GB1477362A - Field effect transistors - Google Patents

Field effect transistors

Info

Publication number
GB1477362A
GB1477362A GB5055376A GB5055376A GB1477362A GB 1477362 A GB1477362 A GB 1477362A GB 5055376 A GB5055376 A GB 5055376A GB 5055376 A GB5055376 A GB 5055376A GB 1477362 A GB1477362 A GB 1477362A
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistors
gate insulation
charges
raytheon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5055376A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB1477362A publication Critical patent/GB1477362A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB5055376A 1973-06-01 1974-05-31 Field effect transistors Expired GB1477362A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36592773A 1973-06-01 1973-06-01

Publications (1)

Publication Number Publication Date
GB1477362A true GB1477362A (en) 1977-06-22

Family

ID=23440967

Family Applications (2)

Application Number Title Priority Date Filing Date
GB5055376A Expired GB1477362A (en) 1973-06-01 1974-05-31 Field effect transistors
GB2429774A Expired GB1477361A (en) 1973-06-01 1974-05-31 Semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB2429774A Expired GB1477361A (en) 1973-06-01 1974-05-31 Semiconductor devices

Country Status (10)

Country Link
JP (1) JPS5947477B2 (enExample)
BE (1) BE815700A (enExample)
CA (1) CA1025034A (enExample)
CH (2) CH581905A5 (enExample)
DE (1) DE2424908A1 (enExample)
FR (1) FR2232090B1 (enExample)
GB (2) GB1477362A (enExample)
IT (1) IT1013259B (enExample)
NL (1) NL7406513A (enExample)
SE (1) SE7406830L (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704635A (en) * 1984-12-18 1987-11-03 Sol Nudelman Large capacity, large area video imaging sensor
US12264451B2 (en) * 2021-01-27 2025-04-01 Hitachi Construction Machinery Co., Ltd. Hydraulic excavator

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE636317A (enExample) * 1962-08-23 1900-01-01
FR1449089A (fr) * 1964-07-09 1966-08-12 Rca Corp Dispositifs semi-conducteurs
US3523208A (en) * 1968-05-27 1970-08-04 Bell Telephone Labor Inc Image converter
FR2024513A1 (enExample) * 1968-11-29 1970-08-28 Rca Corp
US3670198A (en) * 1969-09-30 1972-06-13 Sprague Electric Co Solid-state vidicon structure

Also Published As

Publication number Publication date
CA1025034A (en) 1978-01-24
BE815700A (fr) 1974-09-16
JPS5947477B2 (ja) 1984-11-19
SE7406830L (enExample) 1974-12-02
FR2232090B1 (enExample) 1979-02-16
IT1013259B (it) 1977-03-30
CH581391A5 (enExample) 1976-10-29
DE2424908C2 (enExample) 1988-10-27
DE2424908A1 (de) 1974-12-19
CH581905A5 (enExample) 1976-11-15
AU6835574A (en) 1975-10-30
GB1477361A (en) 1977-06-22
NL7406513A (enExample) 1974-12-03
FR2232090A1 (enExample) 1974-12-27
JPS5023186A (enExample) 1975-03-12

Similar Documents

Publication Publication Date Title
CA1024266A (en) Deep depletion insulated gate field effect transistors
CA923632A (en) Insulated gate field effect transistor with controlled threshold voltage
GB1354071A (en) Memory elements
CA927522A (en) Low noise field effect transistor with channel having subsurface portion of high conductivity
GB1188799A (en) Insulated Gate Field Effect Devices.
GB1477362A (en) Field effect transistors
JPS5223277A (en) Method of manufacteuring insulating gate type field effect transistor
JPS5267982A (en) Manufacture of schottky barrier type field effect transistor
GB1419542A (en) Protective arrangement for field effect transistors
NL7506288A (nl) Complementair veldeffekttransistorstelsel met geisoleerde poortelektrode.
JPS5275187A (en) Mos type semiconductor device
GB1483555A (en) Electronic components
GB1327298A (en) Insulated gate-field-effect transistor with variable gain
JPS5245280A (en) Field effect transistor of schottky barrier type
IT964201B (it) Circuito integrabile allo stato solido atto a controllare ovvero a regolare la tensione di soglia effettiva di un transistore ad ef fetto di campo ad isolamento di porta
GB1437963A (enExample)
GB1325116A (en) Transistor and method of manufacturing thereof
CA1008186A (en) Method of manufacture of mos transistor with gate connected to source or drain
JPS5323555A (en) Complemen tary mos integrated circuit
JPS51147135A (en) Non-voratile semiconductor memory
AU492209B2 (en) Deep depletion insulated gate field effect transistors
JPS51147133A (en) Non-voratile insulation gate semiconductor memory
JPS5315082A (en) Complementary type insulated gate field effect transistor circuit
JPS5231634A (en) Analog memory
JPS5320777A (en) Insulated gate field effect transistor

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee