JPS5946079A - Magnetoresistance effect element - Google Patents
Magnetoresistance effect elementInfo
- Publication number
- JPS5946079A JPS5946079A JP57156975A JP15697582A JPS5946079A JP S5946079 A JPS5946079 A JP S5946079A JP 57156975 A JP57156975 A JP 57156975A JP 15697582 A JP15697582 A JP 15697582A JP S5946079 A JPS5946079 A JP S5946079A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- circuit
- patterns
- turn
- film circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 7
- 239000000956 alloy Substances 0.000 claims abstract description 7
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 6
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000005294 ferromagnetic effect Effects 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 230000005291 magnetic effect Effects 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010408 film Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 229910017709 Ni Co Inorganic materials 0.000 abstract description 2
- 229910003267 Ni-Co Inorganic materials 0.000 abstract description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910003310 Ni-Al Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- QFLWZFQWSBQYPS-AWRAUJHKSA-N (3S)-3-[[(2S)-2-[[(2S)-2-[5-[(3aS,6aR)-2-oxo-1,3,3a,4,6,6a-hexahydrothieno[3,4-d]imidazol-4-yl]pentanoylamino]-3-methylbutanoyl]amino]-3-(4-hydroxyphenyl)propanoyl]amino]-4-[1-bis(4-chlorophenoxy)phosphorylbutylamino]-4-oxobutanoic acid Chemical compound CCCC(NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](Cc1ccc(O)cc1)NC(=O)[C@@H](NC(=O)CCCCC1SC[C@@H]2NC(=O)N[C@H]12)C(C)C)P(=O)(Oc1ccc(Cl)cc1)Oc1ccc(Cl)cc1 QFLWZFQWSBQYPS-AWRAUJHKSA-N 0.000 description 1
- 235000001270 Allium sibiricum Nutrition 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
この発＋＋＋ｌＩＩ、イ）１（気ＩＪｔ；抗特性がより
安定して設定ネれる。Ｌつ改良しまた磁気抵抗う；内果
素子に関する７、
磁電変１（ハ素−ｒの中で、磁気抵抗効果を利用した磁
気抵抗効果素子は、比較的安定した磁気−電気変換する
ことで知られている。この磁気抵抗効果素子は、磁界を
印加することで電気抵抗が変化する固体素子で構成する
ものであり、その材料とし又はＮ１−Ｃｏ系あるいはＮ
１−Ｆｅ糸の強磁性材料が用いられる。[Detailed Description of the Invention] This development +++ lII, a) 1 (IJt; resistance characteristics can be set more stably. -r, magnetoresistive elements that utilize the magnetoresistive effect are known to perform relatively stable magneto-electrical conversion.This magnetoresistive element changes electrical resistance by applying a magnetic field. It is composed of a solid-state element that changes, and its material may be N1-Co or N
A ferromagnetic material of 1-Fe thread is used.
すなわち、絶縁性基板の主面に対して、」二記強磁性材
料でなる薄膜を蒸着等により形成し、この蒸着薄膜をホ
トレゾストとエツチング技法を利用して、ｌｌｒ定の磁
界に交差する直線部を有する回路・やターンを形成する
ことに７しって構成される。この回路ｉ９ターンｄ１、
印加された磁界の強さに対応して抵抗値の変化する磁気
抵抗効果を有するものであり、その抵抗回路の両端に対
応して形成される電流取り出し用電極を介して、磁界方
向に感知した電気的用カイｉ＜号を＋＋Ｖり出すように
なるものである。That is, on the main surface of an insulating substrate, a thin film made of the ferromagnetic material mentioned above is formed by vapor deposition or the like, and this vapor-deposited thin film is formed using photoresist and etching techniques to form linear sections that intersect with a constant llr magnetic field. It is constructed in accordance with the concept of forming circuits and turns having 7 parts. This circuit i9 turn d1,
It has a magnetoresistive effect in which the resistance value changes in response to the strength of the applied magnetic field, and the current is sensed in the direction of the magnetic field through current extraction electrodes formed corresponding to both ends of the resistance circuit. It is designed so that the electrical chi<< is raised by ++V.
