JPS5946024A - Vacuum deposition method - Google Patents
Vacuum deposition methodInfo
- Publication number
- JPS5946024A JPS5946024A JP15612882A JP15612882A JPS5946024A JP S5946024 A JPS5946024 A JP S5946024A JP 15612882 A JP15612882 A JP 15612882A JP 15612882 A JP15612882 A JP 15612882A JP S5946024 A JPS5946024 A JP S5946024A
- Authority
- JP
- Japan
- Prior art keywords
- film thickness
- correction value
- film
- meter
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001771 vacuum deposition Methods 0.000 title claims abstract 4
- 238000000034 method Methods 0.000 title description 11
- 238000012937 correction Methods 0.000 claims abstract description 20
- 238000001704 evaporation Methods 0.000 claims abstract description 7
- 230000008020 evaporation Effects 0.000 claims abstract description 7
- 235000012431 wafers Nutrition 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 2
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 101100018566 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) tif-1 gene Proteins 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、前サイクルのデータをもとにして次のサイク
ルに自動的に補正を加えることによりサイクル毎の１換
厚値のバラツキを最小限に抑えるようにした真空蒸着方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a vacuum cleaner that minimizes variations in 1-conversion thickness values from cycle to cycle by automatically adding corrections to the next cycle based on data from the previous cycle. The present invention relates to a vapor deposition method.
ウェーハ製造」：程で電極形成に金属（主にＡ７）を蒸
着した後、エツチング工程では、電極以外に付着したＡ
ｔをエツチングする。このエツチング」二程では、１０
ツト毎に同一の処理条件で作業を行なうため、ロット内
のＡ−を膜厚にバラツキがあると、ロフト内の半導体ウ
ェーハのＡｔのエツチング残す、オーバエッチ等が発生
し、そのロフトの半導体ウェーハは、再度処理を行なわ
なりればならない。従って、エツチング工程では、］二
期短縮及び特性面からいっても、精度の良いエツチング
（いわゆるジャストエッチ）が望ましい。一方、ＡＡ蒸
着作業は連続処理型はなく何枚かを一１丈に処理するバ
ッチ型がほとんどであり、ウェーハが大口径になるにつ
れ、一度に処理するウェーか量は減少し、１０ンドで数
回のバッチ作業が必要になる。"Wafer manufacturing": After metal (mainly A7) is vapor-deposited to form electrodes, in the etching process, A7 deposited on areas other than the electrodes is removed.
Etch t. "This etching" is 10
Since the process is carried out under the same processing conditions for each lot, if there are variations in the film thickness of A- within a lot, etching of the semiconductor wafers in the loft may be left unetched or overetching may occur. must be processed again. Therefore, in the etching process, highly accurate etching (so-called just etching) is desirable from the viewpoint of shortening the second period and characteristics. On the other hand, most AA vapor deposition operations are not continuous processing types, but are batch-type processes in which several wafers are processed in 11-inch pieces. Requires several batch operations.
ＡＡ膜厚のコントロール方法としては、」二記バッチ型
蒸着装置に水晶式膜厚計を用いるのがほとんどであり、
水晶発振子にＡｔが付着した時の発振周波数の変化と付
着Ａ７量とが直線の関係にあることを利用しているが、
その関係はＡｔの付着量に従がい、微妙に狂うため、各
サイクル毎ｔａｔ ′Ｉｆ）ロット内、ロフト間でＡ４
膜厚値がばらつくので、毎回同じ設定値（特に補正値）
ではなく、数〜数十サイクル毎に補正値を変えなければ
ならない。Most methods for controlling the AA film thickness include using a crystal film thickness meter in a batch-type evaporation apparatus.
This method utilizes the fact that there is a linear relationship between the change in oscillation frequency when At adheres to a crystal oscillator and the amount of attached A7.
Since the relationship depends on the amount of At attached and is slightly distorted, the A4
Since the film thickness value varies, the setting value (especially the correction value) must be the same every time.
Rather, the correction value must be changed every few to several tens of cycles.
その補正値（Ｘ）の算出方法は Ｘｎ＝ｔ１１−□／１ｏ−Ｘ。The method of calculating the correction value (X) is Xn=t11-□/1o-X.
である。It is.
たたし、Ｘｎ、今回の補正値
ｔＩＦ−１’前回の膜厚値
ｔｏ ：ｖ定膜厚値
Ｘｏ ：初期補正値
従来の作業のやり方は、作業を開始する前にノクイロッ
ト（本作業ではなく、ダミーウェーハてやること）を行
ない、そのＡＡ膜厚値（１）を測定してから手計算にて
補正値（］を出し、その［１の作業を行なっていた。こ
の方法では１０ツトを数回に分けて蒸着作業を行なう場
合に、どうしてもサイクル間で膜厚のバラツキ（たとえ
、規格値に入ったとしても）が生じ、１０ツト処理のエ
ツチング作業でジャストエッチが望めず、再処理を行ち
゛うか、蒸着サイクル毎に処理条件を変える等厄介であ
った。又、蒸着装置はほとんとか自動化されているが、
補正値設定は手作業で行なわれるため、人為的な誤差が
生してしまう恐れがあった。where, Xn, current correction value tIF-1' previous film thickness value to :v constant film thickness value , using a dummy wafer), measured the AA film thickness value (1), calculated the correction value ( ) by hand, and performed the work in [1]. This method requires 10 points. When performing vapor deposition work in several steps, variations in film thickness inevitably occur between cycles (even if it is within the standard value), and it is not possible to achieve just etching with the 10-step etching process, so reprocessing is necessary. However, it was difficult to change the processing conditions for each deposition cycle.In addition, although most of the deposition equipment is automated,
Since the correction value setting is done manually, there is a risk of human error.
