiconductor X root, a step of implanting ions into the semiconductor layer, and a step of implanting ions into the semiconductor layer A method for manufacturing a resistor that involves the process of ion-implanting pure 1t.