この場合、」二記電流取り出し用の電極は、磁気抵抗体
となる強磁性材料でなる薄膜回路・Ｐターンと同様に、
絶縁性基板の主面上に蒸着によシ形成されるものであり
、電（版と回路パターンとの接続部は、薄膜回路・やタ
ーン蒸着層と、電極蒸着層とが積層形成される状態とな
る。ここで、電極材料としては、例えにじアルミニウム
が使用されるものであり、したがってオーミック性改善
の７に−めに回路・やターンと電本恢との積層部が熱処
理づれた場合、その積層部においてＮ１−Ａ／＝ 系金
属間化合物が生成される。このため、磁気抵抗３回路・
ぞターンとツバ。出ｆ＋３．４仮との接続部分は脆くな
るものであｐ１凍だこの部分の抵抗値が増大して磁気抵
抗効果特性の低下現象を起すようになる１、
この発明ｔよ上記のような点に鑑みなされたもので、オ
ーミック性改善等のだめに熱処理を施した場合でも、猶
に磁気抵抗回路／’Ｐクーンと電イ報材料との間に不要
な合金あるいは金属間化合物が生ずることなく、磁気］
１（抗効里上ＣＪ：もとより機械的強匣においても不帰
な間ｈ′■が発生しないようにする、安定した磁気［１
（抗！１’！Ｊ’性の設定し得る磁気抵抗効果素子を提
供しようとするものである。In this case, the electrode for taking out the current described in "2" is similar to the thin film circuit/P-turn made of a ferromagnetic material that becomes the magnetoresistive element.
It is formed by vapor deposition on the main surface of an insulating substrate, and the connection between the electrical plate and the circuit pattern is formed by laminating a thin film circuit/turn vapor deposited layer and an electrode vapor deposited layer. Here, for example, rainbow aluminum is used as the electrode material, and therefore, in order to improve the ohmic property, if the laminated part of the circuit/turn and the electric conductor is heat treated. , an N1-A/= system intermetallic compound is generated in the laminated part.For this reason, the magnetoresistive three circuits
Turn and spit. The connection part with the output f+3.4 becomes brittle, and the resistance value of the p1 frozen part increases, causing a phenomenon of deterioration of the magnetoresistive effect characteristics1.This invention has the above points. This was done in consideration of the above, and even if heat treatment is applied to improve ohmic properties, unnecessary alloys or intermetallic compounds will not be formed between the magnetoresistive circuit/'P Kuhn and the telegraph material. Magnetism]
1 (Resistance effect Rigami CJ: Stable magnetism [1
(This is an attempt to provide a magnetoresistive element that can have anti-!1'!J' properties.
すなわち、この発明に係る磁気抵抗効果素子は、絶縁性
基板上に形成される強磁性月別でなる薄膜回路・９ター
ンと、この回路・２ターンに対応して形成される”アル
ミニウム基金４でなる導電体回路パターンとの間に、両
回路・ギターンの材料相互で合金あるいは金属間化合物
を生成し離い高融点金属薄膜層を介在形成゛する１うに
したものでるる。That is, the magnetoresistive element according to the present invention consists of a thin film circuit consisting of 9 turns of ferromagnetic metal formed on an insulating substrate, and an aluminum base 4 formed corresponding to the 2 turns of this circuit. There is one in which an alloy or an intermetallic compound is formed between the materials of both the circuits and the guitar, and a high melting point metal thin film layer is interposed between the conductor circuit pattern and the conductive circuit pattern.
以下図面を参照してこの発明の一実施例を酸、明する。An embodiment of the present invention will be explained below with reference to the drawings.
