JPS5946042A - Observing method for pin hole, crack and coverage of semiconductor device - Google Patents

Abstract

PURPOSE:To decide acceptable or defective coverages with high accuracy by immersing a semiconductor device in a pigment solution at high atmospheric pressure and observing the pigment by a fluorescence microscope after washing the device. CONSTITUTION:The pigment solution 7 in which Rhodamine 6G is used as the pigment and benzyl alcohol is used as a solvent is prepared. The device 6 in contg. the crack 5 and the pin hole 4 is immersed in the solution 7 at high atmospheric pressure. When the solution permeates and a sample is washed by pure water and observed by the fluorescence microscope, the pigment in the pin hole 4 and the crack 5 fluoresces, and acceptable or defective coverages can be decided at low cost with high accuracy.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention describes
Pinhole, crack, force 1<-ledge %J to evaluate the crack, pinhole, coverage of 1? ,
This is related to the % method.

Conventional・This God's l+J1. JJ, who was conducting an inspection, was evaluating semiconductor devices for cracks and cracks by using phosphoric acid.

Here, the phosphoric acid etching method involves soaking a semi-JF-free chair in phosphoric acid and etching the cracks and pin poles at the top of the sAt wiring, which can then be observed with a gold-14 microscope. 2. It was something.

However, this person/JE I#, At wiring J: +
;(<'s bottle hole l, crank l; t 114 can be observed, but the dog cannot make a thorough inspection in the part where the coverage is poor.) It's hot.

This invention was made in order to eliminate the disadvantages of the conventional devices as described above. After immersing a semiconductor device in a dye solution under high pressure and cleaning it, pinholes, cracks, and coverage are removed. By observing and observing the crushed pigment in the bad part of
t Pinholes, cracks, and coverage of semiconductor device chairs that allow you to observe pinholes and cracks in areas other than wiring, as well as areas with poor coverage.
1 (, the purpose is to provide a method of observation θmo).

An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure shows four pinholes to be observed using the method of the present invention.
In the first review, (1) is a half-8 board, +21 Lf A is wired, and (3) is a surface protection 11 board made of 5iU2 (auto board). Coat 11), +61 is a semiconductor +r'i de/iis consisting of 31 in (1) above. and(
4) is the pinhole made by this half-I^1 pinhole (6) l, and (5) is the same crank, v).

And the pin of the semiconductor device (6); l= −/
4), to observe the crack (5), @2 figure number is shown. Soak the sample 1 (6) under pressure F, then sample 1 +61 E 7i1
= When purified, it will look like the picture 3, pin 1 toe? Work 4
) Dye (9) sprays 4+￥ on O and crack (5) 0
Here, t as an example of a dye solution, jId as a dye)
The highly efficient Rhodashin 6 was used as a Venge I.
It can be done in 7Js by using L alcohol, pure water, etc.

Also, the small part of crack (5) is 0) +4 festival -〇kirupuko W) + this is the molecular structure 0) small 1 element) l<4- is the force S wise 1 the 4 O like this In the Nimokusai example, 6 Takefu・1(
6) to the dye solution (7) +t knee f 4- and ・t'
1.41 The dye solution soaks into the crank (5) and pinhole (4), so after the dye solution soaks in, test nail f (3). Wash with pure water to remove cracks (5) and pinholes (41Di 'y
After washing off the dye attached to l-, and then looking at sample 16) with a fluorescent microscope, the result was pinho/l/+41. The dye remaining in the crack (5) emits bright light, allowing the pinpole (4)/crack +51) #μ to be detected.

In addition, the 4th Ward Kuchimagi Kidney Akinoj method 1 + i Minayo noni J-ru mechanical coverage amount of t$ l' (4-ru half ! 1 (indicates the body device, 14 yam 2 and , fil
+ is silicon H':, &Jz the silicon substrate full
+11 silicon oxide bullets (S4021
1i), (1:n is 10,000 wires partially etched into the 5i02 film Q21 by At, etc., (14) is
2gL! S +02 II outside (121 and greedy wiring (
1151 is a semi-4i body device consisting of the above songs ~(14).And (1,fl)( 16b) is the coverage or thick fk in the part with a one-year difference on the side of the metal I line tll.
This is a turning portion generated in the result #t<--3-t film 114).

- Large Figure 5 shows a semiconductor device with the same configuration as Figure 4, and shows an example of good coverage. The coverage was good even in some places, and there were no recesses (16a) (16b) as shown in the fourth factor (1).
Half+, l', I as shown in ゜''2, Figure 4, 51st Tue 1
: body device (for 161, coverage +a or no 5r-I peek, observation 4-ru meeting, ``double crack, pinhole l observation 1 gamma>'', -! 11
0 body device (IIil G-, 1!V+Me (1 under pressure)
△Immerse it in water and then add material (16) to it.
] is a recess of 0.6 in the device (16) shown in Figure 4.
1) Pigment accumulates in (liil)), so it is exposed to a bright light 'li r+' and a mirror. 11. By observing lJ, it is possible to judge whether the coverage is good or bad.

Note that the above actual history (in the example, semiconductor device νFj +++l
J. Although the case where cherry blossoms were carried out has been described, the present invention can also be used for surface observation of other heavy-duty components, hybrid ICs, capacitors, low resistance, etc.

As described above, this invention has improved by 1% +! 4. After immersing the half-integrated device in a dye solution under vaporization and cleaning the semiconductor device, pinholes in the semiconductor device,
By observing the pigment in the cracks and coverage areas using a fluorescence microscope, it is possible to conduct the observation at low cost because only the pigment and fluorescence microscope are used. There are good things and effects that can be obtained.

[Brief explanation of drawings]

Figure 1 is a cross-sectional view of a semiconductor device that exhibits pinholes and cracks, which is a test sample according to the present invention, and Figure 2 is a diagram showing the sample 1 immersed in a dye solution under commercial pressure.
@Figure 3 indicates the sample with #! ! A cross-sectional view showing the state after being immersed in J Soluble Rll and then washed with pure water. Fig. 4 is a new view of a semiconductor device with poor coverage, which is an observation sample according to the present invention. Fig. 5 FIG. 3 is a cross-sectional view of a small half-46 body device. (6)...Semiconductor device, (3)...Overcoat +-+HB, (4)...Pinhole, (5)...
Crack, (7)...1 dye frf liquid, (9)...
Pigment, 63)...Half 747. Closed device, 1141・
...overco-) 11! , (16a) (16b)・
...Concavities caused by poor coverage. Figure 1 ρ Figure 2 Figure 3 Figure 4 Figure 5 Figure 4 S; O2

Claims (1)

[Claims] (1) After immersing the semi-integrated device in a dye solution at 6 atmospheres and cleaning the semiconductor device, remove the dye that has accumulated in the holes, cracks, or areas with poor coverage of the semiconductor device. It is characterized by observation using a forward microscope! Pinholes, cracks, and coverage of I calculation 14 body design/cutting machine MM <6 Method.