本発明は前記問題点を解消するもので、市川−イクルの
データをもとにして次のサイクルに自動的に補正を加え
ることによりサイクルｊＩＪ、の膜厚値のバフツキを最
小限に抑えるようにすることを１）徴とするものである
。以上、本発明の一実施例を図によって説明する。The present invention solves the above problem and minimizes the buffing of the film thickness value of cycle jIJ by automatically adding correction to the next cycle based on the Ichikawa-Ikuru data. 1) It is a sign that An embodiment of the present invention will be described above with reference to the drawings.
第１図に示すように、半導体ウェーハに金属を蒸着する
真空蒸着装置本体に内蔵され、蒸着膜厚をコノトロール
する水晶式膜厚用２と、蒸着後の膜厚を実測する膜厚測
定器５とをＩｔｓ−２３２Ｃ等のインターフニスでコン
トローラ１に接続する。フン）ｏ−ラ１には作業条件と
して予じめ決めた設定膜厚値［０を記憶さぜる。As shown in Fig. 1, a crystal film thickness measuring device 2, which is built into the main body of a vacuum evaporation apparatus that evaporates metal onto a semiconductor wafer, controls the evaporated film thickness, and a film thickness measuring device 5, which actually measures the film thickness after evaporation. and are connected to the controller 1 through an interface such as Its-232C. (Hmph) In the o-ra 1, a predetermined film thickness value [0] is stored as a working condition.
第２図に示すように、コントローラ１て、１１１ｊ々回
の蒸着作業で与えられた膜厚用２に人力さぜた前回の補
正値Ｘ。−１および膜厚測定器６て実測した前回の膜厚
値ｔ１１−１を収集、記憶しこれらの情報をもとにして
合同の補正値Ｘｎを
Ｘ ｐ −ｎ −１／ ｔ、 、 Ｘ ｎ−１の式に基
き算出さぜる。その補正値を膜ｊｌ計２に人力させ膜厚
用２てコントロールするサイクル毎の膜厚値を補正さゼ
る。As shown in FIG. 2, the controller 1 calculates the previous correction value X manually applied to the film thickness value 2 given in 111j vapor deposition operations. -1 and the previous film thickness value t11-1 actually measured by the film thickness measuring device 6, and store them, and based on these information, calculate the joint correction value Xn as X p -n -1/ t, , X n Calculate based on the formula -1. The correction value is manually applied to the film thickness meter 2 to correct the film thickness value for each cycle to be controlled by the film thickness meter 2.
以上のように本発明によれば、前サイクルのデータをも
とに、次のサイクルに自動的に補正を加えるため、サイ
クル毎の膜厚値のバラツキを最小限に押えることがｉ」
能になり、エツチング作業でのジャストエッチを行なう
ことかできる。又、コントローラで機械的に補正値を割
り出し蒸着作業を行なうため人為的な誤差を防止できる
と共に、パイロット作業等の不必要な作業が省は生産性
を向上できる効果を有するものである。As described above, according to the present invention, since correction is automatically applied to the next cycle based on the data of the previous cycle, it is possible to minimize variations in film thickness values from cycle to cycle.
This makes it possible to perform just-etching in etching operations. Further, since the controller mechanically determines the correction value and performs the deposition operation, human errors can be prevented, and unnecessary operations such as pilot operations can be saved, thereby improving productivity.
第１図は本発明の一実施例におけるシステム図、第２図
はデータのフロー図である。FIG. 1 is a system diagram in one embodiment of the present invention, and FIG. 2 is a data flow diagram.
Claims (1)
体に内蔵され、蒸着膜厚をコントロールする膜厚用と、
蒸着後の膜厚を実測する膜厚測定器とを備え、コントロ
ーラで膜厚計に入力させた前回の蒸着膜厚補正値データ
および膜厚測定器が実測した前回の膜厚値データを収集
、記憶し、これらのデータと規格値データとを比較計算
させて次の蒸着１侯ｊｖ補正値を算出し、その補正値を
膜厚用に人力させることを特徴とする真空蒸着方法。(1) A film thickness control device that is built into the main body of the vacuum evaporation equipment that evaporates metal onto semiconductor wafers and controls the evaporation film thickness;
Equipped with a film thickness measuring device that actually measures the film thickness after vapor deposition, it collects the previous vaporized film thickness correction value data entered into the film thickness meter by the controller and the previous film thickness value data actually measured by the film thickness measuring device. A vacuum evaporation method characterized by storing the data, comparing and calculating these data with standard value data to calculate a correction value for the next evaporation, and manually inputting the correction value for film thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15612882A JPS5946024A (en) | 1982-09-08 | 1982-09-08 | Vacuum deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15612882A JPS5946024A (en) | 1982-09-08 | 1982-09-08 | Vacuum deposition method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5946024A true JPS5946024A (en) | 1984-03-15 |
Family
ID=15620931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15612882A Pending JPS5946024A (en) | 1982-09-08 | 1982-09-08 | Vacuum deposition method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5946024A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115996030A (en) * | 2023-03-22 | 2023-04-21 | 日照皓诚电子科技有限公司 | Quartz crystal coating thickness control method and system, equipment and storage medium |
-
1982
- 1982-09-08 JP JP15612882A patent/JPS5946024A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115996030A (en) * | 2023-03-22 | 2023-04-21 | 日照皓诚电子科技有限公司 | Quartz crystal coating thickness control method and system, equipment and storage medium |
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