第１図は磁気抵抗効果素子の（ｒｒ＜気抵抗効果を有す
る回路・ぞターンの状態余水すもので、それぞれ直交す
る第１および第２の方向に延びる複数の直線部を折り返
し接続する構造の第１および第２の回路］９ターンＩｌ
ａ、Ｉｌｂが基板１２上に平面的に配置されるように設
定される。そして、この第１および第２の回路ノＰター
ン１１１Ｌ、１１ｂの一端部は、電極１３ａで共通に接
続され、寸だ回路パターンｌｌａ、ｌｌｂのそれぞれ他
端部には電４＆ Ｊ ３ ｂ 、 １３ｃが接続形成さ
れるようになっている２、
第２図は第１図のＡ −Ａ ＋Ｉｉ！およびｎ−ｎ紳に
対応する断面構法を示゛１ものび、シリコンウ′「−バ
ーでなる基板１２の一方の−１：而には、ｒＲ化シリコ
ン（Ｓ １０２）による絶縁層１４を全面にわたり形成
Ｊ−る。そして、この絶縁層Ｉ４」にｒ）Ｉ・ミニラム
蒸着によって導電体回路・Ｐターン１ 、ｌｉ ６形成
する。この回路ノ４ターン７５ ｉｔ：第１図（１−示
した電ｗ１．１３ａ〜１３Ｃに対Ｉ、）１、し７、さＣ
）に第１および第２の回路・ぞターンＩｌａ、ｌｌｂの
、それぞれ斜線で示す折り返し＋’ｉｌ（にｉｔ ＩＦ
、、［７てμシ′Ｉト′される。そして、この導電体回
１１１′マ・Ｐターン７５上に、高融点の例えシ１：チ
タン（Ｔｉ）による金属薄膜Ｍ１６を形成４°る。そし
て、この金属薄膜層Ｉ６を含む絶縁層１４上に、イ１，
１図に第１１−・よび第２の回路・！ターンＩＩ＾、Ｉ
ｌｂとして示しだように、Ｎ１−Ｃｏｆ￥金による強磁
性体でなる簿ｌ１ｇ回路・ぞターン１７ケ蒸着形１１ν
する。−ア： ｌ、、 ｆ 。Figure 1 shows the state of a magnetoresistive element (rr<circuit with a resistance effect), which has a structure in which a plurality of linear parts extending in the first and second directions, which are orthogonal to each other, are folded back and connected. ] 9 turns Il
a, Ilb are set to be arranged on the substrate 12 in a plane. One ends of the first and second circuit P turns 111L, 11b are commonly connected by an electrode 13a, and the other ends of the circuit patterns lla, llb are connected with electric currents 4&J3b, 13c. 2, FIG. 2 shows A −A +Ii! of FIG. 1. The cross-sectional construction method corresponding to the and n-n dimensions is shown. Then, on this insulating layer I4, a conductor circuit, P-turns 1 and 6, are formed by I/minilam evaporation. 4 turns of this circuit 75 it: Fig. 1 (1-I for the shown voltages w1.13a to 13C,) 1, 7, and C
), the first and second circuit turns Ila and llb are respectively indicated by diagonal lines +'il (it IF
. Then, a metal thin film M16 made of titanium (Ti) having a high melting point is formed on this conductor turn 111' M/P turn 75. Then, on the insulating layer 14 including the metal thin film layer I6, I1,
Figure 1 shows the 11th- and second circuits! Turn II^, I
As shown in lb, the circuit made of ferromagnetic material made of N1-Cof\gold has 17 turns and is evaporated type 11ν.
do. -A: l,, f.
回路ノＰり・−ン１７」−を、酸化シリコン（Ｓｉｒ）
２）による保護層１８で被覆して、磁気抵抗効果素子を
完成する。The circuit board 17 is made of silicon oxide (Sir).
2) is coated with the protective layer 18 to complete the magnetoresistive element.
この場合、第２図の（Ｒ）に取り出して示すように、導
出電極１ 、？ ａ〜１３ｂに対応する部分においては
、アルミニウムによる回路ノ９ターン１５を他の回路・
母ターン部から突出Ｈψ定するノー共に、保獲層１８に
回路パターン１５を露出１イ）開口１９を形成して、電
極導出部とする。In this case, as shown in FIG. 2 (R), the lead-out electrodes 1, ? In the parts corresponding to a to 13b, the aluminum circuit 9 turns 15 are connected to other circuits.
1) Expose the circuit pattern 15 on the retention layer 18 at both sides of the hole protruding from the main turn part and form an opening 19 to serve as an electrode lead-out part.
