JPS5947477B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPS5947477B2
JPS5947477B2 JP49061030A JP6103074A JPS5947477B2 JP S5947477 B2 JPS5947477 B2 JP S5947477B2 JP 49061030 A JP49061030 A JP 49061030A JP 6103074 A JP6103074 A JP 6103074A JP S5947477 B2 JPS5947477 B2 JP S5947477B2
Authority
JP
Japan
Prior art keywords
layer
charge
semiconductor
wafer
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49061030A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5023186A (enExample
Inventor
スタツズ ハ−マン
マ−チン フエイスト ウオルフガング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of JPS5023186A publication Critical patent/JPS5023186A/ja
Publication of JPS5947477B2 publication Critical patent/JPS5947477B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP49061030A 1973-06-01 1974-05-31 半導体装置およびその製造方法 Expired JPS5947477B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36592773A 1973-06-01 1973-06-01
US365927 1973-06-01

Publications (2)

Publication Number Publication Date
JPS5023186A JPS5023186A (enExample) 1975-03-12
JPS5947477B2 true JPS5947477B2 (ja) 1984-11-19

Family

ID=23440967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49061030A Expired JPS5947477B2 (ja) 1973-06-01 1974-05-31 半導体装置およびその製造方法

Country Status (10)

Country Link
JP (1) JPS5947477B2 (enExample)
BE (1) BE815700A (enExample)
CA (1) CA1025034A (enExample)
CH (2) CH581905A5 (enExample)
DE (1) DE2424908A1 (enExample)
FR (1) FR2232090B1 (enExample)
GB (2) GB1477362A (enExample)
IT (1) IT1013259B (enExample)
NL (1) NL7406513A (enExample)
SE (1) SE7406830L (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220127933A (ko) * 2021-01-27 2022-09-20 히다치 겡키 가부시키 가이샤 유압 셔블

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704635A (en) * 1984-12-18 1987-11-03 Sol Nudelman Large capacity, large area video imaging sensor
JP7313269B2 (ja) * 2019-12-23 2023-07-24 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL297002A (enExample) * 1962-08-23 1900-01-01
FR1449089A (fr) * 1964-07-09 1966-08-12 Rca Corp Dispositifs semi-conducteurs
US3523208A (en) * 1968-05-27 1970-08-04 Bell Telephone Labor Inc Image converter
FR2024513A1 (enExample) * 1968-11-29 1970-08-28 Rca Corp
US3670198A (en) * 1969-09-30 1972-06-13 Sprague Electric Co Solid-state vidicon structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220127933A (ko) * 2021-01-27 2022-09-20 히다치 겡키 가부시키 가이샤 유압 셔블

Also Published As

Publication number Publication date
CH581391A5 (enExample) 1976-10-29
AU6835574A (en) 1975-10-30
GB1477362A (en) 1977-06-22
BE815700A (fr) 1974-09-16
FR2232090B1 (enExample) 1979-02-16
FR2232090A1 (enExample) 1974-12-27
DE2424908C2 (enExample) 1988-10-27
NL7406513A (enExample) 1974-12-03
IT1013259B (it) 1977-03-30
DE2424908A1 (de) 1974-12-19
SE7406830L (enExample) 1974-12-02
CA1025034A (en) 1978-01-24
CH581905A5 (enExample) 1976-11-15
GB1477361A (en) 1977-06-22
JPS5023186A (enExample) 1975-03-12

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