すなわち、Ｅ Ｆｅのように構成される磁気抵抗効果素
子におい−Ｇ、？７１．電休回路・Ｐターン１．５１ｒ
よ強磁性薄膜回路１７の導出電極として作用−するもの
であり、また強磁性体薄膜回路・Ｐり・−ン１７の直線
部分を接続する折り返し７部な短Ａ’ｉｉ シで、直線
部Ｑて交差する磁界の検１］冒時性が効果的に設定され
るようにし、−１いる。That is, in a magnetoresistive element configured like E Fe -G,? 71. Electric suspension circuit/P turn 1.51r
It acts as a lead-out electrode of the ferromagnetic thin film circuit 17, and is a short 7-part folded part A'ii which connects the straight parts of the ferromagnetic thin film circuit 17, and the straight part Q. Detection of magnetic fields that intersect with each other so that the time delay is effectively set to -1.
そして、金属薄膜層１６Ｃ」１、Ｎｉ−Ｃｏ合金でなる
強磁性薄膜回路・やターフ１７と、アルミニウムでなる
導電体回路／Ｐターン１５との間に、Ｎ１−Ａｔ金属間
化合物生成防止用の薄膜回路・ぐターンとして作用する
ものである。Then, between the metal thin film layer 16C''1, the ferromagnetic thin film circuit/turf 17 made of Ni-Co alloy, and the conductive circuit/P turn 15 made of aluminum, a layer for preventing the formation of N1-At intermetallic compounds is provided. It acts as a thin film circuit.
上記実施例では、基板１２の絶縁Ｈ４１４１・に導電体
・やターン１５を寸ず形成するように（／ンが、第３図
に示すように絶れ層１４七に寸ず強磁性薄膜回Ｈ，ｖ、
、ｅ 、ｐ ７１７１）ｔ’、；Ｉ＋’ｊ Ｌ−１
と（１） 回路・？ターン１７の′［１イ、掩形成部、
式ら（ｒ−折り１反（７１σ絡部に対応してｐＨｈｆｆ
−の金属ｔ’ｑ膜層１６を形成（２て、この金属′Ｒ膜
層１６＋にｉＩ、伜を含むフｆｆ γ打５体回路ノやタ
ーン１５を形成する、１．う（・〆二し７てもよｌ、／
１ 、、この場合、これら回路・Ｐり・−ンＷけ、ホト
１７．ノストとエツヂング技ン井を・１史Ｉｆｆ ｊ、
て形成ずｔｌ（１よいもので、その他このような化学エ
ツチング（ｉ化工て、デラズマドライエツチノグト〃て
等適ｎ使用できるものである。In the above embodiment, the conductive material and the turns 15 are formed on the insulating layer 141 of the substrate 12 (as shown in FIG. 3). ,v,
, e , p 7171) t', ;I+'j L-1
and (1) circuit? Turn 17'[1a, cover formation part,
Equation (1 r-fold (corresponding to the 71σ junction)
- forming the metal t'q film layer 16 (2) forming the fff γ-stroke five-body circuit and turns 15 including iI, 传 on this metal 'R film layer 16+; Shi7 moyo l, /
1. In this case, these circuits, circuits, and photo 17. Nost and etching technique well・1st history Iff j,
However, other such chemical etching methods such as derasma dry etching, etc. can also be used.
尚、この第３図では保８隻層ｔ１、省略しで示している
もので、２Ｐ、２図で示ｌ−たと回（〕′；にｒ（ｌｏ
ｇ等による保時層で波榎することＱｌも１．ろんで才・
ろ。In addition, in this Figure 3, the 8th protection vessel layer t1 is omitted, and r(lo
Ql is also 1. Londe talented
reactor.
ここで、Ｎ１−八を金属間化含物牛成防１１一層として
作用する全屈薄膜層１５とし−て１１１−１′−ζ／ｌ
ｉｉ ｇｌｌで示したＴ１の仙に、タンタノｉ（’「ｒ
ｔｌ、モリグフ゛ン（１１：＋ ）タングステン（４）
等のニラ々Ｉ１． （ＬＪｉ ）とアルミ７ウノ、（Ａ
Ｚ）との合金あるいは金１・＋（間化合！吻を生１ｉ！
、 ｌ−。Here, N1-8 is assumed to be 111-1'-ζ/l as the total bending thin film layer 15 acting as one layer of the intermetallic inclusion layer 11.
ii Tantano i ('"r
tl, molywood (11:+) tungsten (4)
Chives such as I1. (LJi) and Aluminum 7 Uno, (A
Alloy with Z) or gold 1.+ (interfusion! Raw 1i!
, l-.
難い高融点金属が適宜選定される０、
すなわち、Ｎｌ系の強磁性ドＩ膜回路・Ｐターン１７と
Ａｔ系の導電体回路・マター７１５との間に、′「ｌ、
Ｔａ、 Ｍｏ、 Ｗ等の高融点金属薄膜層を介在させる
ことによって、オーミック性改善の熱処理に際してＮｉ
−Ａｔ系金属間化合物１１！成を７１θ゛実に防１Ｆで
きるものであり、回路・Ｐターン１７と１５との接合部
における強度、磁気抵抗効果４．．１１性が効果的に改
善できる。第１表ｔまＮｉ−Ｃｏ合金とＡｔとを直接積
層した場合と、Ｎ１−Ｃｏ、 Ｔ”ｌ、ＡｔのＥ層構造
とした場合を対比して示−す。In other words, between the Nl-based ferromagnetic de-I film circuit/P turn 17 and the At-based conductive circuit/matter 715, a metal with a high melting point is appropriately selected.
By interposing a high melting point metal thin film layer such as Ta, Mo, W, etc., Ni
-At-based intermetallic compound 11! It can actually prevent the formation of 71θ by 1F, and the strength and magnetoresistive effect at the junction between the circuit and P-turns 17 and 15 can be reduced. ．． 11 can be effectively improved. Table 1 shows a comparison between a case where a Ni--Co alloy and At are directly laminated and a case where an E-layer structure of N1-Co, T"l, and At is formed.
以」二のようにこの発明によれば、Ｉ［￥に強磁性薄膜
回路・やターンと、電極を含むＡｔ導電体薄膜回路・ｋ
ターンとの接合部において、その強度を約５倍にも高め
ることができ、まだ磁気抵抗効果を３０チ程度も向上さ
せ／、？−とのできるイ、のであり、非常に安５１！シ
たｌｈ’ ＰＩのイ１゛６【気、 ［１１，抗グ１１甲
、卓子を構成うることの′ＣきるもＴ７１−０で１７）
２．According to the present invention, as described in ``2'', a ferromagnetic thin film circuit and a turn and an At conductive thin film circuit including an electrode are connected to I[\].
At the junction with the turn, the strength can be increased by about 5 times, and the magnetoresistive effect can still be improved by about 30 inches. - It's possible to do it, and it's very cheap 51! Shita lh'PI's I1゛6 [Ki, [11, antig 11A, the 'C that can form the table is also 17 in T71-0)
2.
第１図はこの発明の＝ＴノＩＩｉ Ｉ’ｌｌ ｉτ−（
、Ｙる（１（２気坤４′１″１効果素子を示４゛１′向
図、第２１・７つ−２）（＾） ｍ）Ｉｒ１、ぞ江そ′
れｔＰ、１図のＡ−Ａ糾およびＢ−Ｂ純にｒｉ’、１つ
断面図、第３図ｔ」、この発ｊｊ１１の他の′Ｊ′ｂｊ
噸１イク１１５−示す１１１１而図である。Figure 1 shows =TnoIIi I'll iτ-(
, Yru (1 (2 Kikon 4'1''1 effect element shown 4'1' direction view, 21st/7th-2) (^) m) Ir1, Zoeso'
tP, A-A in Figure 1 and B-B pure ri', one cross section, Figure 3 t', other 'J'bj of this origin jj11
噸 1 Iku 115 - 1111 diagram showing.
Claims (1)
磁性材料でなる薄膜回路パターンと、この回路・Ｐター
ンの一部に対応して形成され導出電極としても使用しイ
（ｊるように形成したアルミニウム系導電体薄膜回路パ
ターンと、この導電体簿膜回路・？ターンと」ユ記強磁
性薄膜回路・！ターンとの間にＡ−（層する状態で介在
して形成された上記磁性側石および導１１５月料と０合
金あるいＯよ金属間化合物が形成し幡い高融点金石薄膜
とを具（Ｉｉ＋＋ Ｌ ／ｒことを特徴とする磁気抵抗
効！′ｆ：素子。A thin film circuit pattern made of a ferromagnetic material having a magnetoresistive effect is formed on the main surface of an insulating substrate, and a thin film circuit pattern is formed corresponding to a part of this circuit/P-turn and can also be used as a lead-out electrode. The aluminum-based conductor thin film circuit pattern formed on the ferromagnetic thin film circuit ?turn and the ferromagnetic thin film circuit !turn formed on the ferromagnetic thin film circuit ! A magnetoresistive element characterized by a magnetic side stone, a conductive material, and a thin film of high melting point gold formed by an alloy or an intermetallic compound (Ii++ L/r).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57156975A JPS5946079A (en) | 1982-09-09 | 1982-09-09 | Magnetoresistance effect element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57156975A JPS5946079A (en) | 1982-09-09 | 1982-09-09 | Magnetoresistance effect element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5946079A true JPS5946079A (en) | 1984-03-15 |
Family
ID=15639417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57156975A Pending JPS5946079A (en) | 1982-09-09 | 1982-09-09 | Magnetoresistance effect element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5946079A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6377370U (en) * | 1986-11-07 | 1988-05-23 | ||
| JPH01125882A (en) * | 1987-08-21 | 1989-05-18 | Nippon Denso Co Ltd | Magnetism detector |
| US5262666A (en) * | 1989-05-15 | 1993-11-16 | Nippondenso Co., Ltd. | Semiconductor device with a nickel alloy protective resistor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57126187A (en) * | 1981-01-28 | 1982-08-05 | Hitachi Ltd | Reluctance element |
-
1982
- 1982-09-09 JP JP57156975A patent/JPS5946079A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57126187A (en) * | 1981-01-28 | 1982-08-05 | Hitachi Ltd | Reluctance element |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6377370U (en) * | 1986-11-07 | 1988-05-23 | ||
| JPH0445263Y2 (en) * | 1986-11-07 | 1992-10-23 | ||
| JPH01125882A (en) * | 1987-08-21 | 1989-05-18 | Nippon Denso Co Ltd | Magnetism detector |
| US5262666A (en) * | 1989-05-15 | 1993-11-16 | Nippondenso Co., Ltd. | Semiconductor device with a nickel alloy protective resistor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5569544A (en) | Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components | |
| US5617071A (en) | Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses | |
| US6252390B1 (en) | Magnetically coupled signal isolator | |
| US3969197A (en) | Method for fabricating a thin film capacitor | |
| EP0611477A1 (en) | Offset magnetoresistive memory structures | |
| JPH0582991B2 (en) | ||
| JPH0424796B2 (en) | ||
| WO2012036017A1 (en) | Dielectric thin film element, anti-fuse element, and method for producing dielectric thin film element | |
| JPS5946079A (en) | Magnetoresistance effect element | |
| US5646051A (en) | Process for forming a magnetoresistive sensor for a reading head | |
| JPH04252411A (en) | Thin-film magnetic head | |
| JP2626329B2 (en) | Electronic components | |
| JPS6159553B2 (en) | ||
| JPH0265111A (en) | Thin-film capacitor and manufacture thereof | |
| JP2647391B2 (en) | Semiconductor device | |
| JP2806549B2 (en) | Magnetoresistance effect element | |
| JPS5816546A (en) | Semiconductor device | |
| JPS6370584A (en) | Magnetoresistance effect type element of shunt type | |
| JPH0425715B2 (en) | ||
| JPS6145874B2 (en) | ||
| JPS6353713B2 (en) | ||
| JPS5946078A (en) | Magnetoresistance effect element | |
| JP6040032B2 (en) | Electronic components | |
| JP2002359411A (en) | Semiconductor device and manufacturing method therefor | |
| JPH01313976A (en) | Oxide superconductor bridge element |